--- _id: '4240' abstract: - lang: eng text: Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well-formed c-GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Ramanspectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films. article_type: original author: - first_name: Michael full_name: Rüsing, Michael id: '22501' last_name: Rüsing orcid: 0000-0003-4682-4577 - first_name: T. full_name: Wecker, T. last_name: Wecker - first_name: Gerhard full_name: Berth, Gerhard id: '53' last_name: Berth - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 citation: ama: Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. physica status solidi (b). 2016;253(4):778-782. doi:10.1002/pssb.201552592 apa: Rüsing, M., Wecker, T., Berth, G., As, D. J., & Zrenner, A. (2016). Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. Physica Status Solidi (b), 253(4), 778–782. https://doi.org/10.1002/pssb.201552592 bibtex: '@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253}, DOI={10.1002/pssb.201552592}, number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing, Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur}, year={2016}, pages={778–782} }' chicago: 'Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” Physica Status Solidi (b) 253, no. 4 (2016): 778–82. https://doi.org/10.1002/pssb.201552592.' ieee: 'M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” physica status solidi (b), vol. 253, no. 4, pp. 778–782, 2016, doi: 10.1002/pssb.201552592.' mla: Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” Physica Status Solidi (b), vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:10.1002/pssb.201552592. short: M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi (b) 253 (2016) 778–782. date_created: 2018-08-29T08:24:01Z date_updated: 2023-10-09T08:48:35Z department: - _id: '15' - _id: '230' - _id: '35' doi: 10.1002/pssb.201552592 intvolume: ' 253' issue: '4' keyword: - cubic gallium nitride - dislocation density - HRXRD - Raman spectroscopy language: - iso: eng page: 778-782 project: - _id: '53' grant_number: '231447078' name: TRR 142 - _id: '55' name: TRR 142 - Project Area B - _id: '68' grant_number: '231447078' name: TRR 142 - Subproject B3 publication: physica status solidi (b) publication_identifier: issn: - 0370-1972 publication_status: published publisher: Wiley status: public title: Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC type: journal_article user_id: '14931' volume: 253 year: '2016' ... --- _id: '4377' abstract: - lang: eng text: Confocal Raman spectroscopy was performed as an archetype imaging method to study the ferroelectric domain structure of periodically poled lithium niobate. More precisely, the linkage out of spatial resolution and spectral information proved itself as very useful. Here a specific modulation of the Raman lines by the local variation of polarity and a non-symmetric measuring-signal across the domain structure were found, which allows for imaging of domain boundaries as well as oppositely orientated domains. The high potential of this method is demonstrated by the visualization of the ferroelectric domain structures based on various phonon modes. article_type: original author: - first_name: Gerhard full_name: Berth, Gerhard id: '53' last_name: Berth - first_name: Wjatscheslaw full_name: Hahn, Wjatscheslaw last_name: Hahn - first_name: Volker full_name: Wiedemeier, Volker last_name: Wiedemeier - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 - first_name: Simone full_name: Sanna, Simone last_name: Sanna - first_name: Wolf Gero full_name: Schmidt, Wolf Gero last_name: Schmidt citation: ama: Berth G, Hahn W, Wiedemeier V, Zrenner A, Sanna S, Schmidt WG. Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy. Ferroelectrics. 2011;420(1):44-48. doi:10.1080/00150193.2011.594774 apa: Berth, G., Hahn, W., Wiedemeier, V., Zrenner, A., Sanna, S., & Schmidt, W. G. (2011). Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy. Ferroelectrics, 420(1), 44–48. https://doi.org/10.1080/00150193.2011.594774 bibtex: '@article{Berth_Hahn_Wiedemeier_Zrenner_Sanna_Schmidt_2011, title={Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy}, volume={420}, DOI={10.1080/00150193.2011.594774}, number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Berth, Gerhard and Hahn, Wjatscheslaw and Wiedemeier, Volker and Zrenner, Artur and Sanna, Simone and Schmidt, Wolf Gero}, year={2011}, pages={44–48} }' chicago: 'Berth, Gerhard, Wjatscheslaw Hahn, Volker Wiedemeier, Artur Zrenner, Simone Sanna, and Wolf Gero Schmidt. “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy.” Ferroelectrics 420, no. 