---
_id: '4240'
abstract:
- lang: eng
text: Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction
(HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC
(001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The
layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis
reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for
growing layer thicknesses, which is caused by a partial compensation of defects.
The Raman characterization confirms well-formed c-GaN layers. A more detailed
examination of the longitudinal optical mode hints at a correlation of the FWHM
of the Raman mode with the dislocation density, which shows the possibility to
determine dislocation densities by Ramanspectroscopy on a micrometer scale, which
is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized
Raman spectra present an alternative way to determine layer thicknesses of thin
GaN films.
article_type: original
author:
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
- first_name: T.
full_name: Wecker, T.
last_name: Wecker
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and
HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. physica
status solidi (b). 2016;253(4):778-782. doi:10.1002/pssb.201552592
apa: Rüsing, M., Wecker, T., Berth, G., As, D. J., & Zrenner, A. (2016). Joint
Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown
on 3C-SiC. Physica Status Solidi (b), 253(4), 778–782. https://doi.org/10.1002/pssb.201552592
bibtex: '@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy
and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253},
DOI={10.1002/pssb.201552592},
number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing,
Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur},
year={2016}, pages={778–782} }'
chicago: 'Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner.
“Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers
Grown on 3C-SiC.” Physica Status Solidi (b) 253, no. 4 (2016): 778–82.
https://doi.org/10.1002/pssb.201552592.'
ieee: 'M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy
and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” physica
status solidi (b), vol. 253, no. 4, pp. 778–782, 2016, doi: 10.1002/pssb.201552592.'
mla: Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of
Cubic Gallium Nitride Layers Grown on 3C-SiC.” Physica Status Solidi (b),
vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:10.1002/pssb.201552592.
short: M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi
(b) 253 (2016) 778–782.
date_created: 2018-08-29T08:24:01Z
date_updated: 2023-10-09T08:48:35Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.201552592
intvolume: ' 253'
issue: '4'
keyword:
- cubic gallium nitride
- dislocation density
- HRXRD
- Raman spectroscopy
language:
- iso: eng
page: 778-782
project:
- _id: '53'
grant_number: '231447078'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '68'
grant_number: '231447078'
name: TRR 142 - Subproject B3
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers
grown on 3C-SiC
type: journal_article
user_id: '14931'
volume: 253
year: '2016'
...
---
_id: '4377'
abstract:
- lang: eng
text: Confocal Raman spectroscopy was performed as an archetype imaging method to
study the ferroelectric domain structure of periodically poled lithium niobate.
More precisely, the linkage out of spatial resolution and spectral information
proved itself as very useful. Here a specific modulation of the Raman lines by
the local variation of polarity and a non-symmetric measuring-signal across the
domain structure were found, which allows for imaging of domain boundaries as
well as oppositely orientated domains. The high potential of this method is demonstrated
by the visualization of the ferroelectric domain structures based on various phonon
modes.
article_type: original
author:
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Wjatscheslaw
full_name: Hahn, Wjatscheslaw
last_name: Hahn
- first_name: Volker
full_name: Wiedemeier, Volker
last_name: Wiedemeier
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Simone
full_name: Sanna, Simone
last_name: Sanna
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
last_name: Schmidt
citation:
ama: Berth G, Hahn W, Wiedemeier V, Zrenner A, Sanna S, Schmidt WG. Imaging of the
Ferroelectric Domain Structures by Confocal Raman Spectroscopy. Ferroelectrics.
2011;420(1):44-48. doi:10.1080/00150193.2011.594774
apa: Berth, G., Hahn, W., Wiedemeier, V., Zrenner, A., Sanna, S., & Schmidt,
W. G. (2011). Imaging of the Ferroelectric Domain Structures by Confocal Raman
Spectroscopy. Ferroelectrics, 420(1), 44–48. https://doi.org/10.1080/00150193.2011.594774
bibtex: '@article{Berth_Hahn_Wiedemeier_Zrenner_Sanna_Schmidt_2011, title={Imaging
of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy}, volume={420},
DOI={10.1080/00150193.2011.594774},
number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Berth,
Gerhard and Hahn, Wjatscheslaw and Wiedemeier, Volker and Zrenner, Artur and Sanna,
Simone and Schmidt, Wolf Gero}, year={2011}, pages={44–48} }'
chicago: 'Berth, Gerhard, Wjatscheslaw Hahn, Volker Wiedemeier, Artur Zrenner, Simone
Sanna, and Wolf Gero Schmidt. “Imaging of the Ferroelectric Domain Structures
by Confocal Raman Spectroscopy.” Ferroelectrics 420, no. 1 (2011): 44–48.
https://doi.org/10.1080/00150193.2011.594774.'
ieee: G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, and W. G. Schmidt,
“Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy,”
Ferroelectrics, vol. 420, no. 1, pp. 44–48, 2011.
