[{"type":"journal_article","publication":"Microelectronic Engineering","status":"public","_id":"39851","user_id":"20179","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"year":"2003","citation":{"chicago":"Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i> 67–68 (2003): 845–52. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>.","ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic thin film transistors with Pentacene,” <i>Microelectronic Engineering</i>, vol. 67–68, pp. 845–852, 2003, doi: <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>.","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>. 2003;67-68:845-852. doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>","apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2003). Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>, <i>67–68</i>, 845–852. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>","short":"Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering 67–68 (2003) 845–852.","mla":"Pannemann, Ch., et al. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i>, vol. 67–68, Elsevier BV, 2003, pp. 845–52, doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>.","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale organic thin film transistors with Pentacene}, volume={67–68}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852} }"},"page":"845-852","date_updated":"2023-03-21T10:04:43Z","publisher":"Elsevier BV","date_created":"2023-01-25T08:39:40Z","author":[{"first_name":"Ch.","last_name":"Pannemann","full_name":"Pannemann, Ch."},{"first_name":"T.","full_name":"Diekmann, T.","last_name":"Diekmann"},{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"}],"volume":"67-68","title":"Nanometer scale organic thin film transistors with Pentacene","doi":"10.1016/s0167-9317(03)00146-1"},{"date_created":"2023-01-06T13:16:24Z","publisher":"American Chemical Society (ACS)","title":"Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study","issue":"13","quality_controlled":"1","year":"2002","language":[{"iso":"eng"}],"keyword":["Electrochemistry","Spectroscopy","Surfaces and Interfaces","Condensed Matter Physics","General Materials Science"],"publication":"Langmuir","author":[{"first_name":"Cosima","full_name":"Stubenrauch, Cosima","last_name":"Stubenrauch"},{"full_name":"Frank, Christian","last_name":"Frank","first_name":"Christian"},{"first_name":"Reinhard","full_name":"Strey, Reinhard","last_name":"Strey"},{"last_name":"Burgemeister","full_name":"Burgemeister, Daniel","first_name":"Daniel"},{"first_name":"Claudia","last_name":"Schmidt","orcid":"0000-0003-3179-9997","id":"466","full_name":"Schmidt, Claudia"}],"volume":18,"date_updated":"2023-01-07T11:20:32Z","doi":"10.1021/la0201725","publication_status":"published","publication_identifier":{"issn":["0743-7463","1520-5827"]},"citation":{"ieee":"C. Stubenrauch, C. Frank, R. Strey, D. Burgemeister, and C. Schmidt, “Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study,” <i>Langmuir</i>, vol. 18, no. 13, pp. 5027–5030, 2002, doi: <a href=\"https://doi.org/10.1021/la0201725\">10.1021/la0201725</a>.","chicago":"Stubenrauch, Cosima, Christian Frank, Reinhard Strey, Daniel Burgemeister, and Claudia Schmidt. “Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study.” <i>Langmuir</i> 18, no. 13 (2002): 5027–30. <a href=\"https://doi.org/10.1021/la0201725\">https://doi.org/10.1021/la0201725</a>.","ama":"Stubenrauch C, Frank C, Strey R, Burgemeister D, Schmidt C. Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study. <i>Langmuir</i>. 2002;18(13):5027-5030. doi:<a href=\"https://doi.org/10.1021/la0201725\">10.1021/la0201725</a>","apa":"Stubenrauch, C., Frank, C., Strey, R., Burgemeister, D., &#38; Schmidt, C. (2002). Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study. <i>Langmuir</i>, <i>18</i>(13), 5027–5030. <a href=\"https://doi.org/10.1021/la0201725\">https://doi.org/10.1021/la0201725</a>","mla":"Stubenrauch, Cosima, et al. “Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study.” <i>Langmuir</i>, vol. 18, no. 13, American Chemical Society (ACS), 2002, pp. 5027–30, doi:<a href=\"https://doi.org/10.1021/la0201725\">10.1021/la0201725</a>.","bibtex":"@article{Stubenrauch_Frank_Strey_Burgemeister_Schmidt_2002, title={Lyotropic Mesophases Next to Highly Efficient Microemulsions:  A <sup>2</sup>H NMR Study}, volume={18}, DOI={<a href=\"https://doi.org/10.1021/la0201725\">10.1021/la0201725</a>}, number={13}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Stubenrauch, Cosima and Frank, Christian and Strey, Reinhard and Burgemeister, Daniel and Schmidt, Claudia}, year={2002}, pages={5027–5030} }","short":"C. Stubenrauch, C. Frank, R. Strey, D. Burgemeister, C. Schmidt, Langmuir 18 (2002) 5027–5030."