@inproceedings{4312,
  abstract     = {{The intensity dependence of optically-induced injection currents in semiconductor quantum wells is investigated numerically. Oscillatory behavior of the electron charge current transients as function of intensity and time is predicted and explained.}},
  author       = {{Pochwala, Michal and Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}},
  booktitle    = {{CLEO:2011 - Laser Applications to Photonic Applications}},
  isbn         = {{9781557529107}},
  issn         = {{2160-8989 }},
  keywords     = {{tet_topic_qw}},
  location     = {{Baltimore, Maryland (USA)}},
  publisher    = {{Optical Society of America}},
  title        = {{{Intensity dependence of optically-induced injection currents in semiconductor quantum wells}}},
  doi          = {{10.1364/qels.2011.qmk4}},
  year         = {{2011}},
}

@article{4120,
  abstract     = {{The intensity dependence of optically-induced injection currents in unbiased GaAs semiconductor quantum wells grown in [110] direction is investigated theoretically for a number of well widths. Our microscopic analysis is based
on a 14 x 14 band k . p method in combination with the multisubband semiconductor Bloch equations. An oscillatory
dependence of the injection current transients as function of intensity and time is predicted and explained. It is demonstrated that optical excitations involving different subbands and Rabi flopping are responsible for this complex
dynamics.}},
  author       = {{Pochwała, Michał and Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}},
  issn         = {{1862-6254}},
  journal      = {{physica status solidi (RRL) - Rapid Research Letters}},
  keywords     = {{tet_topic_qw}},
  number       = {{3}},
  pages        = {{119--121}},
  publisher    = {{Wiley}},
  title        = {{{Intensity-dependent ultrafast dynamics of injection currents in unbiased GaAs quantum wells}}},
  doi          = {{10.1002/pssr.201004529}},
  volume       = {{5}},
  year         = {{2011}},
}

@article{4049,
  abstract     = {{The injection of photocurrents by femtosecond laser pulses in (110)-orientedGaAs/AlGaAs quantum wells is
investigated theoretically and experimentally. The roomtemperature measurements show an oscillatory dependence
of the injection current amplitude and direction on the excitation photon energy. Microscopic calculations using the semiconductor Bloch equations that are set up on the basis of k.p band structure calculations provide a detailed understanding of the experimental findings.}},
  author       = {{Thanh Duc, Huynh and Förstner, Jens and Meier, Torsten and Priyadarshi, Shekhar and Racu, Ana Maria and Pierz, Klaus and Siegner, Uwe and Bieler, Mark}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  keywords     = {{tet_topic_qw}},
  number       = {{4}},
  pages        = {{1137--1140}},
  publisher    = {{Wiley}},
  title        = {{{Oscillatory excitation energy dependence of injection currents in GaAs/AlGaAs quantum wells}}},
  doi          = {{10.1002/pssc.201000831}},
  volume       = {{8}},
  year         = {{2011}},
}

@inproceedings{4122,
  abstract     = {{We experimentally and theoretically investigate injection currents generated by femtosecond single-color circularly-polarized laser pulses in (110)-oriented GaAs quantum wells. The current measurements are performed by detecting the emitted Terahertz radiation at room temperature. The microscopic theory is based on a 14 x 14 k • p band-structure calculation in combination with the multi-subband semiconductor Bloch equations. For symmetric GaAs quantum wells grown in (110) direction, an oscillatory dependence of the injection currents on the exciting photon energy is obtained. The results of the microscopic theory are in good agreement with the measurements. }},
  author       = {{Duc, H. T. and Pochwala, M. and Förstner, Jens and Meier, Torsten and Priyadarshi, S. and Racu, A. M. and Pierz, K. and Siegner, U. and Bieler, M.}},
  booktitle    = {{Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV}},
  editor       = {{Tsen, Kong-Thon and Song, Jin-Joo and Betz, Markus and Elezzabi, Abdulhakem Y.}},
  keywords     = {{tet_topic_qw}},
  publisher    = {{SPIE}},
  title        = {{{Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment}}},
  doi          = {{10.1117/12.876972}},
  volume       = {{7937}},
  year         = {{2011}},
}

