---
_id: '20588'
abstract:
- lang: eng
text: We have investigated the stacking of self-assembled cubic GaN quantum dots
(QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers
is varied to compare their optical properties. The growth is in situ controlled
by reflection high energy electron diffraction to prove the SK QD growth. Atomic
force and transmission electron microscopy show the existence of wetting layer
and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have
a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence
measurements show an increase of the intensity with increasing number of stacked
QD layers. Furthermore, a systematic blue-shift of 120 meV is observed with increasing
number of stacked QD layers. This blueshift derives from a decrease in the QD
height, because the QD height has also been the main confining dimension in our
QDs.
article_type: original
author:
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Torsten
full_name: Rieger, Torsten
last_name: Rieger
- first_name: Doris
full_name: Meertens, Doris
last_name: Meertens
- first_name: Alexander
full_name: Pawlis, Alexander
last_name: Pawlis
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled
Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi
(b). 2018;255(3):1600729. doi:https://doi.org/10.1002/pssb.201600729
apa: Blumenthal, S., Rieger, T., Meertens, D., Pawlis, A., Reuter, D., & As,
D. J. (2018). Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular
Beam Epitaxy. Physica Status Solidi (b), 255(3), 1600729. https://doi.org/10.1002/pssb.201600729
bibtex: '@article{Blumenthal_Rieger_Meertens_Pawlis_Reuter_As_2018, title={Stacked
Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255},
DOI={https://doi.org/10.1002/pssb.201600729},
number={3}, journal={physica status solidi (b)}, author={Blumenthal, Sarah and
Rieger, Torsten and Meertens, Doris and Pawlis, Alexander and Reuter, Dirk and
As, Donat Josef}, year={2018}, pages={1600729} }'
chicago: 'Blumenthal, Sarah, Torsten Rieger, Doris Meertens, Alexander Pawlis, Dirk
Reuter, and Donat Josef As. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown
by Molecular Beam Epitaxy.” Physica Status Solidi (b) 255, no. 3 (2018):
1600729. https://doi.org/10.1002/pssb.201600729.'
ieee: 'S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As,
“Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,”
physica status solidi (b), vol. 255, no. 3, p. 1600729, 2018, doi: https://doi.org/10.1002/pssb.201600729.'
mla: Blumenthal, Sarah, et al. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown
by Molecular Beam Epitaxy.” Physica Status Solidi (b), vol. 255, no. 3,
2018, p. 1600729, doi:https://doi.org/10.1002/pssb.201600729.
short: S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica
Status Solidi (b) 255 (2018) 1600729.
date_created: 2020-12-02T09:38:00Z
date_updated: 2023-10-09T09:19:40Z
department:
- _id: '230'
- _id: '429'
doi: https://doi.org/10.1002/pssb.201600729
intvolume: ' 255'
issue: '3'
keyword:
- cubic crystals
- GaN
- molecular beam epitaxy
- quantum dots
language:
- iso: eng
page: '1600729'
project:
- _id: '53'
grant_number: '231447078'
name: TRR 142
- _id: '54'
name: TRR 142 - Project Area A
- _id: '63'
grant_number: '231447078'
name: TRR 142 - Subproject A6
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
status: public
title: Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
type: journal_article
user_id: '14931'
volume: 255
year: '2018'
...
---
_id: '4244'
abstract:
- lang: eng
text: In this work we study the resonant and coherent properties of single InP-based
InAs quantum dots, which show an optical emission in the telecom C-band and L-band.
High-resolution resonant photocurrent spectroscopy on p–i–n devices reveals narrow
linewidths and fully resolved fine structure splittings. We observe Lorentzian
line shapes, which allow for the extraction of dephasing times as a function of
the applied bias voltage. Coherent ps laser excitation results in pronounced Rabi
rotations with increasing pulse area. For π-pulse excitation, we obtain more than
93 % of the theoretically expected photocurrent amplitude. Our results also demonstrate
that such state-of-the-art InP-based quantum dots for the telecom band exhibit
promising key parameters comparable to well-established InAs/GaAs counterparts.
article_type: original
author:
- first_name: S.
full_name: Gordon, S.