},"intvolume":"        18","page":"5027-5030","user_id":"466","department":[{"_id":"2"},{"_id":"315"}],"_id":"35364","article_type":"original","type":"journal_article","status":"public"},{"user_id":"237","department":[{"_id":"314"}],"_id":"42039","language":[{"iso":"eng"}],"keyword":["Surfaces and Interfaces","General Materials Science","General Chemistry","Biophysics","Biotechnology"],"type":"journal_article","publication":"The European Physical Journal E","status":"public","author":[{"full_name":"Schweins, R.","last_name":"Schweins","first_name":"R."},{"first_name":"Klaus","full_name":"Huber, Klaus","id":"237","last_name":"Huber"}],"date_created":"2023-02-13T09:09:04Z","volume":5,"publisher":"Springer Science and Business Media LLC","date_updated":"2023-02-13T09:09:32Z","doi":"10.1007/s101890170093","title":"Collapse of sodium polyacrylate chains in calcium salt solutions","issue":"1","publication_status":"published","publication_identifier":{"issn":["1292-8941"]},"citation":{"mla":"Schweins, R., and Klaus Huber. “Collapse of Sodium Polyacrylate Chains in Calcium Salt Solutions.” <i>The European Physical Journal E</i>, vol. 5, no. 1, Springer Science and Business Media LLC, 2002, pp. 117–26, doi:<a href=\"https://doi.org/10.1007/s101890170093\">10.1007/s101890170093</a>.","short":"R. Schweins, K. Huber, The European Physical Journal E 5 (2002) 117–126.","bibtex":"@article{Schweins_Huber_2002, title={Collapse of sodium polyacrylate chains in calcium salt solutions}, volume={5}, DOI={<a href=\"https://doi.org/10.1007/s101890170093\">10.1007/s101890170093</a>}, number={1}, journal={The European Physical Journal E}, publisher={Springer Science and Business Media LLC}, author={Schweins, R. and Huber, Klaus}, year={2002}, pages={117–126} }","apa":"Schweins, R., &#38; Huber, K. (2002). Collapse of sodium polyacrylate chains in calcium salt solutions. <i>The European Physical Journal E</i>, <i>5</i>(1), 117–126. <a href=\"https://doi.org/10.1007/s101890170093\">https://doi.org/10.1007/s101890170093</a>","ieee":"R. Schweins and K. Huber, “Collapse of sodium polyacrylate chains in calcium salt solutions,” <i>The European Physical Journal E</i>, vol. 5, no. 1, pp. 117–126, 2002, doi: <a href=\"https://doi.org/10.1007/s101890170093\">10.1007/s101890170093</a>.","chicago":"Schweins, R., and Klaus Huber. “Collapse of Sodium Polyacrylate Chains in Calcium Salt Solutions.” <i>The European Physical Journal E</i> 5, no. 1 (2002): 117–26. <a href=\"https://doi.org/10.1007/s101890170093\">https://doi.org/10.1007/s101890170093</a>.","ama":"Schweins R, Huber K. Collapse of sodium polyacrylate chains in calcium salt solutions. <i>The European Physical Journal E</i>. 2002;5(1):117-126. doi:<a href=\"https://doi.org/10.1007/s101890170093\">10.1007/s101890170093</a>"},"intvolume":"         5","page":"117-126","year":"2002"},{"publication_identifier":{"issn":["0743-7463","1520-5827"]},"publication_status":"published","issue":"18","year":"2002","page":"7049-7056","intvolume":"        18","citation":{"apa":"Katzenstein, A., &#38; Huber, K. (2002). Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates. <i>Langmuir</i>, <i>18</i>(18), 7049–7056. <a href=\"https://doi.org/10.1021/la020143u\">https://doi.org/10.1021/la020143u</a>","bibtex":"@article{Katzenstein_Huber_2002, title={Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates}, volume={18}, DOI={<a href=\"https://doi.org/10.1021/la020143u\">10.1021/la020143u</a>}, number={18}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Katzenstein, Armin and Huber, Klaus}, year={2002}, pages={7049–7056} }","mla":"Katzenstein, Armin, and Klaus Huber. “Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates.” <i>Langmuir</i>, vol. 18, no. 18, American Chemical Society (ACS), 2002, pp. 7049–56, doi:<a href=\"https://doi.org/10.1021/la020143u\">10.1021/la020143u</a>.","short":"A. Katzenstein, K. Huber, Langmuir 18 (2002) 7049–7056.","ieee":"A. Katzenstein and K. Huber, “Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates,” <i>Langmuir</i>, vol. 18, no. 18, pp. 7049–7056, 2002, doi: <a href=\"https://doi.org/10.1021/la020143u\">10.1021/la020143u</a>.","chicago":"Katzenstein, Armin, and Klaus Huber. “Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates.” <i>Langmuir</i> 18, no. 18 (2002): 7049–56. <a href=\"https://doi.org/10.1021/la020143u\">https://doi.org/10.1021/la020143u</a>.","ama":"Katzenstein A, Huber K. Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates. <i>Langmuir</i>. 