[{"doi":"10.1016/0167-9317(92)90420-v","title":"CMOS compatible micromachining by dry silicon-etching techniques","volume":19,"date_created":"2023-01-25T09:28:16Z","author":[{"full_name":"Adams, S.","last_name":"Adams","first_name":"S."},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"publisher":"Elsevier BV","date_updated":"2023-03-21T09:48:55Z","intvolume":"        19","page":"191-194","citation":{"apa":"Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 191–194. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>","bibtex":"@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }","short":"S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.","mla":"Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","ama":"Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>","ieee":"S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 191–194, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","chicago":"Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 191–94. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>."},"year":"2002","issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39916","status":"public","publication":"Microelectronic Engineering","type":"journal_article"},{"title":"Matching analysis of deposition defined 50-nm MOSFET's","doi":"10.1109/16.658845","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:45:40Z","volume":45,"date_created":"2023-01-24T09:23:56Z","author":[{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.F.","full_name":"Goser, K.F.","last_name":"Goser"}],"year":"2002","page":"299-306","intvolume":"        45","citation":{"apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>."},"publication_identifier":{"issn":["0018-9383"]},"publication_status":"published","issue":"1","keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39348","department":[{"_id":"59"}],"user_id":"20179","status":"public","publication":"IEEE Transactions on Electron Devices","type":"journal_article"},{"department":[{"_id":"59"}],"user_id":"20179","_id":"39889","status":"public","type":"journal_article","doi":"10.1016/s0167-9317(99)00122-7","volume":46,"author":[{"first_name":"V.","last_name":"Mankowski","full_name":"Mankowski, V."},{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."}],"date_updated":"2023-03-21T09:58:35Z","intvolume":"        46","page":"413-417","citation":{"apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>, <i>46</i>(1–4), 413–417. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={413–417} }","mla":"Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier BV, 2002, pp. 413–17, doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417. doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i> 46, no. 1–4 (2002): 413–17. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>."},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"publication":"Microelectronic Engineering","title":"12 kV low current cascaded light triggered switch on one silicon chip","date_created":"2023-01-25T09:13:17Z","publisher":"Elsevier BV","year":"2002","issue":"1-4"},{"year":"2002","page":"299-306","intvolume":"        45","citation":{"apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>."},"publication_identifier":{"issn":["0018-9383"]},"publication_status":"published","issue":"1","title":"Matching analysis of deposition defined 50-nm MOSFET's","doi":"10.1109/16.658845","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:58:01Z","volume":45,"date_created":"2023-01-25T09:14:43Z","author":[{"first_name":"J.T.","full_name":"Horstmann, J.T.","last_name":"Horstmann"},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Goser, K.F.","last_name":"Goser","first_name":"K.F."}],"status":"public","publication":"IEEE Transactions on Electron Devices","type":"journal_article","keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39891","department":[{"_id":"59"}],"user_id":"20179"},{"intvolume":"        43","page":"1245-1250","citation":{"ama":"Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250. doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>","chicago":"Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i> 43, no. 7 (2002): 1245–50. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.","ieee":"G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol. 43, no. 7, pp. 1245–1250, 2002, doi: <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","apa":"Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>, <i>43</i>(7), 1245–1250. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>","bibtex":"@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>}, number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250} }","mla":"Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50, doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","short":"G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250."},"year":"2002","issue":"7","publication_identifier":{"issn":["0038-1101"]},"publication_status":"published","doi":"10.1016/s0038-1101(99)00060-x","title":"Mesoscopic transport phenomena in ultrashort channel MOSFETs","volume":43,"date_created":"2023-01-25T09:11:50Z","author":[{"first_name":"G","last_name":"Wirth","full_name":"Wirth, G"},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Horstmann, J.T","last_name":"Horstmann","first_name":"J.T"},{"first_name":"K","full_name":"Goser, K","last_name":"Goser"}],"date_updated":"2023-03-21T09:59:22Z","publisher":"Elsevier BV","status":"public","publication":"Solid-State Electronics","type":"journal_article","language":[{"iso":"eng"}],"keyword":["Materials Chemistry","Electrical and Electronic Engineering","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39886"},{"year":"2002","citation":{"ieee":"R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,” <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>.","chicago":"Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">https://doi.org/10.1016/s0925-9635(01)00373-9</a>.","ama":"Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>","apa":"Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002). Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514. <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">https://doi.org/10.1016/s0925-9635(01)00373-9</a>","bibtex":"@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}, volume={10}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>}, number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}, year={2002}, pages={511–514} }","short":"R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514.","mla":"Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>."},"intvolume":"        10","page":"511-514","publication_status":"published","publication_identifier":{"issn":["0925-9635"]},"issue":"3-7","title":"Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications","doi":"10.1016/s0925-9635(01)00373-9","publisher":"Elsevier BV","date_updated":"2023-03-21T10:03:16Z","date_created":"2023-01-25T09:07:37Z","author":[{"full_name":"Otterbach, R.","last_name":"Otterbach","first_name":"R."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"T.J.","last_name":"Horstmann","full_name":"Horstmann, T.J."},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"volume":10,"status":"public","type":"journal_article","publication":"Diamond and Related Materials","keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39876","user_id":"20179","department":[{"_id":"59"}]},{"user_id":"20179","department":[{"_id":"59"}],"_id":"39877","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","publication":"Microelectronic Engineering","status":"public","author":[{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"full_name":"Vieregge, T.","last_name":"Vieregge","first_name":"T."},{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."}],"date_created":"2023-01-25T09:08:13Z","volume":53,"date_updated":"2023-03-21T10:03:00Z","publisher":"Elsevier BV","doi":"10.1016/s0167-9317(00)00380-4","title":"A structure definition technique for 25 nm lines of silicon and related materials","issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"citation":{"apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 569–572. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>","short":"U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.","bibtex":"@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }","mla":"Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","ieee":"U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","chicago":"Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 569–72. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.","ama":"Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>. 2002;53(1-4):569-572. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>"},"page":"569-572","intvolume":"        53","year":"2002"},{"date_updated":"2023-03-21T10:03:48Z","volume":11,"author":[{"first_name":"R.","full_name":"Otterbach, R.","last_name":"Otterbach"},{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"}],"doi":"10.1016/s0925-9635(01)00703-8","publication_identifier":{"issn":["0925-9635"]},"publication_status":"published","intvolume":"        11","page":"841-844","citation":{"apa":"Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6), 841–844. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>","bibtex":"@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}, volume={11}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>}, number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844} }","short":"R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.","mla":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","ieee":"R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, pp. 841–844, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","chicago":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11, no. 3–6 (2002): 841–44. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.","ama":"Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>"},"_id":"39874","department":[{"_id":"59"}],"user_id":"20179","type":"journal_article","status":"public","publisher":"Elsevier BV","date_created":"2023-01-25T09:05:52Z","title":"Reactive ion etching of CVD-diamond for piezoresistive pressure sensors","issue":"3-6","year":"2002","keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication":"Diamond and Related Materials"},{"publisher":"Elsevier BV","date_created":"2023-05-26T12:21:04Z","title":"Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity","quality_controlled":"1","issue":"39","year":"2002","keyword":["Computer Science Applications","General Physics and Astronomy","Mechanical Engineering","Mechanics of Materials","Computational Mechanics"],"language":[{"iso":"eng"}],"publication":"Computer Methods in Applied Mechanics and Engineering","date_updated":"2023-05-26T12:22:12Z","volume":190,"author":[{"first_name":"Rolf","last_name":"Mahnken","id":"335","full_name":"Mahnken, Rolf"}],"doi":"10.1016/s0045-7825(00)00364-9","publication_identifier":{"issn":["0045-7825"]},"publication_status":"published","page":"5057-5080","intvolume":"       190","citation":{"ama":"Mahnken R. Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity. <i>Computer Methods in Applied Mechanics and Engineering</i>. 2002;190(39):5057-5080. doi:<a href=\"https://doi.org/10.1016/s0045-7825(00)00364-9\">10.1016/s0045-7825(00)00364-9</a>","ieee":"R. Mahnken, “Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity,” <i>Computer Methods in Applied Mechanics and Engineering</i>, vol. 190, no. 39, pp. 5057–5080, 2002, doi: <a href=\"https://doi.org/10.1016/s0045-7825(00)00364-9\">10.1016/s0045-7825(00)00364-9</a>.","chicago":"Mahnken, Rolf. “Strength Difference in Compression and Tension and Pressure Dependence of Yielding in Elasto-Plasticity.” <i>Computer Methods in Applied Mechanics and Engineering</i> 190, no. 39 (2002): 5057–80. <a href=\"https://doi.org/10.1016/s0045-7825(00)00364-9\">https://doi.org/10.1016/s0045-7825(00)00364-9</a>.","apa":"Mahnken, R. (2002). Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity. <i>Computer Methods in Applied Mechanics and Engineering</i>, <i>190</i>(39), 5057–5080. <a href=\"https://doi.org/10.1016/s0045-7825(00)00364-9\">https://doi.org/10.1016/s0045-7825(00)00364-9</a>","short":"R. Mahnken, Computer Methods in Applied Mechanics and Engineering 190 (2002) 5057–5080.","bibtex":"@article{Mahnken_2002, title={Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity}, volume={190}, DOI={<a href=\"https://doi.org/10.1016/s0045-7825(00)00364-9\">10.1016/s0045-7825(00)00364-9</a>}, number={39}, journal={Computer Methods in Applied Mechanics and Engineering}, publisher={Elsevier BV}, author={Mahnken, Rolf}, year={2002}, pages={5057–5080} }","mla":"Mahnken, Rolf. “Strength Difference in Compression and Tension and Pressure Dependence of Yielding in Elasto-Plasticity.” <i>Computer Methods in Applied Mechanics and Engineering</i>, vol. 190, no. 39, Elsevier BV, 2002, pp. 5057–80, doi:<a href=\"https://doi.org/10.1016/s0045-7825(00)00364-9\">10.1016/s0045-7825(00)00364-9</a>."},"_id":"45307","department":[{"_id":"9"},{"_id":"154"}],"user_id":"335","type":"journal_article","status":"public"},{"publication_status":"published","quality_controlled":"1","publication_identifier":{"issn":["0363-9061","1096-9853"]},"issue":"5","year":"2002","citation":{"chicago":"Mahnken, Rolf, and P. Steinmann. “A Finite Element Algorithm for Parameter Identification of Material Models for Fluid Saturated Porous Media.” <i>International Journal for Numerical and Analytical Methods in Geomechanics</i> 25, no. 5 (2002): 415–34. <a href=\"https://doi.org/10.1002/nag.136\">https://doi.org/10.1002/nag.136</a>.","ieee":"R. Mahnken and P. Steinmann, “A finite element algorithm for parameter identification of material models for fluid saturated porous media,” <i>International Journal for Numerical and Analytical Methods in Geomechanics</i>, vol. 25, no. 5, pp. 415–434, 2002, doi: <a href=\"https://doi.org/10.1002/nag.136\">10.1002/nag.136</a>.","ama":"Mahnken R, Steinmann P. A finite element algorithm for parameter identification of material models for fluid saturated porous media. <i>International Journal for Numerical and Analytical Methods in Geomechanics</i>. 2002;25(5):415-434. doi:<a href=\"https://doi.org/10.1002/nag.136\">10.1002/nag.136</a>","mla":"Mahnken, Rolf, and P. Steinmann. “A Finite Element Algorithm for Parameter Identification of Material Models for Fluid Saturated Porous Media.” <i>International Journal for Numerical and Analytical Methods in Geomechanics</i>, vol. 25, no. 5, Wiley, 2002, pp. 415–34, doi:<a href=\"https://doi.org/10.1002/nag.136\">10.1002/nag.136</a>.","bibtex":"@article{Mahnken_Steinmann_2002, title={A finite element algorithm for parameter identification of material models for fluid saturated porous media}, volume={25}, DOI={<a href=\"https://doi.org/10.1002/nag.136\">10.1002/nag.136</a>}, number={5}, journal={International Journal for Numerical and Analytical Methods in Geomechanics}, publisher={Wiley}, author={Mahnken, Rolf and Steinmann, P.}, year={2002}, pages={415–434} }","short":"R. Mahnken, P. Steinmann, International Journal for Numerical and Analytical Methods in Geomechanics 25 (2002) 415–434.","apa":"Mahnken, R., &#38; Steinmann, P. (2002). A finite element algorithm for parameter identification of material models for fluid saturated porous media. <i>International Journal for Numerical and Analytical Methods in Geomechanics</i>, <i>25</i>(5), 415–434. <a href=\"https://doi.org/10.1002/nag.136\">https://doi.org/10.1002/nag.136</a>"},"page":"415-434","intvolume":"        25","publisher":"Wiley","date_updated":"2023-05-31T11:55:54Z","author":[{"id":"335","full_name":"Mahnken, Rolf","last_name":"Mahnken","first_name":"Rolf"},{"full_name":"Steinmann, P.","last_name":"Steinmann","first_name":"P."}],"date_created":"2023-05-31T11:55:35Z","volume":25,"title":"A finite element algorithm for parameter identification of material models for fluid saturated porous media","doi":"10.1002/nag.136","type":"journal_article","publication":"International Journal for Numerical and Analytical Methods in Geomechanics","status":"public","_id":"45413","user_id":"335","department":[{"_id":"9"},{"_id":"154"}],"keyword":["Mechanics of Materials","Geotechnical Engineering and Engineering Geology","General Materials Science","Computational Mechanics"],"language":[{"iso":"eng"}]},{"department":[{"_id":"9"},{"_id":"154"}],"user_id":"335","_id":"45412","type":"journal_article","status":"public","volume":190,"author":[{"last_name":"Mahnken","full_name":"Mahnken, Rolf","id":"335","first_name":"Rolf"},{"first_name":"M.","last_name":"Kohlmeier","full_name":"Kohlmeier, M."}],"date_updated":"2023-05-31T11:53:38Z","doi":"10.1016/s0045-7825(00)00317-0","publication_identifier":{"issn":["0045-7825"]},"publication_status":"published","page":"4259-4278","intvolume":"       190","citation":{"apa":"Mahnken, R., &#38; Kohlmeier, M. (2002). Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation. <i>Computer Methods in Applied Mechanics and Engineering</i>, <i>190</i>(32–33), 4259–4278. <a href=\"https://doi.org/10.1016/s0045-7825(00)00317-0\">https://doi.org/10.1016/s0045-7825(00)00317-0</a>","mla":"Mahnken, Rolf, and M. Kohlmeier. “Finite Element Simulation for Rock Salt with Dilatancy Boundary Coupled to Fluid Permeation.” <i>Computer Methods in Applied Mechanics and Engineering</i>, vol. 190, no. 32–33, Elsevier BV, 2002, pp. 4259–78, doi:<a href=\"https://doi.org/10.1016/s0045-7825(00)00317-0\">10.1016/s0045-7825(00)00317-0</a>.","short":"R. Mahnken, M. Kohlmeier, Computer Methods in Applied Mechanics and Engineering 190 (2002) 4259–4278.","bibtex":"@article{Mahnken_Kohlmeier_2002, title={Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation}, volume={190}, DOI={<a href=\"https://doi.org/10.1016/s0045-7825(00)00317-0\">10.1016/s0045-7825(00)00317-0</a>}, number={32–33}, journal={Computer Methods in Applied Mechanics and Engineering}, publisher={Elsevier BV}, author={Mahnken, Rolf and Kohlmeier, M.