[{"language":[{"iso":"eng"}],"doi":"10.1002/pssb.201552592","year":"2016","title":"Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC","author":[{"full_name":"Rüsing, Michael","last_name":"Rüsing","first_name":"Michael","orcid":"0000-0003-4682-4577","id":"22501"},{"full_name":"Wecker, T.","last_name":"Wecker","first_name":"T."},{"id":"53","last_name":"Berth","first_name":"Gerhard","full_name":"Berth, Gerhard"},{"first_name":"Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","id":"14"},{"last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur","full_name":"Zrenner, Artur","id":"606"}],"publication_identifier":{"issn":["0370-1972"]},"date_updated":"2023-10-09T08:48:35Z","publication_status":"published","intvolume":"       253","article_type":"original","date_created":"2018-08-29T08:24:01Z","keyword":["cubic gallium nitride","dislocation density","HRXRD","Raman spectroscopy"],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"issue":"4","publication":"physica status solidi (b)","abstract":[{"lang":"eng","text":"Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well-formed c-GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Ramanspectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films."}],"page":"778-782","_id":"4240","publisher":"Wiley","user_id":"14931","volume":253,"status":"public","citation":{"mla":"Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i>, vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>.","ama":"Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. <i>physica status solidi (b)</i>. 2016;253(4):778-782. doi:<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>","bibtex":"@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253}, DOI={<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>}, number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing, Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur}, year={2016}, pages={778–782} }","apa":"Rüsing, M., Wecker, T., Berth, G., As, D. J., &#38; Zrenner, A. (2016). Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. <i>Physica Status Solidi (b)</i>, <i>253</i>(4), 778–782. <a href=\"https://doi.org/10.1002/pssb.201552592\">https://doi.org/10.1002/pssb.201552592</a>","ieee":"M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” <i>physica status solidi (b)</i>, vol. 253, no. 4, pp. 778–782, 2016, doi: <a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>.","chicago":"Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i> 253, no. 4 (2016): 778–82. <a href=\"https://doi.org/10.1002/pssb.201552592\">https://doi.org/10.1002/pssb.201552592</a>.","short":"M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi (b) 253 (2016) 778–782."},"project":[{"grant_number":"231447078","_id":"53","name":"TRR 142"},{"_id":"55","name":"TRR 142 - Project Area B"},{"name":"TRR 142 - Subproject B3","_id":"68","grant_number":"231447078"}]}]