---
_id: '4552'
abstract:
- lang: eng
  text: Here we report on investigations on CdSe quantum dots incorporated in ZnSe
    based Schottky photodiodes with near-field shadow masks. Photoluminescence and
    photocurrent of individual quantum dots were studied as a function of the applied
    bias voltage. The exciton energy of the quantum dot ground state transition was
    shifted to the excitation energy by using the Stark effect tuning via an external
    bias voltage. Under the condition of resonance with the laser excitation energy
    we observed a resonant photocurrent signal due to the tunnelling of carriers out
    of the quantum dots at electric fields above 500 kV/cm.
article_type: original
author:
- first_name: M.
  full_name: Panfilova, M.
  last_name: Panfilova
- first_name: S.
  full_name: Michaelis de Vasconcellos, S.
  last_name: Michaelis de Vasconcellos
- first_name: A.
  full_name: Pawlis, A.
  last_name: Pawlis
- first_name: K.
  full_name: Lischka, K.
  last_name: Lischka
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
citation:
  ama: 'Panfilova M, Michaelis de Vasconcellos S, Pawlis A, Lischka K, Zrenner A.
    Resonant photocurrent-spectroscopy of individual CdSe quantum dots. <i>Physica
    E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2521-2523. doi:<a
    href="https://doi.org/10.1016/j.physe.2010.01.013">10.1016/j.physe.2010.01.013</a>'
  apa: 'Panfilova, M., Michaelis de Vasconcellos, S., Pawlis, A., Lischka, K., &#38;
    Zrenner, A. (2010). Resonant photocurrent-spectroscopy of individual CdSe quantum
    dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10),
    2521–2523. <a href="https://doi.org/10.1016/j.physe.2010.01.013">https://doi.org/10.1016/j.physe.2010.01.013</a>'
  bibtex: '@article{Panfilova_Michaelis de Vasconcellos_Pawlis_Lischka_Zrenner_2010,
    title={Resonant photocurrent-spectroscopy of individual CdSe quantum dots}, volume={42},
    DOI={<a href="https://doi.org/10.1016/j.physe.2010.01.013">10.1016/j.physe.2010.01.013</a>},
    number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
    publisher={Elsevier BV}, author={Panfilova, M. and Michaelis de Vasconcellos,
    S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}, year={2010}, pages={2521–2523}
    }'
  chicago: 'Panfilova, M., S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and
    Artur Zrenner. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum
    Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10
    (2010): 2521–23. <a href="https://doi.org/10.1016/j.physe.2010.01.013">https://doi.org/10.1016/j.physe.2010.01.013</a>.'
  ieee: 'M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, and A.
    Zrenner, “Resonant photocurrent-spectroscopy of individual CdSe quantum dots,”
    <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10,
    pp. 2521–2523, 2010.'
  mla: 'Panfilova, M., et al. “Resonant Photocurrent-Spectroscopy of Individual CdSe
    Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol.
    42, no. 10, Elsevier BV, 2010, pp. 2521–23, doi:<a href="https://doi.org/10.1016/j.physe.2010.01.013">10.1016/j.physe.2010.01.013</a>.'
  short: 'M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, A. Zrenner,
    Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2521–2523.'
date_created: 2018-09-20T12:45:46Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.physe.2010.01.013
intvolume: '        42'
issue: '10'
keyword:
- CdSe/ZnSe quantum dots
- Photodiode
- Quantum confined Stark Effect
- Photocurrent
- II–VI Semiconductors
language:
- iso: eng
page: 2521-2523
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
  issn:
  - 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Resonant photocurrent-spectroscopy of individual CdSe quantum dots
type: journal_article
user_id: '49428'
volume: 42
year: '2010'
...