mla: Berth, Gerhard, et al. “Imaging of the Ferroelectric Domain Structures by Confocal
Raman Spectroscopy.” Ferroelectrics, vol. 420, no. 1, Informa UK Limited,
2011, pp. 44–48, doi:10.1080/00150193.2011.594774.
short: G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, W.G. Schmidt, Ferroelectrics
420 (2011) 44–48.
date_created: 2018-09-11T14:10:35Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1080/00150193.2011.594774
intvolume: ' 420'
issue: '1'
keyword:
- Raman spectroscopy
- ferroelectric domains
- LiNbO3
- confocal imaging
language:
- iso: eng
page: 44-48
publication: Ferroelectrics
publication_identifier:
issn:
- 0015-0193
- 1563-5112
publication_status: published
publisher: Informa UK Limited
status: public
title: Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy
type: journal_article
user_id: '49428'
volume: 420
year: '2011'
...
---
_id: '4555'
abstract:
- lang: eng
text: Semiconductor microdiscs are promising for applications in photonics and quantum-information
processing, such as efficient solid-state-based single-photon emitters. Strain
in the multilayer structure of those devices has an important influence on their
optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe
microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence
measurements of microdiscs reveal substantially broadened emission lines with
a shift to lower energy at the undercut part of microdiscs, indicating local relaxation
in this area. The distribution of the strain in the microdiscs is obtained from
an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs
is free of defects.
article_type: original
author:
- first_name: M.
full_name: Panfilova, M.
last_name: Panfilova
- first_name: A.
full_name: Pawlis, A.
last_name: Pawlis
- first_name: C.
full_name: Arens, C.
last_name: Arens
- first_name: S. Michaelis
full_name: de Vasconcellos, S. Michaelis
last_name: de Vasconcellos
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: K.P.
full_name: Hüsch, K.P.
last_name: Hüsch
- first_name: V.
full_name: Wiedemeier, V.
last_name: Wiedemeier
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
citation:
ama: Panfilova M, Pawlis A, Arens C, et al. Micro-Raman imaging and micro-photoluminescence
measurements of strain in ZnMgSe/ZnSe microdiscs. Microelectronics Journal.
2008;40(2):221-223. doi:10.1016/j.mejo.2008.07.056
apa: Panfilova, M., Pawlis, A., Arens, C., de Vasconcellos, S. M., Berth, G., Hüsch,
K. P., … Lischka, K. (2008). Micro-Raman imaging and micro-photoluminescence measurements
of strain in ZnMgSe/ZnSe microdiscs. Microelectronics Journal, 40(2),
221–223. https://doi.org/10.1016/j.mejo.2008.07.056
bibtex: '@article{Panfilova_Pawlis_Arens_de Vasconcellos_Berth_Hüsch_Wiedemeier_Zrenner_Lischka_2008,
title={Micro-Raman imaging and micro-photoluminescence measurements of strain
in ZnMgSe/ZnSe microdiscs}, volume={40}, DOI={10.1016/j.mejo.2008.07.056},
number={2}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Panfilova,
M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard
and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}, year={2008},
pages={221–223} }'
chicago: 'Panfilova, M., A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, Gerhard
Berth, K.P. Hüsch, V. Wiedemeier, Artur Zrenner, and K. Lischka. “Micro-Raman
Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.”
Microelectronics Journal 40, no. 2 (2008): 221–23. https://doi.org/10.1016/j.mejo.2008.07.056.'
ieee: M. Panfilova et al., “Micro-Raman imaging and micro-photoluminescence
measurements of strain in ZnMgSe/ZnSe microdiscs,” Microelectronics Journal,
vol. 40, no. 2, pp. 221–223, 2008.
mla: Panfilova, M., et al. “Micro-Raman Imaging and Micro-Photoluminescence Measurements
of Strain in ZnMgSe/ZnSe Microdiscs.” Microelectronics Journal, vol. 40,
no. 2, Elsevier BV, 2008, pp. 221–23, doi:10.1016/j.mejo.2008.07.056.
short: M. Panfilova, A. Pawlis, C. Arens, S.M. de Vasconcellos, G. Berth, K.P. Hüsch,
V. Wiedemeier, A. Zrenner, K. Lischka, Microelectronics Journal 40 (2008) 221–223.
date_created: 2018-09-20T13:39:35Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.mejo.2008.07.056
intvolume: ' 40'
issue: '2'
keyword:
- Raman
- Photoluminescence
- Microdisc
- ZnSe
language:
- iso: eng
page: 221-223
publication: Microelectronics Journal
publication_identifier:
issn:
- 0026-2692
publication_status: published
publisher: Elsevier BV
status: public
title: Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe
microdiscs
type: journal_article
user_id: '49428'
volume: 40
year: '2008'
...