---
_id: '4378'
abstract:
- lang: eng
text: Using a combined all-ultra-high-vacuum process employing lateral patterning
with focused ion beams and molecular beam epitaxy, site-selective growth of single
(In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally
positioned quantum dots in the intrinsic region of a p-i-n junction so that the
quantum dots can be driven electrically. In this contribution, we will present
our results on the morphological properties of the ion-beam modified surface on
which the quantum dot nucleation occurs together with a characterization of the
electrical and optoelectronic properties. We will demonstrate that a single, individual
quantum dot can directly be electrically addressed.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. Electrically driven intentionally positioned single quantum dot. physica
status solidi (c). 2011;8(4):1182-1185. doi:10.1002/pssc.201000828
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2011). Electrically driven intentionally positioned single
quantum dot. Physica Status Solidi (C), 8(4), 1182–1185. https://doi.org/10.1002/pssc.201000828
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2011,
title={Electrically driven intentionally positioned single quantum dot}, volume={8},
DOI={10.1002/pssc.201000828},
number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mehta,
Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos,
Steffen and Zrenner, Artur and Meier, Cedrik}, year={2011}, pages={1182–1185}
}'
chicago: 'Mehta, Minisha, Dirk Reuter, Andreas D. Wieck, Steffen Michaelis de Vasconcellos,
Artur Zrenner, and Cedrik Meier. “Electrically Driven Intentionally Positioned
Single Quantum Dot.” Physica Status Solidi (C) 8, no. 4 (2011): 1182–85.
https://doi.org/10.1002/pssc.201000828.'
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “Electrically driven intentionally positioned single quantum dot,”
physica status solidi (c), vol. 8, no. 4, pp. 1182–1185, 2011.
mla: Mehta, Minisha, et al. “Electrically Driven Intentionally Positioned Single
Quantum Dot.” Physica Status Solidi (C), vol. 8, no. 4, Wiley, 2011, pp.
1182–85, doi:10.1002/pssc.201000828.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Physica Status Solidi (C) 8 (2011) 1182–1185.
date_created: 2018-09-11T14:15:28Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1002/pssc.201000828
intvolume: ' 8'
issue: '4'
keyword:
- molecular beam epitaxy
- quantum dot
- site control
- electroluminescence
language:
- iso: eng
page: 1182-1185
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Electrically driven intentionally positioned single quantum dot
type: journal_article
user_id: '20798'
volume: 8
year: '2011'
...
---
_id: '4551'
abstract:
- lang: eng
text: An intentional positioning of optically active quantum dots using site-selective
growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB)
implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated.
A square array of periodic holes on GaAs substrate was fabricated with FIB of
30 keV ions followed by an in situ annealing step. Subsequently, the patterned
holes were overgrown with an optimized amount of InAs in order to achieve site-selective
growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity
of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter,
carrier injection and subsequent radiative recombination from the positioned InAs/GaAs
self-assembled QDs was investigated by embedding the QDs in the intrinsic part
of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77
K show interband transitions up to the fifth excited state from the QDs.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Alexander
full_name: Melnikov, Alexander
last_name: Melnikov
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Tim
full_name: Baumgarten, Tim
last_name: Baumgarten
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: 'Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-dimensional Systems and Nanostructures. 2010;42(10):2749-2752. doi:10.1016/j.physe.2009.12.053'
apa: 'Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos,
S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-Dimensional Systems and Nanostructures, 42(10), 2749–2752. https://doi.org/10.1016/j.physe.2009.12.053'
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010,
title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode}, volume={42}, DOI={10.1016/j.physe.2009.12.053},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov,
Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten,
Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }'
chicago: 'Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen
Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally
Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction
Diode.” Physica E: Low-Dimensional Systems and Nanostructures 42, no. 10
(2010): 2749–52. https://doi.org/10.1016/j.physe.2009.12.053.'
ieee: 'M. Mehta et al., “Intentionally positioned self-assembled InAs quantum
dots in an electroluminescent p–i–n junction diode,” Physica E: Low-dimensional
Systems and Nanostructures, vol. 42, no. 10, pp. 2749–2752, 2010.'
mla: 'Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum
Dots in an Electroluminescent p–i–n Junction Diode.” Physica E: Low-Dimensional
Systems and Nanostructures, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52,
doi:10.1016/j.physe.2009.12.053.'
short: 'M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos,
T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures
42 (2010) 2749–2752.'
date_created: 2018-09-20T12:42:40Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1016/j.physe.2009.12.053
intvolume: ' 42'
issue: '10'
keyword:
- Molecular beam epitaxy
- Focused ion beam
- Self-assembled quantum dot
- Electroluminescence
language:
- iso: eng
page: 2749-2752
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode
type: journal_article
user_id: '20798'
volume: 42
year: '2010'
...