@article{4046,
  abstract     = {{We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs
single quantum wells, even a symmetric spatial envelope wave function gives rise to an asymmetric in-plane
electron Land´e g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus
splitting nor a direct consequence of the asymmetric Zeeman splitting of the hole bands, but rather it is a pure
higher-order effect that exists as well for diamond-type lattices. The measurements for various well widths are
very well described within 14 × 14 band k·p theory and illustrate that the electron spin is an excellent meter
variable for mapping out the internal—otherwise hidden—symmetries in two-dimensional systems. Fourth-order
perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a
qualitative understanding of the observed effects.}},
  author       = {{Hübner, J. and Kunz, S. and Oertel, S. and Schuh, D. and Pochwała, M. and Duc, H. T. and Förstner, Jens and Meier, Torsten and Oestreich, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qw}},
  number       = {{4}},
  pages        = {{041301(R)}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells}}},
  doi          = {{10.1103/physrevb.84.041301}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{4127,
  abstract     = {{The dynamics of charge and spin injection currents excited by circularly polarized, one-color laser beams in
semiconductor quantum wells is analyzed. Our microscopic approach is based on a 14x14 k · p band-structure
theory in combination with multisubband semiconductor Bloch equations which allows a detailed analysis of
the photogenerated carrier distributions and coherences in k space. Charge and spin injection currents are
numerically calculated for [110]- and [001]-grown GaAs quantum wells including dc population contributions
and ac contributions that arise from intersubband coherences. The dependencies of the injection currents on the
excitation conditions, in particular, the photon energy are computed and discussed.}},
  author       = {{Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qw}},
  number       = {{11}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells}}},
  doi          = {{10.1103/physrevb.82.115316}},
  volume       = {{82}},
  year         = {{2010}},
}

@inproceedings{4176,
  abstract     = {{A microscopic theory that describes injection currents in GaAs quantum wells is presented. 14 × 14 band k.p theory is used to compute the band structure including anisotropy and spin-orbit interaction. Transient injection currents are obtained via numerical solutions of the semiconductor Bloch equations. Depending on the growth direction of the considered quantum well system and the propagation and polarization directions of the incident light beam, it is possible to generate charge and/or spin photocurrents on ultrashort time scales. The dependence of the photocurrents on the excitation conditions is computed and discussed.}},
  author       = {{Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}},
  booktitle    = {{Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV}},
  editor       = {{Song, Jin-Joo and Tsen, Kong-Thon and Betz, Markus and Elezzabi, Abdulhakem Y.}},
  keywords     = {{tet_topic_qw}},
  pages        = {{76000S--76000S--9}},
  publisher    = {{SPIE}},
  title        = {{{Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells}}},
  doi          = {{10.1117/12.840388}},
  volume       = {{7600}},
  year         = {{2010}},
}

@article{4177,
  abstract     = {{Excitonic spectra of weakly disordered semiconductor heterostructures are simulated on the basis of a
one-dimensional tight-binding model. The influence of the length scale of weak disorder in quantum wells on
the redshift of the excitonic peak and its linewidth is studied. By calculating two-dimensional Fouriertransform
spectra we are able to determine the contribution of disorder to inhomogeneous and also to homogeneous
broadenings separately. This disorder-induced dephasing is related to a Fano-type coupling and leads
to contributions to the homogeneous linewidth that depends on energy within the inhomogeneously broadened
line. The model includes heavy- and light-hole excitons and yields smaller inhomogeneous broadening for the
light-hole exciton if compared to the heavy-hole exciton, which agrees qualitatively with the experiment.}},
  author       = {{Kuznetsova, I. and Gőgh, N. and Förstner, Jens and Meier, Torsten and Cundiff, S. T. and Varga, I. and Thomas, P.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qw}},
  number       = {{7}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Modeling excitonic line shapes in weakly disordered semiconductor nanostructures}}},
  doi          = {{10.1103/physrevb.81.075307}},
  volume       = {{81}},
  year         = {{2010}},
}

