--- _id: '46132' author: - first_name: Mario full_name: Littmann, Mario last_name: Littmann - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. physica status solidi (b). 2023;260(7). doi:10.1002/pssb.202300034 apa: Littmann, M., Reuter, D., & As, D. J. (2023). Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. Physica Status Solidi (b), 260(7). https://doi.org/10.1002/pssb.202300034 bibtex: '@article{Littmann_Reuter_As_2023, title={Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy}, volume={260}, DOI={10.1002/pssb.202300034}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Littmann, Mario and Reuter, Dirk and As, Donat Josef}, year={2023} }' chicago: Littmann, Mario, Dirk Reuter, and Donat Josef As. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” Physica Status Solidi (b) 260, no. 7 (2023). https://doi.org/10.1002/pssb.202300034. ieee: 'M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,” physica status solidi (b), vol. 260, no. 7, 2023, doi: 10.1002/pssb.202300034.' mla: Littmann, Mario, et al. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” Physica Status Solidi (b), vol. 260, no. 7, Wiley, 2023, doi:10.1002/pssb.202300034. short: M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023). date_created: 2023-07-25T08:06:13Z date_updated: 2023-07-25T08:07:20Z department: - _id: '15' - _id: '230' doi: 10.1002/pssb.202300034 intvolume: ' 260' issue: '7' keyword: - Condensed Matter Physics - Electronic - Optical and Magnetic Materials language: - iso: eng publication: physica status solidi (b) publication_identifier: issn: - 0370-1972 - 1521-3951 publication_status: published publisher: Wiley status: public title: Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy type: journal_article user_id: '42514' volume: 260 year: '2023' ... --- _id: '46741' author: - first_name: Mario Fabian full_name: Zscherp, Mario Fabian last_name: Zscherp - first_name: Silas Aurel full_name: Jentsch, Silas Aurel last_name: Jentsch - first_name: Marius Johannes full_name: Müller, Marius Johannes last_name: Müller - first_name: Vitalii full_name: Lider, Vitalii last_name: Lider - first_name: Celina full_name: Becker, Celina last_name: Becker - first_name: Limei full_name: Chen, Limei last_name: Chen - first_name: Mario full_name: Littmann, Mario last_name: Littmann - first_name: Falco full_name: Meier, Falco last_name: Meier - first_name: Andreas full_name: Beyer, Andreas last_name: Beyer - first_name: Detlev Michael full_name: Hofmann, Detlev Michael last_name: Hofmann - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: Peter Jens full_name: Klar, Peter Jens last_name: Klar - first_name: Kerstin full_name: Volz, Kerstin last_name: Volz - first_name: Sangam full_name: Chatterjee, Sangam last_name: Chatterjee - first_name: Jörg full_name: Schörmann, Jörg last_name: Schörmann citation: ama: Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces. 2023;15(33):39513-39522. doi:10.1021/acsami.3c06319 apa: Zscherp, M. F., Jentsch, S. A., Müller, M. J., Lider, V., Becker, C., Chen, L., Littmann, M., Meier, F., Beyer, A., Hofmann, D. M., As, D. J., Klar, P. J., Volz, K., Chatterjee, S., & Schörmann, J. (2023). Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces, 15(33), 39513–39522. https://doi.org/10.1021/acsami.3c06319 bibtex: '@article{Zscherp_Jentsch_Müller_Lider_Becker_Chen_Littmann_Meier_Beyer_Hofmann_et al._2023, title={Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN}, volume={15}, DOI={10.1021/acsami.3c06319}, number={33}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Zscherp, Mario Fabian and Jentsch, Silas Aurel and Müller, Marius Johannes and Lider, Vitalii and Becker, Celina and Chen, Limei and Littmann, Mario and Meier, Falco and Beyer, Andreas and Hofmann, Detlev Michael and et al.}, year={2023}, pages={39513–39522} }' chicago: 'Zscherp, Mario Fabian, Silas Aurel Jentsch, Marius Johannes Müller, Vitalii Lider, Celina Becker, Limei Chen, Mario Littmann, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.” ACS Applied Materials & Interfaces 15, no. 33 (2023): 39513–22. https://doi.org/10.1021/acsami.3c06319.' ieee: 'M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN,” ACS Applied Materials & Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi: 10.1021/acsami.3c06319.' mla: Zscherp, Mario Fabian, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.” ACS Applied Materials & Interfaces, vol. 15, no. 33, American Chemical Society (ACS), 2023, pp. 39513–22, doi:10.1021/acsami.3c06319. short: M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials & Interfaces 15 (2023) 39513–39522. date_created: 2023-08-28T06:45:20Z date_updated: 2023-08-28T06:46:23Z department: - _id: '15' - _id: '230' doi: 10.1021/acsami.3c06319 intvolume: ' 15' issue: '33' keyword: - General Materials Science language: - iso: eng page: 39513-39522 publication: ACS Applied Materials & Interfaces publication_identifier: issn: - 1944-8244 - 1944-8252 publication_status: published publisher: American Chemical Society (ACS) status: public title: Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN type: journal_article user_id: '42514' volume: 15 year: '2023' ... --- _id: '46573' abstract: - lang: eng text: 'An ultra-fast change of the absorption onset for zincblende gallium-nitride (zb-GaN) (fundamental bandgap: 3.23 eV) is observed by investigating the imaginary part of the dielectric function using time-dependent femtosecond pump–probe spectroscopic ellipsometry between 2.9 and 3.7 eV. The 266 nm (4.66 eV) pump pulses induce a large electron–hole pair concentration up to 4×1020cm−3, which shift the transition energy between conduction and valence bands due to many-body effects up to ≈500 meV. Here, the absorption onset increases due to band filling while the bandgap renormalization at the same time decreases the bandgap. Additionally, the absorption of the pump-beam creates a free-carrier profile within the 605 nm zb-GaN layer with high free-carrier concentrations at the surface, and low concentrations at the interface to the substrate. This leads to varying optical properties from the sample surface (high transition energy) to substrate (low transition energy), which are taken into account by grading analysis for an accurate description of the experimental data. For this, a model describing the time- and position-dependent free-carrier concentration is formulated by considering the relaxation, recombination, and diffusion of those carriers. We provide a quantitative analysis of optical experimental data (ellipsometric angles Ψ and Δ) as well as a plot for the time-dependent change of the imaginary part of the dielectric function.' author: - first_name: Elias full_name: Baron, Elias last_name: Baron - first_name: Rüdiger full_name: Goldhahn, Rüdiger last_name: Goldhahn - first_name: Shirly full_name: Espinoza, Shirly last_name: Espinoza - first_name: Martin full_name: Zahradník, Martin last_name: Zahradník - first_name: Mateusz full_name: Rebarz, Mateusz last_name: Rebarz - first_name: Jakob full_name: Andreasson, Jakob last_name: Andreasson - first_name: Michael full_name: Deppe, Michael last_name: Deppe - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: Martin full_name: Feneberg, Martin last_name: Feneberg citation: ama: Baron E, Goldhahn R, Espinoza S, et al. Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics. 2023;134(7). doi:10.1063/5.0153091 apa: Baron, E., Goldhahn, R., Espinoza, S., Zahradník, M., Rebarz, M., Andreasson, J., Deppe, M., As, D. J., & Feneberg, M. (2023). Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics, 134(7). https://doi.org/10.1063/5.0153091 bibtex: '@article{Baron_Goldhahn_Espinoza_Zahradník_Rebarz_Andreasson_Deppe_As_Feneberg_2023, title={Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function}, volume={134}, DOI={10.1063/5.0153091}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Baron, Elias and Goldhahn, Rüdiger and Espinoza, Shirly and Zahradník, Martin and Rebarz, Mateusz and Andreasson, Jakob and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2023} }' chicago: Baron, Elias, Rüdiger Goldhahn, Shirly Espinoza, Martin Zahradník, Mateusz Rebarz, Jakob Andreasson, Michael Deppe, Donat Josef As, and Martin Feneberg. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination of the Dielectric Function.” Journal of Applied Physics 134, no. 7 (2023). https://doi.org/10.1063/5.0153091. ieee: 'E. Baron et al., “Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function,” Journal of Applied Physics, vol. 134, no. 7, 2023, doi: 10.1063/5.0153091.' mla: Baron, Elias, et al. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination of the Dielectric Function.” Journal of Applied Physics, vol. 134, no. 7, AIP Publishing, 2023, doi:10.1063/5.0153091. short: E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023). date_created: 2023-08-18T08:17:41Z date_updated: 2023-10-09T09:17:15Z department: - _id: '15' - _id: '230' doi: 10.1063/5.0153091 intvolume: ' 134' issue: '7' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function type: journal_article user_id: '14931' volume: 134 year: '2023' ... --- _id: '35232' article_number: '2200508' author: - first_name: Falco full_name: Meier, Falco last_name: Meier - first_name: Mario full_name: Littmann, Mario last_name: Littmann - first_name: Julius full_name: Bürger, Julius id: '46952' last_name: Bürger - first_name: Thomas full_name: Riedl, Thomas id: '36950' last_name: Riedl - first_name: Daniel full_name: Kool, Daniel id: '44586' last_name: Kool - first_name: Jörg full_name: Lindner, Jörg id: '20797' last_name: Lindner - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b). Published online 2022. doi:10.1002/pssb.202200508 apa: Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter, D., & As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. Physica Status Solidi (b), Article 2200508. https://doi.org/10.1002/pssb.202200508 bibtex: '@article{Meier_Littmann_Bürger_Riedl_Kool_Lindner_Reuter_As_2022, title={Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}, DOI={10.1002/pssb.202200508}, number={2200508}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Falco and Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner, Jörg and Reuter, Dirk and As, Donat Josef}, year={2022} }' chicago: Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool, Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” Physica Status Solidi (b), 2022. https://doi.org/10.1002/pssb.202200508. ieee: 'F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no. 2200508, 2022, doi: 10.1002/pssb.202200508.' mla: Meier, Falco, et al. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” Physica Status Solidi (b), 2200508, Wiley, 2022, doi:10.1002/pssb.202200508. short: F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022). date_created: 2023-01-04T14:51:51Z date_updated: 2023-01-04T14:53:24Z department: - _id: '15' doi: 10.1002/pssb.202200508 keyword: - Condensed Matter Physics - Electronic - Optical and Magnetic Materials language: - iso: eng publication: physica status solidi (b) publication_identifier: issn: - 0370-1972 - 1521-3951 publication_status: published publisher: Wiley status: public title: Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks type: journal_article user_id: '77496' year: '2022' ... --- _id: '23842' article_number: '025101' author: - first_name: Elias full_name: Baron, Elias last_name: Baron - first_name: Martin full_name: Feneberg, Martin last_name: Feneberg - first_name: Rüdiger full_name: Goldhahn, Rüdiger last_name: Goldhahn - first_name: Michael full_name: Deppe, Michael last_name: Deppe - first_name: Fabian full_name: Tacken, Fabian last_name: Tacken - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: 'Baron E, Feneberg M, Goldhahn R, Deppe M, Tacken F, As DJ. Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system. Journal of Physics D: Applied Physics. 2021. doi:10.1088/1361-6463/abb97a' apa: 'Baron, E., Feneberg, M., Goldhahn, R., Deppe, M., Tacken, F., & As, D. J. (2021). Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system. Journal of Physics D: Applied Physics. https://doi.org/10.1088/1361-6463/abb97a' bibtex: '@article{Baron_Feneberg_Goldhahn_Deppe_Tacken_As_2021, title={Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system}, DOI={10.1088/1361-6463/abb97a}, number={025101}, journal={Journal of Physics D: Applied Physics}, author={Baron, Elias and Feneberg, Martin and Goldhahn, Rüdiger and Deppe, Michael and Tacken, Fabian and As, Donat Josef}, year={2021} }' chicago: 'Baron, Elias, Martin Feneberg, Rüdiger Goldhahn, Michael Deppe, Fabian Tacken, and Donat Josef As. “Optical Evidence of Many-Body Effects in the Zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-X}$N Alloy System.” Journal of Physics D: Applied Physics, 2021. https://doi.org/10.1088/1361-6463/abb97a.' ieee: 'E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, and D. J. As, “Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system,” Journal of Physics D: Applied Physics, 2021.' mla: 'Baron, Elias, et al. “Optical Evidence of Many-Body Effects in the Zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-X}$N Alloy System.” Journal of Physics D: Applied Physics, 025101, 2021, doi:10.1088/1361-6463/abb97a.' short: 'E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, D.J. As, Journal of Physics D: Applied Physics (2021).' date_created: 2021-09-07T09:19:46Z date_updated: 2022-01-06T06:56:01Z department: - _id: '230' - _id: '429' doi: 10.1088/1361-6463/abb97a language: - iso: eng publication: 'Journal of Physics D: Applied Physics' publication_identifier: issn: - 0022-3727 - 1361-6463 publication_status: published status: public