---
_id: '39906'
author:
- first_name: E.
  full_name: Brass, E.
  last_name: Brass
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Brass E, Hilleringmann U, Schumacher K. System integration of optical devices
    and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010.
    doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>
  apa: Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration
    of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State
    Circuits</i>, <i>29</i>(8), 1006–1010. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>
  bibtex: '@article{Brass_Hilleringmann_Schumacher_2002, title={System integration
    of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>},
    number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann,
    Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }'
  chicago: 'Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration
    of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State
    Circuits</i> 29, no. 8 (2002): 1006–10. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>.'
  ieee: 'E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical
    devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>,
    vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.'
  mla: Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.”
    <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.
  short: E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits
    29 (2002) 1006–1010.
date_created: 2023-01-25T09:23:36Z
date_updated: 2023-03-21T09:51:19Z
department:
- _id: '59'
doi: 10.1109/4.297714
intvolume: '        29'
issue: '8'
keyword:
- Electrical and Electronic Engineering
language:
- iso: eng
page: 1006-1010
publication: IEEE Journal of Solid-State Circuits
publication_identifier:
  issn:
  - 0018-9200
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: System integration of optical devices and analog CMOS amplifiers
type: journal_article
user_id: '20179'
volume: 29
year: '2002'
...
---
_id: '39907'
author:
- first_name: E.
  full_name: Brass, E.
  last_name: Brass
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Brass E, Hilleringmann U, Schumacher K. System integration of optical devices
    and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010.
    doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>
  apa: Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration
    of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State
    Circuits</i>, <i>29</i>(8), 1006–1010. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>
  bibtex: '@article{Brass_Hilleringmann_Schumacher_2002, title={System integration
    of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>},
    number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann,
    Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }'
  chicago: 'Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration
    of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State
    Circuits</i> 29, no. 8 (2002): 1006–10. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>.'
  ieee: 'E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical
    devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>,
    vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.'
  mla: Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.”
    <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.
  short: E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits
    29 (2002) 1006–1010.
date_created: 2023-01-25T09:24:15Z
date_updated: 2023-03-21T09:51:33Z
department:
- _id: '59'
doi: 10.1109/4.297714
intvolume: '        29'
issue: '8'
keyword:
- Electrical and Electronic Engineering
language:
- iso: eng
page: 1006-1010
publication: IEEE Journal of Solid-State Circuits
publication_identifier:
  issn:
  - 0018-9200
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: System integration of optical devices and analog CMOS amplifiers
type: journal_article
user_id: '20179'
volume: 29
year: '2002'
...
---
_id: '39899'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors
    processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic
    Engineering</i>. 2002;30(1-4):431-434. doi:<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation
    of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback
    technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href="https://doi.org/10.1016/0167-9317(95)00280-4">https://doi.org/10.1016/0167-9317(95)00280-4</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of
    sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback
    technique}, volume={30}, DOI={<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={431–434} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation
    of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback
    Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a
    href="https://doi.org/10.1016/0167-9317(95)00280-4">https://doi.org/10.1016/0167-9317(95)00280-4</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100
    nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,”
    <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>.'
  mla: Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed
    by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic
    Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>.
  short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30
    (2002) 431–434.
date_created: 2023-01-25T09:20:20Z
date_updated: 2023-03-21T09:53:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(95)00280-4
intvolume: '        30'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 431-434
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Characterisation of sub-100 nm-MOS-transistors processed by optical lithography
  and a sidewall-etchback technique
type: journal_article
user_id: '20179'
volume: 30
year: '2002'
...
---
_id: '39925'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial
    neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>
  apa: Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI
    technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44.
    <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>
  bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies
    for artificial neural networks}, volume={9}, DOI={<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>},
    number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics
    Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.
    and Schumacher, K.}, year={2002}, pages={28–44} }'
  chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI
    Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002):
    28–44. <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>.'
  ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies
    for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44,
    2002, doi: <a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.'
  mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE
    Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE),
    2002, pp. 28–44, doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.
  short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002)
    28–44.
date_created: 2023-01-25T09:33:18Z
date_updated: 2023-03-21T09:57:17Z
department:
- _id: '59'
doi: 10.1109/40.42985
intvolume: '         9'
issue: '6'
keyword:
- Electrical and Electronic Engineering
- Hardware and Architecture
- Software
language:
- iso: eng
page: 28-44
publication: IEEE Micro
publication_identifier:
  issn:
  - 0272-1732
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: VLSI technologies for artificial neural networks
type: journal_article
user_id: '20179'
volume: 9
year: '2002'
...