}, year={2002}, pages={4259–4278} }","ama":"Mahnken R, Kohlmeier M. Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation. <i>Computer Methods in Applied Mechanics and Engineering</i>. 2002;190(32-33):4259-4278. doi:<a href=\"https://doi.org/10.1016/s0045-7825(00)00317-0\">10.1016/s0045-7825(00)00317-0</a>","chicago":"Mahnken, Rolf, and M. Kohlmeier. “Finite Element Simulation for Rock Salt with Dilatancy Boundary Coupled to Fluid Permeation.” <i>Computer Methods in Applied Mechanics and Engineering</i> 190, no. 32–33 (2002): 4259–78. <a href=\"https://doi.org/10.1016/s0045-7825(00)00317-0\">https://doi.org/10.1016/s0045-7825(00)00317-0</a>.","ieee":"R. Mahnken and M. Kohlmeier, “Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation,” <i>Computer Methods in Applied Mechanics and Engineering</i>, vol. 190, no. 32–33, pp. 4259–4278, 2002, doi: <a href=\"https://doi.org/10.1016/s0045-7825(00)00317-0\">10.1016/s0045-7825(00)00317-0</a>."},"language":[{"iso":"eng"}],"keyword":["Computer Science Applications","General Physics and Astronomy","Mechanical Engineering","Mechanics of Materials","Computational Mechanics"],"publication":"Computer Methods in Applied Mechanics and Engineering","date_created":"2023-05-31T11:52:51Z","publisher":"Elsevier BV","title":"Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation","issue":"32-33","quality_controlled":"1","year":"2002"},{"doi":"10.1016/s0045-7949(99)00089-9","title":"Implicit integration scheme and its consistent linearization for an elastoplastic-damage model with application to concrete","date_created":"2023-05-31T12:05:43Z","author":[{"first_name":"Rolf","id":"335","full_name":"Mahnken, Rolf","last_name":"Mahnken"},{"last_name":"Tikhomirov","full_name":"Tikhomirov, D.","first_name":"D."},{"first_name":"E.","full_name":"Stein, E.","last_name":"Stein"}],"volume":75,"date_updated":"2023-05-31T12:06:27Z","publisher":"Elsevier BV","citation":{"ieee":"R. Mahnken, D. Tikhomirov, and E. Stein, “Implicit integration scheme and its consistent linearization for an elastoplastic-damage model with application to concrete,” <i>Computers &#38;amp; Structures</i>, vol. 75, no. 2, pp. 135–143, 2002, doi: <a href=\"https://doi.org/10.1016/s0045-7949(99)00089-9\">10.1016/s0045-7949(99)00089-9</a>.","chicago":"Mahnken, Rolf, D. Tikhomirov, and E. Stein. “Implicit Integration Scheme and Its Consistent Linearization for an Elastoplastic-Damage Model with Application to Concrete.” <i>Computers &#38;amp; Structures</i> 75, no. 2 (2002): 135–43. <a href=\"https://doi.org/10.1016/s0045-7949(99)00089-9\">https://doi.org/10.1016/s0045-7949(99)00089-9</a>.","ama":"Mahnken R, Tikhomirov D, Stein E. Implicit integration scheme and its consistent linearization for an elastoplastic-damage model with application to concrete. <i>Computers &#38;amp; Structures</i>. 2002;75(2):135-143. doi:<a href=\"https://doi.org/10.1016/s0045-7949(99)00089-9\">10.1016/s0045-7949(99)00089-9</a>","apa":"Mahnken, R., Tikhomirov, D., &#38; Stein, E. (2002). Implicit integration scheme and its consistent linearization for an elastoplastic-damage model with application to concrete. <i>Computers &#38;amp; Structures</i>, <i>75</i>(2), 135–143. <a href=\"https://doi.org/10.1016/s0045-7949(99)00089-9\">https://doi.org/10.1016/s0045-7949(99)00089-9</a>","short":"R. Mahnken, D. Tikhomirov, E. Stein, Computers &#38;amp; Structures 75 (2002) 135–143.","bibtex":"@article{Mahnken_Tikhomirov_Stein_2002, title={Implicit integration scheme and its consistent linearization for an elastoplastic-damage model with application to concrete}, volume={75}, DOI={<a href=\"https://doi.org/10.1016/s0045-7949(99)00089-9\">10.1016/s0045-7949(99)00089-9</a>}, number={2}, journal={Computers &#38;amp; Structures}, publisher={Elsevier BV}, author={Mahnken, Rolf and Tikhomirov, D. and Stein, E.}, year={2002}, pages={135–143} }","mla":"Mahnken, Rolf, et al. “Implicit Integration Scheme and Its Consistent Linearization for an Elastoplastic-Damage Model with Application to Concrete.” <i>Computers &#38;amp; Structures</i>, vol. 75, no. 2, Elsevier BV, 2002, pp. 135–43, doi:<a href=\"https://doi.org/10.1016/s0045-7949(99)00089-9\">10.1016/s0045-7949(99)00089-9</a>."},"intvolume":"        75","page":"135-143","year":"2002","issue":"2","publication_status":"published","quality_controlled":"1","publication_identifier":{"issn":["0045-7949"]},"language":[{"iso":"eng"}],"keyword":["Computer Science Applications","Mechanical Engineering","General Materials Science","Modeling and Simulation","Civil and Structural Engineering"],"user_id":"335","department":[{"_id":"9"},{"_id":"154"}],"_id":"45418","status":"public","type":"journal_article","publication":"Computers &amp; Structures"},{"volume":74,"author":[{"last_name":"Mahnken","id":"335","full_name":"Mahnken, Rolf","first_name":"Rolf"}],"date_created":"2023-05-31T12:13:28Z","publisher":"Elsevier BV","date_updated":"2023-05-31T12:13:59Z","doi":"10.1016/s0045-7949(98)00296-x","title":"A comprehensive study of a multiplicative elastoplasticity model coupled to damage including parameter identification","issue":"2","quality_controlled":"1","publication_identifier":{"issn":["0045-7949"]},"publication_status":"published","intvolume":"        74","page":"179-200","citation":{"chicago":"Mahnken, Rolf. “A Comprehensive Study of a Multiplicative Elastoplasticity Model Coupled to Damage Including Parameter Identification.” <i>Computers &#38;amp; Structures</i> 74, no. 2 (2002): 179–200. <a href=\"https://doi.org/10.1016/s0045-7949(98)00296-x\">https://doi.org/10.1016/s0045-7949(98)00296-x</a>.","ieee":"R. Mahnken, “A comprehensive study of a multiplicative elastoplasticity model coupled to damage including parameter identification,” <i>Computers &#38;amp; Structures</i>, vol. 74, no. 2, pp. 179–200, 2002, doi: <a href=\"https://doi.org/10.1016/s0045-7949(98)00296-x\">10.1016/s0045-7949(98)00296-x</a>.","ama":"Mahnken R. A comprehensive study of a multiplicative elastoplasticity model coupled to damage including parameter identification. <i>Computers &#38;amp; Structures</i>. 