---
_id: '39851'
author:
- first_name: Ch.
full_name: Pannemann, Ch.
last_name: Pannemann
- first_name: T.
full_name: Diekmann, T.
last_name: Diekmann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film
transistors with Pentacene. Microelectronic Engineering. 2003;67-68:845-852.
doi:10.1016/s0167-9317(03)00146-1
apa: Pannemann, Ch., Diekmann, T., & Hilleringmann, U. (2003). Nanometer scale
organic thin film transistors with Pentacene. Microelectronic Engineering,
67–68, 845–852. https://doi.org/10.1016/s0167-9317(03)00146-1
bibtex: '@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale
organic thin film transistors with Pentacene}, volume={67–68}, DOI={10.1016/s0167-9317(03)00146-1},
journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann,
Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852}
}'
chicago: 'Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale
Organic Thin Film Transistors with Pentacene.” Microelectronic Engineering
67–68 (2003): 845–52. https://doi.org/10.1016/s0167-9317(03)00146-1.'
ieee: 'Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic
thin film transistors with Pentacene,” Microelectronic Engineering, vol.
67–68, pp. 845–852, 2003, doi: 10.1016/s0167-9317(03)00146-1.'
mla: Pannemann, Ch., et al. “Nanometer Scale Organic Thin Film Transistors with
Pentacene.” Microelectronic Engineering, vol. 67–68, Elsevier BV, 2003,
pp. 845–52, doi:10.1016/s0167-9317(03)00146-1.
short: Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering
67–68 (2003) 845–852.
date_created: 2023-01-25T08:39:40Z
date_updated: 2023-03-21T10:04:43Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(03)00146-1
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 845-852
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Nanometer scale organic thin film transistors with Pentacene
type: journal_article
user_id: '20179'
volume: 67-68
year: '2003'
...
---
_id: '35364'
article_type: original
author:
- first_name: Cosima
full_name: Stubenrauch, Cosima
last_name: Stubenrauch
- first_name: Christian
full_name: Frank, Christian
last_name: Frank
- first_name: Reinhard
full_name: Strey, Reinhard
last_name: Strey
- first_name: Daniel
full_name: Burgemeister, Daniel
last_name: Burgemeister
- first_name: Claudia
full_name: Schmidt, Claudia
id: '466'
last_name: Schmidt
orcid: 0000-0003-3179-9997
citation:
ama: Stubenrauch C, Frank C, Strey R, Burgemeister D, Schmidt C. Lyotropic Mesophases
Next to Highly Efficient Microemulsions: A 2H NMR Study. Langmuir.
2002;18(13):5027-5030. doi:10.1021/la0201725
apa: Stubenrauch, C., Frank, C., Strey, R., Burgemeister, D., & Schmidt, C.
(2002). Lyotropic Mesophases Next to Highly Efficient Microemulsions: A 2H
NMR Study. Langmuir, 18(13), 5027–5030. https://doi.org/10.1021/la0201725
bibtex: '@article{Stubenrauch_Frank_Strey_Burgemeister_Schmidt_2002, title={Lyotropic
Mesophases Next to Highly Efficient Microemulsions: A 2H NMR Study},
volume={18}, DOI={10.1021/la0201725},
number={13}, journal={Langmuir}, publisher={American Chemical Society (ACS)},
author={Stubenrauch, Cosima and Frank, Christian and Strey, Reinhard and Burgemeister,
Daniel and Schmidt, Claudia}, year={2002}, pages={5027–5030} }'
chicago: 'Stubenrauch, Cosima, Christian Frank, Reinhard Strey, Daniel Burgemeister,
and Claudia Schmidt. “Lyotropic Mesophases Next to Highly Efficient Microemulsions:
A 2H NMR Study.” Langmuir 18, no. 13 (2002): 5027–30. https://doi.org/10.1021/la0201725.'
ieee: 'C. Stubenrauch, C. Frank, R. Strey, D. Burgemeister, and C. Schmidt, “Lyotropic
Mesophases Next to Highly Efficient Microemulsions: A 2H NMR Study,”
Langmuir, vol. 18, no. 13, pp. 5027–5030, 2002, doi: 10.1021/la0201725.'
mla: Stubenrauch, Cosima, et al. “Lyotropic Mesophases Next to Highly Efficient
Microemulsions: A 2H NMR Study.” Langmuir, vol. 18, no. 13,
American Chemical Society (ACS), 2002, pp. 5027–30, doi:10.1021/la0201725.
short: C. Stubenrauch, C. Frank, R. Strey, D. Burgemeister, C. Schmidt, Langmuir
18 (2002) 5027–5030.
date_created: 2023-01-06T13:16:24Z
date_updated: 2023-01-07T11:20:32Z
department:
- _id: '2'
- _id: '315'
doi: 10.1021/la0201725
intvolume: ' 18'
issue: '13'
keyword:
- Electrochemistry
- Spectroscopy
- Surfaces and Interfaces
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
page: 5027-5030
publication: Langmuir
publication_identifier:
issn:
- 0743-7463
- 1520-5827
publication_status: published
publisher: American Chemical Society (ACS)
quality_controlled: '1'
status: public
title: Lyotropic Mesophases Next to Highly Efficient Microemulsions: A 2H
NMR Study
type: journal_article
user_id: '466'
volume: 18
year: '2002'
...
