---
_id: '39914'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
    photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>.
    2002;19(1-4):211-214. doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>
  apa: Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic
    Engineering</i>, <i>19</i>(1–4), 211–214. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>
  bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
    DOI={<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
    of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i> 19, no. 1–4 (2002): 211–14. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
    waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>,
    vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.'
  mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
    Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.
  short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:23Z
date_updated: 2023-03-21T09:49:25Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
  circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39906'
author:
- first_name: E.
  full_name: Brass, E.
  last_name: Brass
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Brass E, Hilleringmann U, Schumacher K. System integration of optical devices
    and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010.
    doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>
  apa: Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration
    of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State
    Circuits</i>, <i>29</i>(8), 1006–1010. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>
  bibtex: '@article{Brass_Hilleringmann_Schumacher_2002, title={System integration
    of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>},
    number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann,
    Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }'
  chicago: 'Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration
    of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State
    Circuits</i> 29, no. 8 (2002): 1006–10. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>.'
  ieee: 'E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical
    devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>,
    vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.'
  mla: Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.”
    <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.
  short: E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits
    29 (2002) 1006–1010.
date_created: 2023-01-25T09:23:36Z
date_updated: 2023-03-21T09:51:19Z
department:
- _id: '59'
doi: 10.1109/4.297714
intvolume: '        29'
issue: '8'
keyword:
- Electrical and Electronic Engineering
language:
- iso: eng
page: 1006-1010
publication: IEEE Journal of Solid-State Circuits
publication_identifier:
  issn:
  - 0018-9200
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: System integration of optical devices and analog CMOS amplifiers
type: journal_article
user_id: '20179'
volume: 29
year: '2002'
...
---
_id: '39907'
author:
- first_name: E.
  full_name: Brass, E.
  last_name: Brass
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Brass E, Hilleringmann U, Schumacher K. System integration of optical devices
    and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010.
    doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>
  apa: Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration
    of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State
    Circuits</i>, <i>29</i>(8), 1006–1010. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>
  bibtex: '@article{Brass_Hilleringmann_Schumacher_2002, title={System integration
    of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>},
    number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann,
    Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }'
  chicago: 'Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration
    of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State
    Circuits</i> 29, no. 8 (2002): 1006–10. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>.'
  ieee: 'E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical
    devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>,
    vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.'
  mla: Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.”
    <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.
  short: E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits
    29 (2002) 1006–1010.
date_created: 2023-01-25T09:24:15Z
date_updated: 2023-03-21T09:51:33Z
department:
- _id: '59'
doi: 10.1109/4.297714
intvolume: '        29'
issue: '8'
keyword:
- Electrical and Electronic Engineering
language:
- iso: eng
page: 1006-1010
publication: IEEE Journal of Solid-State Circuits
publication_identifier:
  issn:
  - 0018-9200
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: System integration of optical devices and analog CMOS amplifiers
type: journal_article
user_id: '20179'
volume: 29
year: '2002'
...
---
_id: '39899'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors
    processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic
    Engineering</i>. 2002;30(1-4):431-434. doi:<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation
    of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback
    technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href="https://doi.org/10.1016/0167-9317(95)00280-4">https://doi.org/10.1016/0167-9317(95)00280-4</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of
    sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback
    technique}, volume={30}, DOI={<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={431–434} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation
    of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback
    Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a
    href="https://doi.org/10.1016/0167-9317(95)00280-4">https://doi.org/10.1016/0167-9317(95)00280-4</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100
    nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,”
    <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>.'
  mla: Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed
    by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic
    Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>.
  short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30
    (2002) 431–434.
date_created: 2023-01-25T09:20:20Z
date_updated: 2023-03-21T09:53:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(95)00280-4
intvolume: '        30'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 431-434
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Characterisation of sub-100 nm-MOS-transistors processed by optical lithography
  and a sidewall-etchback technique
type: journal_article
user_id: '20179'
volume: 30
year: '2002'
...