2002;74(2):179-200. doi:<a href=\"https://doi.org/10.1016/s0045-7949(98)00296-x\">10.1016/s0045-7949(98)00296-x</a>","apa":"Mahnken, R. (2002). A comprehensive study of a multiplicative elastoplasticity model coupled to damage including parameter identification. <i>Computers &#38;amp; Structures</i>, <i>74</i>(2), 179–200. <a href=\"https://doi.org/10.1016/s0045-7949(98)00296-x\">https://doi.org/10.1016/s0045-7949(98)00296-x</a>","short":"R. Mahnken, Computers &#38;amp; Structures 74 (2002) 179–200.","bibtex":"@article{Mahnken_2002, title={A comprehensive study of a multiplicative elastoplasticity model coupled to damage including parameter identification}, volume={74}, DOI={<a href=\"https://doi.org/10.1016/s0045-7949(98)00296-x\">10.1016/s0045-7949(98)00296-x</a>}, number={2}, journal={Computers &#38;amp; Structures}, publisher={Elsevier BV}, author={Mahnken, Rolf}, year={2002}, pages={179–200} }","mla":"Mahnken, Rolf. “A Comprehensive Study of a Multiplicative Elastoplasticity Model Coupled to Damage Including Parameter Identification.” <i>Computers &#38;amp; Structures</i>, vol. 74, no. 2, Elsevier BV, 2002, pp. 179–200, doi:<a href=\"https://doi.org/10.1016/s0045-7949(98)00296-x\">10.1016/s0045-7949(98)00296-x</a>."},"year":"2002","department":[{"_id":"9"},{"_id":"154"}],"user_id":"335","_id":"45422","language":[{"iso":"eng"}],"keyword":["Computer Science Applications","Mechanical Engineering","General Materials Science","Modeling and Simulation","Civil and Structural Engineering"],"publication":"Computers &amp; Structures","type":"journal_article","status":"public"},{"title":"Parameter identification of gradient enhanced damage models with the finite element method","date_created":"2023-05-31T12:15:51Z","publisher":"Elsevier BV","year":"2002","issue":"5","quality_controlled":"1","language":[{"iso":"eng"}],"keyword":["General Physics and Astronomy","Mechanical Engineering","Mechanics of Materials","General Materials Science"],"publication":"European Journal of Mechanics - A/Solids","doi":"10.1016/s0997-7538(99)00127-8","author":[{"full_name":"Mahnken, Rolf","id":"335","last_name":"Mahnken","first_name":"Rolf"},{"full_name":"Kuhl, Ellen","last_name":"Kuhl","first_name":"Ellen"}],"volume":18,"date_updated":"2023-05-31T12:17:11Z","citation":{"chicago":"Mahnken, Rolf, and Ellen Kuhl. “Parameter Identification of Gradient Enhanced Damage Models with the Finite Element Method.” <i>European Journal of Mechanics - A/Solids</i> 18, no. 5 (2002): 819–35. <a href=\"https://doi.org/10.1016/s0997-7538(99)00127-8\">https://doi.org/10.1016/s0997-7538(99)00127-8</a>.","ieee":"R. Mahnken and E. Kuhl, “Parameter identification of gradient enhanced damage models with the finite element method,” <i>European Journal of Mechanics - A/Solids</i>, vol. 18, no. 5, pp. 819–835, 2002, doi: <a href=\"https://doi.org/10.1016/s0997-7538(99)00127-8\">10.1016/s0997-7538(99)00127-8</a>.","ama":"Mahnken R, Kuhl E. Parameter identification of gradient enhanced damage models with the finite element method. <i>European Journal of Mechanics - A/Solids</i>. 2002;18(5):819-835. doi:<a href=\"https://doi.org/10.1016/s0997-7538(99)00127-8\">10.1016/s0997-7538(99)00127-8</a>","bibtex":"@article{Mahnken_Kuhl_2002, title={Parameter identification of gradient enhanced damage models with the finite element method}, volume={18}, DOI={<a href=\"https://doi.org/10.1016/s0997-7538(99)00127-8\">10.1016/s0997-7538(99)00127-8</a>}, number={5}, journal={European Journal of Mechanics - A/Solids}, publisher={Elsevier BV}, author={Mahnken, Rolf and Kuhl, Ellen}, year={2002}, pages={819–835} }","short":"R. Mahnken, E. Kuhl, European Journal of Mechanics - A/Solids 18 (2002) 819–835.","mla":"Mahnken, Rolf, and Ellen Kuhl. “Parameter Identification of Gradient Enhanced Damage Models with the Finite Element Method.” <i>European Journal of Mechanics - A/Solids</i>, vol. 18, no. 5, Elsevier BV, 2002, pp. 819–35, doi:<a href=\"https://doi.org/10.1016/s0997-7538(99)00127-8\">10.1016/s0997-7538(99)00127-8</a>.","apa":"Mahnken, R., &#38; Kuhl, E. (2002). Parameter identification of gradient enhanced damage models with the finite element method. <i>European Journal of Mechanics - A/Solids</i>, <i>18</i>(5), 819–835. <a href=\"https://doi.org/10.1016/s0997-7538(99)00127-8\">https://doi.org/10.1016/s0997-7538(99)00127-8</a>"},"page":"819-835","intvolume":"        18","publication_status":"published","publication_identifier":{"issn":["0997-7538"]},"user_id":"335","department":[{"_id":"9"},{"_id":"154"}],"_id":"45424","status":"public","type":"journal_article"},{"year":"2002","quality_controlled":"1","issue":"3-4","title":"A unified approach for parameter identification of inelastic material models in the frame of the finite element method","publisher":"Elsevier BV","date_created":"2023-05-31T12:22:58Z","publication":"Computer Methods in Applied Mechanics and Engineering","keyword":["Computer Science Applications","General Physics and Astronomy","Mechanical Engineering","Mechanics of Materials","Computational Mechanics"],"language":[{"iso":"eng"}],"citation":{"ieee":"R. Mahnken and E. Stein, “A unified approach for parameter identification of inelastic material models in the frame of the finite element method,” <i>Computer Methods in Applied Mechanics and Engineering</i>, vol. 136, no. 3–4, pp. 225–258, 2002, doi: <a href=\"https://doi.org/10.1016/0045-7825(96)00991-7\">10.1016/0045-7825(96)00991-7</a>.","chicago":"Mahnken, Rolf, and Erwin Stein. “A Unified Approach for Parameter Identification of Inelastic Material Models in the Frame of the Finite Element Method.” <i>Computer Methods in Applied Mechanics and Engineering</i> 136, no. 3–4 (2002): 225–58. <a href=\"https://doi.org/10.1016/0045-7825(96)00991-7\">https://doi.org/10.1016/0045-7825(96)00991-7</a>.","ama":"Mahnken R, Stein E. A unified approach for parameter identification of inelastic material models in the frame of the finite element method. <i>Computer Methods in Applied Mechanics and Engineering</i>. 