---
_id: '44851'
abstract:
- lang: eng
  text: <jats:p>We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system
    lattice matched to InP, as future sources for single and entangled photons for
    long-haul fiber-based quantum communication in the optical C-band. We achieved
    these quantum dots by local droplet etching via InAl droplets in an In0.52Al0.48As
    layer and subsequent filling of the holes with In0.53Ga0.47As. Here, we present
    detailed investigations of the hole morphologies measured by atomic force microscopy.
    Statistical analysis of a set of nanoholes reveals a high degree of symmetry for
    nearly half of them when etched at optimized temperatures. Overgrowth with 50–150 nm
    In0.52Al0.48As increases their diameter and elongates the holes along the [01̄1]-direction.
    By systematically scanning the parameter space, we were able to fill the holes
    with In0.53Ga0.47As, and by capping the filled holes and performing photoluminescence
    measurements, we observe photoluminescence emission in the O-band up into the
    C-band depending on the filling height of the nanoholes.</jats:p>
author:
- first_name: D.
  full_name: Deutsch, D.
  last_name: Deutsch
- first_name: C.
  full_name: Buchholz, C.
  last_name: Buchholz
- first_name: V.
  full_name: Zolatanosha, V.
  last_name: Zolatanosha
- first_name: K. D.
  full_name: Jöns, K. D.
  last_name: Jöns
- first_name: D.
  full_name: Reuter, D.
  last_name: Reuter
citation:
  ama: Deutsch D, Buchholz C, Zolatanosha V, Jöns KD, Reuter D. Telecom C-band photon
    emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As
    layers. <i>AIP Advances</i>. 2023;13(5). doi:<a href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>
  apa: Deutsch, D., Buchholz, C., Zolatanosha, V., Jöns, K. D., &#38; Reuter, D. (2023).
    Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling
    nanoholes in In0.52Al0.48As layers. <i>AIP Advances</i>, <i>13</i>(5). <a href="https://doi.org/10.1063/5.0147281">https://doi.org/10.1063/5.0147281</a>
  bibtex: '@article{Deutsch_Buchholz_Zolatanosha_Jöns_Reuter_2023, title={Telecom
    C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes
    in In0.52Al0.48As layers}, volume={13}, DOI={<a href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>},
    number={5}, journal={AIP Advances}, publisher={AIP Publishing}, author={Deutsch,
    D. and Buchholz, C. and Zolatanosha, V. and Jöns, K. D. and Reuter, D.}, year={2023}
    }'
  chicago: Deutsch, D., C. Buchholz, V. Zolatanosha, K. D. Jöns, and D. Reuter. “Telecom
    C-Band Photon Emission from (In,Ga)As Quantum Dots Generated by Filling Nanoholes
    in In0.52Al0.48As Layers.” <i>AIP Advances</i> 13, no. 5 (2023). <a href="https://doi.org/10.1063/5.0147281">https://doi.org/10.1063/5.0147281</a>.
  ieee: 'D. Deutsch, C. Buchholz, V. Zolatanosha, K. D. Jöns, and D. Reuter, “Telecom
    C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes
    in In0.52Al0.48As layers,” <i>AIP Advances</i>, vol. 13, no. 5, 2023, doi: <a
    href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>.'
  mla: Deutsch, D., et al. “Telecom C-Band Photon Emission from (In,Ga)As Quantum
    Dots Generated by Filling Nanoholes in In0.52Al0.48As Layers.” <i>AIP Advances</i>,
    vol. 13, no. 5, AIP Publishing, 2023, doi:<a href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>.
  short: D. Deutsch, C. Buchholz, V. Zolatanosha, K.D. Jöns, D. Reuter, AIP Advances
    13 (2023).
date_created: 2023-05-15T08:55:49Z
date_updated: 2023-08-14T10:05:15Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0147281
intvolume: '        13'
issue: '5'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: AIP Advances
publication_identifier:
  issn:
  - 2158-3226
publication_status: published
publisher: AIP Publishing
status: public
title: Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling
  nanoholes in In0.52Al0.48As layers
type: journal_article
user_id: '37763'
volume: 13
year: '2023'
...
---
_id: '57677'
abstract:
- lang: eng
  text: <jats:p>We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system
    lattice matched to InP, as future sources for single and entangled photons for
    long-haul fiber-based quantum communication in the optical C-band. We achieved
    these quantum dots by local droplet etching via InAl droplets in an In0.52Al0.48As
    layer and subsequent filling of the holes with In0.53Ga0.47As. Here, we present
    detailed investigations of the hole morphologies measured by atomic force microscopy.
