---
_id: '4379'
abstract:
- lang: eng
  text: Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers
    with an off orientation of 6º towards < 111> by means of electrochemical etching
    in ethanoic-based HF electrolytes. These substrates are of interest for the epitaxial
    growth of III–V compound semiconductor stacks on their top for the production
    of multi-junction solar cells and very thin electronic devices. We demonstrate
    transfer of porous layers after an annealing process in hydrogen atmosphere. Electron
    Back-Scatter Diffraction analysis confirms that the substrate orientation is conserved
    during the etching and annealing steps. Confocal μ-Raman spectroscopy analysis
    shows a decrease in the Raman signal intensity after etching and a subsequent
    increase after annealing while no shift is observed. By means of Atomic Force
    Microscopy, analysis the surface appearance after the etching and annealing steps
    can be visualized. The mean surface roughness varies during the process from 0.55
    nm for the unprocessed wafers to 0.27 nm after etching and 0.78 nm after annealing.
    The decrease of average roughness after etching is caused by an electropolishing
    step prior to porous formation. Despite of slight increase of mean surface roughness
    after annealing the samples are still appropriate for high quality epitaxial growth
    and subsequent lift-off.
article_type: original
author:
- first_name: E.
  full_name: Garralaga Rojas, E.
  last_name: Garralaga Rojas
- first_name: B.
  full_name: Terheiden, B.
  last_name: Terheiden
- first_name: H.
  full_name: Plagwitz, H.
  last_name: Plagwitz
- first_name: J.
  full_name: Hensen, J.
  last_name: Hensen
- first_name: V.
  full_name: Wiedemeier, V.
  last_name: Wiedemeier
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: R.
  full_name: Brendel, R.
  last_name: Brendel
citation:
  ama: Garralaga Rojas E, Terheiden B, Plagwitz H, et al. Lift-off of mesoporous layers
    by electrochemical etching on Si (100) substrates with miscut of 6° off towards
    (111). <i>Thin Solid Films</i>. 2011;520(1):606-609. doi:<a href="https://doi.org/10.1016/j.tsf.2011.07.063">10.1016/j.tsf.2011.07.063</a>
  apa: Garralaga Rojas, E., Terheiden, B., Plagwitz, H., Hensen, J., Wiedemeier, V.,
    Berth, G., … Brendel, R. (2011). Lift-off of mesoporous layers by electrochemical
    etching on Si (100) substrates with miscut of 6° off towards (111). <i>Thin Solid
    Films</i>, <i>520</i>(1), 606–609. <a href="https://doi.org/10.1016/j.tsf.2011.07.063">https://doi.org/10.1016/j.tsf.2011.07.063</a>
  bibtex: '@article{Garralaga Rojas_Terheiden_Plagwitz_Hensen_Wiedemeier_Berth_Zrenner_Brendel_2011,
    title={Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates
    with miscut of 6° off towards (111)}, volume={520}, DOI={<a href="https://doi.org/10.1016/j.tsf.2011.07.063">10.1016/j.tsf.2011.07.063</a>},
    number={1}, journal={Thin Solid Films}, publisher={Elsevier BV}, author={Garralaga
    Rojas, E. and Terheiden, B. and Plagwitz, H. and Hensen, J. and Wiedemeier, V.
    and Berth, Gerhard and Zrenner, Artur and Brendel, R.}, year={2011}, pages={606–609}
    }'
  chicago: 'Garralaga Rojas, E., B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier,
    Gerhard Berth, Artur Zrenner, and R. Brendel. “Lift-off of Mesoporous Layers by
    Electrochemical Etching on Si (100) Substrates with Miscut of 6° off towards (111).”
    <i>Thin Solid Films</i> 520, no. 1 (2011): 606–9. <a href="https://doi.org/10.1016/j.tsf.2011.07.063">https://doi.org/10.1016/j.tsf.2011.07.063</a>.'
  ieee: E. Garralaga Rojas <i>et al.</i>, “Lift-off of mesoporous layers by electrochemical
    etching on Si (100) substrates with miscut of 6° off towards (111),” <i>Thin Solid
    Films</i>, vol. 520, no. 1, pp. 606–609, 2011.
  mla: Garralaga Rojas, E., et al. “Lift-off of Mesoporous Layers by Electrochemical
    Etching on Si (100) Substrates with Miscut of 6° off towards (111).” <i>Thin Solid
    Films</i>, vol. 520, no. 1, Elsevier BV, 2011, pp. 606–09, doi:<a href="https://doi.org/10.1016/j.tsf.2011.07.063">10.1016/j.tsf.2011.07.063</a>.
  short: E. Garralaga Rojas, B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier,
    G. Berth, A. Zrenner, R. Brendel, Thin Solid Films 520 (2011) 606–609.
date_created: 2018-09-11T14:21:12Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.tsf.2011.07.063
intvolume: '       520'
issue: '1'
keyword:
- Porous Si
- Layer transfer
- Thin-film
- Photovoltaics
language:
- iso: eng
page: 606-609
publication: Thin Solid Films
publication_identifier:
  issn:
  - 0040-6090
publication_status: published
publisher: Elsevier BV
status: public
title: Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates
  with miscut of 6° off towards (111)
type: journal_article
user_id: '49428'
volume: 520
year: '2011'
...