2002;136(3-4):225-258. doi:<a href=\"https://doi.org/10.1016/0045-7825(96)00991-7\">10.1016/0045-7825(96)00991-7</a>","mla":"Mahnken, Rolf, and Erwin Stein. “A Unified Approach for Parameter Identification of Inelastic Material Models in the Frame of the Finite Element Method.” <i>Computer Methods in Applied Mechanics and Engineering</i>, vol. 136, no. 3–4, Elsevier BV, 2002, pp. 225–58, doi:<a href=\"https://doi.org/10.1016/0045-7825(96)00991-7\">10.1016/0045-7825(96)00991-7</a>.","bibtex":"@article{Mahnken_Stein_2002, title={A unified approach for parameter identification of inelastic material models in the frame of the finite element method}, volume={136}, DOI={<a href=\"https://doi.org/10.1016/0045-7825(96)00991-7\">10.1016/0045-7825(96)00991-7</a>}, number={3–4}, journal={Computer Methods in Applied Mechanics and Engineering}, publisher={Elsevier BV}, author={Mahnken, Rolf and Stein, Erwin}, year={2002}, pages={225–258} }","short":"R. Mahnken, E. Stein, Computer Methods in Applied Mechanics and Engineering 136 (2002) 225–258.","apa":"Mahnken, R., &#38; Stein, E. (2002). A unified approach for parameter identification of inelastic material models in the frame of the finite element method. <i>Computer Methods in Applied Mechanics and Engineering</i>, <i>136</i>(3–4), 225–258. <a href=\"https://doi.org/10.1016/0045-7825(96)00991-7\">https://doi.org/10.1016/0045-7825(96)00991-7</a>"},"intvolume":"       136","page":"225-258","publication_status":"published","publication_identifier":{"issn":["0045-7825"]},"doi":"10.1016/0045-7825(96)00991-7","date_updated":"2023-05-31T12:23:36Z","author":[{"first_name":"Rolf","id":"335","full_name":"Mahnken, Rolf","last_name":"Mahnken"},{"first_name":"Erwin","last_name":"Stein","full_name":"Stein, Erwin"}],"volume":136,"status":"public","type":"journal_article","_id":"45429","user_id":"335","department":[{"_id":"9"},{"_id":"154"}]},{"status":"public","type":"journal_article","publication":"Modelling and Simulation in Materials Science and Engineering","keyword":["Computer Science Applications","Mechanics of Materials","Condensed Matter Physics","General Materials Science","Modeling and Simulation"],"language":[{"iso":"eng"}],"_id":"45432","user_id":"335","department":[{"_id":"9"},{"_id":"154"}],"year":"2002","citation":{"apa":"Mahnken, R., &#38; Stein, E. (2002). The identification of parameters for visco-plastic models via finite-element methods and gradient methods. <i>Modelling and Simulation in Materials Science and Engineering</i>, <i>2</i>(3A), 597–616. <a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">https://doi.org/10.1088/0965-0393/2/3a/013</a>","mla":"Mahnken, Rolf, and E. Stein. “The Identification of Parameters for Visco-Plastic Models via Finite-Element Methods and Gradient Methods.” <i>Modelling and Simulation in Materials Science and Engineering</i>, vol. 2, no. 3A, IOP Publishing, 2002, pp. 597–616, doi:<a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">10.1088/0965-0393/2/3a/013</a>.","short":"R. Mahnken, E. Stein, Modelling and Simulation in Materials Science and Engineering 2 (2002) 597–616.","bibtex":"@article{Mahnken_Stein_2002, title={The identification of parameters for visco-plastic models via finite-element methods and gradient methods}, volume={2}, DOI={<a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">10.1088/0965-0393/2/3a/013</a>}, number={3A}, journal={Modelling and Simulation in Materials Science and Engineering}, publisher={IOP Publishing}, author={Mahnken, Rolf and Stein, E}, year={2002}, pages={597–616} }","chicago":"Mahnken, Rolf, and E Stein. “The Identification of Parameters for Visco-Plastic Models via Finite-Element Methods and Gradient Methods.” <i>Modelling and Simulation in Materials Science and Engineering</i> 2, no. 3A (2002): 597–616. <a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">https://doi.org/10.1088/0965-0393/2/3a/013</a>.","ieee":"R. Mahnken and E. Stein, “The identification of parameters for visco-plastic models via finite-element methods and gradient methods,” <i>Modelling and Simulation in Materials Science and Engineering</i>, vol. 2, no. 3A, pp. 597–616, 2002, doi: <a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">10.1088/0965-0393/2/3a/013</a>.","ama":"Mahnken R, Stein E. The identification of parameters for visco-plastic models via finite-element methods and gradient methods. <i>Modelling and Simulation in Materials Science and Engineering</i>. 2002;2(3A):597-616. doi:<a href=\"https://doi.org/10.1088/0965-0393/2/3a/013\">10.1088/0965-0393/2/3a/013</a>"},"page":"597-616","intvolume":"         2","publication_status":"published","quality_controlled":"1","publication_identifier":{"issn":["0965-0393","1361-651X"]},"issue":"3A","title":"The identification of parameters for visco-plastic models via finite-element methods and gradient methods","doi":"10.1088/0965-0393/2/3a/013","date_updated":"2023-05-31T12:28:27Z","publisher":"IOP Publishing","date_created":"2023-05-31T12:28:01Z","author":[{"last_name":"Mahnken","full_name":"Mahnken, Rolf","id":"335","first_name":"Rolf"},{"first_name":"E","full_name":"Stein, E","last_name":"Stein"}],"volume":2},{"issue":"4","quality_controlled":"1","year":"2002","date_created":"2023-05-31T12:24:47Z","publisher":"Elsevier BV","title":"Parameter identification for viscoplastic models based on analytical derivatives of a least-squares functional and stability investigations","publication":"International Journal of Plasticity","language":[{"iso":"eng"}],"keyword":["Mechanical Engineering","Mechanics of Materials","General Materials Science"],"publication_status":"published","publication_identifier":{"issn":["0749-6419"]},"citation":{"ama":"Mahnken R, Stein E. Parameter identification for viscoplastic models based on analytical derivatives of a least-squares functional and stability investigations. <i>International Journal of Plasticity</i>. 