@article{4169,
  abstract     = {{It is demonstrated that valence-band mixing in GaAs quantum wells tremendously modifies electronic
transport. A coherent control scheme in which ultrafast currents are optically injected into undoped GaAs
quantum wells upon excitation with femtosecond laser pulses is employed. An oscillatory dependence of
the injection current amplitude and direction on the excitation photon energy is observed. A microscopic
theoretical analysis shows that this current reversal is caused by the coupling of the light- and heavy-hole
bands and that the hole currents dominate the overall current response. These surprising consequences of
band mixing illuminate fundamental physics as they are unique for experiments which are able to monitor
electronic transport resulting from carriers with relatively large momenta.}},
  author       = {{Priyadarshi, S. and Racu, A. M. and Pierz, K. and Siegner, U. and Bieler, M. and Duc, H. T. and Förstner, Jens and Meier, Torsten}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  keywords     = {{tet_topic_qw}},
  number       = {{21}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Reversal of Coherently Controlled Ultrafast Photocurrents by Band Mixing in Undoped GaAs Quantum Wells}}},
  doi          = {{10.1103/physrevlett.104.217401}},
  volume       = {{104}},
  year         = {{2010}},
}

@inproceedings{4184,
  abstract     = {{We have experimentally investigated injection currents generated by all-optical excitation of GaAs/AlGaAs quantum wells excited with 130 fs optical pulses. The currents have been detected via free-space THz experiments at room temperature. Our experiments prove that Coulomb effects strongly influence injection currents. This becomes most prominently visible when exciting light-hole exciton transitions. At this photon energy we observe a pronounced phase shift of the current transients which is due to oppositely oriented heavy-hole and light-hole type contributions. We are currently developing a microscopic theory based on a 14×14 k.p model in combination with the semiconductor Bloch equations to describe the observed features quantitatively. The combined theoretical and experimental approach will allow us to analyze the influence of the bandstructure and interaction effects on the injection current amplitude and current dynamics.}},
  author       = {{Bieler, M. and Pierz, K. and Siegner, U. and Dawson, P. and Duc, H. T. and Förstner, Jens and Meier, Torsten}},
  booktitle    = {{Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII}},
  editor       = {{Tsen, Kong-Thon and Song, Jin-Joo and Betz, Markus and Elezzabi, Abdulhakem Y.}},
  keywords     = {{tet_topic_qw}},
  location     = {{San Jose (California / USA)}},
  pages        = {{721404--721404--13}},
  publisher    = {{SPIE}},
  title        = {{{Generation of injection currents in (110)-oriented GaAs quantum wells: experimental observation and development of a microscopic theory}}},
  doi          = {{10.1117/12.811841}},
  volume       = {{7214}},
  year         = {{2009}},
}

@article{4256,
  abstract     = {{We present phase-resolved pulse propagation measurements that allow us to fully describe the transition
between several light–matter interaction regimes. The complete range from linear excitation to the breakdown
of the photonic bandgap on to self-induced transmission and self-phase modulation is studied on a
high-quality multiple-quantum-well Bragg structure. An improved fast-scanning cross-correlation
frequency-resolved optical gating setup is applied to retrieve the pulse phase with an excellent signal-tonoise
ratio. Calculations using the semiconductor Maxwell–Bloch equations show qualitative agreement
with the experimental findings. }},
  author       = {{zu Siederdissen, Tilman Höner and Nielsen, Nils C. and Kuhl, Jürgen and Schaarschmidt, Martin and Förstner, Jens and Knorr, Andreas and Khitrova, Galina and Gibbs, Hyatt M. and Koch, Stephan W. and Giessen, Harald}},
  issn         = {{0146-9592}},
  journal      = {{Optics Letters}},
  keywords     = {{tet_topic_polariton, tet_topic_qw}},
  number       = {{11}},
  publisher    = {{The Optical Society}},
  title        = {{{Transition between different coherent light–matter interaction regimes analyzed by phase-resolved pulse propagation}}},
  doi          = {{10.1364/ol.30.001384}},
  volume       = {{30}},
  year         = {{2008}},
}