2002;18(18):7049-7056. doi:<a href=\"https://doi.org/10.1021/la020143u\">10.1021/la020143u</a>"},"date_updated":"2023-02-13T13:04:43Z","publisher":"American Chemical Society (ACS)","volume":18,"author":[{"full_name":"Katzenstein, Armin","last_name":"Katzenstein","first_name":"Armin"},{"last_name":"Huber","id":"237","full_name":"Huber, Klaus","first_name":"Klaus"}],"date_created":"2023-02-13T13:04:11Z","title":"Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates","doi":"10.1021/la020143u","publication":"Langmuir","type":"journal_article","status":"public","_id":"42052","department":[{"_id":"314"}],"user_id":"237","keyword":["Electrochemistry","Spectroscopy","Surfaces and Interfaces","Condensed Matter Physics","General Materials Science"],"language":[{"iso":"eng"}]},{"status":"public","type":"journal_article","_id":"39912","department":[{"_id":"59"}],"user_id":"20179","intvolume":"        21","page":"363-366","citation":{"ama":"Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>. 2002;21(1-4):363-366. doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>","ieee":"I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, pp. 363–366, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","chicago":"Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i> 21, no. 1–4 (2002): 363–66. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>.","bibtex":"@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }","short":"I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366.","mla":"Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","apa":"Schönstein, I., Müller, J., Hilleringmann, U., &#38; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>, <i>21</i>(1–4), 363–366. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>"},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","doi":"10.1016/0167-9317(93)90092-j","date_updated":"2023-03-21T09:50:03Z","volume":21,"author":[{"last_name":"Schönstein","full_name":"Schönstein, I.","first_name":"I."},{"first_name":"J.","last_name":"Müller","full_name":"Müller, J."},{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"publication":"Microelectronic Engineering","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"year":"2002","issue":"1-4","title":"Characterization of submicron NMOS devices due to visible light emission","publisher":"Elsevier BV","date_created":"2023-01-25T09:26:21Z"},{"doi":"10.1016/0167-9317(92)90425-q","volume":19,"author":[{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"date_updated":"2023-03-21T09:49:25Z","page":"211-214","intvolume":"        19","citation":{"ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>"},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","department":[{"_id":"59"}],"user_id":"20179","_id":"39914","status":"public","type":"journal_article","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","date_created":"2023-01-25T09:27:23Z","publisher":"Elsevier BV","year":"2002","issue":"1-4","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"publication":"Microelectronic Engineering"},{"volume":30,"date_created":"2023-01-25T09:20:20Z","author":[{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"date_updated":"2023-03-21T09:53:55Z","publisher":"Elsevier BV","doi":"10.1016/0167-9317(95)00280-4","title":"Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique","issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","page":"431-434","intvolume":"        30","citation":{"chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","ama":"Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>. 2002;30(1-4):431-434. doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }","mla":"Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434."},"year":"2002","department":[{"_id":"59"}],"user_id":"20179","_id":"39899","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"publication":"Microelectronic Engineering","type":"journal_article","status":"public"},{"language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39882","status":"public","publication":"Microelectronic Engineering","type":"journal_article","doi":"10.1016/s0167-9317(00)00370-1","title":"A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV","volume":53,"author":[{"first_name":"V.","last_name":"Mankowski","full_name":"Mankowski, V."},{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"},{"first_name":"K.","full_name":"Schumacher, K.","last_name":"Schumacher"}],"date_created":"2023-01-25T09:10:13Z","date_updated":"2023-03-21T10:00:06Z","publisher":"Elsevier BV","intvolume":"        53","page":"525-528","citation":{"chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>.","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>. 2002;53(1-4):525-528. