[{"page":"211-214","intvolume":"        19","citation":{"ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>"},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","doi":"10.1016/0167-9317(92)90425-q","date_updated":"2023-03-21T09:49:25Z","volume":19,"author":[{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"status":"public","type":"journal_article","_id":"39914","department":[{"_id":"59"}],"user_id":"20179","year":"2002","issue":"1-4","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","publisher":"Elsevier BV","date_created":"2023-01-25T09:27:23Z","publication":"Microelectronic Engineering","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}]},{"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:51:19Z","author":[{"first_name":"E.","full_name":"Brass, E.","last_name":"Brass"},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."}],"date_created":"2023-01-25T09:23:36Z","volume":29,"title":"System integration of optical devices and analog CMOS amplifiers","doi":"10.1109/4.297714","publication_status":"published","publication_identifier":{"issn":["0018-9200"]},"issue":"8","year":"2002","citation":{"apa":"Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>, <i>29</i>(8), 1006–1010. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>","short":"E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.","mla":"Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","bibtex":"@article{Brass_Hilleringmann_Schumacher_2002, title={System integration of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }","ieee":"E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","chicago":"Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i> 29, no. 8 (2002): 1006–10. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>.","ama":"Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010. doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>"},"page":"1006-1010","intvolume":"        29","_id":"39906","user_id":"20179","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering"],"language":[{"iso":"eng"}],"type":"journal_article","publication":"IEEE Journal of Solid-State Circuits","status":"public"},{"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:51:33Z","date_created":"2023-01-25T09:24:15Z","author":[{"full_name":"Brass, E.","last_name":"Brass","first_name":"E."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"full_name":"Schumacher, K.","last_name":"Schumacher","first_name":"K."}],"volume":29,"title":"System integration of optical devices and analog CMOS amplifiers","doi":"10.1109/4.297714","publication_status":"published","publication_identifier":{"issn":["0018-9200"]},"issue":"8","year":"2002","citation":{"ama":"Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010. doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>","ieee":"E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","chicago":"Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i> 29, no. 8 (2002): 1006–10. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>.","apa":"Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>, <i>29</i>(8), 1006–1010. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>","bibtex":"@article{Brass_Hilleringmann_Schumacher_2002, title={System integration of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }","mla":"Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","short":"E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010."},"intvolume":"        29","page":"1006-1010","_id":"39907","user_id":"20179","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering"],"language":[{"iso":"eng"}],"type":"journal_article","publication":"IEEE Journal of Solid-State Circuits","status":"public"},{"year":"2002","page":"431-434","intvolume":"        30","citation":{"ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>.","ama":"Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>. 2002;30(1-4):431-434. doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.","mla":"Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }"},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","issue":"1-4","title":"Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique","doi":"10.1016/0167-9317(95)00280-4","date_updated":"2023-03-21T09:53:55Z","publisher":"Elsevier BV","volume":30,"author":[{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"date_created":"2023-01-25T09:20:20Z","status":"public","publication":"Microelectronic Engineering","type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39899","department":[{"_id":"59"}],"user_id":"20179"},{"title":"VLSI technologies for artificial neural networks","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_created":"2023-01-25T09:33:18Z","year":"2002","issue":"6","keyword":["Electrical and Electronic Engineering","Hardware and Architecture","Software"],"language":[{"iso":"eng"}],"publication":"IEEE Micro","doi":"10.1109/40.42985","date_updated":"2023-03-21T09:57:17Z","volume":9,"author":[{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Rueckert","full_name":"Rueckert, U.","first_name":"U."},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."