last_name: Gordon
- first_name: M.
full_name: Yacob, M.
last_name: Yacob
- first_name: J. P.
full_name: Reithmaier, J. P.
last_name: Reithmaier
- first_name: M.
full_name: Benyoucef, M.
last_name: Benyoucef
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Gordon S, Yacob M, Reithmaier JP, Benyoucef M, Zrenner A. Coherent photocurrent
spectroscopy of single InP-based quantum dots in the telecom band at 1.5 µm. Applied
Physics B. 2016;122(2). doi:10.1007/s00340-015-6279-6
apa: Gordon, S., Yacob, M., Reithmaier, J. P., Benyoucef, M., & Zrenner, A.
(2016). Coherent photocurrent spectroscopy of single InP-based quantum dots in
the telecom band at 1.5 µm. Applied Physics B, 122(2). https://doi.org/10.1007/s00340-015-6279-6
bibtex: '@article{Gordon_Yacob_Reithmaier_Benyoucef_Zrenner_2016, title={Coherent
photocurrent spectroscopy of single InP-based quantum dots in the telecom band
at 1.5 µm}, volume={122}, DOI={10.1007/s00340-015-6279-6},
number={2}, journal={Applied Physics B}, publisher={Springer Nature}, author={Gordon,
S. and Yacob, M. and Reithmaier, J. P. and Benyoucef, M. and Zrenner, Artur},
year={2016} }'
chicago: Gordon, S., M. Yacob, J. P. Reithmaier, M. Benyoucef, and Artur Zrenner.
“Coherent Photocurrent Spectroscopy of Single InP-Based Quantum Dots in the Telecom
Band at 1.5 Μm.” Applied Physics B 122, no. 2 (2016). https://doi.org/10.1007/s00340-015-6279-6.
ieee: S. Gordon, M. Yacob, J. P. Reithmaier, M. Benyoucef, and A. Zrenner, “Coherent
photocurrent spectroscopy of single InP-based quantum dots in the telecom band
at 1.5 µm,” Applied Physics B, vol. 122, no. 2, 2016.
mla: Gordon, S., et al. “Coherent Photocurrent Spectroscopy of Single InP-Based
Quantum Dots in the Telecom Band at 1.5 Μm.” Applied Physics B, vol. 122,
no. 2, Springer Nature, 2016, doi:10.1007/s00340-015-6279-6.
short: S. Gordon, M. Yacob, J.P. Reithmaier, M. Benyoucef, A. Zrenner, Applied Physics
B 122 (2016).
date_created: 2018-08-29T08:30:59Z
date_updated: 2022-01-06T07:00:41Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1007/s00340-015-6279-6
intvolume: ' 122'
issue: '2'
keyword:
- Bias Voltage
- Optical Parametric Oscillator
- Molecular Beam Epitaxy Growth
- Internal Electric Field
- Dephasing Time
language:
- iso: eng
publication: Applied Physics B
publication_identifier:
issn:
- 0946-2171
- 1432-0649
publication_status: published
publisher: Springer Nature
status: public
title: Coherent photocurrent spectroscopy of single InP-based quantum dots in the
telecom band at 1.5 µm
type: journal_article
user_id: '49428'
volume: 122
year: '2016'
...
---
_id: '4378'
abstract:
- lang: eng
text: Using a combined all-ultra-high-vacuum process employing lateral patterning
with focused ion beams and molecular beam epitaxy, site-selective growth of single
(In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally
positioned quantum dots in the intrinsic region of a p-i-n junction so that the
quantum dots can be driven electrically. In this contribution, we will present
our results on the morphological properties of the ion-beam modified surface on
which the quantum dot nucleation occurs together with a characterization of the
electrical and optoelectronic properties. We will demonstrate that a single, individual
quantum dot can directly be electrically addressed.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. Electrically driven intentionally positioned single quantum dot. physica
status solidi (c). 2011;8(4):1182-1185. doi:10.1002/pssc.201000828
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2011). Electrically driven intentionally positioned single
quantum dot. Physica Status Solidi (C), 8(4), 1182–1185. https://doi.org/10.1002/pssc.201000828
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2011,
title={Electrically driven intentionally positioned single quantum dot}, volume={8},
DOI={10.1002/pssc.201000828},
number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mehta,
Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos,
Steffen and Zrenner, Artur and Meier, Cedrik}, year={2011}, pages={1182–1185}
}'
chicago: 'Mehta, Minisha, Dirk Reuter, Andreas D. Wieck, Steffen Michaelis de Vasconcellos,
Artur Zrenner, and Cedrik Meier. “Electrically Driven Intentionally Positioned
Single Quantum Dot.” Physica Status Solidi (C) 8, no. 4 (2011): 1182–85.
