--- _id: '42040' author: - first_name: Bernd full_name: Neumann, Bernd last_name: Neumann - first_name: Klaus full_name: Huber, Klaus id: '237' last_name: Huber - first_name: Peter full_name: Pollmann, Peter last_name: Pollmann citation: ama: Neumann B, Huber K, Pollmann P. A comparative experimental study of the aggregation of Acid Red 266 in aqueous solution by use of 19F-NMR, UV/Vis spectroscopy and static light scattering. Physical Chemistry Chemical Physics. 2002;2(16):3687-3695. doi:10.1039/b004172f apa: Neumann, B., Huber, K., & Pollmann, P. (2002). A comparative experimental study of the aggregation of Acid Red 266 in aqueous solution by use of 19F-NMR, UV/Vis spectroscopy and static light scattering. Physical Chemistry Chemical Physics, 2(16), 3687–3695. https://doi.org/10.1039/b004172f bibtex: '@article{Neumann_Huber_Pollmann_2002, title={A comparative experimental study of the aggregation of Acid Red 266 in aqueous solution by use of 19F-NMR, UV/Vis spectroscopy and static light scattering}, volume={2}, DOI={10.1039/b004172f}, number={16}, journal={Physical Chemistry Chemical Physics}, publisher={Royal Society of Chemistry (RSC)}, author={Neumann, Bernd and Huber, Klaus and Pollmann, Peter}, year={2002}, pages={3687–3695} }' chicago: 'Neumann, Bernd, Klaus Huber, and Peter Pollmann. “A Comparative Experimental Study of the Aggregation of Acid Red 266 in Aqueous Solution by Use of 19F-NMR, UV/Vis Spectroscopy and Static Light Scattering.” Physical Chemistry Chemical Physics 2, no. 16 (2002): 3687–95. https://doi.org/10.1039/b004172f.' ieee: 'B. Neumann, K. Huber, and P. Pollmann, “A comparative experimental study of the aggregation of Acid Red 266 in aqueous solution by use of 19F-NMR, UV/Vis spectroscopy and static light scattering,” Physical Chemistry Chemical Physics, vol. 2, no. 16, pp. 3687–3695, 2002, doi: 10.1039/b004172f.' mla: Neumann, Bernd, et al. “A Comparative Experimental Study of the Aggregation of Acid Red 266 in Aqueous Solution by Use of 19F-NMR, UV/Vis Spectroscopy and Static Light Scattering.” Physical Chemistry Chemical Physics, vol. 2, no. 16, Royal Society of Chemistry (RSC), 2002, pp. 3687–95, doi:10.1039/b004172f. short: B. Neumann, K. Huber, P. Pollmann, Physical Chemistry Chemical Physics 2 (2002) 3687–3695. date_created: 2023-02-13T09:10:00Z date_updated: 2023-02-13T09:10:23Z department: - _id: '314' doi: 10.1039/b004172f intvolume: ' 2' issue: '16' keyword: - Physical and Theoretical Chemistry - General Physics and Astronomy language: - iso: eng page: 3687-3695 publication: Physical Chemistry Chemical Physics publication_identifier: issn: - 1463-9076 - 1463-9084 publication_status: published publisher: Royal Society of Chemistry (RSC) status: public title: A comparative experimental study of the aggregation of Acid Red 266 in aqueous solution by use of 19F-NMR, UV/Vis spectroscopy and static light scattering type: journal_article user_id: '237' volume: 2 year: '2002' ... --- _id: '42052' author: - first_name: Armin full_name: Katzenstein, Armin last_name: Katzenstein - first_name: Klaus full_name: Huber, Klaus id: '237' last_name: Huber citation: ama: Katzenstein A, Huber K. Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates. Langmuir. 2002;18(18):7049-7056. doi:10.1021/la020143u apa: Katzenstein, A., & Huber, K. (2002). Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates. Langmuir, 18(18), 7049–7056. https://doi.org/10.1021/la020143u bibtex: '@article{Katzenstein_Huber_2002, title={Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates}, volume={18}, DOI={10.1021/la020143u}, number={18}, journal={Langmuir}, publisher={American Chemical Society (ACS)}, author={Katzenstein, Armin and Huber, Klaus}, year={2002}, pages={7049–7056} }' chicago: 'Katzenstein, Armin, and Klaus Huber. “Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates.” Langmuir 18, no. 18 (2002): 7049–56. https://doi.org/10.1021/la020143u.' ieee: 'A. Katzenstein and K. Huber, “Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates,” Langmuir, vol. 18, no. 18, pp. 7049–7056, 2002, doi: 10.1021/la020143u.' mla: Katzenstein, Armin, and Klaus Huber. “Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates.” Langmuir, vol. 18, no. 18, American Chemical Society (ACS), 2002, pp. 7049–56, doi:10.1021/la020143u. short: A. Katzenstein, K. Huber, Langmuir 18 (2002) 7049–7056. date_created: 2023-02-13T13:04:11Z date_updated: 2023-02-13T13:04:43Z department: - _id: '314' doi: 10.1021/la020143u intvolume: ' 18' issue: '18' keyword: - Electrochemistry - Spectroscopy - Surfaces and Interfaces - Condensed Matter Physics - General Materials Science language: - iso: eng page: 7049-7056 publication: Langmuir publication_identifier: issn: - 0743-7463 - 1520-5827 publication_status: published publisher: American Chemical Society (ACS) status: public title: Model of Polydisperse Wormlike Stars and Its Application to Dyestuff Aggregates type: journal_article user_id: '237' volume: 18 year: '2002' ... --- _id: '39778' author: - first_name: Guido full_name: Mertens, Guido last_name: Mertens - first_name: Thorsten full_name: Röder, Thorsten last_name: Röder - first_name: Ralf full_name: Schweins, Ralf last_name: Schweins - first_name: Klaus full_name: Huber, Klaus id: '237' last_name: Huber - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Mertens G, Röder T, Schweins R, Huber K, Kitzerow H-S. Shift of the photonic band gap in two photonic crystal/liquid crystal composites. Applied Physics Letters. 2002;80(11):1885-1887. doi:10.1063/1.1461885 apa: Mertens, G., Röder, T., Schweins, R., Huber, K., & Kitzerow, H.-S. (2002). Shift of the photonic band gap in two photonic crystal/liquid crystal composites. Applied Physics Letters, 80(11), 1885–1887. https://doi.org/10.1063/1.1461885 bibtex: '@article{Mertens_Röder_Schweins_Huber_Kitzerow_2002, title={Shift of the photonic band gap in two photonic crystal/liquid crystal composites}, volume={80}, DOI={10.1063/1.1461885}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mertens, Guido and Röder, Thorsten and Schweins, Ralf and Huber, Klaus and Kitzerow, Heinz-Siegfried}, year={2002}, pages={1885–1887} }' chicago: 'Mertens, Guido, Thorsten Röder, Ralf Schweins, Klaus Huber, and Heinz-Siegfried Kitzerow. “Shift of the Photonic Band Gap in Two Photonic Crystal/Liquid Crystal Composites.” Applied Physics Letters 80, no. 11 (2002): 1885–87. https://doi.org/10.1063/1.1461885.' ieee: 'G. Mertens, T. Röder, R. Schweins, K. Huber, and H.-S. Kitzerow, “Shift of the photonic band gap in two photonic crystal/liquid crystal composites,” Applied Physics Letters, vol. 80, no. 11, pp. 1885–1887, 2002, doi: 10.1063/1.1461885.' mla: Mertens, Guido, et al. “Shift of the Photonic Band Gap in Two Photonic Crystal/Liquid Crystal Composites.” Applied Physics Letters, vol. 80, no. 11, AIP Publishing, 2002, pp. 1885–87, doi:10.1063/1.1461885. short: G. Mertens, T. Röder, R. Schweins, K. Huber, H.-S. Kitzerow, Applied Physics Letters 80 (2002) 1885–1887. date_created: 2023-01-24T19:21:48Z date_updated: 2023-02-15T09:12:16Z department: - _id: '313' - _id: '638' doi: 10.1063/1.1461885 intvolume: ' 80' issue: '11' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng page: 1885-1887 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Shift of the photonic band gap in two photonic crystal/liquid crystal composites type: journal_article user_id: '254' volume: 80 year: '2002' ... --- _id: '39912' author: - first_name: I. full_name: Schönstein, I. last_name: Schönstein - first_name: J. full_name: Müller, J. last_name: Müller - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j apa: Schönstein, I., Müller, J., Hilleringmann, U., & Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering, 21(1–4), 363–366. https://doi.org/10.1016/0167-9317(93)90092-j bibtex: '@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={10.1016/0167-9317(93)90092-j}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }' chicago: 'Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” Microelectronic Engineering 21, no. 1–4 (2002): 363–66. https://doi.org/10.1016/0167-9317(93)90092-j.' ieee: 'I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” Microelectronic Engineering, vol. 21, no. 1–4, pp. 363–366, 2002, doi: 10.1016/0167-9317(93)90092-j.' mla: Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” Microelectronic Engineering, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:10.1016/0167-9317(93)90092-j. short: I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366. date_created: 2023-01-25T09:26:21Z date_updated: 2023-03-21T09:50:03Z department: - _id: '59' doi: 10.1016/0167-9317(93)90092-j intvolume: ' 21' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 363-366 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Characterization of submicron NMOS devices due to visible light emission type: journal_article user_id: '20179' volume: 21 year: '2002' ... --- _id: '39914' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q apa: Hilleringmann, U., & Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214. https://doi.org/10.1016/0167-9317(92)90425-q bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={10.1016/0167-9317(92)90425-q}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }' chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic Engineering 19, no. 1–4 (2002): 211–14. https://doi.org/10.1016/0167-9317(92)90425-q.' ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi: 10.1016/0167-9317(92)90425-q.' mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:10.1016/0167-9317(92)90425-q. short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214. date_created: 2023-01-25T09:27:23Z date_updated: 2023-03-21T09:49:25Z department: - _id: '59' doi: 10.1016/0167-9317(92)90425-q intvolume: ' 19' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 211-214 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon type: journal_article user_id: '20179' volume: 19 year: '2002' ... --- _id: '39899' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4 apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering, 30(1–4), 431–434. https://doi.org/10.1016/0167-9317(95)00280-4 bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={10.1016/0167-9317(95)00280-4}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }' chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” Microelectronic Engineering 30, no. 1–4 (2002): 431–34. https://doi.org/10.1016/0167-9317(95)00280-4.' ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” Microelectronic Engineering, vol. 30, no. 1–4, pp. 431–434, 2002, doi: 10.1016/0167-9317(95)00280-4.' mla: Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” Microelectronic Engineering, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:10.1016/0167-9317(95)00280-4. short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434. date_created: 2023-01-25T09:20:20Z date_updated: 2023-03-21T09:53:55Z department: - _id: '59' doi: 10.1016/0167-9317(95)00280-4 intvolume: ' 30' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 431-434 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique type: journal_article user_id: '20179' volume: 30 year: '2002' ... --- _id: '39882' author: - first_name: V. full_name: Mankowski, V. last_name: Mankowski - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Schumacher, K. last_name: Schumacher citation: ama: Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1 apa: Mankowski, V., Hilleringmann, U., & Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering, 53(1–4), 525–528. https://doi.org/10.1016/s0167-9317(00)00370-1 bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}, volume={53}, DOI={10.1016/s0167-9317(00)00370-1}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={525–528} }' chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” Microelectronic Engineering 53, no. 1–4 (2002): 525–28. https://doi.org/10.1016/s0167-9317(00)00370-1.' ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 525–528, 2002, doi: 10.1016/s0167-9317(00)00370-1.' mla: Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:10.1016/s0167-9317(00)00370-1. short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528. date_created: 2023-01-25T09:10:13Z date_updated: 2023-03-21T10:00:06Z department: - _id: '59' doi: 10.1016/s0167-9317(00)00370-1 intvolume: ' 53' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 525-528 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV type: journal_article user_id: '20179' volume: 53 year: '2002' ... --- _id: '39879' author: - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9 apa: Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering, 53(1–4), 213–216. https://doi.org/10.1016/s0167-9317(00)00299-9 bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={10.1016/s0167-9317(00)00299-9}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }' chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” Microelectronic Engineering 53, no. 1–4 (2002): 213–16. https://doi.org/10.1016/s0167-9317(00)00299-9.' ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 213–216, 2002, doi: 10.1016/s0167-9317(00)00299-9.' mla: Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:10.1016/s0167-9317(00)00299-9. short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216. date_created: 2023-01-25T09:08:36Z date_updated: 2023-03-21T10:02:46Z department: - _id: '59' doi: 10.1016/s0167-9317(00)00299-9 intvolume: ' 53' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 213-216 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique type: journal_article user_id: '20179' volume: 53 year: '2002' ... --- _id: '39919' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Knospe, K. last_name: Knospe - first_name: C. full_name: Heite, C. last_name: Heite - first_name: K. full_name: Schumacher, K. last_name: Schumacher - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2 apa: Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., & Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering, 15(1–4), 