---
_id: '4240'
abstract:
- lang: eng
  text: Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction
    (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC
    (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The
    layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis
    reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for
    growing layer thicknesses, which is caused by a partial compensation of defects.
    The Raman characterization confirms well-formed c-GaN layers. A more detailed
    examination of the longitudinal optical mode hints at a correlation of the FWHM
    of the Raman mode with the dislocation density, which shows the possibility to
    determine dislocation densities by Ramanspectroscopy on a micrometer scale, which
    is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized
    Raman spectra present an alternative way to determine layer thicknesses of thin
    GaN films.
article_type: original
author:
- first_name: Michael
  full_name: Rüsing, Michael
  id: '22501'
  last_name: Rüsing
  orcid: 0000-0003-4682-4577
- first_name: T.
  full_name: Wecker, T.
  last_name: Wecker
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
citation:
  ama: Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and
    HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. <i>physica
    status solidi (b)</i>. 2016;253(4):778-782. doi:<a href="https://doi.org/10.1002/pssb.201552592">10.1002/pssb.201552592</a>
  apa: Rüsing, M., Wecker, T., Berth, G., As, D. J., &#38; Zrenner, A. (2016). Joint
    Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown
    on 3C-SiC. <i>Physica Status Solidi (b)</i>, <i>253</i>(4), 778–782. <a href="https://doi.org/10.1002/pssb.201552592">https://doi.org/10.1002/pssb.201552592</a>
  bibtex: '@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy
    and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253},
    DOI={<a href="https://doi.org/10.1002/pssb.201552592">10.1002/pssb.201552592</a>},
    number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing,
    Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur},
    year={2016}, pages={778–782} }'
  chicago: 'Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner.
    “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers
    Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i> 253, no. 4 (2016): 778–82.
    <a href="https://doi.org/10.1002/pssb.201552592">https://doi.org/10.1002/pssb.201552592</a>.'
  ieee: 'M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy
    and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” <i>physica
    status solidi (b)</i>, vol. 253, no. 4, pp. 778–782, 2016, doi: <a href="https://doi.org/10.1002/pssb.201552592">10.1002/pssb.201552592</a>.'
  mla: Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of
    Cubic Gallium Nitride Layers Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i>,
    vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:<a href="https://doi.org/10.1002/pssb.201552592">10.1002/pssb.201552592</a>.
  short: M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi
    (b) 253 (2016) 778–782.
date_created: 2018-08-29T08:24:01Z
date_updated: 2023-10-09T08:48:35Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.201552592
intvolume: '       253'
issue: '4'
keyword:
- cubic gallium nitride
- dislocation density
- HRXRD
- Raman spectroscopy
language:
- iso: eng
page: 778-782
project:
- _id: '53'
  grant_number: '231447078'
  name: TRR 142
- _id: '55'
  name: TRR 142 - Project Area B
- _id: '68'
  grant_number: '231447078'
  name: TRR 142 - Subproject B3
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers
  grown on 3C-SiC
type: journal_article
user_id: '14931'
volume: 253
year: '2016'
...
---
_id: '4377'
abstract:
- lang: eng
  text: Confocal Raman spectroscopy was performed as an archetype imaging method to
    study the ferroelectric domain structure of periodically poled lithium niobate.
    More precisely, the linkage out of spatial resolution and spectral information
    proved itself as very useful. Here a specific modulation of the Raman lines by
    the local variation of polarity and a non-symmetric measuring-signal across the
    domain structure were found, which allows for imaging of domain boundaries as
    well as oppositely orientated domains. The high potential of this method is demonstrated
    by the visualization of the ferroelectric domain structures based on various phonon
    modes.
article_type: original
author:
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: Wjatscheslaw
  full_name: Hahn, Wjatscheslaw
  last_name: Hahn
- first_name: Volker
  full_name: Wiedemeier, Volker
  last_name: Wiedemeier
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: Simone
  full_name: Sanna, Simone
  last_name: Sanna
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  last_name: Schmidt
citation:
  ama: Berth G, Hahn W, Wiedemeier V, Zrenner A, Sanna S, Schmidt WG. Imaging of the
    Ferroelectric Domain Structures by Confocal Raman Spectroscopy. <i>Ferroelectrics</i>.
    2011;420(1):44-48. doi:<a href="https://doi.org/10.1080/00150193.2011.594774">10.1080/00150193.2011.594774</a>
  apa: Berth, G., Hahn, W., Wiedemeier, V., Zrenner, A., Sanna, S., &#38; Schmidt,
    W. G. (2011). Imaging of the Ferroelectric Domain Structures by Confocal Raman
    Spectroscopy. <i>Ferroelectrics</i>, <i>420</i>(1), 44–48. <a href="https://doi.org/10.1080/00150193.2011.594774">https://doi.org/10.1080/00150193.2011.594774</a>
  bibtex: '@article{Berth_Hahn_Wiedemeier_Zrenner_Sanna_Schmidt_2011, title={Imaging
    of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy}, volume={420},
    DOI={<a href="https://doi.org/10.1080/00150193.2011.594774">10.1080/00150193.2011.594774</a>},
    number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Berth,
    Gerhard and Hahn, Wjatscheslaw and Wiedemeier, Volker and Zrenner, Artur and Sanna,
    Simone and Schmidt, Wolf Gero}, year={2011}, pages={44–48} }'
  chicago: 'Berth, Gerhard, Wjatscheslaw Hahn, Volker Wiedemeier, Artur Zrenner, Simone
    Sanna, and Wolf Gero Schmidt. “Imaging of the Ferroelectric Domain Structures
    by Confocal Raman Spectroscopy.” <i>Ferroelectrics</i> 420, no. 1 (2011): 44–48.