2002;12(4):451-479. doi:<a href=\"https://doi.org/10.1016/s0749-6419(95)00016-x\">10.1016/s0749-6419(95)00016-x</a>","ieee":"R. Mahnken and E. Stein, “Parameter identification for viscoplastic models based on analytical derivatives of a least-squares functional and stability investigations,” <i>International Journal of Plasticity</i>, vol. 12, no. 4, pp. 451–479, 2002, doi: <a href=\"https://doi.org/10.1016/s0749-6419(95)00016-x\">10.1016/s0749-6419(95)00016-x</a>.","chicago":"Mahnken, Rolf, and Erwin Stein. “Parameter Identification for Viscoplastic Models Based on Analytical Derivatives of a Least-Squares Functional and Stability Investigations.” <i>International Journal of Plasticity</i> 12, no. 4 (2002): 451–79. <a href=\"https://doi.org/10.1016/s0749-6419(95)00016-x\">https://doi.org/10.1016/s0749-6419(95)00016-x</a>.","apa":"Mahnken, R., &#38; Stein, E. (2002). Parameter identification for viscoplastic models based on analytical derivatives of a least-squares functional and stability investigations. <i>International Journal of Plasticity</i>, <i>12</i>(4), 451–479. <a href=\"https://doi.org/10.1016/s0749-6419(95)00016-x\">https://doi.org/10.1016/s0749-6419(95)00016-x</a>","short":"R. Mahnken, E. Stein, International Journal of Plasticity 12 (2002) 451–479.","mla":"Mahnken, Rolf, and Erwin Stein. “Parameter Identification for Viscoplastic Models Based on Analytical Derivatives of a Least-Squares Functional and Stability Investigations.” <i>International Journal of Plasticity</i>, vol. 12, no. 4, Elsevier BV, 2002, pp. 451–79, doi:<a href=\"https://doi.org/10.1016/s0749-6419(95)00016-x\">10.1016/s0749-6419(95)00016-x</a>.","bibtex":"@article{Mahnken_Stein_2002, title={Parameter identification for viscoplastic models based on analytical derivatives of a least-squares functional and stability investigations}, volume={12}, DOI={<a href=\"https://doi.org/10.1016/s0749-6419(95)00016-x\">10.1016/s0749-6419(95)00016-x</a>}, number={4}, journal={International Journal of Plasticity}, publisher={Elsevier BV}, author={Mahnken, Rolf and Stein, Erwin}, year={2002}, pages={451–479} }"},"page":"451-479","intvolume":"        12","author":[{"first_name":"Rolf","last_name":"Mahnken","id":"335","full_name":"Mahnken, Rolf"},{"full_name":"Stein, Erwin","last_name":"Stein","first_name":"Erwin"}],"volume":12,"date_updated":"2023-05-31T12:25:19Z","doi":"10.1016/s0749-6419(95)00016-x","type":"journal_article","status":"public","user_id":"335","department":[{"_id":"9"},{"_id":"154"}],"_id":"45430"},{"doi":"10.1016/s0045-7825(97)00008-x","title":"Parameter identification for finite deformation elasto-plasticity in principal directions","volume":147,"author":[{"first_name":"Rolf","last_name":"Mahnken","full_name":"Mahnken, Rolf","id":"335"},{"first_name":"Erwin","full_name":"Stein, Erwin","last_name":"Stein"}],"date_created":"2023-05-31T12:21:53Z","date_updated":"2023-05-31T12:22:12Z","publisher":"Elsevier BV","intvolume":"       147","page":"17-39","citation":{"apa":"Mahnken, R., &#38; Stein, E. (2002). Parameter identification for finite deformation elasto-plasticity in principal directions. <i>Computer Methods in Applied Mechanics and Engineering</i>, <i>147</i>(1–2), 17–39. <a href=\"https://doi.org/10.1016/s0045-7825(97)00008-x\">https://doi.org/10.1016/s0045-7825(97)00008-x</a>","mla":"Mahnken, Rolf, and Erwin Stein. “Parameter Identification for Finite Deformation Elasto-Plasticity in Principal Directions.” <i>Computer Methods in Applied Mechanics and Engineering</i>, vol. 147, no. 1–2, Elsevier BV, 2002, pp. 17–39, doi:<a href=\"https://doi.org/10.1016/s0045-7825(97)00008-x\">10.1016/s0045-7825(97)00008-x</a>.","bibtex":"@article{Mahnken_Stein_2002, title={Parameter identification for finite deformation elasto-plasticity in principal directions}, volume={147}, DOI={<a href=\"https://doi.org/10.1016/s0045-7825(97)00008-x\">10.1016/s0045-7825(97)00008-x</a>}, number={1–2}, journal={Computer Methods in Applied Mechanics and Engineering}, publisher={Elsevier BV}, author={Mahnken, Rolf and Stein, Erwin}, year={2002}, pages={17–39} }","short":"R. Mahnken, E. Stein, Computer Methods in Applied Mechanics and Engineering 147 (2002) 17–39.","ama":"Mahnken R, Stein E. Parameter identification for finite deformation elasto-plasticity in principal directions. <i>Computer Methods in Applied Mechanics and Engineering</i>. 2002;147(1-2):17-39. doi:<a href=\"https://doi.org/10.1016/s0045-7825(97)00008-x\">10.1016/s0045-7825(97)00008-x</a>","ieee":"R. Mahnken and E. Stein, “Parameter identification for finite deformation elasto-plasticity in principal directions,” <i>Computer Methods in Applied Mechanics and Engineering</i>, vol. 147, no. 1–2, pp. 17–39, 2002, doi: <a href=\"https://doi.org/10.1016/s0045-7825(97)00008-x\">10.1016/s0045-7825(97)00008-x</a>.","chicago":"Mahnken, Rolf, and Erwin Stein. “Parameter Identification for Finite Deformation Elasto-Plasticity in Principal Directions.” <i>Computer Methods in Applied Mechanics and Engineering</i> 147, no. 1–2 (2002): 17–39. <a href=\"https://doi.org/10.1016/s0045-7825(97)00008-x\">https://doi.org/10.1016/s0045-7825(97)00008-x</a>."