289–292. https://doi.org/10.1016/0167-9317(91)90231-2 bibtex: '@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}, volume={15}, DOI={10.1016/0167-9317(91)90231-2}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}, year={2002}, pages={289–292} }' chicago: 'Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” Microelectronic Engineering 15, no. 1–4 (2002): 289–92. https://doi.org/10.1016/0167-9317(91)90231-2.' ieee: 'U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,” Microelectronic Engineering, vol. 15, no. 1–4, pp. 289–292, 2002, doi: 10.1016/0167-9317(91)90231-2.' mla: Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” Microelectronic Engineering, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:10.1016/0167-9317(91)90231-2. short: U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292. date_created: 2023-01-25T09:29:32Z date_updated: 2023-03-22T10:29:08Z department: - _id: '59' doi: 10.1016/0167-9317(91)90231-2 intvolume: ' 15' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 289-292 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits type: journal_article user_id: '20179' volume: 15 year: '2002' ... --- _id: '39920' author: - first_name: A. full_name: Soennecken, A. last_name: Soennecken - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s apa: Soennecken, A., Hilleringmann, U., & Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering, 15(1–4), 633–636. https://doi.org/10.1016/0167-9317(91)90299-s bibtex: '@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={10.1016/0167-9317(91)90299-s}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }' chicago: 'Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” Microelectronic Engineering 15, no. 1–4 (2002): 633–36. https://doi.org/10.1016/0167-9317(91)90299-s.' ieee: 'A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” Microelectronic Engineering, vol. 15, no. 1–4, pp. 633–636, 2002, doi: 10.1016/0167-9317(91)90299-s.' mla: Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” Microelectronic Engineering, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:10.1016/0167-9317(91)90299-s. short: A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636. date_created: 2023-01-25T09:29:53Z date_updated: 2023-03-21T09:47:17Z department: - _id: '59' doi: 10.1016/0167-9317(91)90299-s intvolume: ' 15' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 633-636 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica type: journal_article user_id: '20179' volume: 15 year: '2002' ... --- _id: '39915' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q apa: Hilleringmann, U., & Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214. https://doi.org/10.1016/0167-9317(92)90425-q bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={10.1016/0167-9317(92)90425-q}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }' chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic Engineering 19, no. 1–4 (2002): 211–14. https://doi.org/10.1016/0167-9317(92)90425-q.' ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi: 10.1016/0167-9317(92)90425-q.' mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” Microelectronic Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:10.1016/0167-9317(92)90425-q. short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214. date_created: 2023-01-25T09:27:51Z date_updated: 2023-03-21T09:49:09Z department: - _id: '59' doi: 10.1016/0167-9317(92)90425-q intvolume: ' 19' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 211-214 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon type: journal_article user_id: '20179' volume: 19 year: '2002' ... --- _id: '39916' author: - first_name: S. full_name: Adams, S. last_name: Adams - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Goser, K. last_name: Goser citation: ama: Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v apa: Adams, S., Hilleringmann, U., & Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering, 19(1–4), 191–194. https://doi.org/10.1016/0167-9317(92)90420-v bibtex: '@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={10.1016/0167-9317(92)90420-v}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }' chicago: 'Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” Microelectronic Engineering 19, no. 1–4 (2002): 191–94. https://doi.org/10.1016/0167-9317(92)90420-v.' ieee: 'S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” Microelectronic Engineering, vol. 19, no. 1–4, pp. 191–194, 2002, doi: 10.1016/0167-9317(92)90420-v.' mla: Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” Microelectronic Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:10.1016/0167-9317(92)90420-v. short: S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194. date_created: 2023-01-25T09:28:16Z date_updated: 2023-03-21T09:48:55Z department: - _id: '59' doi: 10.1016/0167-9317(92)90420-v intvolume: ' 19' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 191-194 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: CMOS compatible micromachining by dry silicon-etching techniques type: journal_article user_id: '20179' volume: 19 year: '2002' ... --- _id: '39889' author: - first_name: V. full_name: Mankowski, V. last_name: Mankowski - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: K. full_name: Schumacher, K. last_name: Schumacher citation: ama: Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering. 