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>","mla":"Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={525–528} }","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528.","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>"},"year":"2002","issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published"},{"page":"213-216","intvolume":"        53","citation":{"apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>","mla":"Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }","ama":"Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>. 2002;53(1-4):213-216. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>."},"year":"2002","issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","doi":"10.1016/s0167-9317(00)00299-9","title":"1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","volume":53,"author":[{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"date_created":"2023-01-25T09:08:36Z","date_updated":"2023-03-21T10:02:46Z","publisher":"Elsevier BV","status":"public","publication":"Microelectronic Engineering","type":"journal_article","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39879"},{"language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39919","status":"public","type":"journal_article","publication":"Microelectronic Engineering","doi":"10.1016/0167-9317(91)90231-2","title":"A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits","date_created":"2023-01-25T09:29:32Z","author":[{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"first_name":"K.","last_name":"Knospe","full_name":"Knospe, K."},{"first_name":"C.","full_name":"Heite, C.","last_name":"Heite"},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"volume":15,"publisher":"Elsevier BV","date_updated":"2023-03-22T10:29:08Z","citation":{"ama":"Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>. 2002;15(1-4):289-292. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>","chicago":"Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>.","ieee":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","mla":"Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","bibtex":"@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}, year={2002}, pages={289–292} }","short":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292.","apa":"Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>"},"intvolume":"        15","page":"289-292","year":"2002","issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]}},{"doi":"10.1016/0167-9317(91)90299-s","title":"Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica","volume":15,"date_created":"2023-01-25T09:29:53Z","author":[{"first_name":"A.","full_name":"Soennecken, A.","last_name":"Soennecken"},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"publisher":"Elsevier BV","date_updated":"2023-03-21T09:47:17Z","intvolume":"        15","page":"633-636","citation":{"bibtex":"@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }","short":"A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.","mla":"Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","apa":"Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>","chicago":"Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>.","ieee":"A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","ama":"Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>. 2002;15(1-4):633-636. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>"},"year":"2002","issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39920","status":"public","publication":"Microelectronic Engineering","type":"journal_article"},{"year":"2002","intvolume":"        19","page":"211-214","citation":{"ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }"},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","issue":"1-4","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","doi":"10.1016/0167-9317(92)90425-q","publisher":"Elsevier BV","date_updated":"2023-03-21T09:49:09Z","volume":19,"author":[{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"date_created":"2023-01-25T09:27:51Z","status":"public","publication":"Microelectronic Engineering","type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39915","department":[{"_id":"59"}],"user_id":"20179"},{"_id":"39916","user_id":"20179","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Microelectronic Engineering","status":"public","publisher":"Elsevier BV","date_updated":"2023-03-21T09:48:55Z","author":[{"first_name":"S.","full_name":"Adams, S.","last_name":"Adams"},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"date_created":"2023-01-25T09:28:16Z","volume":19,"title":"CMOS compatible micromachining by dry silicon-etching techniques","doi":"10.1016/0167-9317(92)90420-v","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"issue":"1-4","year":"2002","citation":{"short":"S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.","bibtex":"@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }","mla":"Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","apa":"Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 191–194. