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Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>","lang":"eng"}],"publication":"Journal of Materials Research","title":"Degradation of organic field-effect transistors made of pentacene","date_created":"2023-01-25T08:37:47Z","publisher":"Springer Science and Business Media LLC","year":"2005","issue":"7","user_id":"20179","department":[{"_id":"59"}],"_id":"39846","status":"public","type":"journal_article","doi":"10.1557/jmr.2004.0267","author":[{"full_name":"Pannemann, Ch.","last_name":"Pannemann","first_name":"Ch."},{"full_name":"Diekmann, T.","last_name":"Diekmann","first_name":"T."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"}],"volume":19,"date_updated":"2023-03-21T10:06:18Z","citation":{"apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2005). Degradation of organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>, <i>19</i>(7), 1999–2002. <a href=\"https://doi.org/10.1557/jmr.2004.0267\">https://doi.org/10.1557/jmr.2004.0267</a>","mla":"Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>.","short":"Ch. Pannemann, T. Diekmann, U. 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Diekmann, and Ulrich Hilleringmann. “Degradation of Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i> 19, no. 7 (2005): 1999–2002. <a href=\"https://doi.org/10.1557/jmr.2004.0267\">https://doi.org/10.1557/jmr.2004.0267</a>.","ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Degradation of organic field-effect transistors made of pentacene,” <i>Journal of Materials Research</i>, vol. 19, no. 7, pp. 1999–2002, 2005, doi: <a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>.","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>. 2005;19(7):1999-2002. doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>","apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2005). Degradation of organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>, <i>19</i>(7), 1999–2002. <a href=\"https://doi.org/10.1557/jmr.2004.0267\">https://doi.org/10.1557/jmr.2004.0267</a>","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2005, title={Degradation of organic field-effect transistors made of pentacene}, volume={19}, DOI={<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>}, number={7}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2005}, pages={1999–2002} }","mla":"Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>.","short":"Ch. Pannemann, T. Diekmann, U. 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Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>","lang":"eng"}],"language":[{"iso":"eng"}],"keyword":["Mechanical Engineering","Mechanics of Materials","Condensed Matter Physics","General Materials Science"]},{"date_updated":"2023-01-07T11:23:31Z","publisher":"Society of Rheology","date_created":"2023-01-06T13:15:08Z","author":[{"first_name":"Ryan J.","full_name":"Cormier, Ryan J.","last_name":"Cormier"},{"first_name":"Claudia","full_name":"Schmidt, Claudia","id":"466","last_name":"Schmidt","orcid":"0000-0003-3179-9997"},{"last_name":"Callaghan","full_name":"Callaghan, Paul T.","first_name":"Paul T."}],"volume":48,"title":"Director reorientation of a side-chain liquid crystalline polymer under extensional flow","doi":"10.1122/1.1753278","publication_status":"published","publication_identifier":{"issn":["0148-6055","1520-8516"]},"quality_controlled":"1","issue":"4","year":"2004","citation":{"chicago":"Cormier, Ryan J., Claudia Schmidt, and Paul T. 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