@article{4249,
  abstract     = {{The interaction of electrons with LO phonons provides an important mechanism of optical dephasing and
carrier scattering for the two-dimensional electron gas in semiconductor quantum wells. In this paper, the
corresponding ultrafast nonlinearities for off-resonant and resonant intersubband excitations are investigated.
Quantum kinetic effects of the electron-phonon interaction and the corresponding violation of the microscopic
energy conservation yield a qualitative different picture compared to the standard Markovian theory, if the
phonon energy is larger than the intersubband-gap energy.}},
  author       = {{Butscher, Stefan and Förstner, Jens and Waldmüller, Inès and Knorr, Andreas}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qw}},
  number       = {{4}},
  pages        = {{045314--045314--4}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Ultrafast electron-phonon interaction of intersubband transitions: Quantum kinetics from adiabatic following to Rabi-oscillations}}},
  doi          = {{10.1103/physrevb.72.045314}},
  volume       = {{72}},
  year         = {{2005}},
}

@article{4270,
  abstract     = {{The adiabatic driving of the resonant electron dynamics in a one-dimensional resonant photonic band gap is
proposed as an optical mechanism for nonlinear ultrafast switching. Pulsed excitation inside the photonic gap
results in an ultrafast suppression and recovery of the gap. This behavior results from the adiabatic carrier
dynamics due to rapid radiative damping inside the band gap.}},
  author       = {{Schaarschmidt, Martin and Förstner, Jens and Knorr, Andreas and Prineas, John P. and Nielsen, Nils C. and Kuhl, Jürgen and Khitrova, Galina and Gibbs, Hyatt M. and Giessen, Harald and Koch, Stephan W.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qw}},
  number       = {{23}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Adiabatically driven electron dynamics in a resonant photonic band gap: Optical switching of a Bragg periodic semiconductor}}},
  doi          = {{10.1103/physrevb.70.233302}},
  volume       = {{70}},
  year         = {{2004}},
}

@article{4274,
  abstract     = {{We present a theory of the optical line shape of coherent intersubband transitions in a semiconductor
quantum well, considering non-Markovian LO-phonon scattering as major broadening mechanism. We
show that a quantum kinetic approach leads to additional polaron resonances and a resonance enhancement
for gap energies close to the phonon energy.}},
  author       = {{Butscher, S. and Förstner, Jens and Waldmüller, I. and Knorr, A.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{tet_topic_qw}},
  number       = {{11}},
  pages        = {{R49--R51}},
  publisher    = {{Wiley}},
  title        = {{{Polaron signatures in the line shape of semiconductor ;intersubband transitions: quantum kinetics of the electron–phonon interaction}}},
  doi          = {{10.1002/pssb.200409053}},
  volume       = {{241}},
  year         = {{2004}},
}

@article{4277,
  abstract     = {{We investigate the temporal and spectral properties of subpicosecond pulses transmitted on the heavy-hole
exciton transition through a multiple-quantum-well Bragg structure, exhibiting a one-dimensional photonic
band gap. At low light intensities, a temporal propagation beating is observed. This beating is strongly dependent
on the optical dephasing time T2 which is dominated by the radiative interwell coupling. In an intermediate
intensity regime, the Pauli-blocking nonlinearity leads to gradual suppression of the photonic band gap
and vanishing of the linear propagation beating. For highly nonlinear excitation, we find signatures of selfinduced
transmission due to Rabi flopping and adiabatic following of the carrier density. Numerical simulations
using the semiconductor Maxwell-Bloch equations are in excellent agreement with the experimental data up to
intensities for which higher many-particle correlations become more important and self-phase modulation
occurs in the sample substrate.}},
  author       = {{Nielsen, N. C. and Kuhl, J. and Schaarschmidt, M. and Förstner, Jens and Knorr, A. and Koch, S. W. and Khitrova, G. and Gibbs, H. M. and Giessen, H.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qw}},
  number       = {{7}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Linear and nonlinear pulse propagation in a multiple-quantum-well photonic crystal}}},
  doi          = {{10.1103/physrevb.70.075306}},
  volume       = {{70}},
  year         = {{2004}},
}