---
_id: '42039'
author:
- first_name: R.
full_name: Schweins, R.
last_name: Schweins
- first_name: Klaus
full_name: Huber, Klaus
id: '237'
last_name: Huber
citation:
ama: Schweins R, Huber K. Collapse of sodium polyacrylate chains in calcium salt
solutions. The European Physical Journal E. 2002;5(1):117-126. doi:10.1007/s101890170093
apa: Schweins, R., & Huber, K. (2002). Collapse of sodium polyacrylate chains
in calcium salt solutions. The European Physical Journal E, 5(1),
117–126. https://doi.org/10.1007/s101890170093
bibtex: '@article{Schweins_Huber_2002, title={Collapse of sodium polyacrylate chains
in calcium salt solutions}, volume={5}, DOI={10.1007/s101890170093},
number={1}, journal={The European Physical Journal E}, publisher={Springer Science
and Business Media LLC}, author={Schweins, R. and Huber, Klaus}, year={2002},
pages={117–126} }'
chicago: 'Schweins, R., and Klaus Huber. “Collapse of Sodium Polyacrylate Chains
in Calcium Salt Solutions.” The European Physical Journal E 5, no. 1 (2002):
117–26. https://doi.org/10.1007/s101890170093.'
ieee: 'R. Schweins and K. Huber, “Collapse of sodium polyacrylate chains in calcium
salt solutions,” The European Physical Journal E, vol. 5, no. 1, pp. 117–126,
2002, doi: 10.1007/s101890170093.'
mla: Schweins, R., and Klaus Huber. “Collapse of Sodium Polyacrylate Chains in Calcium
Salt Solutions.” The European Physical Journal E, vol. 5, no. 1, Springer
Science and Business Media LLC, 2002, pp. 117–26, doi:10.1007/s101890170093.
short: R. Schweins, K. Huber, The European Physical Journal E 5 (2002) 117–126.
date_created: 2023-02-13T09:09:04Z
date_updated: 2023-02-13T09:09:32Z
department:
- _id: '314'
doi: 10.1007/s101890170093
intvolume: ' 5'
issue: '1'
keyword:
- Surfaces and Interfaces
- General Materials Science
- General Chemistry
- Biophysics
- Biotechnology
language:
- iso: eng
page: 117-126
publication: The European Physical Journal E
publication_identifier:
issn:
- 1292-8941
publication_status: published
publisher: Springer Science and Business Media LLC
status: public
title: Collapse of sodium polyacrylate chains in calcium salt solutions
type: journal_article
user_id: '237'
volume: 5
year: '2002'
...
---
_id: '42052'
author:
- first_name: Armin
full_name: Katzenstein, Armin
last_name: Katzenstein
- first_name: Klaus
full_name: Huber, Klaus
id: '237'
last_name: Huber
citation:
ama: Katzenstein A, Huber K. Model of Polydisperse Wormlike Stars and Its Application
to Dyestuff Aggregates. Langmuir. 2002;18(18):7049-7056. doi:10.1021/la020143u
apa: Katzenstein, A., & Huber, K. (2002). Model of Polydisperse Wormlike Stars
and Its Application to Dyestuff Aggregates. Langmuir, 18(18), 7049–7056.
https://doi.org/10.1021/la020143u
bibtex: '@article{Katzenstein_Huber_2002, title={Model of Polydisperse Wormlike
Stars and Its Application to Dyestuff Aggregates}, volume={18}, DOI={10.1021/la020143u},
number={18}, journal={Langmuir}, publisher={American Chemical Society (ACS)},
author={Katzenstein, Armin and Huber, Klaus}, year={2002}, pages={7049–7056} }'
chicago: 'Katzenstein, Armin, and Klaus Huber. “Model of Polydisperse Wormlike Stars
and Its Application to Dyestuff Aggregates.” Langmuir 18, no. 18 (2002):
7049–56. https://doi.org/10.1021/la020143u.'
ieee: 'A. Katzenstein and K. Huber, “Model of Polydisperse Wormlike Stars and Its
Application to Dyestuff Aggregates,” Langmuir, vol. 18, no. 18, pp. 7049–7056,
2002, doi: 10.1021/la020143u.'
mla: Katzenstein, Armin, and Klaus Huber. “Model of Polydisperse Wormlike Stars
and Its Application to Dyestuff Aggregates.” Langmuir, vol. 18, no. 18,
American Chemical Society (ACS), 2002, pp. 7049–56, doi:10.1021/la020143u.
short: A. Katzenstein, K. Huber, Langmuir 18 (2002) 7049–7056.
date_created: 2023-02-13T13:04:11Z
date_updated: 2023-02-13T13:04:43Z
department:
- _id: '314'
doi: 10.1021/la020143u
intvolume: ' 18'
issue: '18'
keyword:
- Electrochemistry
- Spectroscopy
- Surfaces and Interfaces
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
page: 7049-7056
publication: Langmuir
publication_identifier:
issn:
- 0743-7463
- 1520-5827
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates
type: journal_article
user_id: '237'
volume: 18
year: '2002'
...
---
_id: '39912'
author:
- first_name: I.
full_name: Schönstein, I.
last_name: Schönstein
- first_name: J.
full_name: Müller, J.
last_name: Müller
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: K.
full_name: Goser, K.
last_name: Goser
citation:
ama: Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron
NMOS devices due to visible light emission. Microelectronic Engineering.