},"year":"2002","issue":"1-2","quality_controlled":"1","publication_identifier":{"issn":["0045-7825"]},"publication_status":"published","language":[{"iso":"eng"}],"keyword":["Computer Science Applications","General Physics and Astronomy","Mechanical Engineering","Mechanics of Materials","Computational Mechanics"],"department":[{"_id":"9"},{"_id":"154"}],"user_id":"335","_id":"45428","status":"public","publication":"Computer Methods in Applied Mechanics and Engineering","type":"journal_article"},{"_id":"45426","user_id":"335","department":[{"_id":"9"},{"_id":"154"}],"type":"journal_article","status":"public","date_updated":"2023-05-31T12:20:03Z","author":[{"id":"335","full_name":"Mahnken, Rolf","last_name":"Mahnken","first_name":"Rolf"}],"volume":15,"doi":"10.1016/s0749-6419(99)00029-7","publication_status":"published","publication_identifier":{"issn":["0749-6419"]},"citation":{"ieee":"R. Mahnken, “Aspects on the finite-element implementation of the Gurson model including parameter identification,” <i>International Journal of Plasticity</i>, vol. 15, no. 11, pp. 1111–1137, 2002, doi: <a href=\"https://doi.org/10.1016/s0749-6419(99)00029-7\">10.1016/s0749-6419(99)00029-7</a>.","chicago":"Mahnken, Rolf. “Aspects on the Finite-Element Implementation of the Gurson Model Including Parameter Identification.” <i>International Journal of Plasticity</i> 15, no. 11 (2002): 1111–37. <a href=\"https://doi.org/10.1016/s0749-6419(99)00029-7\">https://doi.org/10.1016/s0749-6419(99)00029-7</a>.","ama":"Mahnken R. Aspects on the finite-element implementation of the Gurson model including parameter identification. <i>International Journal of Plasticity</i>. 2002;15(11):1111-1137. doi:<a href=\"https://doi.org/10.1016/s0749-6419(99)00029-7\">10.1016/s0749-6419(99)00029-7</a>","mla":"Mahnken, Rolf. “Aspects on the Finite-Element Implementation of the Gurson Model Including Parameter Identification.” <i>International Journal of Plasticity</i>, vol. 15, no. 11, Elsevier BV, 2002, pp. 1111–37, doi:<a href=\"https://doi.org/10.1016/s0749-6419(99)00029-7\">10.1016/s0749-6419(99)00029-7</a>.","bibtex":"@article{Mahnken_2002, title={Aspects on the finite-element implementation of the Gurson model including parameter identification}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/s0749-6419(99)00029-7\">10.1016/s0749-6419(99)00029-7</a>}, number={11}, journal={International Journal of Plasticity}, publisher={Elsevier BV}, author={Mahnken, Rolf}, year={2002}, pages={1111–1137} }","short":"R. Mahnken, International Journal of Plasticity 15 (2002) 1111–1137.","apa":"Mahnken, R. (2002). Aspects on the finite-element implementation of the Gurson model including parameter identification. <i>International Journal of Plasticity</i>, <i>15</i>(11), 1111–1137. <a href=\"https://doi.org/10.1016/s0749-6419(99)00029-7\">https://doi.org/10.1016/s0749-6419(99)00029-7</a>"},"page":"1111-1137","intvolume":"        15","keyword":["Mechanical Engineering","Mechanics of Materials","General Materials Science"],"language":[{"iso":"eng"}],"publication":"International Journal of Plasticity","publisher":"Elsevier BV","date_created":"2023-05-31T12:18:49Z","title":"Aspects on the finite-element implementation of the Gurson model including parameter identification","quality_controlled":"1","issue":"11","year":"2002"},{"type":"journal_article","status":"public","user_id":"466","department":[{"_id":"2"},{"_id":"315"}],"_id":"35365","extern":"1","article_type":"original","publication_status":"published","publication_identifier":{"issn":["0148-6055","1520-8516"]},"citation":{"ama":"Thiele T, Berret J-F, Müller S, Schmidt C. Rheology and nuclear magnetic resonance measurements under shear of sodium dodecyl sulfate/decanol/water nematics. <i>Journal of Rheology</i>. 2001;45(1):29-48. doi:<a href=\"https://doi.org/10.1122/1.1332387\">10.1122/1.1332387</a>","ieee":"T. Thiele, J.-F. Berret, S. Müller, and C. Schmidt, “Rheology and nuclear magnetic resonance measurements under shear of sodium dodecyl sulfate/decanol/water nematics,” <i>Journal of Rheology</i>, vol. 45, no. 1, pp. 29–48, 2001, doi: <a href=\"https://doi.org/10.1122/1.1332387\">10.1122/1.1332387</a>.","chicago":"Thiele, Thomas, J.-F. Berret, Stefan Müller, and Claudia Schmidt. “Rheology and Nuclear Magnetic Resonance Measurements under Shear of Sodium Dodecyl Sulfate/Decanol/Water Nematics.” <i>Journal of Rheology</i> 45, no. 1 (2001): 29–48. <a href=\"https://doi.org/10.1122/1.1332387\">https://doi.org/10.1122/1.1332387</a>.","apa":"Thiele, T., Berret, J.-F., Müller, S., &#38; Schmidt, C. (2001). Rheology and nuclear magnetic resonance measurements under shear of sodium dodecyl sulfate/decanol/water nematics. <i>Journal of Rheology</i>, <i>45</i>(1), 29–48. <a href=\"https://doi.org/10.1122/1.1332387\">https://doi.org/10.1122/1.1332387</a>","short":"T. Thiele, J.-F. Berret, S. Müller, C. Schmidt, Journal of Rheology 45 (2001) 29–48.","mla":"Thiele, Thomas, et al. “Rheology and Nuclear Magnetic Resonance Measurements under Shear of Sodium Dodecyl Sulfate/Decanol/Water Nematics.” <i>Journal of Rheology</i>, vol. 45, no. 1, Society of Rheology, 2001, pp. 29–48, doi:<a href=\"https://doi.org/10.1122/1.1332387\">10.1122/1.1332387</a>.","bibtex":"@article{Thiele_Berret_Müller_Schmidt_2001, title={Rheology and nuclear magnetic resonance measurements under shear of sodium dodecyl sulfate/decanol/water nematics}, volume={45}, DOI={<a href=\"https://doi.org/10.1122/1.1332387\">10.1122/1.1332387</a>}, number={1}, journal={Journal of Rheology}, publisher={Society of Rheology}, author={Thiele, Thomas and Berret, J.-F. and Müller, Stefan and Schmidt, Claudia}, year={2001}, pages={29–48} }"},"page":"29-48","intvolume":"        45","author":[{"last_name":"Thiele","full_name":"Thiele, Thomas","first_name":"Thomas"},{"last_name":"Berret","full_name":"Berret, J.-F.","first_name":"J.-F."},{"first_name":"Stefan","last_name":"Müller","full_name":"Müller, Stefan"},{"id":"466","full_name":"Schmidt, Claudia","orcid":"0000-0003-3179-9997","last_name":"Schmidt","first_name":"Claudia"}],"volume":45,"date_updated":"2023-01-07T11:18:40Z","doi":"10.1122/1.1332387","publication":"Journal of Rheology","language":[{"iso":"eng"}],"keyword":["Mechanical Engineering","Mechanics of Materials","Condensed Matter Physics","General Materials Science"],"issue":"1","quality_controlled":"1","year":"2001","date_created":"2023-01-06T13:17:10Z","publisher":"Society of Rheology","title":"Rheology and nuclear magnetic resonance measurements under shear of sodium dodecyl sulfate/decanol/water nematics"}]