[{"place":"Sankt Augustin","project":[{"name":"TRR 285:  Methodenentwicklung zur mechanischen Fügbarkeit in wandlungsfähigen Prozessketten","_id":"130"},{"_id":"131","name":"TRR 285 - Project Area A"},{"_id":"136","name":"TRR 285 - Subproject A02"}],"quality_controlled":"1","citation":{"mla":"Neuser, Moritz, et al. “Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen.” <i>Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen</i>, vol. 43, Deutsche Gesellschaft für Materialkunde (DGM), 2025, pp. 454–59.","bibtex":"@inproceedings{Neuser_Cichon_Hoyer_Schaper_2025, place={Sankt Augustin}, title={Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen}, volume={43}, booktitle={Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen}, publisher={Deutsche Gesellschaft für Materialkunde (DGM)}, author={Neuser, Moritz and Cichon, Gerrit and Hoyer, Kay-Peter and Schaper, Mirko}, year={2025}, pages={454–459} }","ama":"Neuser M, Cichon G, Hoyer K-P, Schaper M. Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen. In: <i>Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen</i>. Vol 43. Deutsche Gesellschaft für Materialkunde (DGM); 2025:454-459.","ieee":"M. Neuser, G. Cichon, K.-P. Hoyer, and M. Schaper, “Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen,” in <i>Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen</i>, Dresden, 2025, vol. 43, pp. 454–459.","apa":"Neuser, M., Cichon, G., Hoyer, K.-P., &#38; Schaper, M. (2025). Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen. <i>Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen</i>, <i>43</i>, 454–459.","short":"M. Neuser, G. Cichon, K.-P. Hoyer, M. Schaper, in: Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen, Deutsche Gesellschaft für Materialkunde (DGM), Sankt Augustin, 2025, pp. 454–459.","chicago":"Neuser, Moritz, Gerrit Cichon, Kay-Peter Hoyer, and Mirko Schaper. “Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen.” In <i>Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen</i>, 43:454–59. Sankt Augustin: Deutsche Gesellschaft für Materialkunde (DGM), 2025."},"volume":43,"user_id":"32340","publisher":"Deutsche Gesellschaft für Materialkunde (DGM)","_id":"62725","page":"454 - 459","conference":{"end_date":"2025-11-28","location":"Dresden","start_date":"2025-11-27","name":"Werkstoffprüfung - 43. Vortrags- und Diskussionstagung Werkstoffprüfung 2025"},"status":"public","department":[{"_id":"43"},{"_id":"9"},{"_id":"158"},{"_id":"321"}],"keyword":["Bildauswertendes Verfahren","Mikrostrukturanalyse","AlSi-System","Si-Morphologie"],"type":"conference","date_created":"2025-12-01T13:46:42Z","abstract":[{"lang":"ger","text":"Aluminium-Silizium-Legierungen (AlSi) werden insbesondere bei der gießtechnischen\r\nHerstellung von Leichtbaukomponenten für Fahrzeuge verwendet. Dieses Legierungssystem hat hervorragende\r\nGießeigenschaften bei gleichzeitig akzeptablen mechanischen Eigenschaften. Aufgrund des hohen\r\nSilizium-(Si)-Gehaltes, wodurch die Volumenkontraktion im Phasenübergang von flüssig-fest nahezu\r\nunterbunden wird, neigen AlSi-Legierungen dazu, feinere oder gröbere Si-Platten bei unterschiedlichen\r\nErstarrungsgeschwindigkeiten zu bilden. Um die mechanischen Eigenschaften zu verbessern, werden\r\ndem Legierungssystem in der Schmelzphase entweder Natrium (Na) oder Strontium (Sr) zugesetzt. Dies\r\nhat zur Folge, dass sich eine fein lamellare Si-Morphologie bei der Erstarrung ausbildet; dies kann ebenfalls\r\ndurch hohe Erstarrungsgeschwindigkeiten erreicht werden. Ein nachfolgendes Lösungsglühen bewirkt\r\neine Sphäroidisierung der Si-Partikel und dient der Steigerung der Duktilität. Aktuell fehlen fundierte\r\nErkenntnisse zur Ausprägung der Si-Morphologie in Abhängigkeit der Erstarrungsgeschwindigkeit oder\r\ninfolge einer Wärmebehandlung. Vor diesem Hintergrund werden in dieser Studie verschiedene Behandlungsparameter\r\nin Bezug auf das Einformverhalten der Si-Partikel mit einem bildauswertenden Verfahren\r\nevaluiert sowie unter Bezug auf verschiedene chemische Zusammensetzungen miteinander korreliert."},{"text":"Aluminium-silicon alloys (AlSi) are used in the casting of lightweight vehicle components. This\r\nalloy system has excellent casting properties accompanied by acceptable mechanical properties. Due to\r\nthe high silicon (Si) content, which almost completely prevents volume contraction during the liquid-solid\r\nphase transition, AlSi alloys tend to form finer or coarser Si plates at different solidification rates. To\r\nimprove the mechanical properties, either sodium (Na) or strontium (Sr) is added to the alloy system in\r\nthe melting phase. This results in the formation of a fine lamellar Si morphology during solidification, which\r\ncan also be achieved by high solidification rates. Subsequent solution annealing causes spheroidisation\r\nof the Si particles and increases ductility. Currently, there is a lack in scientific knowledge regarding the\r\nSi-morphology as a function of solidification rate or as a result of heat treatment. Therefore, this study\r\nevaluates various treatment parameters in relation to the shaping behaviour of Si particles using an image\r\nanalysis method and correlates them with different chemical compositions.","lang":"eng"}],"publication":"Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen","alternative_title":["Image analysis method for evaluating the microstructure