@article{20588,
  abstract     = {{We have investigated the stacking of self-assembled cubic GaN quantum dots (QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers is varied to compare their optical properties. The growth is in situ controlled by reflection high energy electron diffraction to prove the SK QD growth. Atomic force and transmission electron microscopy show the existence of wetting layer and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence measurements show an increase of the intensity with increasing number of stacked QD layers. Furthermore, a systematic blue-shift of 120 meV is observed with increasing number of stacked QD layers. This blueshift derives from a decrease in the QD height, because the QD height has also been the main confining dimension in our QDs.}},
  author       = {{Blumenthal, Sarah and Rieger, Torsten and Meertens, Doris and Pawlis, Alexander and Reuter, Dirk and As, Donat Josef}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{cubic crystals, GaN, molecular beam epitaxy, quantum dots}},
  number       = {{3}},
  pages        = {{1600729}},
  title        = {{{Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}}},
  doi          = {{https://doi.org/10.1002/pssb.201600729}},
  volume       = {{255}},
  year         = {{2018}},
}

@article{4244,
  abstract     = {{In this work we study the resonant and coherent properties of single InP-based InAs quantum dots, which show an optical emission in the telecom C-band and L-band. High-resolution resonant photocurrent spectroscopy on p–i–n devices reveals narrow linewidths and fully resolved fine structure splittings. We observe Lorentzian line shapes, which allow for the extraction of dephasing times as a function of the applied bias voltage. Coherent ps laser excitation results in pronounced Rabi rotations with increasing pulse area. For π-pulse excitation, we obtain more than 93 % of the theoretically expected photocurrent amplitude. Our results also demonstrate that such state-of-the-art InP-based quantum dots for the telecom band exhibit promising key parameters comparable to well-established InAs/GaAs counterparts.}},
  author       = {{Gordon, S. and Yacob, M. and Reithmaier, J. P. and Benyoucef, M. and Zrenner, Artur}},
  issn         = {{0946-2171}},
  journal      = {{Applied Physics B}},
  keywords     = {{Bias Voltage, Optical Parametric Oscillator, Molecular Beam Epitaxy Growth, Internal Electric Field, Dephasing Time}},
  number       = {{2}},
  publisher    = {{Springer Nature}},
  title        = {{{Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom band at 1.5 µm}}},
  doi          = {{10.1007/s00340-015-6279-6}},
  volume       = {{122}},
  year         = {{2016}},
}

@article{4378,
  abstract     = {{Using a combined all-ultra-high-vacuum process employing lateral patterning with focused ion beams and molecular beam epitaxy, site-selective growth of single (In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally positioned quantum dots in the intrinsic region of a p-i-n junction so that the quantum dots can be driven electrically. In this contribution, we will present our results on the morphological properties of the ion-beam modified surface on which the quantum dot nucleation occurs together with a characterization of the electrical and optoelectronic properties. We will demonstrate that a single, individual quantum dot can directly be electrically addressed.}},
  author       = {{Mehta, Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Zrenner, Artur and Meier, Cedrik}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  keywords     = {{molecular beam epitaxy, quantum dot, site control, electroluminescence}},
  number       = {{4}},
  pages        = {{1182--1185}},
  publisher    = {{Wiley}},
  title        = {{{Electrically driven intentionally positioned single quantum dot}}},
  doi          = {{10.1002/pssc.201000828}},
  volume       = {{8}},
  year         = {{2011}},
}

@article{4551,
  abstract     = {{An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.}},
  author       = {{Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}},
  issn         = {{1386-9477}},
  journal      = {{Physica E: Low-dimensional Systems and Nanostructures}},
  keywords     = {{Molecular beam epitaxy, Focused ion beam, Self-assembled quantum dot, Electroluminescence}},
  number       = {{10}},
  pages        = {{2749--2752}},
  publisher    = {{Elsevier BV}},
  title        = {{{Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}}},
  doi          = {{10.1016/j.physe.2009.12.053}},
  volume       = {{42}},
  year         = {{2010}},
}