    Statistical analysis of a set of nanoholes reveals a high degree of symmetry for
    nearly half of them when etched at optimized temperatures. Overgrowth with 50–150 nm
    In0.52Al0.48As increases their diameter and elongates the holes along the [01̄1]-direction.
    By systematically scanning the parameter space, we were able to fill the holes
    with In0.53Ga0.47As, and by capping the filled holes and performing photoluminescence
    measurements, we observe photoluminescence emission in the O-band up into the
    C-band depending on the filling height of the nanoholes.</jats:p>
author:
- first_name: Dennis
  full_name: Deutsch, Dennis
  id: '23489'
  last_name: Deutsch
- first_name: C.
  full_name: Buchholz, C.
  last_name: Buchholz
- first_name: V.
  full_name: Zolatanosha, V.
  last_name: Zolatanosha
- first_name: K. D.
  full_name: Jöns, K. D.
  last_name: Jöns
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
citation:
  ama: Deutsch D, Buchholz C, Zolatanosha V, Jöns KD, Reuter D. Telecom C-band photon
    emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As
    layers. <i>AIP Advances</i>. 2023;13(5). doi:<a href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>
  apa: Deutsch, D., Buchholz, C., Zolatanosha, V., Jöns, K. D., &#38; Reuter, D. (2023).
    Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling
    nanoholes in In0.52Al0.48As layers. <i>AIP Advances</i>, <i>13</i>(5). <a href="https://doi.org/10.1063/5.0147281">https://doi.org/10.1063/5.0147281</a>
  bibtex: '@article{Deutsch_Buchholz_Zolatanosha_Jöns_Reuter_2023, title={Telecom
    C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes
    in In0.52Al0.48As layers}, volume={13}, DOI={<a href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>},
    number={5}, journal={AIP Advances}, publisher={AIP Publishing}, author={Deutsch,
    Dennis and Buchholz, C. and Zolatanosha, V. and Jöns, K. D. and Reuter, Dirk},
    year={2023} }'
  chicago: Deutsch, Dennis, C. Buchholz, V. Zolatanosha, K. D. Jöns, and Dirk Reuter.
    “Telecom C-Band Photon Emission from (In,Ga)As Quantum Dots Generated by Filling
    Nanoholes in In0.52Al0.48As Layers.” <i>AIP Advances</i> 13, no. 5 (2023). <a
    href="https://doi.org/10.1063/5.0147281">https://doi.org/10.1063/5.0147281</a>.
  ieee: 'D. Deutsch, C. Buchholz, V. Zolatanosha, K. D. Jöns, and D. Reuter, “Telecom
    C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes
    in In0.52Al0.48As layers,” <i>AIP Advances</i>, vol. 13, no. 5, 2023, doi: <a
    href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>.'
  mla: Deutsch, Dennis, et al. “Telecom C-Band Photon Emission from (In,Ga)As Quantum
    Dots Generated by Filling Nanoholes in In0.52Al0.48As Layers.” <i>AIP Advances</i>,
    vol. 13, no. 5, AIP Publishing, 2023, doi:<a href="https://doi.org/10.1063/5.0147281">10.1063/5.0147281</a>.
  short: D. Deutsch, C. Buchholz, V. Zolatanosha, K.D. Jöns, D. Reuter, AIP Advances
    13 (2023).
date_created: 2024-12-10T07:31:41Z
date_updated: 2024-12-10T07:32:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0147281
intvolume: '        13'
issue: '5'
language:
- iso: eng
publication: AIP Advances
publication_identifier:
  issn:
  - 2158-3226
publication_status: published
publisher: AIP Publishing
status: public
title: Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling
  nanoholes in In0.52Al0.48As layers
type: journal_article
user_id: '42514'
volume: 13
year: '2023'
...
