@article{4378,
  abstract     = {{Using a combined all-ultra-high-vacuum process employing lateral patterning with focused ion beams and molecular beam epitaxy, site-selective growth of single (In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally positioned quantum dots in the intrinsic region of a p-i-n junction so that the quantum dots can be driven electrically. In this contribution, we will present our results on the morphological properties of the ion-beam modified surface on which the quantum dot nucleation occurs together with a characterization of the electrical and optoelectronic properties. We will demonstrate that a single, individual quantum dot can directly be electrically addressed.}},
  author       = {{Mehta, Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Zrenner, Artur and Meier, Cedrik}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  keywords     = {{molecular beam epitaxy, quantum dot, site control, electroluminescence}},
  number       = {{4}},
  pages        = {{1182--1185}},
  publisher    = {{Wiley}},
  title        = {{{Electrically driven intentionally positioned single quantum dot}}},
  doi          = {{10.1002/pssc.201000828}},
  volume       = {{8}},
  year         = {{2011}},
}