1 (2011): 44–48. https://doi.org/10.1080/00150193.2011.594774.' ieee: G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, and W. G. Schmidt, “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy,” Ferroelectrics, vol. 420, no. 1, pp. 44–48, 2011. mla: Berth, Gerhard, et al. “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy.” Ferroelectrics, vol. 420, no. 1, Informa UK Limited, 2011, pp. 44–48, doi:10.1080/00150193.2011.594774. short: G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, W.G. Schmidt, Ferroelectrics 420 (2011) 44–48. date_created: 2018-09-11T14:10:35Z date_updated: 2022-01-06T07:01:00Z department: - _id: '15' - _id: '230' - _id: '35' doi: 10.1080/00150193.2011.594774 intvolume: ' 420' issue: '1' keyword: - Raman spectroscopy - ferroelectric domains - LiNbO3 - confocal imaging language: - iso: eng page: 44-48 publication: Ferroelectrics publication_identifier: issn: - 0015-0193 - 1563-5112 publication_status: published publisher: Informa UK Limited status: public title: Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy type: journal_article user_id: '49428' volume: 420 year: '2011' ... --- _id: '4555' abstract: - lang: eng text: Semiconductor microdiscs are promising for applications in photonics and quantum-information processing, such as efficient solid-state-based single-photon emitters. Strain in the multilayer structure of those devices has an important influence on their optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence measurements of microdiscs reveal substantially broadened emission lines with a shift to lower energy at the undercut part of microdiscs, indicating local relaxation in this area. The distribution of the strain in the microdiscs is obtained from an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs is free of defects. article_type: original author: - first_name: M. full_name: Panfilova, M. last_name: Panfilova - first_name: A. full_name: Pawlis, A. last_name: Pawlis - first_name: C. full_name: Arens, C. last_name: Arens - first_name: S. Michaelis full_name: de Vasconcellos, S. Michaelis last_name: de Vasconcellos - first_name: Gerhard full_name: Berth, Gerhard id: '53' last_name: Berth - first_name: K.P. full_name: Hüsch, K.P. last_name: Hüsch - first_name: V. full_name: Wiedemeier, V. last_name: Wiedemeier - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 - first_name: K. full_name: Lischka, K. last_name: Lischka citation: ama: Panfilova M, Pawlis A, Arens C, et al. Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. Microelectronics Journal. 2008;40(2):221-223. doi:10.1016/j.mejo.2008.07.056 apa: Panfilova, M., Pawlis, A., Arens, C., de Vasconcellos, S. M., Berth, G., Hüsch, K. P., … Lischka, K. (2008). Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. Microelectronics Journal, 40(2), 221–223. https://doi.org/10.1016/j.mejo.2008.07.056 bibtex: '@article{Panfilova_Pawlis_Arens_de Vasconcellos_Berth_Hüsch_Wiedemeier_Zrenner_Lischka_2008, title={Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs}, volume={40}, DOI={10.1016/j.mejo.2008.07.056}, number={2}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Panfilova, M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}, year={2008}, pages={221–223} }' chicago: 'Panfilova, M., A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, Gerhard Berth, K.P. Hüsch, V. Wiedemeier, Artur Zrenner, and K. Lischka. “Micro-Raman Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.” Microelectronics Journal 40, no. 2 (2008): 221–23. https://doi.org/10.1016/j.mejo.2008.07.056.' ieee: M. Panfilova et al., “Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs,” Microelectronics Journal, vol. 40, no. 2, pp. 221–223, 2008. mla: Panfilova, M., et al. “Micro-Raman Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.” Microelectronics Journal, vol. 40, no. 2, Elsevier BV, 2008, pp. 221–23, doi:10.1016/j.mejo.2008.07.056. short: M. Panfilova, A. Pawlis, C. Arens, S.M. de Vasconcellos, G. Berth, K.P. Hüsch, V. Wiedemeier, A. Zrenner, K. Lischka, Microelectronics Journal 40 (2008) 221–223. date_created: 2018-09-20T13:39:35Z date_updated: 2022-01-06T07:01:09Z department: - _id: '15' - _id: '230' - _id: '35' doi: 10.1016/j.mejo.2008.07.056 intvolume: ' 40' issue: '2' keyword: - Raman - Photoluminescence - Microdisc - ZnSe language: - iso: eng page: 221-223 publication: Microelectronics Journal publication_identifier: issn: - 0026-2692 publication_status: published publisher: Elsevier BV status: public title: Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs type: journal_article user_id: '49428' volume: 40 year: '2008' ...