}],"page":"28-44","intvolume":"         9","citation":{"short":"K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44.","mla":"Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","bibtex":"@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }","apa":"Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>","ama":"Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>","ieee":"K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44, 2002, doi: <a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","chicago":"Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002): 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>."},"publication_identifier":{"issn":["0272-1732"]},"publication_status":"published","_id":"39925","department":[{"_id":"59"}],"user_id":"20179","status":"public","type":"journal_article"},{"status":"public","publication":"Microelectronic Engineering","type":"journal_article","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39882","intvolume":"        53","page":"525-528","citation":{"chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>.","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>. 2002;53(1-4):525-528. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={525–528} }","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528.","mla":"Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>"},"year":"2002","issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","doi":"10.1016/s0167-9317(00)00370-1","title":"A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV","volume":53,"author":[{"last_name":"Mankowski","full_name":"Mankowski, V.","first_name":"V."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."}],"date_created":"2023-01-25T09:10:13Z","publisher":"Elsevier BV","date_updated":"2023-03-21T10:00:06Z"},{"doi":"10.1016/s0167-9317(00)00299-9","title":"1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","author":[{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"date_created":"2023-01-25T09:08:36Z","volume":53,"date_updated":"2023-03-21T10:02:46Z","publisher":"Elsevier BV","citation":{"bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.","mla":"Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>","ama":"Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>. 2002;53(1-4):213-216. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>."},"intvolume":"        53","page":"213-216","year":"2002","issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39879","status":"public","type":"journal_article","publication":"Microelectronic Engineering"},{"title":"A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits","doi":"10.1016/0167-9317(91)90231-2","publisher":"Elsevier BV","date_updated":"2023-03-22T10:29:08Z","volume":15,"date_created":"2023-01-25T09:29:32Z","author":[{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.","last_name":"Knospe","full_name":"Knospe, K."},{"last_name":"Heite","full_name":"Heite, C.","first_name":"C."},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"year":"2002","intvolume":"        15","page":"289-292","citation":{"apa":"Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>","bibtex":"@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}, year={2002}, pages={289–292} }","short":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292.","mla":"Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","ieee":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","chicago":"Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>.","ama":"Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>. 2002;15(1-4):289-292. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>"},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","issue":"1-4","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39919","department":[{"_id":"59"}],"user_id":"20179","status":"public","publication":"Microelectronic Engineering","type":"journal_article"},{"status":"public","type":"journal_article","publication":"IEEE Micro","keyword":["Electrical and Electronic Engineering","Hardware and Architecture","Software"],"language":[{"iso":"eng"}],"_id":"39926","user_id":"20179","department":[{"_id":"59"}],"year":"2002","citation":{"chicago":"Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002): 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>.","ieee":"K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44, 2002, doi: <a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","ama":"Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>","apa":"Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>","bibtex":"@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }","mla":"Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","short":"K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44."},"intvolume":"         9","page":"28-44","publication_status":"published","publication_identifier":{"issn":["0272-1732"]},"issue":"6","title":"VLSI technologies for artificial neural networks","doi":"10.1109/40.42985","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-22T10:36:45Z","author":[{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"last_name":"Rueckert","full_name":"Rueckert, U.","first_name":"U."},{"full_name":"Schumacher, K.","last_name":"Schumacher","first_name":"K."}],"date_created":"2023-01-25T09:33:50Z","volume":9},{"year":"2002","page":"633-636","intvolume":"        15","citation":{"apa":"Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>","bibtex":"@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }","mla":"Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","short":"A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.","chicago":"Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>.","ieee":"A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","ama":"Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>. 