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>","ama":"Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>","ieee":"S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 191–194, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","chicago":"Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 191–94. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>."},"intvolume":"        19","page":"191-194"},{"year":"2002","issue":"1-4","title":"12 kV low current cascaded light triggered switch on one silicon chip","date_created":"2023-01-25T09:13:17Z","publisher":"Elsevier BV","publication":"Microelectronic Engineering","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"citation":{"ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i> 46, no. 1–4 (2002): 413–17. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417. doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={413–417} }","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.","mla":"Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier BV, 2002, pp. 413–17, doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>, <i>46</i>(1–4), 413–417. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>"},"intvolume":"        46","page":"413-417","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"doi":"10.1016/s0167-9317(99)00122-7","author":[{"full_name":"Mankowski, V.","last_name":"Mankowski","first_name":"V."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"full_name":"Schumacher, K.","last_name":"Schumacher","first_name":"K."}],"volume":46,"date_updated":"2023-03-21T09:58:35Z","status":"public","type":"journal_article","user_id":"20179","department":[{"_id":"59"}],"_id":"39889"},{"_id":"39877","department":[{"_id":"59"}],"user_id":"20179","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication":"Microelectronic Engineering","type":"journal_article","status":"public","date_updated":"2023-03-21T10:03:00Z","publisher":"Elsevier BV","volume":53,"author":[{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"},{"first_name":"T.","full_name":"Vieregge, T.","last_name":"Vieregge"},{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."}],"date_created":"2023-01-25T09:08:13Z","title":"A structure definition technique for 25 nm lines of silicon and related materials","doi":"10.1016/s0167-9317(00)00380-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","issue":"1-4","year":"2002","page":"569-572","intvolume":"        53","citation":{"ieee":"U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","chicago":"Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 569–72. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.","ama":"Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>. 2002;53(1-4):569-572. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>","mla":"Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","short":"U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.","bibtex":"@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }","apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 569–572. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>"}},{"department":[{"_id":"314"}],"user_id":"237","_id":"42051","language":[{"iso":"eng"}],"keyword":["Electrochemistry","Spectroscopy","Surfaces and Interfaces","Condensed Matter Physics","General Materials Science"],"publication":"Langmuir","type":"journal_article","status":"public","volume":16,"author":[{"full_name":"Inglés, Sergio Escudero","last_name":"Inglés","first_name":"Sergio Escudero"},{"last_name":"Katzenstein","full_name":"Katzenstein, Armin","first_name":"Armin"},{"last_name":"Schlenker","full_name":"Schlenker, Wolfgang","first_name":"Wolfgang"},{"first_name":"Klaus","full_name":"Huber, Klaus","id":"237","last_name":"Huber"}],"date_created":"2023-02-13T13:02:06Z","date_updated":"2023-02-13T13:15:20Z","publisher":"American Chemical Society (ACS)","doi":"10.1021/la9903649","title":"Time-Resolved Recording of Ionic Dyestuff Aggregation by Static Light Scattering","issue":"7","publication_identifier":{"issn":["0743-7463","1520-5827"]},"publication_status":"published","page":"3010-3018","intvolume":"        16","citation":{"apa":"Inglés, S. E., Katzenstein, A., Schlenker, W., &#38; Huber, K. (2000). Time-Resolved Recording of Ionic Dyestuff Aggregation by Static Light Scattering. <i>Langmuir</i>, <i>16</i>(7), 3010–3018. <a href=\"https://doi.org/10.1021/la9903649\">https://doi.org/10.1021/la9903649</a>","short":"S.E. Inglés, A. Katzenstein, W. Schlenker, K. Huber, Langmuir 