---
_id: '4379'
abstract:
- lang: eng
text: Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers
with an off orientation of 6º towards < 111> by means of electrochemical etching
in ethanoic-based HF electrolytes. These substrates are of interest for the epitaxial
growth of III–V compound semiconductor stacks on their top for the production
of multi-junction solar cells and very thin electronic devices. We demonstrate
transfer of porous layers after an annealing process in hydrogen atmosphere. Electron
Back-Scatter Diffraction analysis confirms that the substrate orientation is conserved
during the etching and annealing steps. Confocal μ-Raman spectroscopy analysis
shows a decrease in the Raman signal intensity after etching and a subsequent
increase after annealing while no shift is observed. By means of Atomic Force
Microscopy, analysis the surface appearance after the etching and annealing steps
can be visualized. The mean surface roughness varies during the process from 0.55
nm for the unprocessed wafers to 0.27 nm after etching and 0.78 nm after annealing.
The decrease of average roughness after etching is caused by an electropolishing
step prior to porous formation. Despite of slight increase of mean surface roughness
after annealing the samples are still appropriate for high quality epitaxial growth
and subsequent lift-off.
article_type: original
author:
- first_name: E.
full_name: Garralaga Rojas, E.
last_name: Garralaga Rojas
- first_name: B.
full_name: Terheiden, B.
last_name: Terheiden
- first_name: H.
full_name: Plagwitz, H.
last_name: Plagwitz
- first_name: J.
full_name: Hensen, J.
last_name: Hensen
- first_name: V.
full_name: Wiedemeier, V.
last_name: Wiedemeier
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: R.
full_name: Brendel, R.
last_name: Brendel
citation:
ama: Garralaga Rojas E, Terheiden B, Plagwitz H, et al. Lift-off of mesoporous layers
by electrochemical etching on Si (100) substrates with miscut of 6° off towards
(111). Thin Solid Films. 2011;520(1):606-609. doi:10.1016/j.tsf.2011.07.063
apa: Garralaga Rojas, E., Terheiden, B., Plagwitz, H., Hensen, J., Wiedemeier, V.,
Berth, G., … Brendel, R. (2011). Lift-off of mesoporous layers by electrochemical
etching on Si (100) substrates with miscut of 6° off towards (111). Thin Solid
Films, 520(1), 606–609. https://doi.org/10.1016/j.tsf.2011.07.063
bibtex: '@article{Garralaga Rojas_Terheiden_Plagwitz_Hensen_Wiedemeier_Berth_Zrenner_Brendel_2011,
title={Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates
with miscut of 6° off towards (111)}, volume={520}, DOI={10.1016/j.tsf.2011.07.063},
number={1}, journal={Thin Solid Films}, publisher={Elsevier BV}, author={Garralaga
Rojas, E. and Terheiden, B. and Plagwitz, H. and Hensen, J. and Wiedemeier, V.
and Berth, Gerhard and Zrenner, Artur and Brendel, R.}, year={2011}, pages={606–609}
}'
chicago: 'Garralaga Rojas, E., B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier,
Gerhard Berth, Artur Zrenner, and R. Brendel. “Lift-off of Mesoporous Layers by
Electrochemical Etching on Si (100) Substrates with Miscut of 6° off towards (111).”
Thin Solid Films 520, no. 1 (2011): 606–9. https://doi.org/10.1016/j.tsf.2011.07.063.'
ieee: E. Garralaga Rojas et al., “Lift-off of mesoporous layers by electrochemical
etching on Si (100) substrates with miscut of 6° off towards (111),” Thin Solid
Films, vol. 520, no. 1, pp. 606–609, 2011.
mla: Garralaga Rojas, E., et al. “Lift-off of Mesoporous Layers by Electrochemical
Etching on Si (100) Substrates with Miscut of 6° off towards (111).” Thin Solid
Films, vol. 520, no. 1, Elsevier BV, 2011, pp. 606–09, doi:10.1016/j.tsf.2011.07.063.
short: E. Garralaga Rojas, B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier,
G. Berth, A. Zrenner, R. Brendel, Thin Solid Films 520 (2011) 606–609.
date_created: 2018-09-11T14:21:12Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.tsf.2011.07.063
intvolume: ' 520'
issue: '1'
keyword:
- Porous Si
- Layer transfer
- Thin-film
- Photovoltaics
language:
- iso: eng
page: 606-609
publication: Thin Solid Films
publication_identifier:
issn:
- 0040-6090
publication_status: published
publisher: Elsevier BV
status: public
title: Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates
with miscut of 6° off towards (111)
type: journal_article
user_id: '49428'
volume: 520
year: '2011'
...