---
_id: '39882'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for
    smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic
    Engineering</i>. 2002;53(1-4):525-528. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation
    technique for smart power switching devices and very high voltage ICs above 10
    kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">https://doi.org/10.1016/s0167-9317(00)00370-1</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation
    technique for smart power switching devices and very high voltage ICs above 10
    kV}, volume={53}, DOI={<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={525–528} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation
    Technique for Smart Power Switching Devices and Very High Voltage ICs above 10
    KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">https://doi.org/10.1016/s0167-9317(00)00370-1</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique
    for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>.'
  mla: Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching
    Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>,
    vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    53 (2002) 525–528.
date_created: 2023-01-25T09:10:13Z
date_updated: 2023-03-21T10:00:06Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00370-1
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 525-528
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A novel insulation technique for smart power switching devices and very high
  voltage ICs above 10 kV
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39879'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique. <i>Microelectronic
    Engineering</i>. 2002;53(1-4):213-216. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique.
    <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">https://doi.org/10.1016/s0167-9317(00)00299-9</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique},
    volume={53}, DOI={<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={213–216} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100
    Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”
    <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">https://doi.org/10.1016/s0167-9317(00)00299-9</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>.'
  mla: Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated
    by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>,
    vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>.
  short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53
    (2002) 213–216.
date_created: 2023-01-25T09:08:36Z
date_updated: 2023-03-21T10:02:46Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00299-9
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 213-216
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition
  and etchback technique
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39919'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Knospe, K.
  last_name: Knospe
- first_name: C.
  full_name: Heite, C.
  last_name: Heite
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based
    technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):289-292. doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>
  apa: Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002).
    A silicon based technology for monolithic integration of waveguides and VLSI CMOS
    circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>
  bibtex: '@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K.
    and Goser, K.}, year={2002}, pages={289–292} }'
  chicago: 'Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser.
    “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI
    CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92.
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>.'
  ieee: 'U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration
    of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol.
    15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.
  short: U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic
    Engineering 15 (2002) 289–292.
date_created: 2023-01-25T09:29:32Z
date_updated: 2023-03-22T10:29:08Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90231-2
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 289-292
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A silicon based technology for monolithic integration of waveguides and VLSI
  CMOS circuits
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39926'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial
    neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>
  apa: Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI
    technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44.
    <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>
  bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies
    for artificial neural networks}, volume={9}, DOI={<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>},
    number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics
    Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.
    and Schumacher, K.}, year={2002}, pages={28–44} }'
  chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI
    Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002):
    28–44. <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>.'
  ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies
    for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44,
    2002, doi: <a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.'
  mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE
    Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE),
    2002, pp. 28–44, doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.
  short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002)
    28–44.
date_created: 2023-01-25T09:33:50Z
date_updated: 2023-03-22T10:36:45Z
department:
- _id: '59'
doi: 10.1109/40.42985
intvolume: '         9'
issue: '6'
keyword:
- Electrical and Electronic Engineering
- Hardware and Architecture
- Software
language:
- iso: eng
page: 28-44
publication: IEEE Micro
publication_identifier:
  issn:
  - 0272-1732
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: VLSI technologies for artificial neural networks
type: journal_article
user_id: '20179'
volume: 9
year: '2002'
...
---
_id: '39920'
author:
- first_name: A.
  full_name: Soennecken, A.
  last_name: Soennecken
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile
    analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):633-636. doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>
  apa: Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica.
    <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>
  bibtex: '@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={633–636} }'
  chicago: 'Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures
    as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.”
    <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>.'
  ieee: 'A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.'
  mla: Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory
    Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic
    Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.
  short: A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15
    (2002) 633–636.
date_created: 2023-01-25T09:29:53Z
date_updated: 2023-03-21T09:47:17Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90299-s
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 633-636
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS
  technology with PZT dielectrica
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39915'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
    photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>.
