[{"title":"Aggregation of a Pseudoisocyanine Chloride in Aqueous NaCl Solution","year":"2003","author":[{"full_name":"Herzog, Bernd","first_name":"Bernd","last_name":"Herzog"},{"full_name":"Huber, Klaus","last_name":"Huber","first_name":"Klaus","id":"237"},{"first_name":"Horst","last_name":"Stegemeyer","full_name":"Stegemeyer, Horst"}],"publication_identifier":{"issn":["0743-7463","1520-5827"]},"publication_status":"published","date_updated":"2023-02-13T09:07:30Z","intvolume":"        19","language":[{"iso":"eng"}],"doi":"10.1021/la020980w","issue":"13","publication":"Langmuir","date_created":"2023-02-13T09:07:00Z","keyword":["Electrochemistry","Spectroscopy","Surfaces and Interfaces","Condensed Matter Physics","General Materials Science"],"type":"journal_article","department":[{"_id":"314"}],"status":"public","page":"5223-5232","publisher":"American Chemical Society (ACS)","_id":"42038","user_id":"237","volume":19,"citation":{"ama":"Herzog B, Huber K, Stegemeyer H. Aggregation of a Pseudoisocyanine Chloride in Aqueous NaCl Solution. <i>Langmuir</i>. 2003;19(13):5223-5232. doi:<a href=\"https://doi.org/10.1021/la020980w\">10.1021/la020980w</a>","bibtex":"@article{Herzog_Huber_Stegemeyer_2003, title={Aggregation of a Pseudoisocyanine Chloride in Aqueous NaCl Solution}, volume={19}, DOI={<a href=\"https://doi.org/10.1021/la020980w\">10.1021/la020980w</a>}, number={13}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Herzog, Bernd and Huber, Klaus and Stegemeyer, Horst}, year={2003}, pages={5223–5232} }","mla":"Herzog, Bernd, et al. “Aggregation of a Pseudoisocyanine Chloride in Aqueous NaCl Solution.” <i>Langmuir</i>, vol. 19, no. 13, American Chemical Society (ACS), 2003, pp. 5223–32, doi:<a href=\"https://doi.org/10.1021/la020980w\">10.1021/la020980w</a>.","short":"B. Herzog, K. Huber, H. Stegemeyer, Langmuir 19 (2003) 5223–5232.","chicago":"Herzog, Bernd, Klaus Huber, and Horst Stegemeyer. “Aggregation of a Pseudoisocyanine Chloride in Aqueous NaCl Solution.” <i>Langmuir</i> 19, no. 13 (2003): 5223–32. <a href=\"https://doi.org/10.1021/la020980w\">https://doi.org/10.1021/la020980w</a>.","apa":"Herzog, B., Huber, K., &#38; Stegemeyer, H. (2003). Aggregation of a Pseudoisocyanine Chloride in Aqueous NaCl Solution. <i>Langmuir</i>, <i>19</i>(13), 5223–5232. <a href=\"https://doi.org/10.1021/la020980w\">https://doi.org/10.1021/la020980w</a>","ieee":"B. Herzog, K. Huber, and H. Stegemeyer, “Aggregation of a Pseudoisocyanine Chloride in Aqueous NaCl Solution,” <i>Langmuir</i>, vol. 19, no. 13, pp. 5223–5232, 2003, doi: <a href=\"https://doi.org/10.1021/la020980w\">10.1021/la020980w</a>."}},{"language":[{"iso":"eng"}],"doi":"10.1002/macp.200300017","author":[{"last_name":"Röder","first_name":"Thorsten","full_name":"Röder, Thorsten"},{"full_name":"Kramer, Thomas","last_name":"Kramer","first_name":"Thomas"},{"id":"237","first_name":"Klaus","last_name":"Huber","full_name":"Huber, Klaus"},{"id":"254","last_name":"Kitzerow","first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried"}],"publication_identifier":{"issn":["1022-1352","1521-3935"]},"year":"2003","title":"Preparation of Positively and Negatively Charged Organic Colloids from a Single Precursor","intvolume":"       204","date_updated":"2023-02-15T09:12:34Z","publication_status":"published","date_created":"2023-01-25T12:52:38Z","department":[{"_id":"313"},{"_id":"638"}],"keyword":["Materials Chemistry","Organic Chemistry","Polymers and Plastics","Physical and Theoretical Chemistry","Condensed Matter Physics"],"type":"journal_article","issue":"18","publication":"Macromolecular Chemistry and Physics","publisher":"Wiley","_id":"39990","page":"2204-2211","volume":204,"user_id":"254","status":"public","citation":{"ieee":"T. Röder, T. Kramer, K. Huber, and H.-S. Kitzerow, “Preparation of Positively and Negatively Charged Organic Colloids from a Single Precursor,” <i>Macromolecular Chemistry and Physics</i>, vol. 204, no. 18, pp. 2204–2211, 2003, doi: <a href=\"https://doi.org/10.1002/macp.200300017\">10.1002/macp.200300017</a>.","apa":"Röder, T., Kramer, T., Huber, K., &#38; Kitzerow, H.-S. (2003). Preparation of Positively and Negatively Charged Organic Colloids from a Single Precursor. <i>Macromolecular Chemistry and Physics</i>, <i>204</i>(18), 2204–2211. <a href=\"https://doi.org/10.1002/macp.200300017\">https://doi.org/10.1002/macp.200300017</a>","chicago":"Röder, Thorsten, Thomas Kramer, Klaus Huber, and Heinz-Siegfried Kitzerow. “Preparation of Positively and Negatively Charged Organic Colloids from a Single Precursor.” <i>Macromolecular Chemistry and Physics</i> 204, no. 18 (2003): 2204–11. <a href=\"https://doi.org/10.1002/macp.200300017\">https://doi.org/10.1002/macp.200300017</a>.","short":"T. Röder, T. Kramer, K. Huber, H.