16 (2000) 3010–3018.","mla":"Inglés, Sergio Escudero, et al. “Time-Resolved Recording of Ionic Dyestuff Aggregation by Static Light Scattering.” <i>Langmuir</i>, vol. 16, no. 7, American Chemical Society (ACS), 2000, pp. 3010–18, doi:<a href=\"https://doi.org/10.1021/la9903649\">10.1021/la9903649</a>.","bibtex":"@article{Inglés_Katzenstein_Schlenker_Huber_2000, title={Time-Resolved Recording of Ionic Dyestuff Aggregation by Static Light Scattering}, volume={16}, DOI={<a href=\"https://doi.org/10.1021/la9903649\">10.1021/la9903649</a>}, number={7}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Inglés, Sergio Escudero and Katzenstein, Armin and Schlenker, Wolfgang and Huber, Klaus}, year={2000}, pages={3010–3018} }","ama":"Inglés SE, Katzenstein A, Schlenker W, Huber K. Time-Resolved Recording of Ionic Dyestuff Aggregation by Static Light Scattering. <i>Langmuir</i>. 2000;16(7):3010-3018. doi:<a href=\"https://doi.org/10.1021/la9903649\">10.1021/la9903649</a>","chicago":"Inglés, Sergio Escudero, Armin Katzenstein, Wolfgang Schlenker, and Klaus Huber. “Time-Resolved Recording of Ionic Dyestuff Aggregation by Static Light Scattering.” <i>Langmuir</i> 16, no. 7 (2000): 3010–18. <a href=\"https://doi.org/10.1021/la9903649\">https://doi.org/10.1021/la9903649</a>.","ieee":"S. E. Inglés, A. Katzenstein, W. Schlenker, and K. Huber, “Time-Resolved Recording of Ionic Dyestuff Aggregation by Static Light Scattering,” <i>Langmuir</i>, vol. 16, no. 7, pp. 3010–3018, 2000, doi: <a href=\"https://doi.org/10.1021/la9903649\">10.1021/la9903649</a>."},"year":"2000"},{"article_type":"original","extern":"1","_id":"35371","department":[{"_id":"2"},{"_id":"315"}],"user_id":"466","status":"public","type":"journal_article","doi":"10.1021/la9904105","date_updated":"2023-01-07T11:16:35Z","volume":15,"author":[{"full_name":"Müller, Stefan","last_name":"Müller","first_name":"Stefan"},{"first_name":"Claus","last_name":"Börschig","full_name":"Börschig, Claus"},{"full_name":"Gronski, Wolfram","last_name":"Gronski","first_name":"Wolfram"},{"first_name":"Claudia","id":"466","full_name":"Schmidt, Claudia","last_name":"Schmidt","orcid":"0000-0003-3179-9997"},{"full_name":"Roux, Didier","last_name":"Roux","first_name":"Didier"}],"page":"7558-7564","intvolume":"        15","citation":{"apa":"Müller, S., Börschig, C., Gronski, W., Schmidt, C., &#38; Roux, D. (1999). Shear-Induced States of Orientation of the Lamellar Phase of C<sub>12</sub>E<sub>4</sub>/Water. <i>Langmuir</i>, <i>15</i>(22), 7558–7564. <a href=\"https://doi.org/10.1021/la9904105\">https://doi.org/10.1021/la9904105</a>","bibtex":"@article{Müller_Börschig_Gronski_Schmidt_Roux_1999, title={Shear-Induced States of Orientation of the Lamellar Phase of C<sub>12</sub>E<sub>4</sub>/Water}, volume={15}, DOI={<a href=\"https://doi.org/10.1021/la9904105\">10.1021/la9904105</a>}, number={22}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Müller, Stefan and Börschig, Claus and Gronski, Wolfram and Schmidt, Claudia and Roux, Didier}, year={1999}, pages={7558–7564} }","mla":"Müller, Stefan, et al. “Shear-Induced States of Orientation of the Lamellar Phase of C<sub>12</sub>E<sub>4</sub>/Water.” <i>Langmuir</i>, vol. 15, no. 22, American Chemical Society (ACS), 1999, pp. 7558–64, doi:<a href=\"https://doi.org/10.1021/la9904105\">10.1021/la9904105</a>.","short":"S. Müller, C. Börschig, W. Gronski, C. Schmidt, D. Roux, Langmuir 15 (1999) 7558–7564.","ama":"Müller S, Börschig C, Gronski W, Schmidt C, Roux D. Shear-Induced States of Orientation of the Lamellar Phase of C<sub>12</sub>E<sub>4</sub>/Water. <i>Langmuir</i>. 1999;15(22):7558-7564. doi:<a href=\"https://doi.org/10.1021/la9904105\">10.1021/la9904105</a>","chicago":"Müller, Stefan, Claus Börschig, Wolfram Gronski, Claudia Schmidt, and Didier Roux. “Shear-Induced States of Orientation of the Lamellar Phase of C<sub>12</sub>E<sub>4</sub>/Water.” <i>Langmuir</i> 15, no. 22 (1999): 7558–64. <a href=\"https://doi.org/10.1021/la9904105\">https://doi.org/10.1021/la9904105</a>.","ieee":"S. Müller, C. Börschig, W. Gronski, C. Schmidt, and D. Roux, “Shear-Induced States of Orientation of the Lamellar Phase of C<sub>12</sub>E<sub>4</sub>/Water,” <i>Langmuir</i>, vol. 15, no. 22, pp. 7558–7564, 1999, doi: <a href=\"https://doi.org/10.1021/la9904105\">10.1021/la9904105</a>."