@article{4240,
  abstract     = {{Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well-formed c-GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Ramanspectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films.}},
  author       = {{Rüsing, Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{cubic gallium nitride, dislocation density, HRXRD, Raman spectroscopy}},
  number       = {{4}},
  pages        = {{778--782}},
  publisher    = {{Wiley}},
  title        = {{{Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}}},
  doi          = {{10.1002/pssb.201552592}},
  volume       = {{253}},
  year         = {{2016}},
}