2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j
apa: Schönstein, I., Müller, J., Hilleringmann, U., & Goser, K. (2002). Characterization
of submicron NMOS devices due to visible light emission. Microelectronic Engineering,
21(1–4), 363–366. https://doi.org/10.1016/0167-9317(93)90092-j
bibtex: '@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization
of submicron NMOS devices due to visible light emission}, volume={21}, DOI={10.1016/0167-9317(93)90092-j},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.},
year={2002}, pages={363–366} }'
chicago: 'Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization
of Submicron NMOS Devices Due to Visible Light Emission.” Microelectronic Engineering
21, no. 1–4 (2002): 363–66. https://doi.org/10.1016/0167-9317(93)90092-j.'
ieee: 'I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization
of submicron NMOS devices due to visible light emission,” Microelectronic Engineering,
vol. 21, no. 1–4, pp. 363–366, 2002, doi: 10.1016/0167-9317(93)90092-j.'
mla: Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible
Light Emission.” Microelectronic Engineering, vol. 21, no. 1–4, Elsevier
BV, 2002, pp. 363–66, doi:10.1016/0167-9317(93)90092-j.
short: I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering
21 (2002) 363–366.
date_created: 2023-01-25T09:26:21Z
date_updated: 2023-03-21T09:50:03Z
department:
- _id: '59'
doi: 10.1016/0167-9317(93)90092-j
intvolume: ' 21'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 363-366
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Characterization of submicron NMOS devices due to visible light emission
type: journal_article
user_id: '20179'
volume: 21
year: '2002'
...
---
_id: '39914'
author:
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: K.
full_name: Goser, K.
last_name: Goser
citation:
ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
photodiodes and CMOS circuits on silicon. Microelectronic Engineering.
2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q
apa: Hilleringmann, U., & Goser, K. (2002). Results of monolithic integration
of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic
Engineering, 19(1–4), 211–214. https://doi.org/10.1016/0167-9317(92)90425-q
bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
DOI={10.1016/0167-9317(92)90425-q},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic
Engineering 19, no. 1–4 (2002): 211–14. https://doi.org/10.1016/0167-9317(92)90425-q.'
ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
waveguides, photodiodes and CMOS circuits on silicon,” Microelectronic Engineering,
vol. 19, no. 1–4, pp. 211–214, 2002, doi: 10.1016/0167-9317(92)90425-q.'
mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic
Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:10.1016/0167-9317(92)90425-q.
short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:23Z
date_updated: 2023-03-21T09:49:25Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: ' 19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39899'
author:
- first_name: J.T.
full_name: Horstmann, J.T.
last_name: Horstmann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: K.
full_name: Goser, K.
last_name: Goser
citation:
ama: Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors
processed by optical lithography and a sidewall-etchback technique. Microelectronic
Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4
apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). Characterisation
of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback
technique. Microelectronic Engineering, 30(1–4), 431–434. https://doi.org/10.1016/0167-9317(95)00280-4
bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of
sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback
technique}, volume={30}, DOI={10.1016/0167-9317(95)00280-4},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
pages={431–434} }'
chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation
of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback
Technique.” Microelectronic Engineering 30, no. 1–4 (2002): 431–34. https://doi.org/10.1016/0167-9317(95)00280-4.'
ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100
nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,”
Microelectronic Engineering, vol. 30, no. 1–4, pp. 431–434, 2002, doi:
10.1016/0167-9317(95)00280-4.'
mla: Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed
by Optical Lithography and a Sidewall-Etchback Technique.” Microelectronic
Engineering, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:10.1016/0167-9317(95)00280-4.
short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30
(2002) 431–434.
date_created: 2023-01-25T09:20:20Z
date_updated: 2023-03-21T09:53:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(95)00280-4
intvolume: ' 30'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 431-434
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Characterisation of sub-100 nm-MOS-transistors processed by optical lithography
and a sidewall-etchback technique
type: journal_article
user_id: '20179'
volume: 30
year: '2002'
...
---
_id: '39882'
author:
- first_name: V.
full_name: Mankowski, V.
last_name: Mankowski
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: K.
full_name: Schumacher, K.
last_name: Schumacher
citation:
ama: Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for
smart power switching devices and very high voltage ICs above 10 kV. Microelectronic
Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1
apa: Mankowski, V., Hilleringmann, U., & Schumacher, K. (2002). A novel insulation
technique for smart power switching devices and very high voltage ICs above 10
kV. Microelectronic Engineering, 53(1–4), 525–528. https://doi.org/10.1016/s0167-9317(00)00370-1
bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation
technique for smart power switching devices and very high voltage ICs above 10
kV}, volume={53}, DOI={10.1016/s0167-9317(00)00370-1},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
pages={525–528} }'
chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation
Technique for Smart Power Switching Devices and Very High Voltage ICs above 10
KV.” Microelectronic Engineering 53, no. 1–4 (2002): 525–28. https://doi.org/10.1016/s0167-9317(00)00370-1.'
ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique
for smart power switching devices and very high voltage ICs above 10 kV,” Microelectronic
Engineering, vol. 53, no. 1–4, pp. 525–528, 2002, doi: 10.1016/s0167-9317(00)00370-1.'
mla: Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching
Devices and Very High Voltage ICs above 10 KV.” Microelectronic Engineering,
vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:10.1016/s0167-9317(00)00370-1.
short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
53 (2002) 525–528.
date_created: 2023-01-25T09:10:13Z
date_updated: 2023-03-21T10:00:06Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00370-1
intvolume: ' 53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 525-528
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A novel insulation technique for smart power switching devices and very high
voltage ICs above 10 kV
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39879'
author:
- first_name: J.T.
full_name: Horstmann, J.T.
last_name: Horstmann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: K.
full_name: Goser, K.
last_name: Goser
citation:
ama: Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors
fabricated by a special deposition and etchback technique. Microelectronic
Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9
apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). 1/f-Noise of sub-100
nm-MOS-transistors fabricated by a special deposition and etchback technique.
Microelectronic Engineering, 53(1–4), 213–216. https://doi.org/10.1016/s0167-9317(00)00299-9
bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100
nm-MOS-transistors fabricated by a special deposition and etchback technique},
volume={53}, DOI={10.1016/s0167-9317(00)00299-9},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
pages={213–216} }'
chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100
Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”
Microelectronic Engineering 53, no. 1–4 (2002): 213–16. https://doi.org/10.1016/s0167-9317(00)00299-9.'
ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors
fabricated by a special deposition and etchback technique,” Microelectronic
Engineering, vol. 53, no. 1–4, pp. 213–216, 2002, doi: 10.1016/s0167-9317(00)00299-9.'
mla: Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated
by a Special Deposition and Etchback Technique.” Microelectronic Engineering,
vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:10.1016/s0167-9317(00)00299-9.
short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53
(2002) 213–216.
date_created: 2023-01-25T09:08:36Z
date_updated: 2023-03-21T10:02:46Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00299-9
intvolume: ' 53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 213-216
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition
and etchback technique
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39919'
author:
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: K.
full_name: Knospe, K.
last_name: Knospe
- first_name: C.
full_name: Heite, C.
last_name: Heite
- first_name: K.
full_name: Schumacher, K.
last_name: Schumacher
- first_name: K.
full_name: Goser, K.
last_name: Goser
citation:
ama: Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based
technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic
Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2
apa: Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., & Goser, K. (2002).
A silicon based technology for monolithic integration of waveguides and VLSI CMOS
circuits. Microelectronic Engineering, 15(1–4), 289–292. https://doi.org/10.1016/0167-9317(91)90231-2
bibtex: '@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon
based technology for monolithic integration of waveguides and VLSI CMOS circuits},
volume={15}, DOI={10.1016/0167-9317(91)90231-2},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K.
and Goser, K.}, year={2002}, pages={289–292} }'
chicago: 'Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser.
“A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI
CMOS Circuits.” Microelectronic Engineering 15, no. 1–4 (2002): 289–92.
https://doi.org/10.1016/0167-9317(91)90231-2.'
ieee: 'U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon
based technology for monolithic integration of waveguides and VLSI CMOS circuits,”
Microelectronic Engineering, vol. 15, no. 1–4, pp. 289–292, 2002, doi:
10.1016/0167-9317(91)90231-2.'
mla: Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration
of Waveguides and VLSI CMOS Circuits.” Microelectronic Engineering, vol.
15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:10.1016/0167-9317(91)90231-2.
short: U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic
Engineering 15 (2002) 289–292.
date_created: 2023-01-25T09:29:32Z
date_updated: 2023-03-22T10:29:08Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90231-2
intvolume: ' 15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 289-292
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A silicon based technology for monolithic integration of waveguides and VLSI
CMOS circuits
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39920'
author:
- first_name: A.
full_name: Soennecken, A.
last_name: Soennecken
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: K.
full_name: Goser, K.
last_name: Goser
citation:
ama: Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile
analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic
Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s
apa: Soennecken, A., Hilleringmann, U., & Goser, K. (2002). Floating gate structures
as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica.
Microelectronic Engineering, 15(1–4), 633–636. https://doi.org/10.1016/0167-9317(91)90299-s
bibtex: '@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures
as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica},
volume={15}, DOI={10.1016/0167-9317(91)90299-s},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
pages={633–636} }'
chicago: 'Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures
as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.”
Microelectronic Engineering 15, no. 1–4 (2002): 633–36. https://doi.org/10.1016/0167-9317(91)90299-s.'
ieee: 'A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures
as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,”
Microelectronic Engineering, vol. 15, no. 1–4, pp. 633–636, 2002, doi:
10.1016/0167-9317(91)90299-s.'
mla: Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory
Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” Microelectronic
Engineering, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:10.1016/0167-9317(91)90299-s.
short: A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15
(2002) 633–636.
date_created: 2023-01-25T09:29:53Z
date_updated: 2023-03-21T09:47:17Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90299-s
intvolume: ' 15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 633-636
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS
technology with PZT dielectrica
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39915'
author:
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: K.
full_name: Goser, K.
last_name: Goser
citation:
ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
photodiodes and CMOS circuits on silicon. Microelectronic Engineering.
2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q
apa: Hilleringmann, U., & Goser, K. (2002). Results of monolithic integration
of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic
Engineering, 19(1–4), 211–214. https://doi.org/10.1016/0167-9317(92)90425-q
bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
DOI={10.1016/0167-9317(92)90425-q},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic
Engineering 19, no. 1–4 (2002): 211–14. https://doi.org/10.1016/0167-9317(92)90425-q.'
ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
waveguides, photodiodes and CMOS circuits on silicon,” Microelectronic Engineering,
vol. 19, no. 1–4, pp. 211–214, 2002, doi: 10.1016/0167-9317(92)90425-q.'
mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic
Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:10.1016/0167-9317(92)90425-q.
short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:51Z
date_updated: 2023-03-21T09:49:09Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: ' 19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39916'
author:
- first_name: S.
full_name: Adams, S.
last_name: Adams
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: K.
full_name: Goser, K.
last_name: Goser
citation:
ama: Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching
techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v
apa: Adams, S., Hilleringmann, U., & Goser, K. (2002). CMOS compatible micromachining
by dry silicon-etching techniques. Microelectronic Engineering, 19(1–4),
191–194. https://doi.org/10.1016/0167-9317(92)90420-v
bibtex: '@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining
by dry silicon-etching techniques}, volume={19}, DOI={10.1016/0167-9317(92)90420-v},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194}
}'
chicago: 'Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining
by Dry Silicon-Etching Techniques.” Microelectronic Engineering 19, no.
1–4 (2002): 191–94. https://doi.org/10.1016/0167-9317(92)90420-v.'
ieee: 'S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining
by dry silicon-etching techniques,” Microelectronic Engineering, vol. 19,
no. 1–4, pp. 191–194, 2002, doi: 10.1016/0167-9317(92)90420-v.'
mla: Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”
Microelectronic Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94,
doi:10.1016/0167-9317(92)90420-v.
short: S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002)
191–194.
date_created: 2023-01-25T09:28:16Z
date_updated: 2023-03-21T09:48:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90420-v
intvolume: ' 19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 191-194
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: CMOS compatible micromachining by dry silicon-etching techniques
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39889'
author:
- first_name: V.
full_name: Mankowski, V.
last_name: Mankowski
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: K.
full_name: Schumacher, K.
last_name: Schumacher
citation:
ama: Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light
triggered switch on one silicon chip. Microelectronic Engineering. 2002;46(1-4):413-417.
doi:10.1016/s0167-9317(99)00122-7
apa: Mankowski, V., Hilleringmann, U., & Schumacher, K. (2002). 12 kV low current
cascaded light triggered switch on one silicon chip. Microelectronic Engineering,
46(1–4), 413–417. https://doi.org/10.1016/s0167-9317(99)00122-7
bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current
cascaded light triggered switch on one silicon chip}, volume={46}, DOI={10.1016/s0167-9317(99)00122-7},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
pages={413–417} }'
chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current
Cascaded Light Triggered Switch on One Silicon Chip.” Microelectronic Engineering
46, no. 1–4 (2002): 413–17. https://doi.org/10.1016/s0167-9317(99)00122-7.'
ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded
light triggered switch on one silicon chip,” Microelectronic Engineering,
vol. 46, no. 1–4, pp. 413–417, 2002, doi: 10.1016/s0167-9317(99)00122-7.'
mla: Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on
One Silicon Chip.” Microelectronic Engineering, vol. 46, no. 1–4, Elsevier
BV, 2002, pp. 413–17, doi:10.1016/s0167-9317(99)00122-7.
short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
46 (2002) 413–417.
date_created: 2023-01-25T09:13:17Z
date_updated: 2023-03-21T09:58:35Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(99)00122-7
intvolume: ' 46'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 413-417
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 12 kV low current cascaded light triggered switch on one silicon chip
type: journal_article
user_id: '20179'
volume: 46
year: '2002'
...
---
_id: '39877'
author:
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: T.
full_name: Vieregge, T.
last_name: Vieregge
- first_name: J.T.
full_name: Horstmann, J.T.
last_name: Horstmann
citation:
ama: Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique
for 25 nm lines of silicon and related materials. Microelectronic Engineering.
2002;53(1-4):569-572. doi:10.1016/s0167-9317(00)00380-4
apa: Hilleringmann, U., Vieregge, T., & Horstmann, J. T. (2002). A structure
definition technique for 25 nm lines of silicon and related materials. Microelectronic
Engineering, 53(1–4), 569–572. https://doi.org/10.1016/s0167-9317(00)00380-4
bibtex: '@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition
technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={10.1016/s0167-9317(00)00380-4},
number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002},
pages={569–572} }'
chicago: 'Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition
Technique for 25 Nm Lines of Silicon and Related Materials.” Microelectronic
Engineering 53, no. 1–4 (2002): 569–72. https://doi.org/10.1016/s0167-9317(00)00380-4.'
ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition
technique for 25 nm lines of silicon and related materials,” Microelectronic
Engineering, vol. 53, no. 1–4, pp. 569–572, 2002, doi: 10.1016/s0167-9317(00)00380-4.'
mla: Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines
of Silicon and Related Materials.” Microelectronic Engineering, vol. 53,
no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:10.1016/s0167-9317(00)00380-4.
short: U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering
53 (2002) 569–572.
date_created: 2023-01-25T09:08:13Z
date_updated: 2023-03-21T10:03:00Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00380-4
intvolume: ' 53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 569-572
publication: Microelectronic Engineering
publication_identifier:
issn:
- 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A structure definition technique for 25 nm lines of silicon and related materials
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '42051'
author:
- first_name: Sergio Escudero
full_name: Inglés, Sergio Escudero
last_name: Inglés
- first_name: Armin
full_name: Katzenstein, Armin
last_name: Katzenstein
- first_name: Wolfgang
full_name: Schlenker, Wolfgang
last_name: Schlenker
- first_name: Klaus
full_name: Huber, Klaus
id: '237'
last_name: Huber
citation:
ama: Inglés SE, Katzenstein A, Schlenker W, Huber K. Time-Resolved Recording of
Ionic Dyestuff Aggregation by Static Light Scattering. Langmuir. 2000;16(7):3010-3018.
doi:10.1021/la9903649
apa: Inglés, S. E., Katzenstein, A., Schlenker, W., & Huber, K. (2000). Time-Resolved
Recording of Ionic Dyestuff Aggregation by Static Light Scattering. Langmuir,
16(7), 3010–3018. https://doi.org/10.1021/la9903649
bibtex: '@article{Inglés_Katzenstein_Schlenker_Huber_2000, title={Time-Resolved
Recording of Ionic Dyestuff Aggregation by Static Light Scattering}, volume={16},
DOI={10.1021/la9903649}, number={7},
journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Inglés,
Sergio Escudero and Katzenstein, Armin and Schlenker, Wolfgang and Huber, Klaus},
year={2000}, pages={3010–3018} }'
chicago: 'Inglés, Sergio Escudero, Armin Katzenstein, Wolfgang Schlenker, and Klaus
Huber. “Time-Resolved Recording of Ionic Dyestuff Aggregation by Static Light
Scattering.” Langmuir 16, no. 7 (2000): 3010–18. https://doi.org/10.1021/la9903649.'
ieee: 'S. E. Inglés, A. Katzenstein, W. Schlenker, and K. Huber, “Time-Resolved
Recording of Ionic Dyestuff Aggregation by Static Light Scattering,” Langmuir,
vol. 16, no. 7, pp. 3010–3018, 2000, doi: 10.1021/la9903649.'
mla: Inglés, Sergio Escudero, et al. “Time-Resolved Recording of Ionic Dyestuff
Aggregation by Static Light Scattering.” Langmuir, vol. 16, no. 7, American
Chemical Society (ACS), 2000, pp. 3010–18, doi:10.1021/la9903649.
short: S.E. Inglés, A. Katzenstein, W. Schlenker, K. Huber, Langmuir 16 (2000) 3010–3018.
date_created: 2023-02-13T13:02:06Z
date_updated: 2023-02-13T13:15:20Z
department:
- _id: '314'
doi: 10.1021/la9903649
intvolume: ' 16'
issue: '7'
keyword:
- Electrochemistry
- Spectroscopy
- Surfaces and Interfaces
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
page: 3010-3018
publication: Langmuir
publication_identifier:
issn:
- 0743-7463
- 1520-5827
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: Time-Resolved Recording of Ionic Dyestuff Aggregation by Static Light Scattering
type: journal_article
user_id: '237'
volume: 16
year: '2000'
...
---
_id: '35371'
article_type: original
author:
- first_name: Stefan
full_name: Müller, Stefan
last_name: Müller
- first_name: Claus
full_name: Börschig, Claus
last_name: Börschig
- first_name: Wolfram
full_name: Gronski, Wolfram
last_name: Gronski
- first_name: Claudia
full_name: Schmidt, Claudia
id: '466'
last_name: Schmidt
orcid: 0000-0003-3179-9997
- first_name: Didier
full_name: Roux, Didier
last_name: Roux
citation:
ama: Müller S, Börschig C, Gronski W, Schmidt C, Roux D. Shear-Induced States of
Orientation of the Lamellar Phase of C12E4/Water. Langmuir.
1999;15(22):7558-7564. doi:10.1021/la9904105
apa: Müller, S., Börschig, C., Gronski, W., Schmidt, C., & Roux, D. (1999).
Shear-Induced States of Orientation of the Lamellar Phase of C12E4/Water.
Langmuir, 15(22), 7558–7564. https://doi.org/10.1021/la9904105
bibtex: '@article{Müller_Börschig_Gronski_Schmidt_Roux_1999, title={Shear-Induced
States of Orientation of the Lamellar Phase of C12E4/Water},
volume={15}, DOI={10.1021/la9904105},
number={22}, journal={Langmuir}, publisher={American Chemical Society (ACS)},
author={Müller, Stefan and Börschig, Claus and Gronski, Wolfram and Schmidt, Claudia
and Roux, Didier}, year={1999}, pages={7558–7564} }'
chicago: 'Müller, Stefan, Claus Börschig, Wolfram Gronski, Claudia Schmidt, and
Didier Roux. “Shear-Induced States of Orientation of the Lamellar Phase of C12E4/Water.”