},"publication_identifier":{"issn":["0743-7463","1520-5827"]},"publication_status":"published","keyword":["Electrochemistry","Spectroscopy","Surfaces and Interfaces","Condensed Matter Physics","General Materials Science"],"language":[{"iso":"eng"}],"publication":"Langmuir","title":"Shear-Induced States of Orientation of the Lamellar Phase of C<sub>12</sub>E<sub>4</sub>/Water","publisher":"American Chemical Society (ACS)","date_created":"2023-01-06T13:19:10Z","year":"1999","quality_controlled":"1","issue":"22"},{"date_updated":"2023-01-26T10:30:56Z","publisher":"Royal Society of Chemistry (RSC)","author":[{"first_name":"Julio","full_name":"Buey, Julio","last_name":"Buey"},{"first_name":"Pablo","full_name":"Espinet, Pablo","last_name":"Espinet"},{"id":"254","full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","first_name":"Heinz-Siegfried"},{"first_name":"Jochen","last_name":"Strauss","full_name":"Strauss, Jochen"}],"date_created":"2023-01-26T09:22:26Z","title":"Metallomesogens presenting blue phases in a glassy state and in metallomesogen/nematic mixtures","doi":"10.1039/a900374f","publication_status":"published","publication_identifier":{"issn":["1359-7345","1364-548X"]},"issue":"5","year":"1999","citation":{"mla":"Buey, Julio, et al. “Metallomesogens Presenting Blue Phases in a Glassy State and in Metallomesogen/Nematic Mixtures.” <i>Chemical Communications</i>, no. 5, Royal Society of Chemistry (RSC), 1999, pp. 441–42, doi:<a href=\"https://doi.org/10.1039/a900374f\">10.1039/a900374f</a>.","bibtex":"@article{Buey_Espinet_Kitzerow_Strauss_1999, title={Metallomesogens presenting blue phases in a glassy state and in metallomesogen/nematic mixtures}, DOI={<a href=\"https://doi.org/10.1039/a900374f\">10.1039/a900374f</a>}, number={5}, journal={Chemical Communications}, publisher={Royal Society of Chemistry (RSC)}, author={Buey, Julio and Espinet, Pablo and Kitzerow, Heinz-Siegfried and Strauss, Jochen}, year={1999}, pages={441–442} }","short":"J. Buey, P. Espinet, H.-S. Kitzerow, J. Strauss, Chemical Communications (1999) 441–442.","apa":"Buey, J., Espinet, P., Kitzerow, H.-S., &#38; Strauss, J. (1999). Metallomesogens presenting blue phases in a glassy state and in metallomesogen/nematic mixtures. <i>Chemical Communications</i>, <i>5</i>, 441–442. <a href=\"https://doi.org/10.1039/a900374f\">https://doi.org/10.1039/a900374f</a>","ama":"Buey J, Espinet P, Kitzerow H-S, Strauss J. Metallomesogens presenting blue phases in a glassy state and in metallomesogen/nematic mixtures. <i>Chemical Communications</i>. 1999;(5):441-442. doi:<a href=\"https://doi.org/10.1039/a900374f\">10.1039/a900374f</a>","chicago":"Buey, Julio, Pablo Espinet, Heinz-Siegfried Kitzerow, and Jochen Strauss. “Metallomesogens Presenting Blue Phases in a Glassy State and in Metallomesogen/Nematic Mixtures.” <i>Chemical Communications</i>, no. 5 (1999): 441–42. <a href=\"https://doi.org/10.1039/a900374f\">https://doi.org/10.1039/a900374f</a>.","ieee":"J. Buey, P. Espinet, H.-S. Kitzerow, and J. Strauss, “Metallomesogens presenting blue phases in a glassy state and in metallomesogen/nematic mixtures,” <i>Chemical Communications</i>, no. 5, pp. 441–442, 1999, doi: <a href=\"https://doi.org/10.1039/a900374f\">10.1039/a900374f</a>."},"page":"441-442","_id":"40223","user_id":"254","department":[{"_id":"313"},{"_id":"638"}],"keyword":["Materials Chemistry","Metals and Alloys","Surfaces","Coatings and Films","General Chemistry","Ceramics and Composites","Electronic","Optical and Magnetic Materials","Catalysis"],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Chemical Communications","status":"public"},{"issue":"3","publication_status":"published","quality_controlled":"1","publication_identifier":{"issn":["1520-6106","1520-5207"]},"citation":{"ama":"Schmidt G, Müller S, Lindner P, Schmidt C, Richtering W. Shear Orientation of Lyotropic Hexagonal Phases. <i>The Journal of Physical Chemistry B</i>. 1998;102(3):507-513. doi:<a href=\"https://doi.org/10.1021/jp9725745\">10.1021/jp9725745</a>","ieee":"G. Schmidt, S. Müller, P. Lindner, C. Schmidt, and W. Richtering, “Shear Orientation of Lyotropic Hexagonal Phases,” <i>The Journal of Physical Chemistry B</i>, vol. 102, no. 3, pp. 507–513, 1998, doi: <a href=\"https://doi.org/10.1021/jp9725745\">10.1021/jp9725745</a>.","chicago":"Schmidt, Gudrun, Stefan Müller, Peter Lindner, Claudia Schmidt, and Walter Richtering. “Shear Orientation of Lyotropic Hexagonal Phases.” <i>The Journal of Physical Chemistry B</i> 102, no. 3 (1998): 507–13. <a href=\"https://doi.org/10.1021/jp9725745\">https://doi.org/10.1021/jp9725745</a>.","apa":"Schmidt, G., Müller, S., Lindner, P., Schmidt, C., &#38; Richtering, W. (1998). Shear Orientation of Lyotropic Hexagonal Phases. <i>The Journal of Physical Chemistry B</i>, <i>102</i>(3), 507–513. <a href=\"https://doi.org/10.1021/jp9725745\">https://doi.org/10.1021/jp9725745</a>","mla":"Schmidt, Gudrun, et al. “Shear Orientation of Lyotropic Hexagonal Phases.” <i>The Journal of Physical Chemistry B</i>, vol. 