    <a href="https://doi.org/10.1080/00150193.2011.594774">https://doi.org/10.1080/00150193.2011.594774</a>.'
  ieee: G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, and W. G. Schmidt,
    “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy,”
    <i>Ferroelectrics</i>, vol. 420, no. 1, pp. 44–48, 2011.
  mla: Berth, Gerhard, et al. “Imaging of the Ferroelectric Domain Structures by Confocal
    Raman Spectroscopy.” <i>Ferroelectrics</i>, vol. 420, no. 1, Informa UK Limited,
    2011, pp. 44–48, doi:<a href="https://doi.org/10.1080/00150193.2011.594774">10.1080/00150193.2011.594774</a>.
  short: G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, W.G. Schmidt, Ferroelectrics
    420 (2011) 44–48.
date_created: 2018-09-11T14:10:35Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1080/00150193.2011.594774
intvolume: '       420'
issue: '1'
keyword:
- Raman spectroscopy
- ferroelectric domains
- LiNbO3
- confocal imaging
language:
- iso: eng
page: 44-48
publication: Ferroelectrics
publication_identifier:
  issn:
  - 0015-0193
  - 1563-5112
publication_status: published
publisher: Informa UK Limited
status: public
title: Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy
type: journal_article
user_id: '49428'
volume: 420
year: '2011'
...
---
_id: '4555'
abstract:
- lang: eng
  text: Semiconductor microdiscs are promising for applications in photonics and quantum-information
    processing, such as efficient solid-state-based single-photon emitters. Strain
    in the multilayer structure of those devices has an important influence on their
    optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe
    microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence
    measurements of microdiscs reveal substantially broadened emission lines with
    a shift to lower energy at the undercut part of microdiscs, indicating local relaxation
    in this area. The distribution of the strain in the microdiscs is obtained from
    an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs
    is free of defects.
article_type: original
author:
- first_name: M.
  full_name: Panfilova, M.
  last_name: Panfilova
- first_name: A.
  full_name: Pawlis, A.
  last_name: Pawlis
- first_name: C.
  full_name: Arens, C.
  last_name: Arens
- first_name: S. Michaelis
  full_name: de Vasconcellos, S. Michaelis
  last_name: de Vasconcellos
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: K.P.
  full_name: Hüsch, K.P.
  last_name: Hüsch
- first_name: V.
  full_name: Wiedemeier, V.
  last_name: Wiedemeier
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: K.
  full_name: Lischka, K.
  last_name: Lischka
citation:
  ama: Panfilova M, Pawlis A, Arens C, et al. Micro-Raman imaging and micro-photoluminescence
    measurements of strain in ZnMgSe/ZnSe microdiscs. <i>Microelectronics Journal</i>.
    2008;40(2):221-223. doi:<a href="https://doi.org/10.1016/j.mejo.2008.07.056">10.1016/j.mejo.2008.07.056</a>
  apa: Panfilova, M., Pawlis, A., Arens, C., de Vasconcellos, S. M., Berth, G., Hüsch,
    K. P., … Lischka, K. (2008). Micro-Raman imaging and micro-photoluminescence measurements
    of strain in ZnMgSe/ZnSe microdiscs. <i>Microelectronics Journal</i>, <i>40</i>(2),
    221–223. <a href="https://doi.org/10.1016/j.mejo.2008.07.056">https://doi.org/10.1016/j.mejo.2008.07.056</a>
  bibtex: '@article{Panfilova_Pawlis_Arens_de Vasconcellos_Berth_Hüsch_Wiedemeier_Zrenner_Lischka_2008,
    title={Micro-Raman imaging and micro-photoluminescence measurements of strain
    in ZnMgSe/ZnSe microdiscs}, volume={40}, DOI={<a href="https://doi.org/10.1016/j.mejo.2008.07.056">10.1016/j.mejo.2008.07.056</a>},
    number={2}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Panfilova,
    M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard
    and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}, year={2008},
    pages={221–223} }'
  chicago: 'Panfilova, M., A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, Gerhard
    Berth, K.P. Hüsch, V. Wiedemeier, Artur Zrenner, and K. Lischka. “Micro-Raman
    Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.”
    <i>Microelectronics Journal</i> 40, no. 2 (2008): 221–23. <a href="https://doi.org/10.1016/j.mejo.2008.07.056">https://doi.org/10.1016/j.mejo.2008.07.056</a>.'
  ieee: M. Panfilova <i>et al.</i>, “Micro-Raman imaging and micro-photoluminescence
    measurements of strain in ZnMgSe/ZnSe microdiscs,” <i>Microelectronics Journal</i>,
    vol. 40, no. 2, pp. 221–223, 2008.
  mla: Panfilova, M., et al. “Micro-Raman Imaging and Micro-Photoluminescence Measurements
    of Strain in ZnMgSe/ZnSe Microdiscs.” <i>Microelectronics Journal</i>, vol. 40,
    no. 2, Elsevier BV, 2008, pp. 221–23, doi:<a href="https://doi.org/10.1016/j.mejo.2008.07.056">10.1016/j.mejo.2008.07.056</a>.
  short: M. Panfilova, A. Pawlis, C. Arens, S.M. de Vasconcellos, G. Berth, K.P. Hüsch,
    V. Wiedemeier, A. Zrenner, K. Lischka, Microelectronics Journal 40 (2008) 221–223.
date_created: 2018-09-20T13:39:35Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.mejo.2008.07.056
intvolume: '        40'
issue: '2'
keyword:
- Raman
- Photoluminescence
- Microdisc
- ZnSe
language:
- iso: eng
page: 221-223
publication: Microelectronics Journal
publication_identifier:
  issn:
  - 0026-2692
publication_status: published
publisher: Elsevier BV
status: public
title: Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe
  microdiscs
type: journal_article
user_id: '49428'
volume: 40
year: '2008'
...