2002;46(1-4):413-417. doi:10.1016/s0167-9317(99)00122-7 apa: Mankowski, V., Hilleringmann, U., & Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering, 46(1–4), 413–417. https://doi.org/10.1016/s0167-9317(99)00122-7 bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current cascaded light triggered switch on one silicon chip}, volume={46}, DOI={10.1016/s0167-9317(99)00122-7}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={413–417} }' chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” Microelectronic Engineering 46, no. 1–4 (2002): 413–17. https://doi.org/10.1016/s0167-9317(99)00122-7.' ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” Microelectronic Engineering, vol. 46, no. 1–4, pp. 413–417, 2002, doi: 10.1016/s0167-9317(99)00122-7.' mla: Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” Microelectronic Engineering, vol. 46, no. 1–4, Elsevier BV, 2002, pp. 413–17, doi:10.1016/s0167-9317(99)00122-7. short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417. date_created: 2023-01-25T09:13:17Z date_updated: 2023-03-21T09:58:35Z department: - _id: '59' doi: 10.1016/s0167-9317(99)00122-7 intvolume: ' 46' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 413-417 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: 12 kV low current cascaded light triggered switch on one silicon chip type: journal_article user_id: '20179' volume: 46 year: '2002' ... --- _id: '39886' author: - first_name: G full_name: Wirth, G last_name: Wirth - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: J.T full_name: Horstmann, J.T last_name: Horstmann - first_name: K full_name: Goser, K last_name: Goser citation: ama: Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. Solid-State Electronics. 2002;43(7):1245-1250. doi:10.1016/s0038-1101(99)00060-x apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., & Goser, K. (2002). Mesoscopic transport phenomena in ultrashort channel MOSFETs. Solid-State Electronics, 43(7), 1245–1250. https://doi.org/10.1016/s0038-1101(99)00060-x bibtex: '@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={10.1016/s0038-1101(99)00060-x}, number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250} }' chicago: 'Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” Solid-State Electronics 43, no. 7 (2002): 1245–50. https://doi.org/10.1016/s0038-1101(99)00060-x.' ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,” Solid-State Electronics, vol. 43, no. 7, pp. 1245–1250, 2002, doi: 10.1016/s0038-1101(99)00060-x.' mla: Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” Solid-State Electronics, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50, doi:10.1016/s0038-1101(99)00060-x. short: G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250. date_created: 2023-01-25T09:11:50Z date_updated: 2023-03-21T09:59:22Z department: - _id: '59' doi: 10.1016/s0038-1101(99)00060-x intvolume: ' 43' issue: '7' keyword: - Materials Chemistry - Electrical and Electronic Engineering - Condensed Matter Physics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 1245-1250 publication: Solid-State Electronics publication_identifier: issn: - 0038-1101 publication_status: published publisher: Elsevier BV status: public title: Mesoscopic transport phenomena in ultrashort channel MOSFETs type: journal_article user_id: '20179' volume: 43 year: '2002' ... --- _id: '39877' author: - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: T. full_name: Vieregge, T. last_name: Vieregge - first_name: J.T. full_name: Horstmann, J.T. last_name: Horstmann citation: ama: Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering. 2002;53(1-4):569-572. doi:10.1016/s0167-9317(00)00380-4 apa: Hilleringmann, U., Vieregge, T., & Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering, 53(1–4), 569–572. https://doi.org/10.1016/s0167-9317(00)00380-4 bibtex: '@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={10.1016/s0167-9317(00)00380-4}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }' chicago: 'Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” Microelectronic Engineering 53, no. 1–4 (2002): 569–72. https://doi.org/10.1016/s0167-9317(00)00380-4.' ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 569–572, 2002, doi: 10.1016/s0167-9317(00)00380-4.' mla: Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:10.1016/s0167-9317(00)00380-4. short: U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572. date_created: 2023-01-25T09:08:13Z date_updated: 2023-03-21T10:03:00Z department: - _id: '59' doi: 10.1016/s0167-9317(00)00380-4 intvolume: ' 53' issue: 1-4 keyword: - Electrical and Electronic Engineering - Surfaces - Coatings and Films - Condensed Matter Physics - Atomic and Molecular Physics - and Optics - Electronic - Optical and Magnetic Materials language: - iso: eng page: 569-572 publication: Microelectronic Engineering publication_identifier: issn: - 0167-9317 publication_status: published publisher: Elsevier BV status: public title: A structure definition technique for 25 nm lines of silicon and related materials type: journal_article user_id: '20179' volume: 53 year: '2002' ... --- _id: '45307' author: - first_name: Rolf full_name: Mahnken, Rolf id: '335' last_name: Mahnken citation: ama: Mahnken R. Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity. Computer Methods in Applied Mechanics and Engineering. 2002;190(39):5057-5080. doi:10.1016/s0045-7825(00)00364-9 apa: Mahnken, R. (2002). Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity. Computer Methods in Applied Mechanics and Engineering, 190(39), 5057–5080. https://doi.org/10.1016/s0045-7825(00)00364-9 bibtex: '@article{Mahnken_2002, title={Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity}, volume={190}, DOI={10.1016/s0045-7825(00)00364-9}, number={39}, journal={Computer Methods in Applied Mechanics and Engineering}, publisher={Elsevier BV}, author={Mahnken, Rolf}, year={2002}, pages={5057–5080} }' chicago: 'Mahnken, Rolf. “Strength Difference in Compression and Tension and Pressure Dependence of Yielding in Elasto-Plasticity.” Computer Methods in Applied Mechanics and Engineering 190, no. 39 (2002): 5057–80. https://doi.org/10.1016/s0045-7825(00)00364-9.' ieee: 'R. Mahnken, “Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity,” Computer Methods in Applied Mechanics and Engineering, vol. 190, no. 39, pp. 5057–5080, 2002, doi: 10.1016/s0045-7825(00)00364-9.' mla: Mahnken, Rolf. “Strength Difference in Compression and Tension and Pressure Dependence of Yielding in Elasto-Plasticity.” Computer Methods in Applied Mechanics and Engineering, vol. 190, no. 39, Elsevier BV, 2002, pp. 5057–80, doi:10.1016/s0045-7825(00)00364-9. short: R. Mahnken, Computer Methods in Applied Mechanics and Engineering 190 (2002) 5057–5080. date_created: 2023-05-26T12:21:04Z date_updated: 2023-05-26T12:22:12Z department: - _id: '9' - _id: '154' doi: 10.1016/s0045-7825(00)00364-9 intvolume: ' 190' issue: '39' keyword: - Computer Science Applications - General Physics and Astronomy - Mechanical Engineering - Mechanics of Materials - Computational Mechanics language: - iso: eng page: 5057-5080 publication: Computer Methods in Applied Mechanics and Engineering publication_identifier: issn: - 0045-7825 publication_status: published publisher: Elsevier BV quality_controlled: '1' status: public title: Strength difference in compression and tension and pressure dependence of yielding in elasto-plasticity type: journal_article user_id: '335' volume: 190 year: '2002' ... --- _id: '45412' author: - first_name: Rolf full_name: Mahnken, Rolf id: '335' last_name: Mahnken - first_name: M. full_name: Kohlmeier, M. last_name: Kohlmeier citation: ama: Mahnken R, Kohlmeier M. Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation. Computer Methods in Applied Mechanics and Engineering. 2002;190(32-33):4259-4278. doi:10.1016/s0045-7825(00)00317-0 apa: Mahnken, R., & Kohlmeier, M. (2002). Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation. Computer Methods in Applied Mechanics and Engineering, 190(32–33), 4259–4278. https://doi.org/10.1016/s0045-7825(00)00317-0 bibtex: '@article{Mahnken_Kohlmeier_2002, title={Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation}, volume={190}, DOI={10.1016/s0045-7825(00)00317-0}, number={32–33}, journal={Computer Methods in Applied Mechanics and Engineering}, publisher={Elsevier BV}, author={Mahnken, Rolf and Kohlmeier, M.