2002;15(1-4):633-636. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>"},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","issue":"1-4","title":"Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica","doi":"10.1016/0167-9317(91)90299-s","date_updated":"2023-03-21T09:47:17Z","publisher":"Elsevier BV","volume":15,"date_created":"2023-01-25T09:29:53Z","author":[{"first_name":"A.","full_name":"Soennecken, A.","last_name":"Soennecken"},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"status":"public","publication":"Microelectronic Engineering","type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39920","department":[{"_id":"59"}],"user_id":"20179"},{"publication":"Microelectronic Engineering","type":"journal_article","status":"public","department":[{"_id":"59"}],"user_id":"20179","_id":"39915","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","intvolume":"        19","page":"211-214","citation":{"ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>"},"year":"2002","volume":19,"author":[{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"date_created":"2023-01-25T09:27:51Z","date_updated":"2023-03-21T09:49:09Z","publisher":"Elsevier BV","doi":"10.1016/0167-9317(92)90425-q","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon"},{"publication":"Microelectronic Engineering","type":"journal_article","status":"public","department":[{"_id":"59"}],"user_id":"20179","_id":"39916","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","intvolume":"        19","page":"191-194","citation":{"short":"S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.","bibtex":"@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }","mla":"Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","apa":"Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 191–194. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>","ama":"Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>","ieee":"S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 191–194, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","chicago":"Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 191–94. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>."},"year":"2002","volume":19,"date_created":"2023-01-25T09:28:16Z","author":[{"last_name":"Adams","full_name":"Adams, S.","first_name":"S."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"publisher":"Elsevier BV","date_updated":"2023-03-21T09:48:55Z","doi":"10.1016/0167-9317(92)90420-v","title":"CMOS compatible micromachining by dry silicon-etching techniques"},{"status":"public","type":"journal_article","publication":"IEEE Transactions on Electron Devices","keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39348","user_id":"20179","department":[{"_id":"59"}],"year":"2002","citation":{"ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>.","ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>"},"intvolume":"        45","page":"299-306","publication_status":"published","publication_identifier":{"issn":["0018-9383"]},"issue":"1","title":"Matching analysis of deposition defined 50-nm MOSFET's","doi":"10.1109/16.658845","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:45:40Z","date_created":"2023-01-24T09:23:56Z","author":[{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.F.","first_name":"K.F."}],"volume":45},{"language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"publication":"Microelectronic Engineering","title":"12 kV low current cascaded light triggered switch on one silicon chip","date_created":"2023-01-25T09:13:17Z","publisher":"Elsevier BV","year":"2002","issue":"1-4","department":[{"_id":"59"}],"user_id":"20179","_id":"39889","status":"public","type":"journal_article","doi":"10.1016/s0167-9317(99)00122-7","volume":46,"author":[{"first_name":"V.","full_name":"Mankowski, V.","last_name":"Mankowski"},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"full_name":"Schumacher, K.","last_name":"Schumacher","first_name":"K."}],"date_updated":"2023-03-21T09:58:35Z","page":"413-417","intvolume":"        46","citation":{"apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>, <i>46</i>(1–4), 413–417. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={413–417} }","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.","mla":"Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier BV, 2002, pp. 413–17, doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i> 46, no. 1–4 (2002): 413–17. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417. doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>"},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published"},{"publication_status":"published","publication_identifier":{"issn":["0018-9383"]},"issue":"1","year":"2002","citation":{"ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>"},"page":"299-306","intvolume":"        45","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:58:01Z","author":[{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."},{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"},{"full_name":"Goser, K.F.","last_name":"Goser","first_name":"K.F."}],"date_created":"2023-01-25T09:14:43Z","volume":45,"title":"Matching analysis of deposition defined 50-nm MOSFET's","doi":"10.1109/16.658845","type":"journal_article","publication":"IEEE Transactions on Electron Devices","status":"public","_id":"39891","user_id":"20179","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}]},{"page":"1245-1250","intvolume":"        43","citation":{"chicago":"Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i> 43, no. 7 (2002): 1245–50. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.","ieee":"G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol. 43, no. 7, pp. 1245–1250, 2002, doi: <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","ama":"Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250. doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>","bibtex":"@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>}, number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250} }","mla":"Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50, doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","short":"G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250.","apa":"Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>, <i>43</i>(7), 1245–1250. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>"},"year":"2002","issue":"7","publication_identifier":{"issn":["0038-1101"]},"publication_status":"published","doi":"10.1016/s0038-1101(99)00060-x","title":"Mesoscopic transport phenomena in ultrashort channel MOSFETs","volume":43,"author":[{"first_name":"G","last_name":"Wirth","full_name":"Wirth, G"},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"last_name":"Horstmann","full_name":"Horstmann, J.T","first_name":"J.T"},{"first_name":"K","last_name":"Goser","full_name":"Goser, K"}],"date_created":"2023-01-25T09:11:50Z","date_updated":"2023-03-21T09:59:22Z","publisher":"Elsevier BV","status":"public","publication":"Solid-State Electronics","type":"journal_article","language":[{"iso":"eng"}],"keyword":["Materials Chemistry","Electrical and Electronic Engineering","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39886"},{"keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39876","department":[{"_id":"59"}],"user_id":"20179","status":"public","publication":"Diamond and Related Materials","type":"journal_article","title":"Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications","doi":"10.1016/s0925-9635(01)00373-9","date_updated":"2023-03-21T10:03:16Z","publisher":"Elsevier BV","volume":10,"author":[{"first_name":"R.","full_name":"Otterbach, R.","last_name":"Otterbach"},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"first_name":"T.J.","last_name":"Horstmann","full_name":"Horstmann, T.J."},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"date_created":"2023-01-25T09:07:37Z","year":"2002","intvolume":"        10","page":"511-514","citation":{"apa":"Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002). Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514. <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">https://doi.org/10.1016/s0925-9635(01)00373-9</a>","bibtex":"@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}, volume={10}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>}, number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}, year={2002}, pages={511–514} }","short":"R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514.","mla":"Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>.","ieee":"R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,” <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>.","chicago":"Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">https://doi.org/10.1016/s0925-9635(01)00373-9</a>.","ama":"Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>"},"publication_identifier":{"issn":["0925-9635"]},"publication_status":"published","issue":"3-7"},{"publisher":"Elsevier BV","date_updated":"2023-03-21T10:03:00Z","volume":53,"date_created":"2023-01-25T09:08:13Z","author":[{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"full_name":"Vieregge, T.","last_name":"Vieregge","first_name":"T."},{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."}],"title":"A structure definition technique for 25 nm lines of silicon and related materials","doi":"10.1016/s0167-9317(00)00380-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","issue":"1-4","year":"2002","page":"569-572","intvolume":"        53","citation":{"ama":"Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>. 2002;53(1-4):569-572. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>","chicago":"Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 569–72. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.","ieee":"U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","short":"U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.","bibtex":"@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }","mla":"Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 569–572. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>"},"_id":"39877","department":[{"_id":"59"}],"user_id":"20179","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication":"Microelectronic Engineering","type":"journal_article","status":"public"},{"intvolume":"        11","page":"841-844","citation":{"mla":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","bibtex":"@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}, volume={11}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>}, number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844} }","short":"R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.","apa":"Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6), 841–844. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>","ama":"Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>","chicago":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11, no. 3–6 (2002): 841–44. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.","ieee":"R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, pp. 841–844, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>."},"publication_identifier":{"issn":["0925-9635"]},"publication_status":"published","doi":"10.1016/s0925-9635(01)00703-8","volume":11,"author":[{"first_name":"R.","last_name":"Otterbach","full_name":"Otterbach, R."},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"}],"date_updated":"2023-03-21T10:03:48Z","status":"public","type":"journal_article","department":[{"_id":"59"}],"user_id":"20179","_id":"39874","year":"2002","issue":"3-6","title":"Reactive ion etching of CVD-diamond for piezoresistive pressure sensors","date_created":"2023-01-25T09:05:52Z","publisher":"Elsevier BV","publication":"Diamond and Related Materials","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"]},{"keyword":["Yarn","Formal verification","Kernel","Hardware design languages","Electronic design automation and methodology","Algebra","Computational modeling","Logic functions","Computer languages","Clocks"],"language":[{"iso":"eng"}],"_id":"39421","user_id":"5786","department":[{"_id":"672"}],"abstract":[{"text":"We present a rigorous but transparent semantics definition of SystemC that covers method, thread, and clocked thread behavior as well as their interaction with the simulation kernel process. The semantics includes watching statements, signal assignment, and wait statements as they are introduced in SystemC V1.O. We present our definition in form of distributed Abstract State Machines (ASMs) rules reflecting the view given in the SystemC User's Manual and the reference implementation. We mainly see our formal semantics as a concise, unambiguous, high-level specification for SystemC-based implementations and for standardization. Additionally, it can be used as a sound basis to investigate SystemC interoperability with Verilog and VHDL.","lang":"eng"}],"status":"public","type":"conference","publication":"Proceedings of the Design, Automation, and Test in Europe (DATE’01)","title":"The Simulation Semantics of SystemC","conference":{"name":" Proceedings Design, Automation and Test in Europe. Conference and Exhibition 2001"},"doi":"10.1109/DATE.2001.915002","publisher":"IEEE","date_updated":"2023-01-24T10:39:38Z","author":[{"full_name":"Müller, Wolfgang","id":"16243","last_name":"Müller","first_name":"Wolfgang"},{"first_name":"Jürgen","full_name":"Ruf, Jürgen","last_name":"Ruf"},{"full_name":"Hoffmann, D. W.","last_name":"Hoffmann","first_name":"D. W."},{"last_name":"Gerlach","full_name":"Gerlach, Joachim","first_name":"Joachim"},{"full_name":"Kropf, Thomas","last_name":"Kropf","first_name":"Thomas"},{"last_name":"Rosenstiehl","full_name":"Rosenstiehl, W.","first_name":"W."}],"date_created":"2023-01-24T10:39:33Z","place":"Munich, Germany ","year":"2001","citation":{"bibtex":"@inproceedings{Müller_Ruf_Hoffmann_Gerlach_Kropf_Rosenstiehl_2001, place={Munich, Germany }, title={The Simulation Semantics of SystemC}, DOI={<a href=\"https://doi.org/10.1109/DATE.2001.915002\">10.1109/DATE.2001.915002</a>}, booktitle={Proceedings of the Design, Automation, and Test in Europe (DATE’01)}, publisher={IEEE}, author={Müller, Wolfgang and Ruf, Jürgen and Hoffmann, D. W. and Gerlach, Joachim and Kropf, Thomas and Rosenstiehl, W.}, year={2001} }","mla":"Müller, Wolfgang, et al. “The Simulation Semantics of SystemC.” <i>Proceedings of the Design, Automation, and Test in Europe (DATE’01)</i>, IEEE, 2001, doi:<a href=\"https://doi.org/10.1109/DATE.2001.915002\">10.1109/DATE.2001.915002</a>.","short":"W. Müller, J. Ruf, D.W. Hoffmann, J. Gerlach, T. Kropf, W. Rosenstiehl, in: Proceedings of the Design, Automation, and Test in Europe (DATE’01), IEEE, Munich, Germany , 2001.","apa":"Müller, W., Ruf, J., Hoffmann, D. W., Gerlach, J., Kropf, T., &#38; Rosenstiehl, W. (2001). The Simulation Semantics of SystemC. <i>Proceedings of the Design, Automation, and Test in Europe (DATE’01)</i>.  Proceedings Design, Automation and Test in Europe. Conference and Exhibition 2001. <a href=\"https://doi.org/10.1109/DATE.2001.915002\">https://doi.org/10.1109/DATE.2001.915002</a>","ama":"Müller W, Ruf J, Hoffmann DW, Gerlach J, Kropf T, Rosenstiehl W. The Simulation Semantics of SystemC. In: <i>Proceedings of the Design, Automation, and Test in Europe (DATE’01)</i>. IEEE; 2001. doi:<a href=\"https://doi.org/10.1109/DATE.2001.915002\">10.1109/DATE.2001.915002</a>","chicago":"Müller, Wolfgang, Jürgen Ruf, D. W. Hoffmann, Joachim Gerlach, Thomas Kropf, and W. Rosenstiehl. “The Simulation Semantics of SystemC.” In <i>Proceedings of the Design, Automation, and Test in Europe (DATE’01)</i>. Munich, Germany : IEEE, 2001. <a href=\"https://doi.org/10.1109/DATE.2001.915002\">https://doi.org/10.1109/DATE.2001.915002</a>.","ieee":"W. Müller, J. Ruf, D. W. Hoffmann, J. Gerlach, T. Kropf, and W. Rosenstiehl, “The Simulation Semantics of SystemC,” presented at the  Proceedings Design, Automation and Test in Europe. Conference and Exhibition 2001, 2001, doi: <a href=\"https://doi.org/10.1109/DATE.2001.915002\">10.1109/DATE.2001.915002</a>."},"publication_identifier":{"isbn":["0-7695-0993-2"]}}]