---
_id: '39925'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial
    neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>
  apa: Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI
    technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44.
    <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>
  bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies
    for artificial neural networks}, volume={9}, DOI={<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>},
    number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics
    Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.
    and Schumacher, K.}, year={2002}, pages={28–44} }'
  chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI
    Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002):
    28–44. <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>.'
  ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies
    for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44,
    2002, doi: <a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.'
  mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE
    Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE),
    2002, pp. 28–44, doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.
  short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002)
    28–44.
date_created: 2023-01-25T09:33:18Z
date_updated: 2023-03-21T09:57:17Z
department:
- _id: '59'
doi: 10.1109/40.42985
intvolume: '         9'
issue: '6'
keyword:
- Electrical and Electronic Engineering
- Hardware and Architecture
- Software
language:
- iso: eng
page: 28-44
publication: IEEE Micro
publication_identifier:
  issn:
  - 0272-1732
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: VLSI technologies for artificial neural networks
type: journal_article
user_id: '20179'
volume: 9
year: '2002'
...
---
_id: '39882'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for
    smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic
    Engineering</i>. 2002;53(1-4):525-528. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation
    technique for smart power switching devices and very high voltage ICs above 10
    kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">https://doi.org/10.1016/s0167-9317(00)00370-1</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation
    technique for smart power switching devices and very high voltage ICs above 10
    kV}, volume={53}, DOI={<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={525–528} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation
    Technique for Smart Power Switching Devices and Very High Voltage ICs above 10
    KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">https://doi.org/10.1016/s0167-9317(00)00370-1</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique
    for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>.'
  mla: Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching
    Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>,
    vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    53 (2002) 525–528.
date_created: 2023-01-25T09:10:13Z
date_updated: 2023-03-21T10:00:06Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00370-1
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 525-528
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A novel insulation technique for smart power switching devices and very high
  voltage ICs above 10 kV
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39879'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique. <i>Microelectronic
    Engineering</i>. 2002;53(1-4):213-216. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique.
    <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">https://doi.org/10.1016/s0167-9317(00)00299-9</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique},
    volume={53}, DOI={<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={213–216} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100
    Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”
    <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">https://doi.org/10.1016/s0167-9317(00)00299-9</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>.'
  mla: Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated
    by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>,
    vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>.
  short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53
    (2002) 213–216.
date_created: 2023-01-25T09:08:36Z
date_updated: 2023-03-21T10:02:46Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00299-9
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 213-216
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition
  and etchback technique
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39919'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Knospe, K.
  last_name: Knospe
- first_name: C.
  full_name: Heite, C.
  last_name: Heite
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based
    technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):289-292. doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>
  apa: Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002).
    A silicon based technology for monolithic integration of waveguides and VLSI CMOS
    circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>
  bibtex: '@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K.
    and Goser, K.}, year={2002}, pages={289–292} }'
  chicago: 'Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser.
    “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI
    CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92.
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>.'
  ieee: 'U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration
    of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol.
    15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.
  short: U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic
    Engineering 15 (2002) 289–292.
date_created: 2023-01-25T09:29:32Z
date_updated: 2023-03-22T10:29:08Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90231-2
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 289-292
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A silicon based technology for monolithic integration of waveguides and VLSI
  CMOS circuits
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39926'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial
    neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>
  apa: Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI
    technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44.
    <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>
  bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies
    for artificial neural networks}, volume={9}, DOI={<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>},
    number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics
    Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.
    and Schumacher, K.}, year={2002}, pages={28–44} }'
  chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI
    Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002):
    28–44. <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>.'
  ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies
    for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44,
    2002, doi: <a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.'
  mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE
    Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE),
    2002, pp. 28–44, doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.
  short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002)
    28–44.
date_created: 2023-01-25T09:33:50Z
date_updated: 2023-03-22T10:36:45Z
department:
- _id: '59'
doi: 10.1109/40.42985
intvolume: '         9'
issue: '6'
keyword:
- Electrical and Electronic Engineering
- Hardware and Architecture
- Software
language:
- iso: eng
page: 28-44
publication: IEEE Micro
publication_identifier:
  issn:
  - 0272-1732
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: VLSI technologies for artificial neural networks
type: journal_article
user_id: '20179'
volume: 9
year: '2002'
...
---
_id: '39920'
author:
- first_name: A.
  full_name: Soennecken, A.
  last_name: Soennecken
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile
    analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):633-636. doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>
  apa: Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica.
    <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>
  bibtex: '@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={633–636} }'
  chicago: 'Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures
    as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.”
    <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>.'
  ieee: 'A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.'
  mla: Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory
    Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic
    Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.
  short: A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15
    (2002) 633–636.
date_created: 2023-01-25T09:29:53Z
date_updated: 2023-03-21T09:47:17Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90299-s
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 633-636
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS
  technology with PZT dielectrica
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39915'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
    photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>.
    2002;19(1-4):211-214. doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>
  apa: Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic
    Engineering</i>, <i>19</i>(1–4), 211–214. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>
  bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
    DOI={<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
    of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i> 19, no. 1–4 (2002): 211–14. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
    waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>,
    vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.'
  mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
    Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.
  short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:51Z
date_updated: 2023-03-21T09:49:09Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
  circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39916'
author:
- first_name: S.
  full_name: Adams, S.
  last_name: Adams
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching
    techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>
  apa: Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining
    by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4),
    191–194. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>
  bibtex: '@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining
    by dry silicon-etching techniques}, volume={19}, DOI={<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194}
    }'
  chicago: 'Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining
    by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no.
    1–4 (2002): 191–94. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>.'
  ieee: 'S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining
    by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19,
    no. 1–4, pp. 191–194, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.'
  mla: Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”
    <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94,
    doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.
  short: S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002)
    191–194.
date_created: 2023-01-25T09:28:16Z
date_updated: 2023-03-21T09:48:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90420-v
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 191-194
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: CMOS compatible micromachining by dry silicon-etching techniques
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39348'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-24T09:23:56Z
date_updated: 2023-03-21T09:45:40Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39889'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light
    triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417.
    doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current
    cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>,
    <i>46</i>(1–4), 413–417. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current
    cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={413–417} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current
    Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>
    46, no. 1–4 (2002): 413–17. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded
    light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>,
    vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.'
  mla: Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on
    One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier
    BV, 2002, pp. 413–17, doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    46 (2002) 413–417.
date_created: 2023-01-25T09:13:17Z
date_updated: 2023-03-21T09:58:35Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(99)00122-7
intvolume: '        46'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 413-417
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 12 kV low current cascaded light triggered switch on one silicon chip
type: journal_article
user_id: '20179'
volume: 46
year: '2002'
...
---
_id: '39891'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-25T09:14:43Z
date_updated: 2023-03-21T09:58:01Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39886'
author:
- first_name: G
  full_name: Wirth, G
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: J.T
  full_name: Horstmann, J.T
  last_name: Horstmann
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena
    in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250.
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>
  apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic
    transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>,
    <i>43</i>(7), 1245–1250. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>
  bibtex: '@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport
    phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>},
    number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth,
    G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250}
    }'
  chicago: 'Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic
    Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>
    43, no. 7 (2002): 1245–50. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.'
  ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport
    phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol.
    43, no. 7, pp. 1245–1250, 2002, doi: <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.'
  mla: Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.”
    <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50,
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.
  short: G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics
    43 (2002) 1245–1250.
date_created: 2023-01-25T09:11:50Z
date_updated: 2023-03-21T09:59:22Z
department:
- _id: '59'
doi: 10.1016/s0038-1101(99)00060-x
intvolume: '        43'
issue: '7'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 1245-1250
publication: Solid-State Electronics
publication_identifier:
  issn:
  - 0038-1101
publication_status: published
publisher: Elsevier BV
status: public
title: Mesoscopic transport phenomena in ultrashort channel MOSFETs
type: journal_article
user_id: '20179'
volume: 43
year: '2002'
...