of AlSi-alloys"],"language":[{"iso":"ger"}],"intvolume":"        43","publication_status":"published","date_updated":"2025-12-01T13:46:53Z","publication_identifier":{"isbn":["978-3-88355-454-9"]},"author":[{"id":"32340","last_name":"Neuser","first_name":"Moritz","full_name":"Neuser, Moritz"},{"last_name":"Cichon","first_name":"Gerrit","full_name":"Cichon, Gerrit"},{"id":"48411","last_name":"Hoyer","first_name":"Kay-Peter","full_name":"Hoyer, Kay-Peter"},{"id":"43720","last_name":"Schaper","first_name":"Mirko","full_name":"Schaper, Mirko"}],"year":"2025","title":"Bildauswertendes Verfahren zur Evaluierung der Mikrostruktur von AlSi-Systemen"},{"user_id":"49428","volume":520,"page":"606-609","publisher":"Elsevier BV","_id":"4379","status":"public","citation":{"mla":"Garralaga Rojas, E., et al. “Lift-off of Mesoporous Layers by Electrochemical Etching on Si (100) Substrates with Miscut of 6° off towards (111).” <i>Thin Solid Films</i>, vol. 520, no. 1, Elsevier BV, 2011, pp. 606–09, doi:<a href=\"https://doi.org/10.1016/j.tsf.2011.07.063\">10.1016/j.tsf.2011.07.063</a>.","bibtex":"@article{Garralaga Rojas_Terheiden_Plagwitz_Hensen_Wiedemeier_Berth_Zrenner_Brendel_2011, title={Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111)}, volume={520}, DOI={<a href=\"https://doi.org/10.1016/j.tsf.2011.07.063\">10.1016/j.tsf.2011.07.063</a>}, number={1}, journal={Thin Solid Films}, publisher={Elsevier BV}, author={Garralaga Rojas, E. and Terheiden, B. and Plagwitz, H. and Hensen, J. and Wiedemeier, V. and Berth, Gerhard and Zrenner, Artur and Brendel, R.}, year={2011}, pages={606–609} }","ama":"Garralaga Rojas E, Terheiden B, Plagwitz H, et al. Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111). <i>Thin Solid Films</i>. 2011;520(1):606-609. doi:<a href=\"https://doi.org/10.1016/j.tsf.2011.07.063\">10.1016/j.tsf.2011.07.063</a>","ieee":"E. Garralaga Rojas <i>et al.</i>, “Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111),” <i>Thin Solid Films</i>, vol. 520, no. 1, pp. 606–609, 2011.","apa":"Garralaga Rojas, E., Terheiden, B., Plagwitz, H., Hensen, J., Wiedemeier, V., Berth, G., … Brendel, R. (2011). Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111). <i>Thin Solid Films</i>, <i>520</i>(1), 606–609. <a href=\"https://doi.org/10.1016/j.tsf.2011.07.063\">https://doi.org/10.1016/j.tsf.2011.07.063</a>","chicago":"Garralaga Rojas, E., B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier, Gerhard Berth, Artur Zrenner, and R. Brendel. “Lift-off of Mesoporous Layers by Electrochemical Etching on Si (100) Substrates with Miscut of 6° off towards (111).” <i>Thin Solid Films</i> 520, no. 1 (2011): 606–9. <a href=\"https://doi.org/10.1016/j.tsf.2011.07.063\">https://doi.org/10.1016/j.tsf.2011.07.063</a>.","short":"E. Garralaga Rojas, B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier, G. Berth, A. Zrenner, R. Brendel, Thin Solid Films 520 (2011) 606–609."},"doi":"10.1016/j.tsf.2011.07.063","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:01:00Z","article_type":"original","intvolume":"       520","title":"Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111)","year":"2011","publication_identifier":{"issn":["0040-6090"]},"author":[{"full_name":"Garralaga Rojas, E.","last_name":"Garralaga Rojas","first_name":"E."},{"first_name":"B.","last_name":"Terheiden","full_name":"Terheiden, B."},{"first_name":"H.","last_name":"Plagwitz","full_name":"Plagwitz, H."},{"full_name":"Hensen, J.","last_name":"Hensen","first_name":"J."},{"last_name":"Wiedemeier","first_name":"V.","full_name":"Wiedemeier, V."},{"id":"53","full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth"},{"full_name":"Zrenner, Artur","last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur","id":"606"},{"last_name":"Brendel","first_name":"R.","full_name":"Brendel, R."}],"type":"journal_article","keyword":["Porous Si","Layer transfer","Thin-film","Photovoltaics"],"department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"date_created":"2018-09-11T14:21:12Z","abstract":[{"lang":"eng","text":"Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers with an off orientation of 6º towards < 111> by means of electrochemical etching in ethanoic-based HF electrolytes. These substrates are of interest for the epitaxial growth of III–V compound semiconductor stacks on their top for the production of multi-junction solar cells and very thin electronic devices. We demonstrate transfer of porous layers after an annealing process in hydrogen atmosphere. Electron Back-Scatter Diffraction analysis confirms that the substrate orientation is conserved during the etching and annealing steps. Confocal μ-Raman spectroscopy analysis shows a decrease in the Raman signal intensity after etching and a subsequent increase after annealing while no shift is observed. By means of Atomic Force Microscopy, analysis the surface appearance after the etching and annealing steps can be visualized. The mean surface roughness varies during the process from 0.55 nm for the unprocessed wafers to 0.27 nm after etching and 0.78 nm after annealing. The decrease of average roughness after etching is caused by an electropolishing step prior to porous formation. Despite of slight increase of mean surface roughness after annealing the samples are still appropriate for high quality epitaxial growth and subsequent lift-off."}],"issue":"1","publication":"Thin Solid Films"}]