@article{4551,
  abstract     = {{An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.}},
  author       = {{Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}},
  issn         = {{1386-9477}},
  journal      = {{Physica E: Low-dimensional Systems and Nanostructures}},
  keywords     = {{Molecular beam epitaxy, Focused ion beam, Self-assembled quantum dot, Electroluminescence}},
  number       = {{10}},
  pages        = {{2749--2752}},
  publisher    = {{Elsevier BV}},
  title        = {{{Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}}},
  doi          = {{10.1016/j.physe.2009.12.053}},
  volume       = {{42}},
  year         = {{2010}},
}