--- _id: '4378' abstract: - lang: eng text: Using a combined all-ultra-high-vacuum process employing lateral patterning with focused ion beams and molecular beam epitaxy, site-selective growth of single (In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally positioned quantum dots in the intrinsic region of a p-i-n junction so that the quantum dots can be driven electrically. In this contribution, we will present our results on the morphological properties of the ion-beam modified surface on which the quantum dot nucleation occurs together with a characterization of the electrical and optoelectronic properties. We will demonstrate that a single, individual quantum dot can directly be electrically addressed. article_type: original author: - first_name: Minisha full_name: Mehta, Minisha last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Steffen full_name: Michaelis de Vasconcellos, Steffen last_name: Michaelis de Vasconcellos - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. Electrically driven intentionally positioned single quantum dot. physica status solidi (c). 2011;8(4):1182-1185. doi:10.1002/pssc.201000828 apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2011). Electrically driven intentionally positioned single quantum dot. Physica Status Solidi (C), 8(4), 1182–1185. https://doi.org/10.1002/pssc.201000828 bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2011, title={Electrically driven intentionally positioned single quantum dot}, volume={8}, DOI={10.1002/pssc.201000828}, number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mehta, Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Zrenner, Artur and Meier, Cedrik}, year={2011}, pages={1182–1185} }' chicago: 'Mehta, Minisha, Dirk Reuter, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “Electrically Driven Intentionally Positioned Single Quantum Dot.” Physica Status Solidi (C) 8, no. 4 (2011): 1182–85. https://doi.org/10.1002/pssc.201000828.' ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “Electrically driven intentionally positioned single quantum dot,” physica status solidi (c), vol. 8, no. 4, pp. 1182–1185, 2011. mla: Mehta, Minisha, et al. “Electrically Driven Intentionally Positioned Single Quantum Dot.” Physica Status Solidi (C), vol. 8, no. 4, Wiley, 2011, pp. 1182–85, doi:10.1002/pssc.201000828. short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Physica Status Solidi (C) 8 (2011) 1182–1185. date_created: 2018-09-11T14:15:28Z date_updated: 2022-01-06T07:01:00Z department: - _id: '15' - _id: '230' - _id: '35' - _id: '287' doi: 10.1002/pssc.201000828 intvolume: ' 8' issue: '4' keyword: - molecular beam epitaxy - quantum dot - site control - electroluminescence language: - iso: eng page: 1182-1185 publication: physica status solidi (c) publication_identifier: issn: - 1862-6351 publication_status: published publisher: Wiley status: public title: Electrically driven intentionally positioned single quantum dot type: journal_article user_id: '20798' volume: 8 year: '2011' ... --- _id: '4551' abstract: - lang: eng text: An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs. article_type: original author: - first_name: Minisha full_name: Mehta, Minisha last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Alexander full_name: Melnikov, Alexander last_name: Melnikov - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Steffen full_name: Michaelis de Vasconcellos, Steffen last_name: Michaelis de Vasconcellos - first_name: Tim full_name: Baumgarten, Tim last_name: Baumgarten - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: 'Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E: Low-dimensional Systems and Nanostructures. 2010;42(10):2749-2752. doi:10.1016/j.physe.2009.12.053' apa: 'Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos, S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E: Low-Dimensional Systems and Nanostructures, 42(10), 2749–2752. https://doi.org/10.1016/j.physe.2009.12.053' bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010, title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}, volume={42}, DOI={10.1016/j.physe.2009.12.053}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }' chicago: 'Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” Physica E: Low-Dimensional Systems and Nanostructures 42, no. 10 (2010): 2749–52. https://doi.org/10.1016/j.physe.2009.12.053.' ieee: 'M. Mehta et al., “Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode,” Physica E: Low-dimensional Systems and Nanostructures, vol. 42, no. 10, pp. 2749–2752, 2010.' mla: 'Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” Physica E: Low-Dimensional Systems and Nanostructures, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52, doi:10.1016/j.physe.2009.12.053.' short: 'M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos, T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2749–2752.' date_created: 2018-09-20T12:42:40Z date_updated: 2022-01-06T07:01:09Z department: - _id: '15' - _id: '230' - _id: '35' - _id: '287' doi: 10.1016/j.physe.2009.12.053 intvolume: ' 42' issue: '10' keyword: - Molecular beam epitaxy - Focused ion beam - Self-assembled quantum dot - Electroluminescence language: - iso: eng page: 2749-2752 publication: 'Physica E: Low-dimensional Systems and Nanostructures' publication_identifier: issn: - 1386-9477 publication_status: published publisher: Elsevier BV status: public title: Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode type: journal_article user_id: '20798' volume: 42 year: '2010' ...