}, year={2002}, pages={4259–4278} }' chicago: 'Mahnken, Rolf, and M. Kohlmeier. “Finite Element Simulation for Rock Salt with Dilatancy Boundary Coupled to Fluid Permeation.” Computer Methods in Applied Mechanics and Engineering 190, no. 32–33 (2002): 4259–78. https://doi.org/10.1016/s0045-7825(00)00317-0.' ieee: 'R. Mahnken and M. Kohlmeier, “Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation,” Computer Methods in Applied Mechanics and Engineering, vol. 190, no. 32–33, pp. 4259–4278, 2002, doi: 10.1016/s0045-7825(00)00317-0.' mla: Mahnken, Rolf, and M. Kohlmeier. “Finite Element Simulation for Rock Salt with Dilatancy Boundary Coupled to Fluid Permeation.” Computer Methods in Applied Mechanics and Engineering, vol. 190, no. 32–33, Elsevier BV, 2002, pp. 4259–78, doi:10.1016/s0045-7825(00)00317-0. short: R. Mahnken, M. Kohlmeier, Computer Methods in Applied Mechanics and Engineering 190 (2002) 4259–4278. date_created: 2023-05-31T11:52:51Z date_updated: 2023-05-31T11:53:38Z department: - _id: '9' - _id: '154' doi: 10.1016/s0045-7825(00)00317-0 intvolume: ' 190' issue: 32-33 keyword: - Computer Science Applications - General Physics and Astronomy - Mechanical Engineering - Mechanics of Materials - Computational Mechanics language: - iso: eng page: 4259-4278 publication: Computer Methods in Applied Mechanics and Engineering publication_identifier: issn: - 0045-7825 publication_status: published publisher: Elsevier BV quality_controlled: '1' status: public title: Finite element simulation for rock salt with dilatancy boundary coupled to fluid permeation type: journal_article user_id: '335' volume: 190 year: '2002' ... --- _id: '45424' author: - first_name: Rolf full_name: Mahnken, Rolf id: '335' last_name: Mahnken - first_name: Ellen full_name: Kuhl, Ellen last_name: Kuhl citation: ama: Mahnken R, Kuhl E. Parameter identification of gradient enhanced damage models with the finite element method. European Journal of Mechanics - A/Solids. 2002;18(5):819-835. doi:10.1016/s0997-7538(99)00127-8 apa: Mahnken, R., & Kuhl, E. (2002). Parameter identification of gradient enhanced damage models with the finite element method. European Journal of Mechanics - A/Solids, 18(5), 819–835. https://doi.org/10.1016/s0997-7538(99)00127-8 bibtex: '@article{Mahnken_Kuhl_2002, title={Parameter identification of gradient enhanced damage models with the finite element method}, volume={18}, DOI={10.1016/s0997-7538(99)00127-8}, number={5}, journal={European Journal of Mechanics - A/Solids}, publisher={Elsevier BV}, author={Mahnken, Rolf and Kuhl, Ellen}, year={2002}, pages={819–835} }' chicago: 'Mahnken, Rolf, and Ellen Kuhl. “Parameter Identification of Gradient Enhanced Damage Models with the Finite Element Method.” European Journal of Mechanics - A/Solids 18, no. 5 (2002): 819–35. https://doi.org/10.1016/s0997-7538(99)00127-8.' ieee: 'R. Mahnken and E. Kuhl, “Parameter identification of gradient enhanced damage models with the finite element method,” European Journal of Mechanics - A/Solids, vol. 18, no. 5, pp. 819–835, 2002, doi: 10.1016/s0997-7538(99)00127-8.' mla: Mahnken, Rolf, and Ellen Kuhl. “Parameter Identification of Gradient Enhanced Damage Models with the Finite Element Method.” European Journal of Mechanics - A/Solids, vol. 18, no. 5, Elsevier BV, 2002, pp. 819–35, doi:10.1016/s0997-7538(99)00127-8. short: R. Mahnken, E. Kuhl, European Journal of Mechanics - A/Solids 18 (2002) 819–835. date_created: 2023-05-31T12:15:51Z date_updated: 2023-05-31T12:17:11Z department: - _id: '9' - _id: '154' doi: 10.1016/s0997-7538(99)00127-8 intvolume: ' 18' issue: '5' keyword: - General Physics and Astronomy - Mechanical Engineering - Mechanics of Materials - General Materials Science language: - iso: eng page: 819-835 publication: European Journal of Mechanics - A/Solids publication_identifier: issn: - 0997-7538 publication_status: published publisher: Elsevier BV quality_controlled: '1' status: public title: Parameter identification of gradient enhanced damage models with the finite element method type: journal_article user_id: '335' volume: 18 year: '2002' ... --- _id: '45429' author: - first_name: Rolf full_name: Mahnken, Rolf id: '335' last_name: Mahnken - first_name: Erwin full_name: Stein, Erwin last_name: Stein citation: ama: Mahnken R, Stein E. A unified approach for parameter identification of inelastic material models in the frame of the finite element method. Computer Methods in Applied Mechanics and Engineering. 