@inproceedings{4282,
  abstract     = {{We investigate theoretically the ultrafast nonlinear suppression of the resonant photonic
band gap by strong laser pulses in semiconductor multiple qnantum wells. We achieve good
agreement with our measurements on reflection samples.}},
  author       = {{Schaarschmidt, Martin and Förstner, Jens and Knorr, Andreas and Prineas, John P. and Nielsen, Nils C. and Kuhl, Jürgen and Kithrova, Galina and Gibbs, Hyatt M. and Giessen, Harald and Koch, Stephan W.}},
  booktitle    = {{Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies}},
  isbn         = {{1-55752-778-4 }},
  keywords     = {{tet_topic_qw}},
  location     = {{San Francisco, California (USA) }},
  publisher    = {{OSA}},
  title        = {{{Nonlinear light pulse propagation in Bragg-periodic multiple semiconductor quantum well samples: ultrafast switching of a resonant photonic band gap}}},
  doi          = {{10.1364/iqec.2004.iwa3}},
  year         = {{2004}},
}

@inbook{4286,
  abstract     = {{Due to their many-particle character and their application in quantum cascade lasers, optical intersubband excitations in semiconductor quantum wells have become the focus of many recent publications [1,2]. In samples of high quality,
intrinsic processes like electron-electron and electron-phonon many particle correlations determine the basic optical and transport properties such as lineshape and ultrafast dynamics. At the same time, intersubband excitations allow
the direct investigation of dynamical properties of an important model system of many particle physics - the two-dimensional electron gas. We here present a microscopic theory for the intersubband dynamics and absorption.
The calculation of absorption spectra of MQW systems is in principle composed of two parts: the determination of the polarization in a single quantum well within a density matrix approach as the source of electromagnetic radiation
(Fig. 1a) and the calculation of the generated fields in the geometry of interest (Fig. 1b) within a Green's function approach [3,4]. We will here focus on the so-called single-pass geometry (cf. Fig. 1b, [5]).}},
  author       = {{Waldmüller, Ines and Förstner, Jens and Knorr, Andreas }},
  booktitle    = {{Nonequilibrium Physics at Short Time Scales}},
  editor       = {{Morawetz, Klaus}},
  isbn         = {{9783642057458}},
  keywords     = {{tet_topic_qw}},
  publisher    = {{Springer Berlin Heidelberg}},
  title        = {{{Self-consistent Projection Operator Theory of Intersubband Absorbance in Semiconductor Quantum Wells}}},
  doi          = {{10.1007/978-3-662-08990-3}},
  year         = {{2004}},
}