-S. Kitzerow, Macromolecular Chemistry and Physics 204 (2003) 2204–2211.","mla":"Röder, Thorsten, et al. “Preparation of Positively and Negatively Charged Organic Colloids from a Single Precursor.” <i>Macromolecular Chemistry and Physics</i>, vol. 204, no. 18, Wiley, 2003, pp. 2204–11, doi:<a href=\"https://doi.org/10.1002/macp.200300017\">10.1002/macp.200300017</a>.","bibtex":"@article{Röder_Kramer_Huber_Kitzerow_2003, title={Preparation of Positively and Negatively Charged Organic Colloids from a Single Precursor}, volume={204}, DOI={<a href=\"https://doi.org/10.1002/macp.200300017\">10.1002/macp.200300017</a>}, number={18}, journal={Macromolecular Chemistry and Physics}, publisher={Wiley}, author={Röder, Thorsten and Kramer, Thomas and Huber, Klaus and Kitzerow, Heinz-Siegfried}, year={2003}, pages={2204–2211} }","ama":"Röder T, Kramer T, Huber K, Kitzerow H-S. Preparation of Positively and Negatively Charged Organic Colloids from a Single Precursor. <i>Macromolecular Chemistry and Physics</i>. 2003;204(18):2204-2211. doi:<a href=\"https://doi.org/10.1002/macp.200300017\">10.1002/macp.200300017</a>"}},{"status":"public","year":"2003","title":"Nanometer scale organic thin film transistors with Pentacene","author":[{"full_name":"Pannemann, Ch.","last_name":"Pannemann","first_name":"Ch."},{"full_name":"Diekmann, T.","first_name":"T.","last_name":"Diekmann"},{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"}],"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","date_updated":"2023-03-21T10:04:43Z","page":"845-852","_id":"39851","publisher":"Elsevier BV","language":[{"iso":"eng"}],"user_id":"20179","doi":"10.1016/s0167-9317(03)00146-1","volume":"67-68","publication":"Microelectronic Engineering","citation":{"mla":"Pannemann, Ch., et al. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i>, vol. 67–68, Elsevier BV, 2003, pp. 845–52, doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>.","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale organic thin film transistors with Pentacene}, volume={67–68}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852} }","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>. 2003;67-68:845-852. doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>","ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic thin film transistors with Pentacene,” <i>Microelectronic Engineering</i>, vol. 67–68, pp. 845–852, 2003, doi: <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>.","apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2003). Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>, <i>67–68</i>, 845–852. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>","short":"Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering 67–68 (2003) 845–852.","chicago":"Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i> 67–68 (2003): 845–52. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>."},"date_created":"2023-01-25T08:39:40Z","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}]},{"page":"5027-5030","_id":"35364","publisher":"American Chemical Society (ACS)","user_id":"466","volume":18,"status":"public","citation":{"short":"C. Stubenrauch, C. Frank, R. Strey, D. Burgemeister, C. Schmidt, Langmuir 18 (2002) 5027–5030.","chicago":"Stubenrauch, Cosima, Christian Frank, Reinhard Strey, Daniel Burgemeister, and Claudia Schmidt. “Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study.” <i>Langmuir</i> 18, no. 13 (2002): 5027–30. <a href=\"https://doi.org/10.1021/la0201725\">https://doi.org/10.1021/la0201725</a>.","ieee":"C. Stubenrauch, C. Frank, R. Strey, D. Burgemeister, and C. Schmidt, “Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study,” <i>Langmuir</i>, vol. 18, no. 13, pp. 5027–5030, 2002, doi: <a href=\"https://doi.org/10.1021/la0201725\">10.1021/la0201725</a>.","apa":"Stubenrauch, C., Frank, C., Strey, R., Burgemeister, D., &#38; Schmidt, C. (2002). Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study. <i>Langmuir</i>, <i>18</i>(13), 5027–5030. <a href=\"https://doi.org/10.1021/la0201725\">https://doi.org/10.1021/la0201725</a>","bibtex":"@article{Stubenrauch_Frank_Strey_Burgemeister_Schmidt_2002, title={Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study}, volume={18}, DOI={<a href=\"https://doi.org/10.1021/la0201725\">10.1021/la0201725</a>}, number={13}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Stubenrauch, Cosima and Frank, Christian and Strey, Reinhard and Burgemeister, Daniel and Schmidt, Claudia}, year={2002}, pages={5027–5030} }","ama":"Stubenrauch C, Frank C, Strey R, Burgemeister D, Schmidt C. Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study. <i>Langmuir</i>. 