---
_id: '28198'
author:
- first_name: Hans-Georg
  full_name: Steinrück, Hans-Georg
  id: '84268'
  last_name: Steinrück
  orcid: 0000-0001-6373-0877
citation:
  ama: Steinrück H-G. General relationship between salt concentration and x-ray absorption
    for binary electrolytes. <i>AIP Advances</i>. 2021;11(11):115119. doi:<a href="https://doi.org/10.1063/5.0072947">10.1063/5.0072947</a>
  apa: Steinrück, H.-G. (2021). General relationship between salt concentration and
    x-ray absorption for binary electrolytes. <i>AIP Advances</i>, <i>11</i>(11),
    115119. <a href="https://doi.org/10.1063/5.0072947">https://doi.org/10.1063/5.0072947</a>
  bibtex: '@article{Steinrück_2021, title={General relationship between salt concentration
    and x-ray absorption for binary electrolytes}, volume={11}, DOI={<a href="https://doi.org/10.1063/5.0072947">10.1063/5.0072947</a>},
    number={11}, journal={AIP Advances}, author={Steinrück, Hans-Georg}, year={2021},
    pages={115119} }'
  chicago: 'Steinrück, Hans-Georg. “General Relationship between Salt Concentration
    and X-Ray Absorption for Binary Electrolytes.” <i>AIP Advances</i> 11, no. 11
    (2021): 115119. <a href="https://doi.org/10.1063/5.0072947">https://doi.org/10.1063/5.0072947</a>.'
  ieee: 'H.-G. Steinrück, “General relationship between salt concentration and x-ray
    absorption for binary electrolytes,” <i>AIP Advances</i>, vol. 11, no. 11, p.
    115119, 2021, doi: <a href="https://doi.org/10.1063/5.0072947">10.1063/5.0072947</a>.'
  mla: Steinrück, Hans-Georg. “General Relationship between Salt Concentration and
    X-Ray Absorption for Binary Electrolytes.” <i>AIP Advances</i>, vol. 11, no. 11,
    2021, p. 115119, doi:<a href="https://doi.org/10.1063/5.0072947">10.1063/5.0072947</a>.
  short: H.-G. Steinrück, AIP Advances 11 (2021) 115119.
date_created: 2021-12-01T07:44:41Z
date_updated: 2022-01-06T06:57:53Z
department:
- _id: '633'
doi: 10.1063/5.0072947
intvolume: '        11'
issue: '11'
language:
- iso: eng
page: '115119'
publication: AIP Advances
publication_identifier:
  issn:
  - 2158-3226
publication_status: published
status: public
title: General relationship between salt concentration and x-ray absorption for binary
  electrolytes
type: journal_article
user_id: '84268'
volume: 11
year: '2021'
...
---
_id: '22533'
article_number: '075013'
author:
- first_name: F.
  full_name: Meier, F.
  last_name: Meier
- first_name: M.
  full_name: Protte, M.
  last_name: Protte
- first_name: E.
  full_name: Baron, E.
  last_name: Baron
- first_name: M.
  full_name: Feneberg, M.
  last_name: Feneberg
- first_name: R.
  full_name: Goldhahn, R.
  last_name: Goldhahn
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: D. J.
  full_name: As, D. J.
  last_name: As
citation:
  ama: Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride
    on silicon (001) and 3C-silicon carbide (001). <i>AIP Advances</i>. 2021. doi:<a
    href="https://doi.org/10.1063/5.0053865">10.1063/5.0053865</a>
  apa: Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., &#38;
    As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001)
    and 3C-silicon carbide (001). <i>AIP Advances</i>. <a href="https://doi.org/10.1063/5.0053865">https://doi.org/10.1063/5.0053865</a>
  bibtex: '@article{Meier_Protte_Baron_Feneberg_Goldhahn_Reuter_As_2021, title={Selective
    area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)},
    DOI={<a href="https://doi.org/10.1063/5.0053865">10.1063/5.0053865</a>}, number={075013},
    journal={AIP Advances}, author={Meier, F. and Protte, M. and Baron, E. and Feneberg,
    M. and Goldhahn, R. and Reuter, Dirk and As, D. J.}, year={2021} }'
  chicago: Meier, F., M. Protte, E. Baron, M. Feneberg, R. Goldhahn, Dirk Reuter,
    and D. J. As. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001)
    and 3C-Silicon Carbide (001).” <i>AIP Advances</i>, 2021. <a href="https://doi.org/10.1063/5.0053865">https://doi.org/10.1063/5.0053865</a>.
  ieee: F. Meier <i>et al.</i>, “Selective area growth of cubic gallium nitride on
    silicon (001) and 3C-silicon carbide (001),” <i>AIP Advances</i>, 2021.
  mla: Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon
    (001) and 3C-Silicon Carbide (001).” <i>AIP Advances</i>, 075013, 2021, doi:<a
    href="https://doi.org/10.1063/5.0053865">10.1063/5.0053865</a>.
  short: F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J.
    As, AIP Advances (2021).
date_created: 2021-07-07T07:01:07Z
date_updated: 2022-01-06T06:55:36Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0053865
language:
- iso: eng
publication: AIP Advances
publication_identifier:
  issn:
  - 2158-3226
publication_status: published
status: public
title: Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon
  carbide (001)
type: journal_article
user_id: '42514'
year: '2021'
...