---
_id: '39876'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.J.
  full_name: Horstmann, T.J.
  last_name: Horstmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum
    feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond
    and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>
  apa: Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002).
    Structures with a minimum feature size of less than 100 nm in CVD-diamond for
    sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514.
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>
  bibtex: '@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications},
    volume={10}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>},
    number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser,
    K.}, year={2002}, pages={511–514} }'
  chicago: 'Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures
    with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.”
    <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>.'
  ieee: 'R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,”
    <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi:
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.'
  mla: Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than
    100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>,
    vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.
  short: R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related
    Materials 10 (2002) 511–514.
date_created: 2023-01-25T09:07:37Z
date_updated: 2023-03-21T10:03:16Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00373-9
intvolume: '        10'
issue: 3-7
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 511-514
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Structures with a minimum feature size of less than 100 nm in CVD-diamond for
  sensor applications
type: journal_article
user_id: '20179'
volume: 10
year: '2002'
...
---
_id: '39877'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.
  full_name: Vieregge, T.
  last_name: Vieregge
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
citation:
  ama: Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique
    for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>.
    2002;53(1-4):569-572. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>
  apa: Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure
    definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic
    Engineering</i>, <i>53</i>(1–4), 569–572. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>
  bibtex: '@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition
    technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a
    href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002},
    pages={569–572} }'
  chicago: 'Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition
    Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic
    Engineering</i> 53, no. 1–4 (2002): 569–72. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.'
  ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition
    technique for 25 nm lines of silicon and related materials,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines
    of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53,
    no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.
  short: U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering
    53 (2002) 569–572.
date_created: 2023-01-25T09:08:13Z
date_updated: 2023-03-21T10:03:00Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00380-4
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 569-572
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A structure definition technique for 25 nm lines of silicon and related materials
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39874'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive
    pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844.
    doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>
  apa: Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6),
    841–844. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>
  bibtex: '@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors}, volume={11}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>},
    number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844}
    }'
  chicago: 'Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11,
    no. 3–6 (2002): 841–44. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.'
  ieee: 'R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for
    piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11,
    no. 3–6, pp. 841–844, 2002, doi: <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.'
  mla: Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol.
    11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.
  short: R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.
date_created: 2023-01-25T09:05:52Z
date_updated: 2023-03-21T10:03:48Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00703-8
intvolume: '        11'
issue: 3-6
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 841-844
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
type: journal_article
user_id: '20179'
volume: 11
year: '2002'
...
---
_id: '39421'
abstract:
- lang: eng
  text: We present a rigorous but transparent semantics definition of SystemC that
    covers method, thread, and clocked thread behavior as well as their interaction
    with the simulation kernel process. The semantics includes watching statements,
    signal assignment, and wait statements as they are introduced in SystemC V1.O.
    We present our definition in form of distributed Abstract State Machines (ASMs)
    rules reflecting the view given in the SystemC User's Manual and the reference
    implementation. We mainly see our formal semantics as a concise, unambiguous,
    high-level specification for SystemC-based implementations and for standardization.
    Additionally, it can be used as a sound basis to investigate SystemC interoperability
    with Verilog and VHDL.
author:
- first_name: Wolfgang
  full_name: Müller, Wolfgang
  id: '16243'
  last_name: Müller
- first_name: Jürgen
  full_name: Ruf, Jürgen
  last_name: Ruf
- first_name: D. W.
  full_name: Hoffmann, D. W.
  last_name: Hoffmann
- first_name: Joachim
  full_name: Gerlach, Joachim
  last_name: Gerlach
- first_name: Thomas
  full_name: Kropf, Thomas
  last_name: Kropf
- first_name: W.
  full_name: Rosenstiehl, W.
