---
_id: '4240'
abstract:
- lang: eng
  text: Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction
    (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC
    (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The
    layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis
    reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for
    growing layer thicknesses, which is caused by a partial compensation of defects.
    The Raman characterization confirms well-formed c-GaN layers. A more detailed
    examination of the longitudinal optical mode hints at a correlation of the FWHM
    of the Raman mode with the dislocation density, which shows the possibility to
    determine dislocation densities by Ramanspectroscopy on a micrometer scale, which
    is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized
    Raman spectra present an alternative way to determine layer thicknesses of thin
    GaN films.
article_type: original
author:
- first_name: Michael
  full_name: Rüsing, Michael
  id: '22501'
  last_name: Rüsing
  orcid: 0000-0003-4682-4577
- first_name: T.
  full_name: Wecker, T.
  last_name: Wecker
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
citation:
  ama: Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and
    HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. <i>physica
    status solidi (b)</i>. 2016;253(4):778-782. doi:<a href="https://doi.org/10.1002/pssb.201552592">10.1002/pssb.201552592</a>
  apa: Rüsing, M., Wecker, T., Berth, G., As, D. J., &#38; Zrenner, A. (2016). Joint
    Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown
    on 3C-SiC. <i>Physica Status Solidi (b)</i>, <i>253</i>(4), 778–782. <a href="https://doi.org/10.1002/pssb.201552592">https://doi.org/10.1002/pssb.201552592</a>
  bibtex: '@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy
    and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253},
    DOI={<a href="https://doi.org/10.1002/pssb.201552592">10.1002/pssb.201552592</a>},
    number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing,
    Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur},
    year={2016}, pages={778–782} }'
  chicago: 'Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner.
    “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers
    Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i> 253, no. 4 (2016): 778–82.
    <a href="https://doi.org/10.1002/pssb.201552592">https://doi.org/10.1002/pssb.201552592</a>.'
  ieee: 'M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy
    and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” <i>physica
    status solidi (b)</i>, vol. 253, no. 4, pp. 778–782, 2016, doi: <a href="https://doi.org/10.1002/pssb.201552592">10.1002/pssb.201552592</a>.'
  mla: Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of
    Cubic Gallium Nitride Layers Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i>,
    vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:<a href="https://doi.org/10.1002/pssb.201552592">10.1002/pssb.201552592</a>.
  short: M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi
    (b) 253 (2016) 778–782.
date_created: 2018-08-29T08:24:01Z
date_updated: 2023-10-09T08:48:35Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.201552592
intvolume: '       253'
issue: '4'
keyword:
- cubic gallium nitride
- dislocation density
- HRXRD
- Raman spectroscopy
language:
- iso: eng
page: 778-782
project:
- _id: '53'
  grant_number: '231447078'
  name: TRR 142
- _id: '55'
  name: TRR 142 - Project Area B
- _id: '68'
  grant_number: '231447078'
  name: TRR 142 - Subproject B3
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers
  grown on 3C-SiC
type: journal_article
user_id: '14931'
volume: 253
year: '2016'
...