---
_id: '23843'
article_number: '075013'
author:
- first_name: F.
  full_name: Meier, F.
  last_name: Meier
- first_name: M.
  full_name: Protte, M.
  last_name: Protte
- first_name: E.
  full_name: Baron, E.
  last_name: Baron
- first_name: M.
  full_name: Feneberg, M.
  last_name: Feneberg
- first_name: R.
  full_name: Goldhahn, R.
  last_name: Goldhahn
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
citation:
  ama: Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride
    on silicon (001) and 3C-silicon carbide (001). <i>AIP Advances</i>. Published
    online 2021. doi:<a href="https://doi.org/10.1063/5.0053865">10.1063/5.0053865</a>
  apa: Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., &#38;
    As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001)
    and 3C-silicon carbide (001). <i>AIP Advances</i>, Article 075013. <a href="https://doi.org/10.1063/5.0053865">https://doi.org/10.1063/5.0053865</a>
  bibtex: '@article{Meier_Protte_Baron_Feneberg_Goldhahn_Reuter_As_2021, title={Selective
    area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)},
    DOI={<a href="https://doi.org/10.1063/5.0053865">10.1063/5.0053865</a>}, number={075013},
    journal={AIP Advances}, author={Meier, F. and Protte, M. and Baron, E. and Feneberg,
    M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}, year={2021} }'
  chicago: Meier, F., M. Protte, E. Baron, M. Feneberg, R. Goldhahn, Dirk Reuter,
    and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride on Silicon
    (001) and 3C-Silicon Carbide (001).” <i>AIP Advances</i>, 2021. <a href="https://doi.org/10.1063/5.0053865">https://doi.org/10.1063/5.0053865</a>.
  ieee: 'F. Meier <i>et al.</i>, “Selective area growth of cubic gallium nitride on
    silicon (001) and 3C-silicon carbide (001),” <i>AIP Advances</i>, Art. no. 075013,
    2021, doi: <a href="https://doi.org/10.1063/5.0053865">10.1063/5.0053865</a>.'
  mla: Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon
    (001) and 3C-Silicon Carbide (001).” <i>AIP Advances</i>, 075013, 2021, doi:<a
    href="https://doi.org/10.1063/5.0053865">10.1063/5.0053865</a>.
  short: F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J.
    As, AIP Advances (2021).
date_created: 2021-09-07T09:20:42Z
date_updated: 2023-10-09T09:01:15Z
department:
- _id: '230'
- _id: '429'
doi: 10.1063/5.0053865
language:
- iso: eng
publication: AIP Advances
publication_identifier:
  issn:
  - 2158-3226
publication_status: published
status: public
title: Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon
  carbide (001)
type: journal_article
user_id: '14931'
year: '2021'
...
---
_id: '7031'
article_number: '065306'
author:
- first_name: Tobias
  full_name: Kramer, Tobias
  last_name: Kramer
- first_name: Christoph
  full_name: Kreisbeck, Christoph
  last_name: Kreisbeck
- first_name: Christian
  full_name: Riha, Christian
  last_name: Riha
- first_name: Olivio
  full_name: Chiatti, Olivio
  last_name: Chiatti
- first_name: Sven S.
  full_name: Buchholz, Sven S.
  last_name: Buchholz
- first_name: Andreas D.
  full_name: Wieck, Andreas D.
  last_name: Wieck
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Saskia F.
  full_name: Fischer, Saskia F.
  last_name: Fischer
citation:
  ama: Kramer T, Kreisbeck C, Riha C, et al. Thermal energy and charge currents in
    multi-terminal nanorings. <i>AIP Advances</i>. 2016;6(6). doi:<a href="https://doi.org/10.1063/1.4953812">10.1063/1.4953812</a>
  apa: Kramer, T., Kreisbeck, C., Riha, C., Chiatti, O., Buchholz, S. S., Wieck, A.