2002;136(3-4):225-258. doi:10.1016/0045-7825(96)00991-7 apa: Mahnken, R., & Stein, E. (2002). A unified approach for parameter identification of inelastic material models in the frame of the finite element method. Computer Methods in Applied Mechanics and Engineering, 136(3–4), 225–258. https://doi.org/10.1016/0045-7825(96)00991-7 bibtex: '@article{Mahnken_Stein_2002, title={A unified approach for parameter identification of inelastic material models in the frame of the finite element method}, volume={136}, DOI={10.1016/0045-7825(96)00991-7}, number={3–4}, journal={Computer Methods in Applied Mechanics and Engineering}, publisher={Elsevier BV}, author={Mahnken, Rolf and Stein, Erwin}, year={2002}, pages={225–258} }' chicago: 'Mahnken, Rolf, and Erwin Stein. “A Unified Approach for Parameter Identification of Inelastic Material Models in the Frame of the Finite Element Method.” Computer Methods in Applied Mechanics and Engineering 136, no. 3–4 (2002): 225–58. https://doi.org/10.1016/0045-7825(96)00991-7.' ieee: 'R. Mahnken and E. Stein, “A unified approach for parameter identification of inelastic material models in the frame of the finite element method,” Computer Methods in Applied Mechanics and Engineering, vol. 136, no. 3–4, pp. 225–258, 2002, doi: 10.1016/0045-7825(96)00991-7.' mla: Mahnken, Rolf, and Erwin Stein. “A Unified Approach for Parameter Identification of Inelastic Material Models in the Frame of the Finite Element Method.” Computer Methods in Applied Mechanics and Engineering, vol. 136, no. 3–4, Elsevier BV, 2002, pp. 225–58, doi:10.1016/0045-7825(96)00991-7. short: R. Mahnken, E. Stein, Computer Methods in Applied Mechanics and Engineering 136 (2002) 225–258. date_created: 2023-05-31T12:22:58Z date_updated: 2023-05-31T12:23:36Z department: - _id: '9' - _id: '154' doi: 10.1016/0045-7825(96)00991-7 intvolume: ' 136' issue: 3-4 keyword: - Computer Science Applications - General Physics and Astronomy - Mechanical Engineering - Mechanics of Materials - Computational Mechanics language: - iso: eng page: 225-258 publication: Computer Methods in Applied Mechanics and Engineering publication_identifier: issn: - 0045-7825 publication_status: published publisher: Elsevier BV quality_controlled: '1' status: public title: A unified approach for parameter identification of inelastic material models in the frame of the finite element method type: journal_article user_id: '335' volume: 136 year: '2002' ... --- _id: '45432' author: - first_name: Rolf full_name: Mahnken, Rolf id: '335' last_name: Mahnken - first_name: E full_name: Stein, E last_name: Stein citation: ama: Mahnken R, Stein E. The identification of parameters for visco-plastic models via finite-element methods and gradient methods. Modelling and Simulation in Materials Science and Engineering. 2002;2(3A):597-616. doi:10.1088/0965-0393/2/3a/013 apa: Mahnken, R., & Stein, E. (2002). The identification of parameters for visco-plastic models via finite-element methods and gradient methods. Modelling and Simulation in Materials Science and Engineering, 2(3A), 597–616. https://doi.org/10.1088/0965-0393/2/3a/013 bibtex: '@article{Mahnken_Stein_2002, title={The identification of parameters for visco-plastic models via finite-element methods and gradient methods}, volume={2}, DOI={10.1088/0965-0393/2/3a/013}, number={3A}, journal={Modelling and Simulation in Materials Science and Engineering}, publisher={IOP Publishing}, author={Mahnken, Rolf and Stein, E}, year={2002}, pages={597–616} }' chicago: 'Mahnken, Rolf, and E Stein. “The Identification of Parameters for Visco-Plastic Models via Finite-Element Methods and Gradient Methods.” Modelling and Simulation in Materials Science and Engineering 2, no. 3A (2002): 597–616. https://doi.org/10.1088/0965-0393/2/3a/013.' ieee: 'R. Mahnken and E. Stein, “The identification of parameters for visco-plastic models via finite-element methods and gradient methods,” Modelling and Simulation in Materials Science and Engineering, vol. 2, no. 3A, pp. 597–616, 2002, doi: 10.1088/0965-0393/2/3a/013.' mla: Mahnken, Rolf, and E. Stein. “The Identification of Parameters for Visco-Plastic Models via Finite-Element Methods and Gradient Methods.” Modelling and Simulation in Materials Science and Engineering, vol. 2, no. 3A, IOP Publishing, 2002, pp. 597–616, doi:10.1088/0965-0393/2/3a/013. short: R. Mahnken, E. Stein, Modelling and Simulation in Materials Science and Engineering 2 (2002) 597–616. date_created: 2023-05-31T12:28:01Z date_updated: 2023-05-31T12:28:27Z department: - _id: '9' - _id: '154' doi: 10.1088/0965-0393/2/3a/013 intvolume: ' 2' issue: 3A keyword: - Computer Science Applications - Mechanics of Materials - Condensed Matter Physics - General Materials Science - Modeling and Simulation language: - iso: eng page: 597-616 publication: Modelling and Simulation in Materials Science and Engineering publication_identifier: issn: - 0965-0393 - 1361-651X publication_status: published publisher: IOP Publishing quality_controlled: '1' status: public title: The identification of parameters for visco-plastic models via finite-element methods and gradient methods type: journal_article user_id: '335' volume: 2 year: '2002' ...