@phdthesis{4319,
  abstract     = {{In dieser Arbeit wird eine Theorie vorgestellt, welche die quantenmechanische Vielteilchenphysik
der Licht-Materie Wechselwirkung in Halbleiternanostrukturen beschreibt. Diese mikroskopische Beschreibung
wird durch Kombination eines allgemeinen Dichtematrixansatzes mit speziellen Methoden
zur Auswertung der Maxwellgleichungen wie der zeitaufgelösten Finite-Differenzen-Methode
(FDTD) erreicht. Die Theorie wird auf verschiedene physikalische Situationen angewendet, wie z.B.
Lichtausbreitung in Volumenhalbleitern, Interband- und Intersubbandübergänge in Quantenfilmstrukturen
und optische Anregung von Quantenpunkten. Der Fokus liegt dabei auf der Beschreibung der
linearen und nichtlinearen Antwort des Vielteilchensystems und seiner Ankopplung an das elektromagnetische
Feld. In diesem Zusammenhang wird sowohl die Erzeugung als auch der Zerfall von optischen
Anregungen untersucht, indem verschiedene Kopplungsmechanismen wie Elektron-Phonon-,
Elektron-Photon- und Elektron-Elektron-Wechselwirkung berücksichtigt werden.
Im Bereich der linearen Optik, also für Anregung mit geringer Intensität, ermöglicht die Theorie
die Berechnung von Absorptionsspektren. Verschiedene Effekte in linearer Optik werden in dieser
Arbeit untersucht und beschrieben: Linienaufspaltung durch Polaritonen im Volumenmaterial, Zunahme
der Linienbreite bei Intersubbandübergängen verursacht durch Elektron-Elektron- und Elektron-
Phonon-Streuung in einzelnen Quantenfilmen, Bildung einer optischen Bandlücke durch starke radiative
Kopplung in Vielfilmstrukturen in Bragg-Geometrie, Phononenseitenbänder verursacht durch
quantenkinetische Effekte in einzelnen Quantenpunkten und schliesslich Superradianz und Interferenzeffekte
in Quantenpunktgittern.
Bei nichtlinearer Anregung treten Dichte-Rabiflops als fundamentale Prozesse in allen betrachteten
Systemen auf und können als kohärente Be- und Entvölkerung von quantenmechanischen Zuständen
beobachtet werden. Der Einfluss von starker Lichtkopplung und verschiedenen Wechselwirkungen
auf dynamische Größen wie die Besetzung wird untersucht. Bei nichtlinearer Propagation, bei
der sich ein starker Lichtpuls über längere Strecken in einem System bewegt, wird selbstinduzierte
Verstärkung der Transmission näher betrachtet. Des weiteren werden von der Coulombwechselwirkung
verursachte nichtlineare Effekte wie exzitoninduziertes Dephasieren in Volumenmaterial und
verschränkte Zustände in Quantenpunkten untersucht, die einen Zusammenbruch der Hartree-Fock-
Näherung darstellen.
Zusammenfassend werden in dieser Arbeit verschiedene lineare und nichtlineare optische Effekte
in Halbleiternanostrukturen verschiedener Dimensionalität mit Hilfe einer allgemeinen Theorie, die
einen Dichtematrixansatz mit den Maxwellschen Gleichungen kombiniert, untersucht.}},
  author       = {{Förstner, Jens}},
  keywords     = {{tet_topic_qd, tet_topic_qw, tet_topic_phc}},
  title        = {{{Light Propagation and Many-Particle Effects in Semiconductor Nanostructures}}},
  doi          = {{10.14279/depositonce-999}},
  year         = {{2004}},
}

@article{4290,
  abstract     = {{The nonlinear propagation of subpicosecond pulses resonant to the hh 1s exciton in Bragg-periodic
multiple quantum wells is investigated experimentally and theoretically. We show coherent pulse breakup
and its suppression for increasing pulse intensity in good agreement with calculations based on the
semiconductor Maxwell-Bloch equations. For highly nonlinear excitation, pulse compression is observed
which is strongly enhanced by the additional contribution of self-phase modulation in the barrier
and substrate material.}},
  author       = {{Nielsen, N. C. and Kuhl, J. and Schaarschmidt, M. and Förstner, Jens and Knorr, A. and Koch, S. W. and Gibbs, H. M. and Khitrova, G. and Giessen, H.}},
  issn         = {{1610-1634}},
  journal      = {{physica status solidi (c)}},
  keywords     = {{tet_topic_qw}},
  number       = {{5}},
  pages        = {{1484--1487}},
  publisher    = {{Wiley}},
  title        = {{{Pulse propagation in Bragg-resonant multiple quantum wells: from pulse breakup to compression}}},
  doi          = {{10.1002/pssc.200303207}},
  year         = {{2003}},
}

@article{4292,
  abstract     = {{We outline a theoretical description of the absorption linewidth of quantum well intersubband transitions
by solving Maxwell’s equations for a non-local susceptibility including many particle effects. We
show that the intersubband absorption results from a complex interplay between mean-field effects,
dephasing contributions and light propagation effects, all being very sensitive to subband dispersion.}},
  author       = {{Waldmüller, Inès and Woerner, Michael and Förstner, Jens and Knorr, Andreas}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{tet_topic_qw}},
  number       = {{3}},
  pages        = {{474--477}},
  publisher    = {{Wiley}},
  title        = {{{Theory of the lineshape of quantum well intersubband transitions: optical dephasing and light propagation effects}}},
  doi          = {{10.1002/pssb.200303165}},
  volume       = {{238}},
  year         = {{2003}},
}