    D., … Fischer, S. F. (2016). Thermal energy and charge currents in multi-terminal
    nanorings. <i>AIP Advances</i>, <i>6</i>(6). <a href="https://doi.org/10.1063/1.4953812">https://doi.org/10.1063/1.4953812</a>
  bibtex: '@article{Kramer_Kreisbeck_Riha_Chiatti_Buchholz_Wieck_Reuter_Fischer_2016,
    title={Thermal energy and charge currents in multi-terminal nanorings}, volume={6},
    DOI={<a href="https://doi.org/10.1063/1.4953812">10.1063/1.4953812</a>}, number={6065306},
    journal={AIP Advances}, publisher={AIP Publishing}, author={Kramer, Tobias and
    Kreisbeck, Christoph and Riha, Christian and Chiatti, Olivio and Buchholz, Sven
    S. and Wieck, Andreas D. and Reuter, Dirk and Fischer, Saskia F.}, year={2016}
    }'
  chicago: Kramer, Tobias, Christoph Kreisbeck, Christian Riha, Olivio Chiatti, Sven
    S. Buchholz, Andreas D. Wieck, Dirk Reuter, and Saskia F. Fischer. “Thermal Energy
    and Charge Currents in Multi-Terminal Nanorings.” <i>AIP Advances</i> 6, no. 6
    (2016). <a href="https://doi.org/10.1063/1.4953812">https://doi.org/10.1063/1.4953812</a>.
  ieee: T. Kramer <i>et al.</i>, “Thermal energy and charge currents in multi-terminal
    nanorings,” <i>AIP Advances</i>, vol. 6, no. 6, 2016.
  mla: Kramer, Tobias, et al. “Thermal Energy and Charge Currents in Multi-Terminal
    Nanorings.” <i>AIP Advances</i>, vol. 6, no. 6, 065306, AIP Publishing, 2016,
    doi:<a href="https://doi.org/10.1063/1.4953812">10.1063/1.4953812</a>.
  short: T. Kramer, C. Kreisbeck, C. Riha, O. Chiatti, S.S. Buchholz, A.D. Wieck,
    D. Reuter, S.F. Fischer, AIP Advances 6 (2016).
date_created: 2019-01-28T11:22:15Z
date_updated: 2022-01-06T07:03:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4953812
intvolume: '         6'
issue: '6'
language:
- iso: eng
publication: AIP Advances
publication_identifier:
  issn:
  - 2158-3226
publication_status: published
publisher: AIP Publishing
status: public
title: Thermal energy and charge currents in multi-terminal nanorings
type: journal_article
user_id: '42514'
volume: 6
year: '2016'
...
---
_id: '7488'
article_number: '072114'
author:
- first_name: Marcel
  full_name: Ruth, Marcel
  last_name: Ruth
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
citation:
  ama: Ruth M, Meier C. Structural enhancement of ZnO on SiO2 for photonic applications.
    <i>AIP Advances</i>. 2013;3(7). doi:<a href="https://doi.org/10.1063/1.4815974">10.1063/1.4815974</a>
  apa: Ruth, M., &#38; Meier, C. (2013). Structural enhancement of ZnO on SiO2 for
    photonic applications. <i>AIP Advances</i>, <i>3</i>(7). <a href="https://doi.org/10.1063/1.4815974">https://doi.org/10.1063/1.4815974</a>
  bibtex: '@article{Ruth_Meier_2013, title={Structural enhancement of ZnO on SiO2
    for photonic applications}, volume={3}, DOI={<a href="https://doi.org/10.1063/1.4815974">10.1063/1.4815974</a>},
    number={7072114}, journal={AIP Advances}, publisher={AIP Publishing}, author={Ruth,
    Marcel and Meier, Cedrik}, year={2013} }'
  chicago: Ruth, Marcel, and Cedrik Meier. “Structural Enhancement of ZnO on SiO2
    for Photonic Applications.” <i>AIP Advances</i> 3, no. 7 (2013). <a href="https://doi.org/10.1063/1.4815974">https://doi.org/10.1063/1.4815974</a>.
  ieee: M. Ruth and C. Meier, “Structural enhancement of ZnO on SiO2 for photonic
    applications,” <i>AIP Advances</i>, vol. 3, no. 7, 2013.
  mla: Ruth, Marcel, and Cedrik Meier. “Structural Enhancement of ZnO on SiO2 for
    Photonic Applications.” <i>AIP Advances</i>, vol. 3, no. 7, 072114, AIP Publishing,
    2013, doi:<a href="https://doi.org/10.1063/1.4815974">10.1063/1.4815974</a>.
  short: M. Ruth, C. Meier, AIP Advances 3 (2013).
date_created: 2019-02-04T14:26:46Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.4815974
intvolume: '         3'
issue: '7'
language:
- iso: eng
publication: AIP Advances
publication_identifier:
  issn:
  - 2158-3226
publication_status: published
publisher: AIP Publishing
status: public
title: Structural enhancement of ZnO on SiO2 for photonic applications
type: journal_article
user_id: '20798'
volume: 3
year: '2013'
...