2002;18(13):5027-5030. doi:<a href=\"https://doi.org/10.1021/la0201725\">10.1021/la0201725</a>","mla":"Stubenrauch, Cosima, et al. “Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study.” <i>Langmuir</i>, vol. 18, no. 13, American Chemical Society (ACS), 2002, pp. 5027–30, doi:<a href=\"https://doi.org/10.1021/la0201725\">10.1021/la0201725</a>."},"quality_controlled":"1","language":[{"iso":"eng"}],"doi":"10.1021/la0201725","year":"2002","title":"Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study","author":[{"last_name":"Stubenrauch","first_name":"Cosima","full_name":"Stubenrauch, Cosima"},{"full_name":"Frank, Christian","last_name":"Frank","first_name":"Christian"},{"full_name":"Strey, Reinhard","first_name":"Reinhard","last_name":"Strey"},{"full_name":"Burgemeister, Daniel","last_name":"Burgemeister","first_name":"Daniel"},{"id":"466","first_name":"Claudia","orcid":"0000-0003-3179-9997","last_name":"Schmidt","full_name":"Schmidt, Claudia"}],"publication_identifier":{"issn":["0743-7463","1520-5827"]},"publication_status":"published","date_updated":"2023-01-07T11:20:32Z","article_type":"original","intvolume":"        18","date_created":"2023-01-06T13:16:24Z","keyword":["Electrochemistry","Spectroscopy","Surfaces and Interfaces","Condensed Matter Physics","General Materials Science"],"type":"journal_article","department":[{"_id":"2"},{"_id":"315"}],"publication":"Langmuir","issue":"13"},{"publication":"Liquid Crystals","issue":"7","date_created":"2023-01-25T13:31:31Z","department":[{"_id":"313"},{"_id":"638"}],"keyword":["Condensed Matter Physics","General Materials Science","General Chemistry"],"type":"journal_article","author":[{"first_name":"S.","last_name":"Benning","full_name":"Benning, S."},{"id":"254","last_name":"Kitzerow","first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried"},{"last_name":"Bock","first_name":"H.","full_name":"Bock, H."},{"first_name":"M.-F.","last_name":"Achard","full_name":"Achard, M.-F."}],"publication_identifier":{"issn":["0267-8292","1366-5855"]},"title":"Fluorescent columnar liquid crystalline 3,4,9,10-tetra-(n-alkoxycarbonyl)-perylenes","year":"2002","intvolume":"        27","publication_status":"published","date_updated":"2023-01-25T16:07:43Z","language":[{"iso":"eng"}],"doi":"10.1080/02678290050043842","citation":{"ama":"Benning S, Kitzerow H-S, Bock H, Achard M-F. Fluorescent columnar liquid crystalline 3,4,9,10-tetra-(n-alkoxycarbonyl)-perylenes. <i>Liquid Crystals</i>. 2002;27(7):901-906. doi:<a href=\"https://doi.org/10.1080/02678290050043842\">10.1080/02678290050043842</a>","bibtex":"@article{Benning_Kitzerow_Bock_Achard_2002, title={Fluorescent columnar liquid crystalline 3,4,9,10-tetra-(n-alkoxycarbonyl)-perylenes}, volume={27}, DOI={<a href=\"https://doi.org/10.1080/02678290050043842\">10.1080/02678290050043842</a>}, number={7}, journal={Liquid Crystals}, publisher={Informa UK Limited}, author={Benning, S. and Kitzerow, Heinz-Siegfried and Bock, H. and Achard, M.-F.}, year={2002}, pages={901–906} }","mla":"Benning, S., et al. “Fluorescent Columnar Liquid Crystalline 3,4,9,10-Tetra-(n-Alkoxycarbonyl)-Perylenes.” <i>Liquid Crystals</i>, vol. 27, no. 7, Informa UK Limited, 2002, pp. 901–06, doi:<a href=\"https://doi.org/10.1080/02678290050043842\">10.1080/02678290050043842</a>.","chicago":"Benning, S., Heinz-Siegfried Kitzerow, H. Bock, and M.-F. Achard. “Fluorescent Columnar Liquid Crystalline 3,4,9,10-Tetra-(n-Alkoxycarbonyl)-Perylenes.” <i>Liquid Crystals</i> 27, no. 7 (2002): 901–6. <a href=\"https://doi.org/10.1080/02678290050043842\">https://doi.org/10.1080/02678290050043842</a>.","short":"S. Benning, H.-S. Kitzerow, H. Bock, M.-F. Achard, Liquid Crystals 27 (2002) 901–906.","apa":"Benning, S., Kitzerow, H.-S., Bock, H., &#38; Achard, M.-F. (2002). Fluorescent columnar liquid crystalline 3,4,9,10-tetra-(n-alkoxycarbonyl)-perylenes. <i>Liquid Crystals</i>, <i>27</i>(7), 901–906. <a href=\"https://doi.org/10.1080/02678290050043842\">https://doi.org/10.1080/02678290050043842</a>","ieee":"S. Benning, H.-S. Kitzerow, H. Bock, and M.-F. Achard, “Fluorescent columnar liquid crystalline 3,4,9,10-tetra-(n-alkoxycarbonyl)-perylenes,” <i>Liquid Crystals</i>, vol. 27, no. 7, pp. 901–906, 2002, doi: <a href=\"https://doi.org/10.1080/02678290050043842\">10.1080/02678290050043842</a>."},"status":"public","_id":"39997","publisher":"Informa UK Limited","page":"901-906","volume":27,"user_id":"254"},{"intvolume":"        28","date_updated":"2023-01-25T16:08:06Z","publication_status":"published","publication_identifier":{"issn":["0267-8292","1366-5855"]},"author":[{"full_name":"Keuker-Baumann, Susanne","last_name":"Keuker-Baumann","first_name":"Susanne"},{"first_name":"Harald","last_name":"Bock","full_name":"Bock, Harald"},{"full_name":"Sala, Fabio Della","last_name":"Sala","first_name":"Fabio Della"},{"last_name":"Benning","first_name":"Stephan A.","full_name":"Benning, Stephan A."