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Trapp, D. Reuter, Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).","apa":"Trapp, A., &#38; Reuter, D. (2018). Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates. <i>Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena</i>, <i>36</i>(2). <a href=\"https://doi.org/10.1116/1.5012957\">https://doi.org/10.1116/1.5012957</a>","ieee":"A. Trapp and D. Reuter, “Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates,” <i>Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena</i>, vol. 36, no. 2, 2018.","ama":"Trapp A, Reuter D. Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates. <i>Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena</i>. 2018;36(2). doi:<a href=\"https://doi.org/10.1116/1.5012957\">10.1116/1.5012957</a>","bibtex":"@article{Trapp_Reuter_2018, title={Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates}, volume={36}, DOI={<a href=\"https://doi.org/10.1116/1.5012957\">10.1116/1.5012957</a>}, number={202D106}, journal={Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Trapp, Alexander and Reuter, Dirk}, year={2018} }","mla":"Trapp, Alexander, and Dirk Reuter. “Formation of Self-Assembled GaAs Quantum Dots via Droplet Epitaxy on Misoriented GaAs(111)B Substrates.” <i>Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena</i>, vol. 36, no. 2, 02D106, American Vacuum Society, 2018, doi:<a href=\"https://doi.org/10.1116/1.5012957\">10.1116/1.5012957</a>."},"volume":36,"user_id":"42514","publisher":"American Vacuum Society","_id":"7018","status":"public"},{"issue":"2","publication":"Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-01-28T09:31:24Z","publication_status":"published","date_updated":"2022-01-06T07:03:26Z","intvolume":"        36","year":"2018","title":"Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks","author":[{"first_name":"Viktoryia","last_name":"Zolatanosha","full_name":"Zolatanosha, Viktoryia"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"}],"publication_identifier":{"issn":["2166-2746","2166-2754"]},"doi":"10.1116/1.5013650","article_number":"02D105","language":[{"iso":"eng"}],"citation":{"ama":"Zolatanosha V, Reuter D. Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks. <i>Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena</i>. 2018;36(2). doi:<a href=\"https://doi.org/10.1116/1.5013650\">10.1116/1.5013650</a>","bibtex":"@article{Zolatanosha_Reuter_2018, title={Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks}, volume={36}, DOI={<a href=\"https://doi.org/10.1116/1.5013650\">10.1116/1.5013650</a>}, number={202D105}, journal={Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Zolatanosha, Viktoryia and Reuter, Dirk}, year={2018} }","mla":"Zolatanosha, Viktoryia, and Dirk Reuter. “Site-Controlled Droplet Epitaxy of GaAs Quantum Dots by Deposition through Shadow Masks.” <i>Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena</i>, vol. 36, no. 2, 02D105, American Vacuum Society, 2018, doi:<a href=\"https://doi.org/10.1116/1.5013650\">10.1116/1.5013650</a>.","chicago":"Zolatanosha, Viktoryia, and Dirk Reuter. “Site-Controlled Droplet Epitaxy of GaAs Quantum Dots by Deposition through Shadow Masks.” <i>Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena</i> 36, no. 2 (2018). <a href=\"https://doi.org/10.1116/1.5013650\">https://doi.org/10.1116/1.5013650</a>.","short":"V. Zolatanosha, D. Reuter, Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).","apa":"Zolatanosha, V., &#38; Reuter, D. (2018). Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks. <i>Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena</i>, <i>36</i>(2). <a href=\"https://doi.org/10.1116/1.5013650\">https://doi.org/10.1116/1.5013650</a>","ieee":"V. Zolatanosha and D. Reuter, “Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks,” <i>Journal of Vacuum Science &#38; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena</i>, vol. 36, no. 2, 2018."},"status":"public","user_id":"42514","volume":36,"_id":"7019","publisher":"American Vacuum Society"}]