---
_id: '61258'
abstract:
- lang: eng
  text: <jats:title>Abstract</jats:title><jats:p>Thermal stability is crucial for
    doped organic semiconductors (OSCs) and their applications in organic thermoelectric
    (OTE) devices. However, the capacity of n‐dopants to produce thermally stable
    n‐doped OSC films has not been thoroughly explored, with few reports of high thermal
    stability. Here, a novel n‐dopant, phosphazenium tetrafluoroborate (P<jats:sub>2</jats:sub>BF<jats:sub>4</jats:sub>)
    is introduced, which effectively induces n‐doping in N2200, P(PzDPP‐CT2) and several
    other commonly used OSCs. Remarkably, the electrical conductivity of P<jats:sub>2</jats:sub>BF<jats:sub>4</jats:sub>‐doped
    OSC films remains almost unchanged even after heating at temperatures &gt; 150 °C
    for 24 h, far superior to the films doped with benchmark N‐DMBI. The exceptional
    thermal stability observed in P<jats:sub>2</jats:sub>BF<jats:sub>4</jats:sub>‐doped
    P(PzDPP‐CT2) films allows for stable operation of the corresponding organic thermoelectric
    devices at 150 °C for 16 h, a milestone not previously achieved. This study offers
    valuable insights into the development of n‐dopants capable of producing OSCs
    with outstanding thermal stability, paving the way for the practical realization
    of OTE devices with enhanced operation stability.</jats:p>
article_number: '2400767'
author:
- first_name: Huan
  full_name: Wei, Huan
  last_name: Wei
- first_name: Jing
  full_name: Guo, Jing
  last_name: Guo
- first_name: Heng
  full_name: Liu, Heng
  last_name: Liu
- first_name: Tong
  full_name: Wu, Tong
  last_name: Wu
- first_name: Ping‐An
  full_name: Chen, Ping‐An
  last_name: Chen
- first_name: Chuanding
  full_name: Dong, Chuanding
  last_name: Dong
- first_name: Shu‐Jen
  full_name: Wang, Shu‐Jen
  last_name: Wang
- first_name: Stefan
  full_name: Schumacher, Stefan
  id: '27271'
  last_name: Schumacher
  orcid: 0000-0003-4042-4951
- first_name: Yugang
  full_name: Bai, Yugang
  last_name: Bai
- first_name: Ting
  full_name: Lei, Ting
  last_name: Lei
- first_name: Suhao
  full_name: Wang, Suhao
  last_name: Wang
- first_name: Yuanyuan
  full_name: Hu, Yuanyuan
  last_name: Hu
citation:
  ama: Wei H, Guo J, Liu H, et al. Novel Phosphazenium Tetrafluoroborate Dopant Enables
    Efficient and Thermally Stable n‐Doped Organic Semiconductors. <i>Advanced Electronic
    Materials</i>. Published online 2024. doi:<a href="https://doi.org/10.1002/aelm.202400767">10.1002/aelm.202400767</a>
  apa: Wei, H., Guo, J., Liu, H., Wu, T., Chen, P., Dong, C., Wang, S., Schumacher,
    S., Bai, Y., Lei, T., Wang, S., &#38; Hu, Y. (2024). Novel Phosphazenium Tetrafluoroborate
    Dopant Enables Efficient and Thermally Stable n‐Doped Organic Semiconductors.
    <i>Advanced Electronic Materials</i>, Article 2400767. <a href="https://doi.org/10.1002/aelm.202400767">https://doi.org/10.1002/aelm.202400767</a>
  bibtex: '@article{Wei_Guo_Liu_Wu_Chen_Dong_Wang_Schumacher_Bai_Lei_et al._2024,
    title={Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally
    Stable n‐Doped Organic Semiconductors}, DOI={<a href="https://doi.org/10.1002/aelm.202400767">10.1002/aelm.202400767</a>},
    number={2400767}, journal={Advanced Electronic Materials}, publisher={Wiley},
    author={Wei, Huan and Guo, Jing and Liu, Heng and Wu, Tong and Chen, Ping‐An and
    Dong, Chuanding and Wang, Shu‐Jen and Schumacher, Stefan and Bai, Yugang and Lei,
    Ting and et al.}, year={2024} }'
  chicago: Wei, Huan, Jing Guo, Heng Liu, Tong Wu, Ping‐An Chen, Chuanding Dong, Shu‐Jen
    Wang, et al. “Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and
    Thermally Stable N‐Doped Organic Semiconductors.” <i>Advanced Electronic Materials</i>,
    2024. <a href="https://doi.org/10.1002/aelm.202400767">https://doi.org/10.1002/aelm.202400767</a>.
  ieee: 'H. Wei <i>et al.</i>, “Novel Phosphazenium Tetrafluoroborate Dopant Enables
    Efficient and Thermally Stable n‐Doped Organic Semiconductors,” <i>Advanced Electronic
    Materials</i>, Art. no. 2400767, 2024, doi: <a href="https://doi.org/10.1002/aelm.202400767">10.1002/aelm.202400767</a>.'
  mla: Wei, Huan, et al. “Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient
    and Thermally Stable N‐Doped Organic Semiconductors.” <i>Advanced Electronic Materials</i>,
    2400767, Wiley, 2024, doi:<a href="https://doi.org/10.1002/aelm.202400767">10.1002/aelm.202400767</a>.
  short: H. Wei, J. Guo, H. Liu, T. Wu, P. Chen, C. Dong, S. Wang, S. Schumacher,
    Y. Bai, T. Lei, S. Wang, Y. Hu, Advanced Electronic Materials (2024).
date_created: 2025-09-12T11:25:26Z
date_updated: 2025-09-12T11:26:26Z
department:
- _id: '15'
- _id: '170'
- _id: '297'
- _id: '35'
- _id: '230'
doi: 10.1002/aelm.202400767
language:
- iso: eng
publication: Advanced Electronic Materials
publication_identifier:
  issn:
  - 2199-160X
  - 2199-160X
publication_status: published
publisher: Wiley
status: public
title: Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally
  Stable n‐Doped Organic Semiconductors
type: journal_article
user_id: '16199'
year: '2024'
...