    2002;19(1-4):211-214. doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>
  apa: Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic
    Engineering</i>, <i>19</i>(1–4), 211–214. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>
  bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
    DOI={<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
    of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i> 19, no. 1–4 (2002): 211–14. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
    waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>,
    vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.'
  mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
    Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.
  short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:51Z
date_updated: 2023-03-21T09:49:09Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
  circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39916'
author:
- first_name: S.
  full_name: Adams, S.
  last_name: Adams
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching
    techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>
  apa: Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining
    by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4),
    191–194. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>
  bibtex: '@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining
    by dry silicon-etching techniques}, volume={19}, DOI={<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194}
    }'
  chicago: 'Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining
    by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no.
    1–4 (2002): 191–94. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>.'
  ieee: 'S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining
    by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19,
    no. 1–4, pp. 191–194, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.'
  mla: Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”
    <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94,
    doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.
  short: S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002)
    191–194.
date_created: 2023-01-25T09:28:16Z
date_updated: 2023-03-21T09:48:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90420-v
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 191-194
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: CMOS compatible micromachining by dry silicon-etching techniques
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39348'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-24T09:23:56Z
date_updated: 2023-03-21T09:45:40Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39889'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light
    triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417.
    doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current
    cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>,
    <i>46</i>(1–4), 413–417. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current
    cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={413–417} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current
    Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>
    46, no. 1–4 (2002): 413–17. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded
    light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>,
    vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.'
  mla: Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on
    One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier
    BV, 2002, pp. 413–17, doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    46 (2002) 413–417.
date_created: 2023-01-25T09:13:17Z
date_updated: 2023-03-21T09:58:35Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(99)00122-7
intvolume: '        46'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 413-417
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 12 kV low current cascaded light triggered switch on one silicon chip
type: journal_article
user_id: '20179'
volume: 46
year: '2002'
...
---
_id: '39891'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-25T09:14:43Z
date_updated: 2023-03-21T09:58:01Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39886'
author:
- first_name: G
  full_name: Wirth, G
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: J.T
  full_name: Horstmann, J.T
  last_name: Horstmann
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena
    in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250.
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>
  apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic
    transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>,
    <i>43</i>(7), 1245–1250. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>
  bibtex: '@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport
    phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>},
    number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth,
    G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250}
    }'
  chicago: 'Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic
    Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>
    43, no. 7 (2002): 1245–50. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.'
  ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport
    phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol.
    43, no. 7, pp. 1245–1250, 2002, doi: <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.'
  mla: Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.”
    <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50,
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.
  short: G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics
    43 (2002) 1245–1250.
date_created: 2023-01-25T09:11:50Z
date_updated: 2023-03-21T09:59:22Z
department:
- _id: '59'
doi: 10.1016/s0038-1101(99)00060-x
intvolume: '        43'
issue: '7'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 1245-1250
publication: Solid-State Electronics
publication_identifier:
  issn:
  - 0038-1101
publication_status: published
publisher: Elsevier BV
status: public
title: Mesoscopic transport phenomena in ultrashort channel MOSFETs
type: journal_article
user_id: '20179'
volume: 43
year: '2002'
...
---
_id: '39876'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.J.
  full_name: Horstmann, T.J.
  last_name: Horstmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum
    feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond
    and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>
  apa: Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002).
    Structures with a minimum feature size of less than 100 nm in CVD-diamond for
    sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514.
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>
  bibtex: '@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications},
    volume={10}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>},
    number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser,
    K.}, year={2002}, pages={511–514} }'
  chicago: 'Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures
    with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.”
    <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>.'
  ieee: 'R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,”
    <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi:
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.'
  mla: Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than
    100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>,
    vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.
  short: R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related
    Materials 10 (2002) 511–514.
date_created: 2023-01-25T09:07:37Z
date_updated: 2023-03-21T10:03:16Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00373-9
intvolume: '        10'
issue: 3-7
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 511-514
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Structures with a minimum feature size of less than 100 nm in CVD-diamond for
  sensor applications
type: journal_article
user_id: '20179'
volume: 10
year: '2002'
...
---
_id: '39877'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.
  full_name: Vieregge, T.
  last_name: Vieregge
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
citation:
  ama: Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique
    for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>.
