@article{4555,
  abstract     = {{Semiconductor microdiscs are promising for applications in photonics and quantum-information processing, such as efficient solid-state-based single-photon emitters. Strain in the multilayer structure of those devices has an important influence on their optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence measurements of microdiscs reveal substantially broadened emission lines with a shift to lower energy at the undercut part of microdiscs, indicating local relaxation in this area. The distribution of the strain in the microdiscs is obtained from an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs is free of defects.}},
  author       = {{Panfilova, M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}},
  issn         = {{0026-2692}},
  journal      = {{Microelectronics Journal}},
  keywords     = {{Raman, Photoluminescence, Microdisc, ZnSe}},
  number       = {{2}},
  pages        = {{221--223}},
  publisher    = {{Elsevier BV}},
  title        = {{{Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs}}},
  doi          = {{10.1016/j.mejo.2008.07.056}},
  volume       = {{40}},
  year         = {{2008}},
}