},{"last_name":"Haßheider","first_name":"Thomas","full_name":"Haßheider, Thomas"},{"full_name":"Frauenheim, Thomas","first_name":"Thomas","last_name":"Frauenheim"},{"id":"254","full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried","last_name":"Kitzerow"}],"year":"2002","title":"Absorption and luminescence spectra of electroluminescent liquid crystals with triphenylene, pyrene and perylene units","doi":"10.1080/02678290110048732","language":[{"iso":"eng"}],"issue":"7","publication":"Liquid Crystals","department":[{"_id":"313"},{"_id":"638"}],"type":"journal_article","keyword":["Condensed Matter Physics","General Materials Science","General Chemistry"],"date_created":"2023-01-25T13:29:24Z","status":"public","volume":28,"user_id":"254","publisher":"Informa UK Limited","_id":"39996","page":"1105-1113","citation":{"apa":"Keuker-Baumann, S., Bock, H., Sala, F. D., Benning, S. A., Haßheider, T., Frauenheim, T., &#38; Kitzerow, H.-S. (2002). Absorption and luminescence spectra of electroluminescent liquid crystals with triphenylene, pyrene and perylene units. <i>Liquid Crystals</i>, <i>28</i>(7), 1105–1113. <a href=\"https://doi.org/10.1080/02678290110048732\">https://doi.org/10.1080/02678290110048732</a>","ieee":"S. Keuker-Baumann <i>et al.</i>, “Absorption and luminescence spectra of electroluminescent liquid crystals with triphenylene, pyrene and perylene units,” <i>Liquid Crystals</i>, vol. 28, no. 7, pp. 1105–1113, 2002, doi: <a href=\"https://doi.org/10.1080/02678290110048732\">10.1080/02678290110048732</a>.","short":"S. Keuker-Baumann, H. Bock, F.D. Sala, S.A. Benning, T. Haßheider, T. Frauenheim, H.-S. Kitzerow, Liquid Crystals 28 (2002) 1105–1113.","chicago":"Keuker-Baumann, Susanne, Harald Bock, Fabio Della Sala, Stephan A. Benning, Thomas Haßheider, Thomas Frauenheim, and Heinz-Siegfried Kitzerow. “Absorption and Luminescence Spectra of Electroluminescent Liquid Crystals with Triphenylene, Pyrene and Perylene Units.” <i>Liquid Crystals</i> 28, no. 7 (2002): 1105–13. <a href=\"https://doi.org/10.1080/02678290110048732\">https://doi.org/10.1080/02678290110048732</a>.","mla":"Keuker-Baumann, Susanne, et al. “Absorption and Luminescence Spectra of Electroluminescent Liquid Crystals with Triphenylene, Pyrene and Perylene Units.” <i>Liquid Crystals</i>, vol. 28, no. 7, Informa UK Limited, 2002, pp. 1105–13, doi:<a href=\"https://doi.org/10.1080/02678290110048732\">10.1080/02678290110048732</a>.","ama":"Keuker-Baumann S, Bock H, Sala FD, et al. Absorption and luminescence spectra of electroluminescent liquid crystals with triphenylene, pyrene and perylene units. <i>Liquid Crystals</i>. 2002;28(7):1105-1113. doi:<a href=\"https://doi.org/10.1080/02678290110048732\">10.1080/02678290110048732</a>","bibtex":"@article{Keuker-Baumann_Bock_Sala_Benning_Haßheider_Frauenheim_Kitzerow_2002, title={Absorption and luminescence spectra of electroluminescent liquid crystals with triphenylene, pyrene and perylene units}, volume={28}, DOI={<a href=\"https://doi.org/10.1080/02678290110048732\">10.1080/02678290110048732</a>}, number={7}, journal={Liquid Crystals}, publisher={Informa UK Limited}, author={Keuker-Baumann, Susanne and Bock, Harald and Sala, Fabio Della and Benning, Stephan A. and Haßheider, Thomas and Frauenheim, Thomas and Kitzerow, Heinz-Siegfried}, year={2002}, pages={1105–1113} }"}},{"citation":{"bibtex":"@article{Katzenstein_Huber_2002, title={Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates}, volume={18}, DOI={<a href=\"https://doi.org/10.1021/la020143u\">10.1021/la020143u</a>}, number={18}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Katzenstein, Armin and Huber, Klaus}, year={2002}, pages={7049–7056} }","ama":"Katzenstein A, Huber K. Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates. <i>Langmuir</i>. 2002;18(18):7049-7056. doi:<a href=\"https://doi.org/10.1021/la020143u\">10.1021/la020143u</a>","mla":"Katzenstein, Armin, and Klaus Huber. “Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates.” <i>Langmuir</i>, vol. 18, no. 18, American Chemical Society (ACS), 2002, pp. 7049–56, doi:<a href=\"https://doi.org/10.1021/la020143u\">10.1021/la020143u</a>.","short":"A. Katzenstein, K. Huber, Langmuir 18 (2002) 7049–7056.","chicago":"Katzenstein, Armin, and Klaus Huber. “Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates.” <i>Langmuir</i> 18, no. 18 (2002): 7049–56. <a href=\"https://doi.org/10.1021/la020143u\">https://doi.org/10.1021/la020143u</a>.","ieee":"A. Katzenstein and K. Huber, “Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates,” <i>Langmuir</i>, vol. 18, no. 18, pp. 7049–7056, 2002, doi: <a href=\"https://doi.org/10.1021/la020143u\">10.1021/la020143u</a>.","apa":"Katzenstein, A., &#38; Huber, K. (2002). Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates. <i>Langmuir</i>, <i>18</i>(18), 7049–7056. <a href=\"https://doi.org/10.1021/la020143u\">https://doi.org/10.1021/la020143u</a>"},"volume":18,"user_id":"237","_id":"42052","publisher":"American Chemical Society (ACS)","page":"7049-7056","status":"public","department":[{"_id":"314"}],"keyword":["Electrochemistry","Spectroscopy","Surfaces and Interfaces","Condensed Matter Physics","General Materials Science"],"type":"journal_article","date_created":"2023-02-13T13:04:11Z","publication":"Langmuir","issue":"18","doi":"10.1021/la020143u","language":[{"iso":"eng"}],"intvolume":"        18","date_updated":"2023-02-13T13:04:43Z","publication_status":"published","publication_identifier":{"issn":["0743-7463","1520-5827"]},"author":[{"full_name":"Katzenstein, Armin","first_name":"Armin","last_name":"Katzenstein"},{"id":"237","last_name":"Huber","first_name":"Klaus","full_name":"Huber, Klaus"}],"year":"2002","title":"Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates"},{"publication_identifier":{"issn":["0167-9317"]},"author":[{"first_name":"I.","last_name":"Schönstein","full_name":"Schönstein, I."},{"full_name":"Müller, J.","last_name":"Müller","first_name":"J."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"full_name":"Goser, K.","first_name":"K.","last_name":"Goser"}],"year":"2002","title":"Characterization of submicron NMOS devices due to visible light emission","intvolume":"        21","date_updated":"2023-03-21T09:50:03Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(93)90092-j","publication":"Microelectronic Engineering","issue":"1-4","date_created":"2023-01-25T09:26:21Z","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"status":"public","publisher":"Elsevier BV","_id":"39912","page":"363-366","volume":21,"user_id":"20179","citation":{"apa":"Schönstein, I., Müller, J., Hilleringmann, U., &#38; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>, <i>21</i>(1–4), 363–366. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>","ieee":"I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, pp. 363–366, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","chicago":"Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i> 21, no. 1–4 (2002): 363–66. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>.","short":"I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366.","mla":"Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","ama":"Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>. 2002;21(1-4):363-366. doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>","bibtex":"@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }"}},{"language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(92)90425-q","publication_identifier":{"issn":["0167-9317"]},"author":[{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"full_name":"Goser, K.","first_name":"K.","last_name":"Goser"}],"year":"2002","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","intvolume":"        19","publication_status":"published","date_updated":"2023-03-21T09:49:25Z","date_created":"2023-01-25T09:27:23Z","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","issue":"1-4","publication":"Microelectronic Engineering","_id":"39914","publisher":"Elsevier BV","page":"211-214","volume":19,"user_id":"20179","status":"public","citation":{"ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>"}},{"citation":{"mla":"Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }","ama":"Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>. 2002;30(1-4):431-434. doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>."},"status":"public","volume":30,"user_id":"20179","publisher":"Elsevier BV","_id":"39899","page":"431-434","publication":"Microelectronic Engineering","issue":"1-4","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"date_created":"2023-01-25T09:20:20Z","intvolume":"        30","date_updated":"2023-03-21T09:53:55Z","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"author":[{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."},{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"},{"last_name":"Goser","first_name":"K.","full_name":"Goser, K."}],"year":"2002","title":"Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique","doi":"10.1016/0167-9317(95)00280-4","language":[{"iso":"eng"}]},{"user_id":"20179","volume":53,"page":"525-528","_id":"39882","publisher":"Elsevier BV","status":"public","citation":{"ama":"Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>. 2002;53(1-4):525-528. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={525–528} }","mla":"Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528.","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>.","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>."},"doi":"10.1016/s0167-9317(00)00370-1","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2023-03-21T10:00:06Z","intvolume":"        53","title":"A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV","year":"2002","publication_identifier":{"issn":["0167-9317"]},"author":[{"first_name":"V.","last_name":"Mankowski","full_name":"Mankowski, V."},{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"},{"full_name":"Schumacher, K.","first_name":"K.","last_name":"Schumacher"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"date_created":"2023-01-25T09:10:13Z","issue":"1-4","publication":"Microelectronic Engineering"},{"author":[{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"publication_identifier":{"issn":["0167-9317"]},"year":"2002","title":"1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","intvolume":"        53","date_updated":"2023-03-21T10:02:46Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/s0167-9317(00)00299-9","publication":"Microelectronic Engineering","issue":"1-4","date_created":"2023-01-25T09:08:36Z","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"status":"public","publisher":"Elsevier BV","_id":"39879","page":"213-216","volume":53,"user_id":"20179","citation":{"ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.","mla":"Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }","ama":"Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>. 2002;53(1-4):213-216. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>"}},{"language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(91)90231-2","author":[{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"},{"last_name":"Knospe","first_name":"K.","full_name":"Knospe, K."},{"last_name":"Heite","first_name":"C.","full_name":"Heite, C."},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."},{"last_name":"Goser","first_name":"K.","full_name":"Goser, K."}],"publication_identifier":{"issn":["0167-9317"]},"title":"A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits","year":"2002","intvolume":"        15","publication_status":"published","date_updated":"2023-03-22T10:29:08Z","date_created":"2023-01-25T09:29:32Z","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"publication":"Microelectronic Engineering","issue":"1-4","_id":"39919","publisher":"Elsevier BV","page":"289-292","volume":15,"user_id":"20179","status":"public","citation":{"apa":"Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>","mla":"Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","ieee":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","ama":"Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>. 2002;15(1-4):289-292. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>","short":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292.","chicago":"Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>.","bibtex":"@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}, year={2002}, pages={289–292} }"}},{"citation":{"short":"A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.","chicago":"Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>.","ieee":"A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","apa":"Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>","bibtex":"@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }","ama":"Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>. 2002;15(1-4):633-636. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>","mla":"Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>."},"volume":15,"user_id":"20179","publisher":"Elsevier BV","_id":"39920","page":"633-636","status":"public","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"date_created":"2023-01-25T09:29:53Z","issue":"1-4","publication":"Microelectronic Engineering","doi":"10.1016/0167-9317(91)90299-s","language":[{"iso":"eng"}],"intvolume":"        15","publication_status":"published","date_updated":"2023-03-21T09:47:17Z","author":[{"first_name":"A.","last_name":"Soennecken","full_name":"Soennecken, A."