https://doi.org/10.1002/pssc.201000828.'
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “Electrically driven intentionally positioned single quantum dot,”
physica status solidi (c), vol. 8, no. 4, pp. 1182–1185, 2011.
mla: Mehta, Minisha, et al. “Electrically Driven Intentionally Positioned Single
Quantum Dot.” Physica Status Solidi (C), vol. 8, no. 4, Wiley, 2011, pp.
1182–85, doi:10.1002/pssc.201000828.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Physica Status Solidi (C) 8 (2011) 1182–1185.
date_created: 2018-09-11T14:15:28Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1002/pssc.201000828
intvolume: ' 8'
issue: '4'
keyword:
- molecular beam epitaxy
- quantum dot
- site control
- electroluminescence
language:
- iso: eng
page: 1182-1185
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Electrically driven intentionally positioned single quantum dot
type: journal_article
user_id: '20798'
volume: 8
year: '2011'
...
---
_id: '4551'
abstract:
- lang: eng
text: An intentional positioning of optically active quantum dots using site-selective
growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB)
implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated.
A square array of periodic holes on GaAs substrate was fabricated with FIB of
30 keV ions followed by an in situ annealing step. Subsequently, the patterned
holes were overgrown with an optimized amount of InAs in order to achieve site-selective
growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity
of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter,
carrier injection and subsequent radiative recombination from the positioned InAs/GaAs
self-assembled QDs was investigated by embedding the QDs in the intrinsic part
of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77
K show interband transitions up to the fifth excited state from the QDs.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Alexander
full_name: Melnikov, Alexander
last_name: Melnikov
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Tim
full_name: Baumgarten, Tim
last_name: Baumgarten
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: 'Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-dimensional Systems and Nanostructures. 2010;42(10):2749-2752. doi:10.1016/j.physe.2009.12.053'
apa: 'Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos,
S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled
InAs quantum dots in an electroluminescent p–i–n junction diode. Physica E:
Low-Dimensional Systems and Nanostructures, 42(10), 2749–2752. https://doi.org/10.1016/j.physe.2009.12.053'
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010,
title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode}, volume={42}, DOI={10.1016/j.physe.2009.12.053},
number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures},
publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov,
Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten,
Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }'
chicago: 'Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen
Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally
Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction
Diode.” Physica E: Low-Dimensional Systems and Nanostructures 42, no. 10
(2010): 2749–52. https://doi.org/10.1016/j.physe.2009.12.053.'
ieee: 'M. Mehta et al., “Intentionally positioned self-assembled InAs quantum
dots in an electroluminescent p–i–n junction diode,” Physica E: Low-dimensional
Systems and Nanostructures, vol. 42, no. 10, pp. 2749–2752, 2010.'
mla: 'Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum
Dots in an Electroluminescent p–i–n Junction Diode.” Physica E: Low-Dimensional
Systems and Nanostructures, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52,
doi:10.1016/j.physe.2009.12.053.'
short: 'M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos,
T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures
42 (2010) 2749–2752.'
date_created: 2018-09-20T12:42:40Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1016/j.physe.2009.12.053
intvolume: ' 42'
issue: '10'
keyword:
- Molecular beam epitaxy
- Focused ion beam
- Self-assembled quantum dot
- Electroluminescence
language:
- iso: eng
page: 2749-2752
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
publisher: Elsevier BV
status: public
title: Intentionally positioned self-assembled InAs quantum dots in an electroluminescent
p–i–n junction diode
type: journal_article
user_id: '20798'
volume: 42
year: '2010'
...