---
_id: '4555'
abstract:
- lang: eng
  text: Semiconductor microdiscs are promising for applications in photonics and quantum-information
    processing, such as efficient solid-state-based single-photon emitters. Strain
    in the multilayer structure of those devices has an important influence on their
    optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe
    microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence
    measurements of microdiscs reveal substantially broadened emission lines with
    a shift to lower energy at the undercut part of microdiscs, indicating local relaxation
    in this area. The distribution of the strain in the microdiscs is obtained from
    an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs
    is free of defects.
article_type: original
author:
- first_name: M.
  full_name: Panfilova, M.
  last_name: Panfilova
- first_name: A.
  full_name: Pawlis, A.
  last_name: Pawlis
- first_name: C.
  full_name: Arens, C.
  last_name: Arens
- first_name: S. Michaelis
  full_name: de Vasconcellos, S. Michaelis
  last_name: de Vasconcellos
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: K.P.
  full_name: Hüsch, K.P.
  last_name: Hüsch
- first_name: V.
  full_name: Wiedemeier, V.
  last_name: Wiedemeier
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: K.
  full_name: Lischka, K.
  last_name: Lischka
citation:
  ama: Panfilova M, Pawlis A, Arens C, et al. Micro-Raman imaging and micro-photoluminescence
    measurements of strain in ZnMgSe/ZnSe microdiscs. <i>Microelectronics Journal</i>.
    2008;40(2):221-223. doi:<a href="https://doi.org/10.1016/j.mejo.2008.07.056">10.1016/j.mejo.2008.07.056</a>
  apa: Panfilova, M., Pawlis, A., Arens, C., de Vasconcellos, S. M., Berth, G., Hüsch,
    K. P., … Lischka, K. (2008). Micro-Raman imaging and micro-photoluminescence measurements
    of strain in ZnMgSe/ZnSe microdiscs. <i>Microelectronics Journal</i>, <i>40</i>(2),
    221–223. <a href="https://doi.org/10.1016/j.mejo.2008.07.056">https://doi.org/10.1016/j.mejo.2008.07.056</a>
  bibtex: '@article{Panfilova_Pawlis_Arens_de Vasconcellos_Berth_Hüsch_Wiedemeier_Zrenner_Lischka_2008,
    title={Micro-Raman imaging and micro-photoluminescence measurements of strain
    in ZnMgSe/ZnSe microdiscs}, volume={40}, DOI={<a href="https://doi.org/10.1016/j.mejo.2008.07.056">10.1016/j.mejo.2008.07.056</a>},
    number={2}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Panfilova,
    M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard
    and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}, year={2008},
    pages={221–223} }'
  chicago: 'Panfilova, M., A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, Gerhard
    Berth, K.P. Hüsch, V. Wiedemeier, Artur Zrenner, and K. Lischka. “Micro-Raman
    Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.”
    <i>Microelectronics Journal</i> 40, no. 2 (2008): 221–23. <a href="https://doi.org/10.1016/j.mejo.2008.07.056">https://doi.org/10.1016/j.mejo.2008.07.056</a>.'
  ieee: M. Panfilova <i>et al.</i>, “Micro-Raman imaging and micro-photoluminescence
    measurements of strain in ZnMgSe/ZnSe microdiscs,” <i>Microelectronics Journal</i>,
    vol. 40, no. 2, pp. 221–223, 2008.
  mla: Panfilova, M., et al. “Micro-Raman Imaging and Micro-Photoluminescence Measurements
    of Strain in ZnMgSe/ZnSe Microdiscs.” <i>Microelectronics Journal</i>, vol. 40,
    no. 2, Elsevier BV, 2008, pp. 221–23, doi:<a href="https://doi.org/10.1016/j.mejo.2008.07.056">10.1016/j.mejo.2008.07.056</a>.
  short: M. Panfilova, A. Pawlis, C. Arens, S.M. de Vasconcellos, G. Berth, K.P. Hüsch,
    V. Wiedemeier, A. Zrenner, K. Lischka, Microelectronics Journal 40 (2008) 221–223.
date_created: 2018-09-20T13:39:35Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.mejo.2008.07.056
intvolume: '        40'
issue: '2'
keyword:
- Raman
- Photoluminescence
- Microdisc
- ZnSe
language:
- iso: eng
page: 221-223
publication: Microelectronics Journal
publication_identifier:
  issn:
  - 0026-2692
publication_status: published
publisher: Elsevier BV
status: public
title: Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe
  microdiscs
type: journal_article
user_id: '49428'
volume: 40
year: '2008'
...