},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"publication_identifier":{"issn":["0167-9317"]},"title":"Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica","year":"2002"},{"status":"public","user_id":"20179","volume":19,"page":"211-214","publisher":"Elsevier BV","_id":"39915","citation":{"apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }"},"publication_status":"published","date_updated":"2023-03-21T09:49:09Z","intvolume":"        19","year":"2002","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","publication_identifier":{"issn":["0167-9317"]},"author":[{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"doi":"10.1016/0167-9317(92)90425-q","language":[{"iso":"eng"}],"publication":"Microelectronic Engineering","issue":"1-4","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"date_created":"2023-01-25T09:27:51Z"},{"citation":{"ama":"Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>","bibtex":"@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }","mla":"Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","chicago":"Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 191–94. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>.","short":"S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.","apa":"Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 191–194. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>","ieee":"S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 191–194, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>."},"status":"public","user_id":"20179","volume":19,"page":"191-194","_id":"39916","publisher":"Elsevier BV","publication":"Microelectronic Engineering","issue":"1-4","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"date_created":"2023-01-25T09:28:16Z","date_updated":"2023-03-21T09:48:55Z","publication_status":"published","intvolume":"        19","title":"CMOS compatible micromachining by dry silicon-etching techniques","year":"2002","author":[{"full_name":"Adams, S.","first_name":"S.","last_name":"Adams"},{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"},{"last_name":"Goser","first_name":"K.","full_name":"Goser, K."}],"publication_identifier":{"issn":["0167-9317"]},"doi":"10.1016/0167-9317(92)90420-v","language":[{"iso":"eng"}]},{"issue":"1-4","publication":"Microelectronic Engineering","date_created":"2023-01-25T09:13:17Z","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","author":[{"first_name":"V.","last_name":"Mankowski","full_name":"Mankowski, V."},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"},{"last_name":"Schumacher","first_name":"K.","full_name":"Schumacher, K."}],"publication_identifier":{"issn":["0167-9317"]},"year":"2002","title":"12 kV low current cascaded light triggered switch on one silicon chip","intvolume":"        46","publication_status":"published","date_updated":"2023-03-21T09:58:35Z","language":[{"iso":"eng"}],"doi":"10.1016/s0167-9317(99)00122-7","citation":{"mla":"Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier BV, 2002, pp. 413–17, doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={413–417} }","ama":"Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417. doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>, <i>46</i>(1–4), 413–417. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i> 46, no. 1–4 (2002): 413–17. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>."},"status":"public","_id":"39889","publisher":"Elsevier BV","page":"413-417","volume":46,"user_id":"20179"},{"volume":43,"user_id":"20179","_id":"39886","publisher":"Elsevier BV","page":"1245-1250","status":"public","citation":{"short":"G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250.","chicago":"Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i> 43, no. 7 (2002): 1245–50. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.","ieee":"G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol. 43, no. 7, pp. 1245–1250, 2002, doi: <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","apa":"Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>, <i>43</i>(7), 1245–1250. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>","bibtex":"@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>}, number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250} }","ama":"Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250. doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>","mla":"Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50, doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>."},"doi":"10.1016/s0038-1101(99)00060-x","language":[{"iso":"eng"}],"intvolume":"        43","publication_status":"published","date_updated":"2023-03-21T09:59:22Z","author":[{"first_name":"G","last_name":"Wirth","full_name":"Wirth, G"},{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"},{"last_name":"Horstmann","first_name":"J.T","full_name":"Horstmann, J.T"},{"first_name":"K","last_name":"Goser","full_name":"Goser, K"}],"publication_identifier":{"issn":["0038-1101"]},"year":"2002","title":"Mesoscopic transport phenomena in ultrashort channel MOSFETs","department":[{"_id":"59"}],"keyword":["Materials Chemistry","Electrical and Electronic Engineering","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","date_created":"2023-01-25T09:11:50Z","issue":"7","publication":"Solid-State Electronics"},{"status":"public","volume":53,"user_id":"20179","_id":"39877","publisher":"Elsevier BV","page":"569-572","citation":{"chicago":"Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 569–72. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.","short":"U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.","apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 569–572. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>","ieee":"U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","ama":"Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>. 2002;53(1-4):569-572. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>","bibtex":"@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }","mla":"Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>."},"intvolume":"        53","publication_status":"published","date_updated":"2023-03-21T10:03:00Z","author":[{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"},{"last_name":"Vieregge","first_name":"T.","full_name":"Vieregge, T."},{"full_name":"Horstmann, J.T.","first_name":"J.T.","last_name":"Horstmann"}],"publication_identifier":{"issn":["0167-9317"]},"year":"2002","title":"A structure definition technique for 25 nm lines of silicon and related materials","doi":"10.1016/s0167-9317(00)00380-4","language":[{"iso":"eng"}],"publication":"Microelectronic Engineering","issue":"1-4","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"date_created":"2023-01-25T09:08:13Z"},{"keyword":["Computer Science Applications","Mechanics of Materials","Condensed Matter Physics","General Materials Science","Modeling and Simulation"],"type":"journal_article","department":[{"_id":"9"},{"_id":"154"}],"date_created":"2023-05-31T12:28:01Z","publication":"Modelling and Simulation in Materials Science and Engineering","issue":"3A","doi":"10.1088/0965-0393/2/3a/013","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2023-05-31T12:28:27Z","intvolume":"         2","year":"2002","title":"The identification of parameters for visco-plastic models via finite-element methods and gradient methods","publication_identifier":{"issn":["0965-0393","1361-651X"]},"author":[{"last_name":"Mahnken","first_name":"Rolf","full_name":"Mahnken, Rolf","id":"335"},{"first_name":"E","last_name":"Stein","full_name":"Stein, E"}],"quality_controlled":"1","citation":{"mla":"Mahnken, Rolf, and E. Stein. “The Identification of Parameters for Visco-Plastic Models via Finite-Element Methods and Gradient Methods.” <i>Modelling and Simulation in Materials Science and Engineering</i>, vol. 2, no. 3A, IOP Publishing, 2002, pp. 597–616, doi:<a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">10.1088/0965-0393/2/3a/013</a>.","bibtex":"@article{Mahnken_Stein_2002, title={The identification of parameters for visco-plastic models via finite-element methods and gradient methods}, volume={2}, DOI={<a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">10.1088/0965-0393/2/3a/013</a>}, number={3A}, journal={Modelling and Simulation in Materials Science and Engineering}, publisher={IOP Publishing}, author={Mahnken, Rolf and Stein, E}, year={2002}, pages={597–616} }","ama":"Mahnken R, Stein E. The identification of parameters for visco-plastic models via finite-element methods and gradient methods. <i>Modelling and Simulation in Materials Science and Engineering</i>. 2002;2(3A):597-616. doi:<a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">10.1088/0965-0393/2/3a/013</a>","ieee":"R. Mahnken and E. Stein, “The identification of parameters for visco-plastic models via finite-element methods and gradient methods,” <i>Modelling and Simulation in Materials Science and Engineering</i>, vol. 2, no. 3A, pp. 597–616, 2002, doi: <a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">10.1088/0965-0393/2/3a/013</a>.","apa":"Mahnken, R., &#38; Stein, E. (2002). The identification of parameters for visco-plastic models via finite-element methods and gradient methods. <i>Modelling and Simulation in Materials Science and Engineering</i>, <i>2</i>(3A), 597–616. <a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">https://doi.org/10.1088/0965-0393/2/3a/013</a>","short":"R. Mahnken, E. Stein, Modelling and Simulation in Materials Science and Engineering 2 (2002) 597–616.","chicago":"Mahnken, Rolf, and E Stein. “The Identification of Parameters for Visco-Plastic Models via Finite-Element Methods and Gradient Methods.” <i>Modelling and Simulation in Materials Science and Engineering</i> 2, no. 3A (2002): 597–616. <a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">https://doi.org/10.1088/0965-0393/2/3a/013</a>."},"user_id":"335","volume":2,"page":"597-616","_id":"45432","publisher":"IOP Publishing","status":"public"}]