@article{20592,
  abstract     = {{GaAs-(111)-nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift-off using selective etching of Al-containing layers and subsequent transfer to glass substrates. Herein, the selective etching of (111)B-oriented AlxGa1−xAs sacrificial layers (10–50 nm thick) with different aluminum concentrations (x = 0.5–1.0) in 10\% hydrofluoric acid is investigated and compared with standard (100)-oriented structures. The thinner the sacrificial layer and the lower the aluminum content, the lower the lateral etch rate. For both orientations, the lateral etch rates are in the same order of magnitude, but some quantitative differences exist. Furthermore, the epitaxial lift-off, the transfer, and the nanopatterning of thin (111)B-oriented GaAs membranes are demonstrated. Atomic force microscopy and high-resolution X-ray diffraction measurements reveal the high structural quality of the transferred GaAs-(111) films.}},
  author       = {{Henksmeier, Tobias and Eppinger, Martin and Reineke, Bernhard and Zentgraf, Thomas and Meier, Cedrik and Reuter, Dirk}},
  journal      = {{physica status solidi (a)}},
  keywords     = {{epitaxial lift-off, GaAs/AlxGa1−xAs heterostructures, selective etching}},
  number       = {{3}},
  pages        = {{2000408}},
  title        = {{{Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off}}},
  doi          = {{https://doi.org/10.1002/pssa.202000408}},
  volume       = {{218}},
  year         = {{2021}},
}

@article{4276,
  abstract     = {{We analyse an InAs/GaAs-based electric field tunable single quantum dot diode with a thin tunnelling barrier between a
buried n þ -back contact and a quantum dot layer. In voltage- dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between confined holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states.}},
  author       = {{Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{excitons, GaAs, InAs, quantum dots, spatially indirect transitions, Stark shift}},
  number       = {{3}},
  pages        = {{437--441}},
  publisher    = {{Wiley}},
  title        = {{{Spatially indirect transitions in electric field tunable quantum dot diodes}}},
  doi          = {{10.1002/pssb.201552591}},
  volume       = {{253}},
  year         = {{2015}},
}