---
_id: '4551'
abstract:
- lang: eng
  text: An intentional positioning of optically active quantum dots using site-selective
    growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB)
    implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated.
    A square array of periodic holes on GaAs substrate was fabricated with FIB of
    30 keV ions followed by an in situ annealing step. Subsequently, the patterned
    holes were overgrown with an optimized amount of InAs in order to achieve site-selective
    growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity
    of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter,
    carrier injection and subsequent radiative recombination from the positioned InAs/GaAs
    self-assembled QDs was investigated by embedding the QDs in the intrinsic part
    of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77
    K show interband transitions up to the fifth excited state from the QDs.
article_type: original
author:
- first_name: Minisha
  full_name: Mehta, Minisha
  last_name: Mehta
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Alexander
  full_name: Melnikov, Alexander
  last_name: Melnikov
- first_name: Andreas D.
  full_name: Wieck, Andreas D.
  last_name: Wieck
- first_name: Steffen
  full_name: Michaelis de Vasconcellos, Steffen
  last_name: Michaelis de Vasconcellos
- first_name: Tim
  full_name: Baumgarten, Tim
  last_name: Baumgarten
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
citation:
  ama: 'Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled
    InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E:
    Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2749-2752. doi:<a
    href="https://doi.org/10.1016/j.physe.2009.12.053">10.1016/j.physe.2009.12.053</a>'
  apa: 'Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos,
    S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled
    InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E:
    Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2749–2752. <a href="https://doi.org/10.1016/j.physe.2009.12.053">https://doi.org/10.1016/j.physe.2009.12.053</a>'
  bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010,
    title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
    p–i–n junction diode}, volume={42}, DOI={<a href="https://doi.org/10.1016/j.physe.2009.12.053">10.1016/j.physe.2009.12.053</a>},
    number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
    publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov,
    Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten,
    Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }'
  chicago: 'Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen
    Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally
    Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction
    Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10
    (2010): 2749–52. <a href="https://doi.org/10.1016/j.physe.2009.12.053">https://doi.org/10.1016/j.physe.2009.12.053</a>.'
  ieee: 'M. Mehta <i>et al.</i>, “Intentionally positioned self-assembled InAs quantum
    dots in an electroluminescent p–i–n junction diode,” <i>Physica E: Low-dimensional
    Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2749–2752, 2010.'
  mla: 'Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum
    Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional
    Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52,
    doi:<a href="https://doi.org/10.1016/j.physe.2009.12.053">10.1016/j.physe.2009.12.053</a>.'
  short: 'M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos,
    T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures
    42 (2010) 2749–2752.'
date_created: 2018-09-20T12:42:40Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1016/j.physe.2009.12.053
intvolume: '        42'
issue: '10'
keyword:
- Molecular beam epitaxy
- Focused ion beam
- Self-assembled quantum dot
- Electroluminescence
language:
- iso: eng
page: 2749-2752
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
  issn:
  - 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
  p–i–n junction diode
type: journal_article
user_id: '20798'
volume: 42
year: '2010'
...