    2002;53(1-4):569-572. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>
  apa: Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure
    definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic
    Engineering</i>, <i>53</i>(1–4), 569–572. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>
  bibtex: '@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition
    technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a
    href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002},
    pages={569–572} }'
  chicago: 'Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition
    Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic
    Engineering</i> 53, no. 1–4 (2002): 569–72. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.'
  ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition
    technique for 25 nm lines of silicon and related materials,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines
    of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53,
    no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.
  short: U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering
    53 (2002) 569–572.
date_created: 2023-01-25T09:08:13Z
date_updated: 2023-03-21T10:03:00Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00380-4
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 569-572
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A structure definition technique for 25 nm lines of silicon and related materials
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39874'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive
    pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844.
    doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>
  apa: Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6),
    841–844. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>
  bibtex: '@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors}, volume={11}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>},
    number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844}
    }'
  chicago: 'Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11,
    no. 3–6 (2002): 841–44. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.'
  ieee: 'R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for
    piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11,
    no. 3–6, pp. 841–844, 2002, doi: <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.'
  mla: Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol.
    11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.
  short: R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.
date_created: 2023-01-25T09:05:52Z
date_updated: 2023-03-21T10:03:48Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00703-8
intvolume: '        11'
issue: 3-6
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 841-844
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
type: journal_article
user_id: '20179'
volume: 11
year: '2002'
...
---
_id: '45307'
author:
- first_name: Rolf
  full_name: Mahnken, Rolf
  id: '335'
  last_name: Mahnken
citation:
  ama: Mahnken R. Strength difference in compression and tension and pressure dependence
    of yielding in elasto-plasticity. <i>Computer Methods in Applied Mechanics and
    Engineering</i>. 2002;190(39):5057-5080. doi:<a href="https://doi.org/10.1016/s0045-7825(00)00364-9">10.1016/s0045-7825(00)00364-9</a>
  apa: Mahnken, R. (2002). Strength difference in compression and tension and pressure
    dependence of yielding in elasto-plasticity. <i>Computer Methods in Applied Mechanics
    and Engineering</i>, <i>190</i>(39), 5057–5080. <a href="https://doi.org/10.1016/s0045-7825(00)00364-9">https://doi.org/10.1016/s0045-7825(00)00364-9</a>
  bibtex: '@article{Mahnken_2002, title={Strength difference in compression and tension
    and pressure dependence of yielding in elasto-plasticity}, volume={190}, DOI={<a
    href="https://doi.org/10.1016/s0045-7825(00)00364-9">10.1016/s0045-7825(00)00364-9</a>},
    number={39}, journal={Computer Methods in Applied Mechanics and Engineering},
    publisher={Elsevier BV}, author={Mahnken, Rolf}, year={2002}, pages={5057–5080}
    }'
  chicago: 'Mahnken, Rolf. “Strength Difference in Compression and Tension and Pressure
    Dependence of Yielding in Elasto-Plasticity.” <i>Computer Methods in Applied Mechanics
    and Engineering</i> 190, no. 39 (2002): 5057–80. <a href="https://doi.org/10.1016/s0045-7825(00)00364-9">https://doi.org/10.1016/s0045-7825(00)00364-9</a>.'
  ieee: 'R. Mahnken, “Strength difference in compression and tension and pressure
    dependence of yielding in elasto-plasticity,” <i>Computer Methods in Applied Mechanics
    and Engineering</i>, vol. 190, no. 39, pp. 5057–5080, 2002, doi: <a href="https://doi.org/10.1016/s0045-7825(00)00364-9">10.1016/s0045-7825(00)00364-9</a>.'
  mla: Mahnken, Rolf. “Strength Difference in Compression and Tension and Pressure
    Dependence of Yielding in Elasto-Plasticity.” <i>Computer Methods in Applied Mechanics
    and Engineering</i>, vol. 190, no. 39, Elsevier BV, 2002, pp. 5057–80, doi:<a
    href="https://doi.org/10.1016/s0045-7825(00)00364-9">10.1016/s0045-7825(00)00364-9</a>.
  short: R. Mahnken, Computer Methods in Applied Mechanics and Engineering 190 (2002)
    5057–5080.