Langmuir 15, no. 22 (1999): 7558–64. https://doi.org/10.1021/la9904105.'
ieee: 'S. Müller, C. Börschig, W. Gronski, C. Schmidt, and D. Roux, “Shear-Induced
States of Orientation of the Lamellar Phase of C12E4/Water,”
Langmuir, vol. 15, no. 22, pp. 7558–7564, 1999, doi: 10.1021/la9904105.'
mla: Müller, Stefan, et al. “Shear-Induced States of Orientation of the Lamellar
Phase of C12E4/Water.” Langmuir, vol. 15, no. 22,
American Chemical Society (ACS), 1999, pp. 7558–64, doi:10.1021/la9904105.
short: S. Müller, C. Börschig, W. Gronski, C. Schmidt, D. Roux, Langmuir 15 (1999)
7558–7564.
date_created: 2023-01-06T13:19:10Z
date_updated: 2023-01-07T11:16:35Z
department:
- _id: '2'
- _id: '315'
doi: 10.1021/la9904105
extern: '1'
intvolume: ' 15'
issue: '22'
keyword:
- Electrochemistry
- Spectroscopy
- Surfaces and Interfaces
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
page: 7558-7564
publication: Langmuir
publication_identifier:
issn:
- 0743-7463
- 1520-5827
publication_status: published
publisher: American Chemical Society (ACS)
quality_controlled: '1'
status: public
title: Shear-Induced States of Orientation of the Lamellar Phase of C12E4/Water
type: journal_article
user_id: '466'
volume: 15
year: '1999'
...
---
_id: '40223'
author:
- first_name: Julio
full_name: Buey, Julio
last_name: Buey
- first_name: Pablo
full_name: Espinet, Pablo
last_name: Espinet
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Jochen
full_name: Strauss, Jochen
last_name: Strauss
citation:
ama: Buey J, Espinet P, Kitzerow H-S, Strauss J. Metallomesogens presenting blue
phases in a glassy state and in metallomesogen/nematic mixtures. Chemical Communications.
1999;(5):441-442. doi:10.1039/a900374f
apa: Buey, J., Espinet, P., Kitzerow, H.-S., & Strauss, J. (1999). Metallomesogens
presenting blue phases in a glassy state and in metallomesogen/nematic mixtures.
Chemical Communications, 5, 441–442. https://doi.org/10.1039/a900374f
bibtex: '@article{Buey_Espinet_Kitzerow_Strauss_1999, title={Metallomesogens presenting
blue phases in a glassy state and in metallomesogen/nematic mixtures}, DOI={10.1039/a900374f}, number={5}, journal={Chemical
Communications}, publisher={Royal Society of Chemistry (RSC)}, author={Buey, Julio
and Espinet, Pablo and Kitzerow, Heinz-Siegfried and Strauss, Jochen}, year={1999},
pages={441–442} }'
chicago: 'Buey, Julio, Pablo Espinet, Heinz-Siegfried Kitzerow, and Jochen Strauss.
“Metallomesogens Presenting Blue Phases in a Glassy State and in Metallomesogen/Nematic
Mixtures.” Chemical Communications, no. 5 (1999): 441–42. https://doi.org/10.1039/a900374f.'
ieee: 'J. Buey, P. Espinet, H.-S. Kitzerow, and J. Strauss, “Metallomesogens presenting
blue phases in a glassy state and in metallomesogen/nematic mixtures,” Chemical
Communications, no. 5, pp. 441–442, 1999, doi: 10.1039/a900374f.'
mla: Buey, Julio, et al. “Metallomesogens Presenting Blue Phases in a Glassy State
and in Metallomesogen/Nematic Mixtures.” Chemical Communications, no. 5,
Royal Society of Chemistry (RSC), 1999, pp. 441–42, doi:10.1039/a900374f.
short: J. Buey, P. Espinet, H.-S. Kitzerow, J. Strauss, Chemical Communications
(1999) 441–442.
date_created: 2023-01-26T09:22:26Z
date_updated: 2023-01-26T10:30:56Z
department:
- _id: '313'
- _id: '638'
doi: 10.1039/a900374f
issue: '5'
keyword:
- Materials Chemistry
- Metals and Alloys
- Surfaces
- Coatings and Films
- General Chemistry
- Ceramics and Composites
- Electronic
- Optical and Magnetic Materials
- Catalysis
language:
- iso: eng
page: 441-442
publication: Chemical Communications
publication_identifier:
issn:
- 1359-7345
- 1364-548X
publication_status: published
publisher: Royal Society of Chemistry (RSC)
status: public
title: Metallomesogens presenting blue phases in a glassy state and in metallomesogen/nematic
mixtures
type: journal_article
user_id: '254'
year: '1999'
...
---
_id: '35373'
article_type: original
author:
- first_name: Gudrun
full_name: Schmidt, Gudrun
last_name: Schmidt
- first_name: Stefan
full_name: Müller, Stefan
last_name: Müller
- first_name: Peter
full_name: Lindner, Peter
last_name: Lindner
- first_name: Claudia
full_name: Schmidt, Claudia
id: '466'
last_name: Schmidt
orcid: 0000-0003-3179-9997
- first_name: Walter
full_name: Richtering, Walter
last_name: Richtering
citation:
ama: Schmidt G, Müller S, Lindner P, Schmidt C, Richtering W. Shear Orientation
of Lyotropic Hexagonal Phases. The Journal of Physical Chemistry B. 1998;102(3):507-513.
doi:10.1021/jp9725745
apa: Schmidt, G., Müller, S., Lindner, P., Schmidt, C., & Richtering, W. (1998).