102, no. 3, American Chemical Society (ACS), 1998, pp. 507–13, doi:<a href=\"https://doi.org/10.1021/jp9725745\">10.1021/jp9725745</a>.","bibtex":"@article{Schmidt_Müller_Lindner_Schmidt_Richtering_1998, title={Shear Orientation of Lyotropic Hexagonal Phases}, volume={102}, DOI={<a href=\"https://doi.org/10.1021/jp9725745\">10.1021/jp9725745</a>}, number={3}, journal={The Journal of Physical Chemistry B}, publisher={American Chemical Society (ACS)}, author={Schmidt, Gudrun and Müller, Stefan and Lindner, Peter and Schmidt, Claudia and Richtering, Walter}, year={1998}, pages={507–513} }","short":"G. Schmidt, S. Müller, P. Lindner, C. Schmidt, W. Richtering, The Journal of Physical Chemistry B 102 (1998) 507–513."},"intvolume":"       102","page":"507-513","year":"1998","date_created":"2023-01-06T13:19:55Z","author":[{"last_name":"Schmidt","full_name":"Schmidt, Gudrun","first_name":"Gudrun"},{"first_name":"Stefan","full_name":"Müller, Stefan","last_name":"Müller"},{"last_name":"Lindner","full_name":"Lindner, Peter","first_name":"Peter"},{"last_name":"Schmidt","orcid":"0000-0003-3179-9997","id":"466","full_name":"Schmidt, Claudia","first_name":"Claudia"},{"first_name":"Walter","full_name":"Richtering, Walter","last_name":"Richtering"}],"volume":102,"date_updated":"2023-01-07T11:12:58Z","publisher":"American Chemical Society (ACS)","doi":"10.1021/jp9725745","title":"Shear Orientation of Lyotropic Hexagonal Phases","type":"journal_article","publication":"The Journal of Physical Chemistry B","status":"public","user_id":"466","department":[{"_id":"2"},{"_id":"315"}],"_id":"35373","language":[{"iso":"eng"}],"article_type":"original","keyword":["Materials Chemistry","Surfaces","Coatings and Films","Physical and Theoretical Chemistry"]},{"publication":"Langmuir","language":[{"iso":"eng"}],"keyword":["Electrochemistry","Spectroscopy","Surfaces and Interfaces","Condensed Matter Physics","General Materials Science"],"issue":"9","quality_controlled":"1","year":"1995","date_created":"2023-01-06T13:22:29Z","publisher":"American Chemical Society (ACS)","title":"Shear-Induced Alignment of a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR","type":"journal_article","status":"public","user_id":"466","department":[{"_id":"2"},{"_id":"315"}],"_id":"35382","extern":"1","article_type":"original","publication_status":"published","publication_identifier":{"issn":["0743-7463","1520-5827"]},"citation":{"short":"M. Lukaschek, D.A. Grabowski, C. Schmidt, Langmuir 11 (1995) 3590–3594.","mla":"Lukaschek, Michail, et al. “Shear-Induced Alignment of a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR.” <i>Langmuir</i>, vol. 11, no. 9, American Chemical Society (ACS), 1995, pp. 3590–94, doi:<a href=\"https://doi.org/10.1021/la00009a050\">10.1021/la00009a050</a>.","bibtex":"@article{Lukaschek_Grabowski_Schmidt_1995, title={Shear-Induced Alignment of a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR}, volume={11}, DOI={<a href=\"https://doi.org/10.1021/la00009a050\">10.1021/la00009a050</a>}, number={9}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Lukaschek, Michail and Grabowski, David A. and Schmidt, Claudia}, year={1995}, pages={3590–3594} }","apa":"Lukaschek, M., Grabowski, D. A., &#38; Schmidt, C. (1995). Shear-Induced Alignment of a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR. <i>Langmuir</i>, <i>11</i>(9), 3590–3594. <a href=\"https://doi.org/10.1021/la00009a050\">https://doi.org/10.1021/la00009a050</a>","ieee":"M. Lukaschek, D. A. Grabowski, and C. Schmidt, “Shear-Induced Alignment of a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR,” <i>Langmuir</i>, vol. 11, no. 9, pp. 3590–3594, 1995, doi: <a href=\"https://doi.org/10.1021/la00009a050\">10.1021/la00009a050</a>.","chicago":"Lukaschek, Michail, David A. Grabowski, and Claudia Schmidt. “Shear-Induced Alignment of a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR.” <i>Langmuir</i> 11, no. 9 (1995): 3590–94. <a href=\"https://doi.org/10.1021/la00009a050\">https://doi.org/10.1021/la00009a050</a>.","ama":"Lukaschek M, Grabowski DA, Schmidt C. Shear-Induced Alignment of a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR. <i>Langmuir</i>. 1995;11(9):3590-3594. doi:<a href=\"https://doi.org/10.1021/la00009a050\">10.1021/la00009a050</a>"},"page":"3590-3594","intvolume":"        11","author":[{"first_name":"Michail","full_name":"Lukaschek, Michail","last_name":"Lukaschek"},{"first_name":"David A.","last_name":"Grabowski","full_name":"Grabowski, David A."},{"first_name":"Claudia","full_name":"Schmidt, Claudia","id":"466","orcid":"0000-0003-3179-9997","last_name":"Schmidt"}],"volume":11,"date_updated":"2023-01-07T11:07:05Z","doi":"10.1021/la00009a050"}]