  last_name: Rosenstiehl
citation:
  ama: 'Müller W, Ruf J, Hoffmann DW, Gerlach J, Kropf T, Rosenstiehl W. The Simulation
    Semantics of SystemC. In: <i>Proceedings of the Design, Automation, and Test in
    Europe (DATE’01)</i>. IEEE; 2001. doi:<a href="https://doi.org/10.1109/DATE.2001.915002">10.1109/DATE.2001.915002</a>'
  apa: Müller, W., Ruf, J., Hoffmann, D. W., Gerlach, J., Kropf, T., &#38; Rosenstiehl,
    W. (2001). The Simulation Semantics of SystemC. <i>Proceedings of the Design,
    Automation, and Test in Europe (DATE’01)</i>.  Proceedings Design, Automation
    and Test in Europe. Conference and Exhibition 2001. <a href="https://doi.org/10.1109/DATE.2001.915002">https://doi.org/10.1109/DATE.2001.915002</a>
  bibtex: '@inproceedings{Müller_Ruf_Hoffmann_Gerlach_Kropf_Rosenstiehl_2001, place={Munich,
    Germany }, title={The Simulation Semantics of SystemC}, DOI={<a href="https://doi.org/10.1109/DATE.2001.915002">10.1109/DATE.2001.915002</a>},
    booktitle={Proceedings of the Design, Automation, and Test in Europe (DATE’01)},
    publisher={IEEE}, author={Müller, Wolfgang and Ruf, Jürgen and Hoffmann, D. W.
    and Gerlach, Joachim and Kropf, Thomas and Rosenstiehl, W.}, year={2001} }'
  chicago: 'Müller, Wolfgang, Jürgen Ruf, D. W. Hoffmann, Joachim Gerlach, Thomas
    Kropf, and W. Rosenstiehl. “The Simulation Semantics of SystemC.” In <i>Proceedings
    of the Design, Automation, and Test in Europe (DATE’01)</i>. Munich, Germany :
    IEEE, 2001. <a href="https://doi.org/10.1109/DATE.2001.915002">https://doi.org/10.1109/DATE.2001.915002</a>.'
  ieee: 'W. Müller, J. Ruf, D. W. Hoffmann, J. Gerlach, T. Kropf, and W. Rosenstiehl,
    “The Simulation Semantics of SystemC,” presented at the  Proceedings Design, Automation
    and Test in Europe. Conference and Exhibition 2001, 2001, doi: <a href="https://doi.org/10.1109/DATE.2001.915002">10.1109/DATE.2001.915002</a>.'
  mla: Müller, Wolfgang, et al. “The Simulation Semantics of SystemC.” <i>Proceedings
    of the Design, Automation, and Test in Europe (DATE’01)</i>, IEEE, 2001, doi:<a
    href="https://doi.org/10.1109/DATE.2001.915002">10.1109/DATE.2001.915002</a>.
  short: 'W. Müller, J. Ruf, D.W. Hoffmann, J. Gerlach, T. Kropf, W. Rosenstiehl,
    in: Proceedings of the Design, Automation, and Test in Europe (DATE’01), IEEE,
    Munich, Germany , 2001.'
conference:
  name: ' Proceedings Design, Automation and Test in Europe. Conference and Exhibition
    2001'
date_created: 2023-01-24T10:39:33Z
date_updated: 2023-01-24T10:39:38Z
department:
- _id: '672'
doi: 10.1109/DATE.2001.915002
keyword:
- Yarn
- Formal verification
- Kernel
- Hardware design languages
- Electronic design automation and methodology
- Algebra
- Computational modeling
- Logic functions
- Computer languages
- Clocks
language:
- iso: eng
place: 'Munich, Germany '
publication: Proceedings of the Design, Automation, and Test in Europe (DATE’01)
publication_identifier:
  isbn:
  - 0-7695-0993-2
publisher: IEEE
status: public
title: The Simulation Semantics of SystemC
type: conference
user_id: '5786'
year: '2001'
...