---
_id: '20592'
abstract:
- lang: eng
text: GaAs-(111)-nanostructures exhibiting second harmonic generation are new building
blocks in nonlinear optics. Such structures can be fabricated through epitaxial
lift-off using selective etching of Al-containing layers and subsequent transfer
to glass substrates. Herein, the selective etching of (111)B-oriented AlxGa1−xAs
sacrificial layers (10–50 nm thick) with different aluminum concentrations (x
= 0.5–1.0) in 10\% hydrofluoric acid is investigated and compared with standard
(100)-oriented structures. The thinner the sacrificial layer and the lower the
aluminum content, the lower the lateral etch rate. For both orientations, the
lateral etch rates are in the same order of magnitude, but some quantitative differences
exist. Furthermore, the epitaxial lift-off, the transfer, and the nanopatterning
of thin (111)B-oriented GaAs membranes are demonstrated. Atomic force microscopy
and high-resolution X-ray diffraction measurements reveal the high structural
quality of the transferred GaAs-(111) films.
article_type: original
author:
- first_name: Tobias
full_name: Henksmeier, Tobias
last_name: Henksmeier
- first_name: Martin
full_name: Eppinger, Martin
last_name: Eppinger
- first_name: Bernhard
full_name: Reineke, Bernhard
last_name: Reineke
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Henksmeier T, Eppinger M, Reineke B, Zentgraf T, Meier C, Reuter D. Selective
Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off. physica
status solidi (a). 2021;218(3):2000408. doi:https://doi.org/10.1002/pssa.202000408
apa: Henksmeier, T., Eppinger, M., Reineke, B., Zentgraf, T., Meier, C., & Reuter,
D. (2021). Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial
Lift-Off. Physica Status Solidi (A), 218(3), 2000408. https://doi.org/10.1002/pssa.202000408
bibtex: '@article{Henksmeier_Eppinger_Reineke_Zentgraf_Meier_Reuter_2021, title={Selective
Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off}, volume={218},
DOI={https://doi.org/10.1002/pssa.202000408},
number={3}, journal={physica status solidi (a)}, author={Henksmeier, Tobias and
Eppinger, Martin and Reineke, Bernhard and Zentgraf, Thomas and Meier, Cedrik
and Reuter, Dirk}, year={2021}, pages={2000408} }'
chicago: 'Henksmeier, Tobias, Martin Eppinger, Bernhard Reineke, Thomas Zentgraf,
Cedrik Meier, and Dirk Reuter. “Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers
for Epitaxial Lift-Off.” Physica Status Solidi (A) 218, no. 3 (2021): 2000408.
https://doi.org/10.1002/pssa.202000408.'
ieee: T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, and D. Reuter,
“Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off,”
physica status solidi (a), vol. 218, no. 3, p. 2000408, 2021.
mla: Henksmeier, Tobias, et al. “Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers
for Epitaxial Lift-Off.” Physica Status Solidi (A), vol. 218, no. 3, 2021,
p. 2000408, doi:https://doi.org/10.1002/pssa.202000408.
short: T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, D. Reuter,
Physica Status Solidi (A) 218 (2021) 2000408.
date_created: 2020-12-02T09:50:10Z
date_updated: 2022-01-06T06:54:30Z
department:
- _id: '230'
- _id: '429'
doi: https://doi.org/10.1002/pssa.202000408
intvolume: ' 218'
issue: '3'
keyword:
- epitaxial lift-off
- GaAs/AlxGa1−xAs heterostructures
- selective etching
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.202000408
oa: '1'
page: '2000408'
project:
- _id: '53'
name: TRR 142
- _id: '54'
name: TRR 142 - Project Area A
- _id: '63'
name: TRR 142 - Subproject A6
- _id: '56'
name: TRR 142 - Project Area C
- _id: '75'
name: TRR 142 - Subproject C5
publication: physica status solidi (a)
publication_status: published
status: public
title: Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off
type: journal_article
user_id: '30525'
volume: 218
year: '2021'
...
---
_id: '4276'
abstract:
- lang: eng
text: "We analyse an InAs/GaAs-based electric field tunable single quantum dot diode
with a thin tunnelling barrier between a\r\nburied n þ -back contact and a quantum
dot layer. In voltage- dependent photoluminescence measurements, we observe rich
signatures from spatially direct and indirect transitions from the wetting layer
and from a single quantum dot. By analysing the Stark effect, we show that the
indirect transitions result from a recombination between confined holes in the
wetting or quantum dot layer with electrons from the edge of the Fermi sea in
the back contact. Using a 17 nm tunnel barrier which provides comparably weak
tunnel coupling allowed us to observe clear signatures of direct and corresponding
indirect lines for a series of neutral and positively charged quantum dot states."
article_type: original
author:
- first_name: Ashish K.
full_name: Rai, Ashish K.
last_name: Rai
- first_name: Simon
full_name: Gordon, Simon
last_name: Gordon
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Rai AK, Gordon S, Ludwig A, Wieck AD, Zrenner A, Reuter D. Spatially indirect
transitions in electric field tunable quantum dot diodes. physica status solidi
(b). 2015;253(3):437-441. doi:10.1002/pssb.201552591
apa: Rai, A. K., Gordon, S., Ludwig, A., Wieck, A. D., Zrenner, A., & Reuter,
D. (2015). Spatially indirect transitions in electric field tunable quantum dot
diodes. Physica Status Solidi (B), 253(3), 437–441. https://doi.org/10.1002/pssb.201552591
bibtex: '@article{Rai_Gordon_Ludwig_Wieck_Zrenner_Reuter_2015, title={Spatially
indirect transitions in electric field tunable quantum dot diodes}, volume={253},
DOI={10.1002/pssb.201552591},
number={3}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rai,
Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner,
Artur and Reuter, Dirk}, year={2015}, pages={437–441} }'
chicago: 'Rai, Ashish K., Simon Gordon, Arne Ludwig, Andreas D. Wieck, Artur Zrenner,
and Dirk Reuter. “Spatially Indirect Transitions in Electric Field Tunable Quantum
Dot Diodes.” Physica Status Solidi (B) 253, no. 3 (2015): 437–41. https://doi.org/10.1002/pssb.201552591.'
ieee: A. K. Rai, S. Gordon, A. Ludwig, A. D. Wieck, A. Zrenner, and D. Reuter, “Spatially
indirect transitions in electric field tunable quantum dot diodes,” physica
status solidi (b), vol. 253, no. 3, pp. 437–441, 2015.
mla: Rai, Ashish K., et al. “Spatially Indirect Transitions in Electric Field Tunable
Quantum Dot Diodes.” Physica Status Solidi (B), vol. 253, no. 3, Wiley,
2015, pp. 437–41, doi:10.1002/pssb.201552591.
short: A.K. Rai, S. Gordon, A. Ludwig, A.D. Wieck, A. Zrenner, D. Reuter, Physica
Status Solidi (B) 253 (2015) 437–441.
date_created: 2018-08-29T10:03:56Z
date_updated: 2022-01-06T07:00:46Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.201552591
intvolume: ' 253'
issue: '3'
keyword:
- excitons
- GaAs
- InAs
- quantum dots
- spatially indirect transitions
- Stark shift
language:
- iso: eng
page: 437-441
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Spatially indirect transitions in electric field tunable quantum dot diodes
type: journal_article
user_id: '42514'
volume: 253
year: '2015'
...