---
_id: '20592'
abstract:
- lang: eng
  text: GaAs-(111)-nanostructures exhibiting second harmonic generation are new building
    blocks in nonlinear optics. Such structures can be fabricated through epitaxial
    lift-off using selective etching of Al-containing layers and subsequent transfer
    to glass substrates. Herein, the selective etching of (111)B-oriented AlxGa1−xAs
    sacrificial layers (10–50 nm thick) with different aluminum concentrations (x
    = 0.5–1.0) in 10\% hydrofluoric acid is investigated and compared with standard
    (100)-oriented structures. The thinner the sacrificial layer and the lower the
    aluminum content, the lower the lateral etch rate. For both orientations, the
    lateral etch rates are in the same order of magnitude, but some quantitative differences
    exist. Furthermore, the epitaxial lift-off, the transfer, and the nanopatterning
    of thin (111)B-oriented GaAs membranes are demonstrated. Atomic force microscopy
    and high-resolution X-ray diffraction measurements reveal the high structural
    quality of the transferred GaAs-(111) films.
article_type: original
author:
- first_name: Tobias
  full_name: Henksmeier, Tobias
  last_name: Henksmeier
- first_name: Martin
  full_name: Eppinger, Martin
  last_name: Eppinger
- first_name: Bernhard
  full_name: Reineke, Bernhard
  last_name: Reineke
- first_name: Thomas
  full_name: Zentgraf, Thomas
  id: '30525'
  last_name: Zentgraf
  orcid: 0000-0002-8662-1101
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
citation:
  ama: Henksmeier T, Eppinger M, Reineke B, Zentgraf T, Meier C, Reuter D. Selective
    Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off. <i>physica
    status solidi (a)</i>. 2021;218(3):2000408. doi:<a href="https://doi.org/10.1002/pssa.202000408">https://doi.org/10.1002/pssa.202000408</a>
  apa: Henksmeier, T., Eppinger, M., Reineke, B., Zentgraf, T., Meier, C., &#38; Reuter,
    D. (2021). Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial
    Lift-Off. <i>Physica Status Solidi (A)</i>, <i>218</i>(3), 2000408. <a href="https://doi.org/10.1002/pssa.202000408">https://doi.org/10.1002/pssa.202000408</a>
  bibtex: '@article{Henksmeier_Eppinger_Reineke_Zentgraf_Meier_Reuter_2021, title={Selective
    Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off}, volume={218},
    DOI={<a href="https://doi.org/10.1002/pssa.202000408">https://doi.org/10.1002/pssa.202000408</a>},
    number={3}, journal={physica status solidi (a)}, author={Henksmeier, Tobias and
    Eppinger, Martin and Reineke, Bernhard and Zentgraf, Thomas and Meier, Cedrik
    and Reuter, Dirk}, year={2021}, pages={2000408} }'
  chicago: 'Henksmeier, Tobias, Martin Eppinger, Bernhard Reineke, Thomas Zentgraf,
    Cedrik Meier, and Dirk Reuter. “Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers
    for Epitaxial Lift-Off.” <i>Physica Status Solidi (A)</i> 218, no. 3 (2021): 2000408.
    <a href="https://doi.org/10.1002/pssa.202000408">https://doi.org/10.1002/pssa.202000408</a>.'
  ieee: T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, and D. Reuter,
    “Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off,”
    <i>physica status solidi (a)</i>, vol. 218, no. 3, p. 2000408, 2021.
  mla: Henksmeier, Tobias, et al. “Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers
    for Epitaxial Lift-Off.” <i>Physica Status Solidi (A)</i>, vol. 218, no. 3, 2021,
    p. 2000408, doi:<a href="https://doi.org/10.1002/pssa.202000408">https://doi.org/10.1002/pssa.202000408</a>.
  short: T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, D. Reuter,
    Physica Status Solidi (A) 218 (2021) 2000408.
date_created: 2020-12-02T09:50:10Z
date_updated: 2022-01-06T06:54:30Z
department:
- _id: '230'
- _id: '429'
doi: https://doi.org/10.1002/pssa.202000408
intvolume: '       218'
issue: '3'
keyword:
- epitaxial lift-off
- GaAs/AlxGa1−xAs heterostructures
- selective etching
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.202000408
oa: '1'
page: '2000408'
project:
- _id: '53'
  name: TRR 142
- _id: '54'
  name: TRR 142 - Project Area A
- _id: '63'
  name: TRR 142 - Subproject A6
- _id: '56'
  name: TRR 142 - Project Area C
- _id: '75'
  name: TRR 142 - Subproject C5
publication: physica status solidi (a)
publication_status: published
status: public
title: Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off
type: journal_article
user_id: '30525'
volume: 218
year: '2021'
...