---
_id: '54855'
abstract:
- lang: eng
  text: <jats:p>Density-functional theory calculations on P-rich InP(001):H surfaces
    are presented. Depending on temperature, pressure and substrate doping, hydrogen
    desorption or adsorption will occur and influence the surface electronic properties.
    For p-doped samples, the charge transition levels of the P dangling bond defects
    resulting from H desorption will lead to Fermi level pinning in the lower half
    of the band gap. This explains recent experimental data. For n-doped substrates,
    H-deficient surfaces are the ground-state structure. This will lead to Fermi level
    pinning below the bulk conduction band minimum. Surface defects resulting from
    the adsorption of additional hydrogen can be expected as well, but affect the
    surface electronic properties less than H desorption.</jats:p>
author:
- first_name: Rachele
  full_name: Sciotto, Rachele
  last_name: Sciotto
- first_name: Isaac Azahel
  full_name: Ruiz Alvarado, Isaac Azahel
  id: '79462'
  last_name: Ruiz Alvarado
  orcid: 0000-0002-4710-1170
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
citation:
  ama: Sciotto R, Ruiz Alvarado IA, Schmidt WG. Substrate Doping and Defect Influence
    on P-Rich InP(001):H Surface Properties. <i>Surfaces</i>. 2024;7(1):79-87. doi:<a
    href="https://doi.org/10.3390/surfaces7010006">10.3390/surfaces7010006</a>
  apa: Sciotto, R., Ruiz Alvarado, I. A., &#38; Schmidt, W. G. (2024). Substrate Doping
    and Defect Influence on P-Rich InP(001):H Surface Properties. <i>Surfaces</i>,
    <i>7</i>(1), 79–87. <a href="https://doi.org/10.3390/surfaces7010006">https://doi.org/10.3390/surfaces7010006</a>
  bibtex: '@article{Sciotto_Ruiz Alvarado_Schmidt_2024, title={Substrate Doping and
    Defect Influence on P-Rich InP(001):H Surface Properties}, volume={7}, DOI={<a
    href="https://doi.org/10.3390/surfaces7010006">10.3390/surfaces7010006</a>}, number={1},
    journal={Surfaces}, publisher={MDPI AG}, author={Sciotto, Rachele and Ruiz Alvarado,
    Isaac Azahel and Schmidt, Wolf Gero}, year={2024}, pages={79–87} }'
  chicago: 'Sciotto, Rachele, Isaac Azahel Ruiz Alvarado, and Wolf Gero Schmidt. “Substrate
    Doping and Defect Influence on P-Rich InP(001):H Surface Properties.” <i>Surfaces</i>
    7, no. 1 (2024): 79–87. <a href="https://doi.org/10.3390/surfaces7010006">https://doi.org/10.3390/surfaces7010006</a>.'
  ieee: 'R. Sciotto, I. A. Ruiz Alvarado, and W. G. Schmidt, “Substrate Doping and
    Defect Influence on P-Rich InP(001):H Surface Properties,” <i>Surfaces</i>, vol.
    7, no. 1, pp. 79–87, 2024, doi: <a href="https://doi.org/10.3390/surfaces7010006">10.3390/surfaces7010006</a>.'
  mla: Sciotto, Rachele, et al. “Substrate Doping and Defect Influence on P-Rich InP(001):H
    Surface Properties.” <i>Surfaces</i>, vol. 7, no. 1, MDPI AG, 2024, pp. 79–87,
    doi:<a href="https://doi.org/10.3390/surfaces7010006">10.3390/surfaces7010006</a>.
  short: R. Sciotto, I.A. Ruiz Alvarado, W.G. Schmidt, Surfaces 7 (2024) 79–87.
date_created: 2024-06-24T06:24:26Z
date_updated: 2025-12-05T13:36:19Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '230'
- _id: '27'
- _id: '35'
doi: 10.3390/surfaces7010006
intvolume: '         7'
issue: '1'
language:
- iso: eng
page: 79-87
project:
- _id: '52'
  name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: Surfaces
publication_identifier:
  issn:
  - 2571-9637
publication_status: published
publisher: MDPI AG
status: public
title: Substrate Doping and Defect Influence on P-Rich InP(001):H Surface Properties
type: journal_article
user_id: '16199'
volume: 7
year: '2024'
...