@article{39914, author = {{Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{211--214}}, publisher = {{Elsevier BV}}, title = {{{Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}}}, doi = {{10.1016/0167-9317(92)90425-q}}, volume = {{19}}, year = {{2002}}, } @article{39906, author = {{Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}}, issn = {{0018-9200}}, journal = {{IEEE Journal of Solid-State Circuits}}, keywords = {{Electrical and Electronic Engineering}}, number = {{8}}, pages = {{1006--1010}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{System integration of optical devices and analog CMOS amplifiers}}}, doi = {{10.1109/4.297714}}, volume = {{29}}, year = {{2002}}, } @article{39907, author = {{Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}}, issn = {{0018-9200}}, journal = {{IEEE Journal of Solid-State Circuits}}, keywords = {{Electrical and Electronic Engineering}}, number = {{8}}, pages = {{1006--1010}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{System integration of optical devices and analog CMOS amplifiers}}}, doi = {{10.1109/4.297714}}, volume = {{29}}, year = {{2002}}, } @article{39899, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{431--434}}, publisher = {{Elsevier BV}}, title = {{{Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}}}, doi = {{10.1016/0167-9317(95)00280-4}}, volume = {{30}}, year = {{2002}}, } @article{39925, author = {{Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}}, issn = {{0272-1732}}, journal = {{IEEE Micro}}, keywords = {{Electrical and Electronic Engineering, Hardware and Architecture, Software}}, number = {{6}}, pages = {{28--44}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{VLSI technologies for artificial neural networks}}}, doi = {{10.1109/40.42985}}, volume = {{9}}, year = {{2002}}, } @article{39882, author = {{Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{525--528}}, publisher = {{Elsevier BV}}, title = {{{A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}}}, doi = {{10.1016/s0167-9317(00)00370-1}}, volume = {{53}}, year = {{2002}}, } @article{39879, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{213--216}}, publisher = {{Elsevier BV}}, title = {{{1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}}}, doi = {{10.1016/s0167-9317(00)00299-9}}, volume = {{53}}, year = {{2002}}, } @article{39919, author = {{Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{289--292}}, publisher = {{Elsevier BV}}, title = {{{A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}}}, doi = {{10.1016/0167-9317(91)90231-2}}, volume = {{15}}, year = {{2002}}, } @article{39926, author = {{Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}}, issn = {{0272-1732}}, journal = {{IEEE Micro}}, keywords = {{Electrical and Electronic Engineering, Hardware and Architecture, Software}}, number = {{6}}, pages = {{28--44}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{VLSI technologies for artificial neural networks}}}, doi = {{10.1109/40.42985}}, volume = {{9}}, year = {{2002}}, } @article{39920, author = {{Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{633--636}}, publisher = {{Elsevier BV}}, title = {{{Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}}}, doi = {{10.1016/0167-9317(91)90299-s}}, volume = {{15}}, year = {{2002}}, } @article{39915, author = {{Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{211--214}}, publisher = {{Elsevier BV}}, title = {{{Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}}}, doi = {{10.1016/0167-9317(92)90425-q}}, volume = {{19}}, year = {{2002}}, } @article{39916, author = {{Adams, S. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{191--194}}, publisher = {{Elsevier BV}}, title = {{{CMOS compatible micromachining by dry silicon-etching techniques}}}, doi = {{10.1016/0167-9317(92)90420-v}}, volume = {{19}}, year = {{2002}}, } @article{39348, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}}, issn = {{0018-9383}}, journal = {{IEEE Transactions on Electron Devices}}, keywords = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}}, number = {{1}}, pages = {{299--306}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Matching analysis of deposition defined 50-nm MOSFET's}}}, doi = {{10.1109/16.658845}}, volume = {{45}}, year = {{2002}}, } @article{39889, author = {{Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{413--417}}, publisher = {{Elsevier BV}}, title = {{{12 kV low current cascaded light triggered switch on one silicon chip}}}, doi = {{10.1016/s0167-9317(99)00122-7}}, volume = {{46}}, year = {{2002}}, } @article{39891, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}}, issn = {{0018-9383}}, journal = {{IEEE Transactions on Electron Devices}}, keywords = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}}, number = {{1}}, pages = {{299--306}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Matching analysis of deposition defined 50-nm MOSFET's}}}, doi = {{10.1109/16.658845}}, volume = {{45}}, year = {{2002}}, } @article{39886, author = {{Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}}, issn = {{0038-1101}}, journal = {{Solid-State Electronics}}, keywords = {{Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials}}, number = {{7}}, pages = {{1245--1250}}, publisher = {{Elsevier BV}}, title = {{{Mesoscopic transport phenomena in ultrashort channel MOSFETs}}}, doi = {{10.1016/s0038-1101(99)00060-x}}, volume = {{43}}, year = {{2002}}, } @article{39876, author = {{Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}}, issn = {{0925-9635}}, journal = {{Diamond and Related Materials}}, keywords = {{Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials}}, number = {{3-7}}, pages = {{511--514}}, publisher = {{Elsevier BV}}, title = {{{Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}}}, doi = {{10.1016/s0925-9635(01)00373-9}}, volume = {{10}}, year = {{2002}}, } @article{39877, author = {{Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{569--572}}, publisher = {{Elsevier BV}}, title = {{{A structure definition technique for 25 nm lines of silicon and related materials}}}, doi = {{10.1016/s0167-9317(00)00380-4}}, volume = {{53}}, year = {{2002}}, } @article{39874, author = {{Otterbach, R. and Hilleringmann, Ulrich}}, issn = {{0925-9635}}, journal = {{Diamond and Related Materials}}, keywords = {{Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials}}, number = {{3-6}}, pages = {{841--844}}, publisher = {{Elsevier BV}}, title = {{{Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}}}, doi = {{10.1016/s0925-9635(01)00703-8}}, volume = {{11}}, year = {{2002}}, } @inproceedings{39421, abstract = {{We present a rigorous but transparent semantics definition of SystemC that covers method, thread, and clocked thread behavior as well as their interaction with the simulation kernel process. The semantics includes watching statements, signal assignment, and wait statements as they are introduced in SystemC V1.O. We present our definition in form of distributed Abstract State Machines (ASMs) rules reflecting the view given in the SystemC User's Manual and the reference implementation. We mainly see our formal semantics as a concise, unambiguous, high-level specification for SystemC-based implementations and for standardization. Additionally, it can be used as a sound basis to investigate SystemC interoperability with Verilog and VHDL.}}, author = {{Müller, Wolfgang and Ruf, Jürgen and Hoffmann, D. W. and Gerlach, Joachim and Kropf, Thomas and Rosenstiehl, W.}}, booktitle = {{Proceedings of the Design, Automation, and Test in Europe (DATE’01)}}, isbn = {{0-7695-0993-2}}, keywords = {{Yarn, Formal verification, Kernel, Hardware design languages, Electronic design automation and methodology, Algebra, Computational modeling, Logic functions, Computer languages, Clocks}}, publisher = {{IEEE}}, title = {{{The Simulation Semantics of SystemC}}}, doi = {{10.1109/DATE.2001.915002}}, year = {{2001}}, }