@article{4276,
  abstract     = {{We analyse an InAs/GaAs-based electric field tunable single quantum dot diode with a thin tunnelling barrier between a
buried n þ -back contact and a quantum dot layer. In voltage- dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between confined holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states.}},
  author       = {{Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{excitons, GaAs, InAs, quantum dots, spatially indirect transitions, Stark shift}},
  number       = {{3}},
  pages        = {{437--441}},
  publisher    = {{Wiley}},
  title        = {{{Spatially indirect transitions in electric field tunable quantum dot diodes}}},
  doi          = {{10.1002/pssb.201552591}},
  volume       = {{253}},
  year         = {{2015}},
}