[{"doi":"10.13052/jmmc2246-137x.131","date_updated":"2023-03-22T10:11:18Z","volume":1,"author":[{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Assion","full_name":"Assion, F.","first_name":"F."},{"last_name":"Vidor","full_name":"Vidor, F. F.","first_name":"F. F."},{"last_name":"Wirth","full_name":"Wirth, G. I.","first_name":"G. I."}],"intvolume":"         1","page":"197-214","citation":{"ieee":"U. Hilleringmann, F. Assion, F. F. Vidor, and G. I. Wirth, “Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology,” <i>Journal of Machine to Machine Communications</i>, vol. 1, no. 3, pp. 197–214, 2015, doi: <a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">10.13052/jmmc2246-137x.131</a>.","chicago":"Hilleringmann, Ulrich, F. Assion, F. F. Vidor, and G. I. Wirth. “Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology.” <i>Journal of Machine to Machine Communications</i> 1, no. 3 (2015): 197–214. <a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">https://doi.org/10.13052/jmmc2246-137x.131</a>.","ama":"Hilleringmann U, Assion F, Vidor FF, Wirth GI. Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology. <i>Journal of Machine to Machine Communications</i>. 2015;1(3):197-214. doi:<a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">10.13052/jmmc2246-137x.131</a>","bibtex":"@article{Hilleringmann_Assion_Vidor_Wirth_2015, title={Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology}, volume={1}, DOI={<a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">10.13052/jmmc2246-137x.131</a>}, number={3}, journal={Journal of Machine to Machine Communications}, publisher={River Publishers}, author={Hilleringmann, Ulrich and Assion, F. and Vidor, F. F. and Wirth, G. I.}, year={2015}, pages={197–214} }","mla":"Hilleringmann, Ulrich, et al. “Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology.” <i>Journal of Machine to Machine Communications</i>, vol. 1, no. 3, River Publishers, 2015, pp. 197–214, doi:<a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">10.13052/jmmc2246-137x.131</a>.","short":"U. Hilleringmann, F. Assion, F.F. Vidor, G.I. Wirth, Journal of Machine to Machine Communications 1 (2015) 197–214.","apa":"Hilleringmann, U., Assion, F., Vidor, F. F., &#38; Wirth, G. I. (2015). Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology. <i>Journal of Machine to Machine Communications</i>, <i>1</i>(3), 197–214. <a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">https://doi.org/10.13052/jmmc2246-137x.131</a>"},"publication_identifier":{"issn":["2246-137X"]},"publication_status":"published","_id":"39495","department":[{"_id":"59"}],"user_id":"20179","status":"public","type":"journal_article","title":"Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology","publisher":"River Publishers","date_created":"2023-01-24T11:40:14Z","year":"2015","issue":"3","keyword":["General Medicine"],"language":[{"iso":"eng"}],"publication":"Journal of Machine to Machine Communications"}]