@article{4244,
  abstract     = {{In this work we study the resonant and coherent properties of single InP-based InAs quantum dots, which show an optical emission in the telecom C-band and L-band. High-resolution resonant photocurrent spectroscopy on p–i–n devices reveals narrow linewidths and fully resolved fine structure splittings. We observe Lorentzian line shapes, which allow for the extraction of dephasing times as a function of the applied bias voltage. Coherent ps laser excitation results in pronounced Rabi rotations with increasing pulse area. For π-pulse excitation, we obtain more than 93 % of the theoretically expected photocurrent amplitude. Our results also demonstrate that such state-of-the-art InP-based quantum dots for the telecom band exhibit promising key parameters comparable to well-established InAs/GaAs counterparts.}},
  author       = {{Gordon, S. and Yacob, M. and Reithmaier, J. P. and Benyoucef, M. and Zrenner, Artur}},
  issn         = {{0946-2171}},
  journal      = {{Applied Physics B}},
  keywords     = {{Bias Voltage, Optical Parametric Oscillator, Molecular Beam Epitaxy Growth, Internal Electric Field, Dephasing Time}},
  number       = {{2}},
  publisher    = {{Springer Nature}},
  title        = {{{Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom band at 1.5 µm}}},
  doi          = {{10.1007/s00340-015-6279-6}},
  volume       = {{122}},
  year         = {{2016}},
}