Shear Orientation of Lyotropic Hexagonal Phases. The Journal of Physical Chemistry
B, 102(3), 507–513. https://doi.org/10.1021/jp9725745
bibtex: '@article{Schmidt_Müller_Lindner_Schmidt_Richtering_1998, title={Shear Orientation
of Lyotropic Hexagonal Phases}, volume={102}, DOI={10.1021/jp9725745},
number={3}, journal={The Journal of Physical Chemistry B}, publisher={American
Chemical Society (ACS)}, author={Schmidt, Gudrun and Müller, Stefan and Lindner,
Peter and Schmidt, Claudia and Richtering, Walter}, year={1998}, pages={507–513}
}'
chicago: 'Schmidt, Gudrun, Stefan Müller, Peter Lindner, Claudia Schmidt, and Walter
Richtering. “Shear Orientation of Lyotropic Hexagonal Phases.” The Journal
of Physical Chemistry B 102, no. 3 (1998): 507–13. https://doi.org/10.1021/jp9725745.'
ieee: 'G. Schmidt, S. Müller, P. Lindner, C. Schmidt, and W. Richtering, “Shear
Orientation of Lyotropic Hexagonal Phases,” The Journal of Physical Chemistry
B, vol. 102, no. 3, pp. 507–513, 1998, doi: 10.1021/jp9725745.'
mla: Schmidt, Gudrun, et al. “Shear Orientation of Lyotropic Hexagonal Phases.”
The Journal of Physical Chemistry B, vol. 102, no. 3, American Chemical
Society (ACS), 1998, pp. 507–13, doi:10.1021/jp9725745.
short: G. Schmidt, S. Müller, P. Lindner, C. Schmidt, W. Richtering, The Journal
of Physical Chemistry B 102 (1998) 507–513.
date_created: 2023-01-06T13:19:55Z
date_updated: 2023-01-07T11:12:58Z
department:
- _id: '2'
- _id: '315'
doi: 10.1021/jp9725745
intvolume: ' 102'
issue: '3'
keyword:
- Materials Chemistry
- Surfaces
- Coatings and Films
- Physical and Theoretical Chemistry
language:
- iso: eng
page: 507-513
publication: The Journal of Physical Chemistry B
publication_identifier:
issn:
- 1520-6106
- 1520-5207
publication_status: published
publisher: American Chemical Society (ACS)
quality_controlled: '1'
status: public
title: Shear Orientation of Lyotropic Hexagonal Phases
type: journal_article
user_id: '466'
volume: 102
year: '1998'
...
---
_id: '35382'
article_type: original
author:
- first_name: Michail
full_name: Lukaschek, Michail
last_name: Lukaschek
- first_name: David A.
full_name: Grabowski, David A.
last_name: Grabowski
- first_name: Claudia
full_name: Schmidt, Claudia
id: '466'
last_name: Schmidt
orcid: 0000-0003-3179-9997
citation:
ama: Lukaschek M, Grabowski DA, Schmidt C. Shear-Induced Alignment of a Hexagonal
Lyotropic Liquid Crystal as Studied by Rheo-NMR. Langmuir. 1995;11(9):3590-3594.
doi:10.1021/la00009a050
apa: Lukaschek, M., Grabowski, D. A., & Schmidt, C. (1995). Shear-Induced Alignment
of a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR. Langmuir,
11(9), 3590–3594. https://doi.org/10.1021/la00009a050
bibtex: '@article{Lukaschek_Grabowski_Schmidt_1995, title={Shear-Induced Alignment
of a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR}, volume={11},
DOI={10.1021/la00009a050}, number={9},
journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Lukaschek,
Michail and Grabowski, David A. and Schmidt, Claudia}, year={1995}, pages={3590–3594}
}'
chicago: 'Lukaschek, Michail, David A. Grabowski, and Claudia Schmidt. “Shear-Induced
Alignment of a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR.” Langmuir
11, no. 9 (1995): 3590–94. https://doi.org/10.1021/la00009a050.'
ieee: 'M. Lukaschek, D. A. Grabowski, and C. Schmidt, “Shear-Induced Alignment of
a Hexagonal Lyotropic Liquid Crystal as Studied by Rheo-NMR,” Langmuir,
vol. 11, no. 9, pp. 3590–3594, 1995, doi: 10.1021/la00009a050.'
mla: Lukaschek, Michail, et al. “Shear-Induced Alignment of a Hexagonal Lyotropic
Liquid Crystal as Studied by Rheo-NMR.” Langmuir, vol. 11, no. 9, American
Chemical Society (ACS), 1995, pp. 3590–94, doi:10.1021/la00009a050.
short: M. Lukaschek, D.A. Grabowski, C. Schmidt, Langmuir 11 (1995) 3590–3594.
date_created: 2023-01-06T13:22:29Z
date_updated: 2023-01-07T11:07:05Z
department:
- _id: '2'
- _id: '315'
doi: 10.1021/la00009a050
extern: '1'
intvolume: ' 11'
issue: '9'
keyword:
- Electrochemistry
- Spectroscopy
- Surfaces and Interfaces
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
page: 3590-3594
publication: Langmuir
publication_identifier:
issn:
- 0743-7463
- 1520-5827
publication_status: published
publisher: American Chemical Society (ACS)
quality_controlled: '1'
status: public
title: Shear-Induced Alignment of a Hexagonal Lyotropic Liquid Crystal as Studied
by Rheo-NMR
type: journal_article
user_id: '466'
volume: 11
year: '1995'
...