[{"status":"public","page":"778-782","publisher":"Wiley","_id":"4240","user_id":"14931","volume":253,"citation":{"ieee":"M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” <i>physica status solidi (b)</i>, vol. 253, no. 4, pp. 778–782, 2016, doi: <a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>.","apa":"Rüsing, M., Wecker, T., Berth, G., As, D. J., &#38; Zrenner, A. (2016). Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. <i>Physica Status Solidi (b)</i>, <i>253</i>(4), 778–782. <a href=\"https://doi.org/10.1002/pssb.201552592\">https://doi.org/10.1002/pssb.201552592</a>","chicago":"Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i> 253, no. 4 (2016): 778–82. <a href=\"https://doi.org/10.1002/pssb.201552592\">https://doi.org/10.1002/pssb.201552592</a>.","short":"M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi (b) 253 (2016) 778–782.","mla":"Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i>, vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>.","bibtex":"@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253}, DOI={<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>}, number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing, Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur}, year={2016}, pages={778–782} }","ama":"Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. <i>physica status solidi (b)</i>. 2016;253(4):778-782. doi:<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>"},"project":[{"_id":"53","grant_number":"231447078","name":"TRR 142"},{"name":"TRR 142 - Project Area B","_id":"55"},{"name":"TRR 142 - Subproject B3","grant_number":"231447078","_id":"68"}],"title":"Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC","year":"2016","publication_identifier":{"issn":["0370-1972"]},"author":[{"id":"22501","first_name":"Michael","orcid":"0000-0003-4682-4577","last_name":"Rüsing","full_name":"Rüsing, Michael"},{"full_name":"Wecker, T.","first_name":"T.","last_name":"Wecker"},{"id":"53","last_name":"Berth","first_name":"Gerhard","full_name":"Berth, Gerhard"},{"full_name":"As, Donat Josef","first_name":"Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","id":"14"},{"id":"606","full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur"}],"date_updated":"2023-10-09T08:48:35Z","publication_status":"published","intvolume":"       253","article_type":"original","language":[{"iso":"eng"}],"doi":"10.1002/pssb.201552592","issue":"4","publication":"physica status solidi (b)","abstract":[{"lang":"eng","text":"Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well-formed c-GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Ramanspectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films."}],"date_created":"2018-08-29T08:24:01Z","type":"journal_article","keyword":["cubic gallium nitride","dislocation density","HRXRD","Raman spectroscopy"],"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}]},{"citation":{"bibtex":"@article{Berth_Hahn_Wiedemeier_Zrenner_Sanna_Schmidt_2011, title={Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy}, volume={420}, DOI={<a href=\"https://doi.org/10.1080/00150193.2011.594774\">10.1080/00150193.2011.594774</a>}, number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Berth, Gerhard and Hahn, Wjatscheslaw and Wiedemeier, Volker and Zrenner, Artur and Sanna, Simone and Schmidt, Wolf Gero}, year={2011}, pages={44–48} }","ama":"Berth G, Hahn W, Wiedemeier V, Zrenner A, Sanna S, Schmidt WG. Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy. <i>Ferroelectrics</i>. 2011;420(1):44-48. doi:<a href=\"https://doi.org/10.1080/00150193.2011.594774\">10.1080/00150193.2011.594774</a>","mla":"Berth, Gerhard, et al. “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy.” <i>Ferroelectrics</i>, vol. 420, no. 1, Informa UK Limited, 2011, pp. 44–48, doi:<a href=\"https://doi.org/10.1080/00150193.2011.594774\">10.1080/00150193.2011.594774</a>.","chicago":"Berth, Gerhard, Wjatscheslaw Hahn, Volker Wiedemeier, Artur Zrenner, Simone Sanna, and Wolf Gero Schmidt. “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy.” <i>Ferroelectrics</i> 420, no. 1 (2011): 44–48. <a href=\"https://doi.org/10.1080/00150193.2011.594774\">https://doi.org/10.1080/00150193.2011.594774</a>.","short":"G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, W.G. Schmidt, Ferroelectrics 420 (2011) 44–48.","ieee":"G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, and W. G. Schmidt, “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy,” <i>Ferroelectrics</i>, vol. 420, no. 1, pp. 44–48, 2011.","apa":"Berth, G., Hahn, W., Wiedemeier, V., Zrenner, A., Sanna, S., &#38; Schmidt, W. G. (2011). Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy. <i>Ferroelectrics</i>, <i>420</i>(1), 44–48. <a href=\"https://doi.org/10.1080/00150193.2011.594774\">https://doi.org/10.1080/00150193.2011.594774</a>"},"page":"44-48","publisher":"Informa UK Limited","_id":"4377","user_id":"49428","volume":420,"status":"public","date_created":"2018-09-11T14:10:35Z","type":"journal_article","keyword":["Raman spectroscopy","ferroelectric domains","LiNbO3","confocal imaging"],"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"issue":"1","publication":"Ferroelectrics","abstract":[{"text":"Confocal Raman spectroscopy was performed as an archetype imaging method to study the ferroelectric domain structure of periodically poled lithium niobate. More precisely, the linkage out of spatial resolution and spectral information proved itself as very useful. Here a specific modulation of the Raman lines by the local variation of polarity and a non-symmetric measuring-signal across the domain structure were found, which allows for imaging of domain boundaries as well as oppositely orientated domains. The high potential of this method is demonstrated by the visualization of the ferroelectric domain structures based on various phonon modes.","lang":"eng"}],"language":[{"iso":"eng"}],"doi":"10.1080/00150193.2011.594774","year":"2011","title":"Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy","author":[{"id":"53","full_name":"Berth, Gerhard","last_name":"Berth","first_name":"Gerhard"},{"last_name":"Hahn","first_name":"Wjatscheslaw","full_name":"Hahn, Wjatscheslaw"},{"full_name":"Wiedemeier, Volker","last_name":"Wiedemeier","first_name":"Volker"},{"full_name":"Zrenner, Artur","first_name":"Artur","last_name":"Zrenner","orcid":"0000-0002-5190-0944","id":"606"},{"first_name":"Simone","last_name":"Sanna","full_name":"Sanna, Simone"},{"full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","first_name":"Wolf Gero"}],"publication_identifier":{"issn":["0015-0193","1563-5112"]},"date_updated":"2022-01-06T07:01:00Z","publication_status":"published","intvolume":"       420","article_type":"original"},{"volume":40,"user_id":"49428","publisher":"Elsevier BV","_id":"4555","page":"221-223","status":"public","citation":{"bibtex":"@article{Panfilova_Pawlis_Arens_de Vasconcellos_Berth_Hüsch_Wiedemeier_Zrenner_Lischka_2008, title={Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs}, volume={40}, DOI={<a href=\"https://doi.org/10.1016/j.mejo.2008.07.056\">10.1016/j.mejo.2008.07.056</a>}, number={2}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Panfilova, M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}, year={2008}, pages={221–223} }","ama":"Panfilova M, Pawlis A, Arens C, et al. Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. <i>Microelectronics Journal</i>. 2008;40(2):221-223. doi:<a href=\"https://doi.org/10.1016/j.mejo.2008.07.056\">10.1016/j.mejo.2008.07.056</a>","mla":"Panfilova, M., et al. “Micro-Raman Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.” <i>Microelectronics Journal</i>, vol. 40, no. 2, Elsevier BV, 2008, pp. 221–23, doi:<a href=\"https://doi.org/10.1016/j.mejo.2008.07.056\">10.1016/j.mejo.2008.07.056</a>.","short":"M. Panfilova, A. Pawlis, C. Arens, S.M. de Vasconcellos, G. Berth, K.P. Hüsch, V. Wiedemeier, A. Zrenner, K. Lischka, Microelectronics Journal 40 (2008) 221–223.","chicago":"Panfilova, M., A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, Gerhard Berth, K.P. Hüsch, V. Wiedemeier, Artur Zrenner, and K. Lischka. “Micro-Raman Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.” <i>Microelectronics Journal</i> 40, no. 2 (2008): 221–23. <a href=\"https://doi.org/10.1016/j.mejo.2008.07.056\">https://doi.org/10.1016/j.mejo.2008.07.056</a>.","ieee":"M. Panfilova <i>et al.</i>, “Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs,” <i>Microelectronics Journal</i>, vol. 40, no. 2, pp. 221–223, 2008.","apa":"Panfilova, M., Pawlis, A., Arens, C., de Vasconcellos, S. M., Berth, G., Hüsch, K. P., … Lischka, K. (2008). Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. <i>Microelectronics Journal</i>, <i>40</i>(2), 221–223. <a href=\"https://doi.org/10.1016/j.mejo.2008.07.056\">https://doi.org/10.1016/j.mejo.2008.07.056</a>"},"doi":"10.1016/j.mejo.2008.07.056","language":[{"iso":"eng"}],"intvolume":"        40","article_type":"original","date_updated":"2022-01-06T07:01:09Z","publication_status":"published","author":[{"full_name":"Panfilova, M.","last_name":"Panfilova","first_name":"M."},{"last_name":"Pawlis","first_name":"A.","full_name":"Pawlis, A."},{"full_name":"Arens, C.","first_name":"C.","last_name":"Arens"},{"full_name":"de Vasconcellos, S. Michaelis","first_name":"S. Michaelis","last_name":"de Vasconcellos"},{"full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth","id":"53"},{"full_name":"Hüsch, K.P.","last_name":"Hüsch","first_name":"K.P."},{"last_name":"Wiedemeier","first_name":"V.","full_name":"Wiedemeier, V."},{"first_name":"Artur","last_name":"Zrenner","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","id":"606"},{"first_name":"K.","last_name":"Lischka","full_name":"Lischka, K."}],"publication_identifier":{"issn":["0026-2692"]},"year":"2008","title":"Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"type":"journal_article","keyword":["Raman","Photoluminescence","Microdisc","ZnSe"],"date_created":"2018-09-20T13:39:35Z","abstract":[{"lang":"eng","text":"Semiconductor microdiscs are promising for applications in photonics and quantum-information processing, such as efficient solid-state-based single-photon emitters. Strain in the multilayer structure of those devices has an important influence on their optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence measurements of microdiscs reveal substantially broadened emission lines with a shift to lower energy at the undercut part of microdiscs, indicating local relaxation in this area. The distribution of the strain in the microdiscs is obtained from an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs is free of defects."}],"publication":"Microelectronics Journal","issue":"2"}]