date_created: 2023-05-26T12:21:04Z
date_updated: 2023-05-26T12:22:12Z
department:
- _id: '9'
- _id: '154'
doi: 10.1016/s0045-7825(00)00364-9
intvolume: '       190'
issue: '39'
keyword:
- Computer Science Applications
- General Physics and Astronomy
- Mechanical Engineering
- Mechanics of Materials
- Computational Mechanics
language:
- iso: eng
page: 5057-5080
publication: Computer Methods in Applied Mechanics and Engineering
publication_identifier:
  issn:
  - 0045-7825
publication_status: published
publisher: Elsevier BV
quality_controlled: '1'
status: public
title: Strength difference in compression and tension and pressure dependence of yielding
  in elasto-plasticity
type: journal_article
user_id: '335'
volume: 190
year: '2002'
...
---
_id: '45413'
author:
- first_name: Rolf
  full_name: Mahnken, Rolf
  id: '335'
  last_name: Mahnken
- first_name: P.
  full_name: Steinmann, P.
  last_name: Steinmann
citation:
  ama: Mahnken R, Steinmann P. A finite element algorithm for parameter identification
    of material models for fluid saturated porous media. <i>International Journal
    for Numerical and Analytical Methods in Geomechanics</i>. 2002;25(5):415-434.
    doi:<a href="https://doi.org/10.1002/nag.136">10.1002/nag.136</a>
  apa: Mahnken, R., &#38; Steinmann, P. (2002). A finite element algorithm for parameter
    identification of material models for fluid saturated porous media. <i>International
    Journal for Numerical and Analytical Methods in Geomechanics</i>, <i>25</i>(5),
    415–434. <a href="https://doi.org/10.1002/nag.136">https://doi.org/10.1002/nag.136</a>
  bibtex: '@article{Mahnken_Steinmann_2002, title={A finite element algorithm for
    parameter identification of material models for fluid saturated porous media},
    volume={25}, DOI={<a href="https://doi.org/10.1002/nag.136">10.1002/nag.136</a>},
    number={5}, journal={International Journal for Numerical and Analytical Methods
    in Geomechanics}, publisher={Wiley}, author={Mahnken, Rolf and Steinmann, P.},
    year={2002}, pages={415–434} }'
  chicago: 'Mahnken, Rolf, and P. Steinmann. “A Finite Element Algorithm for Parameter
    Identification of Material Models for Fluid Saturated Porous Media.” <i>International
    Journal for Numerical and Analytical Methods in Geomechanics</i> 25, no. 5 (2002):
    415–34. <a href="https://doi.org/10.1002/nag.136">https://doi.org/10.1002/nag.136</a>.'
  ieee: 'R. Mahnken and P. Steinmann, “A finite element algorithm for parameter identification
    of material models for fluid saturated porous media,” <i>International Journal
    for Numerical and Analytical Methods in Geomechanics</i>, vol. 25, no. 5, pp.
    415–434, 2002, doi: <a href="https://doi.org/10.1002/nag.136">10.1002/nag.136</a>.'
  mla: Mahnken, Rolf, and P. Steinmann. “A Finite Element Algorithm for Parameter
    Identification of Material Models for Fluid Saturated Porous Media.” <i>International
    Journal for Numerical and Analytical Methods in Geomechanics</i>, vol. 25, no.
    5, Wiley, 2002, pp. 415–34, doi:<a href="https://doi.org/10.1002/nag.136">10.1002/nag.136</a>.
  short: R. Mahnken, P. Steinmann, International Journal for Numerical and Analytical
    Methods in Geomechanics 25 (2002) 415–434.
date_created: 2023-05-31T11:55:35Z
date_updated: 2023-05-31T11:55:54Z
department:
- _id: '9'
- _id: '154'
doi: 10.1002/nag.136
intvolume: '        25'
issue: '5'
keyword:
- Mechanics of Materials
- Geotechnical Engineering and Engineering Geology
- General Materials Science
- Computational Mechanics
language:
- iso: eng
page: 415-434
publication: International Journal for Numerical and Analytical Methods in Geomechanics
publication_identifier:
  issn:
  - 0363-9061
  - 1096-9853
publication_status: published
publisher: Wiley
quality_controlled: '1'
status: public
title: A finite element algorithm for parameter identification of material models
  for fluid saturated porous media
type: journal_article
user_id: '335'
volume: 25
year: '2002'
...