title: Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system type: journal_article user_id: '14' year: '2021' ... --- _id: '25227' abstract: - lang: eng text: AbstractQuantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaging in momentum space. Additional information can be gained by angle-resolved photoelectron spectroscopy (ARPES), which measures the electronic structure with momentum resolution. Here we report on the use of extremely low-energy ARPES (photon energy ~ 7 eV) to increase depth sensitivity and access buried QW states, located at 3 nm and 6 nm below the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We find that the QW states in cubic-GaN/AlN can indeed be observed, but not their energy dispersion, because of the high surface roughness. The GaAs/AlGaAs QW states, on the other hand, are buried too deep to be detected by extremely low-energy ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs show distinct features in momentum space, which can be reconducted to the band structure of the topmost surface layer of the QW structure. Our results provide important information about the samples’ properties required to perform extremely low-energy ARPES experiments on electronic states buried in semiconductor heterostructures. article_number: '19081' article_type: original author: - first_name: Mahdi full_name: Hajlaoui, Mahdi last_name: Hajlaoui - first_name: Stefano full_name: Ponzoni, Stefano last_name: Ponzoni - first_name: Michael full_name: Deppe, Michael last_name: Deppe - first_name: Tobias full_name: Henksmeier, Tobias last_name: Henksmeier - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Thomas full_name: Zentgraf, Thomas id: '30525' last_name: Zentgraf orcid: 0000-0002-8662-1101 - first_name: Gunther full_name: Springholz, Gunther last_name: Springholz - first_name: Claus Michael full_name: Schneider, Claus Michael last_name: Schneider - first_name: Stefan full_name: Cramm, Stefan last_name: Cramm - first_name: Mirko full_name: Cinchetti, Mirko last_name: Cinchetti citation: ama: Hajlaoui M, Ponzoni S, Deppe M, et al. Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports. 2021;11. doi:10.1038/s41598-021-98569-6 apa: Hajlaoui, M., Ponzoni, S., Deppe, M., Henksmeier, T., As, D. J., Reuter, D., Zentgraf, T., Springholz, G., Schneider, C. M., Cramm, S., & Cinchetti, M. (2021). Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports, 11, Article 19081. https://doi.org/10.1038/s41598-021-98569-6 bibtex: '@article{Hajlaoui_Ponzoni_Deppe_Henksmeier_As_Reuter_Zentgraf_Springholz_Schneider_Cramm_et al._2021, title={Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures}, volume={11}, DOI={10.1038/s41598-021-98569-6}, number={19081}, journal={Scientific Reports}, author={Hajlaoui, Mahdi and Ponzoni, Stefano and Deppe, Michael and Henksmeier, Tobias and As, Donat Josef and Reuter, Dirk and Zentgraf, Thomas and Springholz, Gunther and Schneider, Claus Michael and Cramm, Stefan and et al.}, year={2021} }' chicago: Hajlaoui, Mahdi, Stefano Ponzoni, Michael Deppe, Tobias Henksmeier, Donat Josef As, Dirk Reuter, Thomas Zentgraf, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” Scientific Reports 11 (2021). https://doi.org/10.1038/s41598-021-98569-6. ieee: 'M. Hajlaoui et al., “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” Scientific Reports, vol. 11, Art. no. 19081, 2021, doi: 10.1038/s41598-021-98569-6.' mla: Hajlaoui, Mahdi, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” Scientific Reports, vol. 11, 19081, 2021, doi:10.1038/s41598-021-98569-6. short: M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021). date_created: 2021-10-01T07:29:15Z date_updated: 2023-10-09T09:15:12Z department: - _id: '15' - _id: '230' - _id: '289' doi: 10.1038/s41598-021-98569-6 intvolume: ' 11' language: - iso: eng main_file_link: - open_access: '1' url: https://www.nature.com/articles/s41598-021-98569-6 oa: '1' project: - _id: '53' grant_number: '231447078' name: TRR 142 - _id: '54' name: TRR 142 - Project Area A - _id: '65' grant_number: '231447078' name: TRR 142 - Subproject A8 - _id: '55' name: TRR 142 - Project Area B - _id: '67' name: TRR 142 - Subproject B2 - _id: '63' grant_number: '231447078' name: TRR 142 - Subproject A6 publication: Scientific Reports publication_identifier: issn: - 2045-2322 publication_status: published quality_controlled: '1' status: public title: Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures type: journal_article user_id: '14931' volume: 11 year: '2021' ... --- _id: '23843' article_number: '075013' author: - first_name: F. full_name: Meier, F. last_name: Meier - first_name: M. full_name: Protte, M. last_name: Protte - first_name: E. full_name: Baron, E. last_name: Baron - first_name: M. full_name: Feneberg, M. last_name: Feneberg - first_name: R. full_name: Goldhahn, R. last_name: Goldhahn - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances. Published online 2021. doi:10.1063/5.0053865 apa: Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., & As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances, Article 075013. https://doi.org/10.1063/5.0053865 bibtex: '@article{Meier_Protte_Baron_Feneberg_Goldhahn_Reuter_As_2021, title={Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)}, DOI={10.1063/5.0053865}, number={075013}, journal={AIP Advances}, author={Meier, F. and Protte, M. and Baron, E. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}, year={2021} }' chicago: Meier, F., M. Protte, E. Baron, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” AIP Advances, 2021. https://doi.org/10.1063/5.0053865. ieee: 'F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, Art. no. 075013, 2021, doi: 10.1063/5.0053865.' mla: Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” AIP Advances, 075013, 2021, doi:10.1063/5.0053865. short: F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021). date_created: 2021-09-07T09:20:42Z date_updated: 2023-10-09T09:01:15Z department: - _id: '230' - _id: '429' doi: 10.1063/5.0053865 language: - iso: eng publication: AIP Advances publication_identifier: issn: - 2158-3226 publication_status: published status: public title: Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001) type: journal_article user_id: '14931' year: '2021' ... --- _id: '23838' author: - first_name: Abbes full_name: Beloufa, Abbes last_name: Beloufa - first_name: Driss full_name: Bouguenna, Driss last_name: Bouguenna - first_name: Nawel full_name: Kermas, Nawel last_name: Kermas - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Beloufa A, Bouguenna D, Kermas N, As DJ. A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. Journal of Electronic Materials. 2020:2008-2017. doi:10.1007/s11664-019-07927-8 apa: Beloufa, A., Bouguenna, D., Kermas, N., & As, D. J. (2020). A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. Journal of Electronic Materials, 2008–2017. https://doi.org/10.1007/s11664-019-07927-8 bibtex: '@article{Beloufa_Bouguenna_Kermas_As_2020, title={A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs}, DOI={10.1007/s11664-019-07927-8}, journal={Journal of Electronic Materials}, author={Beloufa, Abbes and Bouguenna, Driss and Kermas, Nawel and As, Donat Josef}, year={2020}, pages={2008–2017} }' chicago: Beloufa, Abbes, Driss Bouguenna, Nawel Kermas, and Donat Josef As. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” Journal of Electronic Materials, 2020, 2008–17. https://doi.org/10.1007/s11664-019-07927-8. ieee: A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,” Journal of Electronic Materials, pp. 2008–2017, 2020. mla: Beloufa, Abbes, et al. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” Journal of Electronic Materials, 2020, pp. 2008–17, doi:10.1007/s11664-019-07927-8. short: A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017. date_created: 2021-09-07T09:15:01Z date_updated: 2022-01-06T06:56:01Z department: - _id: '230' doi: 10.1007/s11664-019-07927-8 language: - iso: eng page: 2008-2017 publication: Journal of Electronic Materials publication_identifier: issn: - 0361-5235 - 1543-186X publication_status: published status: public title: A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs type: journal_article user_id: '14' year: '2020' ... --- _id: '23840' article_number: '1900522' author: - first_name: Elias full_name: Baron, Elias last_name: Baron - first_name: Rüdiger full_name: Goldhahn, Rüdiger last_name: Goldhahn - first_name: Michael full_name: Deppe, Michael last_name: Deppe - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: Martin full_name: Feneberg, Martin last_name: Feneberg citation: ama: Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. physica status solidi (b). 2020. doi:10.1002/pssb.201900522 apa: Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2020). Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900522 bibtex: '@article{Baron_Goldhahn_Deppe_As_Feneberg_2020, title={Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN}, DOI={10.1002/pssb.201900522}, number={1900522}, journal={physica status solidi (b)}, author={Baron, Elias and Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2020} }' chicago: Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende GaN.” Physica Status Solidi (B), 2020. https://doi.org/10.1002/pssb.201900522. ieee: E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” physica status solidi (b), 2020. mla: Baron, Elias, et al. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende GaN.” Physica Status Solidi (B), 1900522, 2020, doi:10.1002/pssb.201900522. short: E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020). date_created: 2021-09-07T09:17:31Z date_updated: 2022-01-06T06:56:01Z department: - _id: '230' - _id: '429' doi: 10.1002/pssb.201900522 language: - iso: eng publication: physica status solidi (b) publication_identifier: issn: - 0370-1972 - 1521-3951 publication_status: published status: public title: Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN type: journal_article user_id: '14' year: '2020' ... --- _id: '23841' article_number: '1900532' author: - first_name: Michael full_name: Deppe, Michael last_name: Deppe - first_name: Tobias full_name: Henksmeier, Tobias last_name: Henksmeier - first_name: Jürgen W. full_name: Gerlach, Jürgen W. last_name: Gerlach - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532 apa: Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900532 bibtex: '@article{Deppe_Henksmeier_Gerlach_Reuter_As_2020, title={Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N}, DOI={10.1002/pssb.201900532}, number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}, year={2020} }' chicago: Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” Physica Status Solidi (B), 2020. https://doi.org/10.1002/pssb.201900532. ieee: M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), 2020. mla: Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” Physica Status Solidi (B), 1900532, 2020, doi:10.1002/pssb.201900532. short: M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020). date_created: 2021-09-07T09:18:26Z date_updated: 2022-01-06T06:56:01Z department: - _id: '230' - _id: '429' doi: 10.1002/pssb.201900532 language: - iso: eng publication: physica status solidi (b) publication_identifier: issn: - 0370-1972 - 1521-3951 publication_status: published status: public title: Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N type: journal_article user_id: '14' year: '2020' ... --- _id: '23831' author: - first_name: Elias full_name: Baron, Elias last_name: Baron - first_name: Rüdiger full_name: Goldhahn, Rüdiger last_name: Goldhahn - first_name: Michael full_name: Deppe, Michael last_name: Deppe - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: Martin full_name: Feneberg, Martin last_name: Feneberg citation: ama: Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. Physical Review Materials. 2019. doi:10.1103/physrevmaterials.3.104603 apa: Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2019). Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. Physical Review Materials. https://doi.org/10.1103/physrevmaterials.3.104603 bibtex: '@article{Baron_Goldhahn_Deppe_As_Feneberg_2019, title={Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3}, DOI={10.1103/physrevmaterials.3.104603}, journal={Physical Review Materials}, author={Baron, Elias and Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2019} }' chicago: Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm−3.” Physical Review Materials, 2019. https://doi.org/10.1103/physrevmaterials.3.104603. ieee: E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3,” Physical Review Materials, 2019. mla: Baron, Elias, et al. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm−3.” Physical Review Materials, 2019, doi:10.1103/physrevmaterials.3.104603. short: E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019). date_created: 2021-09-07T08:40:08Z date_updated: 2022-01-06T06:56:01Z department: - _id: '230' - _id: '429' doi: 10.1103/physrevmaterials.3.104603 language: - iso: eng publication: Physical Review Materials publication_identifier: issn: - 2475-9953 publication_status: published status: public title: Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3 type: journal_article user_id: '14' year: '2019' ... --- _id: '8646' article_number: '095703' author: - first_name: M. full_name: Deppe, M. last_name: Deppe - first_name: J. W. full_name: Gerlach, J. W. last_name: Gerlach - first_name: S. full_name: Shvarkov, S. last_name: Shvarkov - first_name: D. full_name: Rogalla, D. last_name: Rogalla - first_name: H.-W. full_name: Becker, H.-W. last_name: Becker - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. 2019. doi:10.1063/1.5066095 apa: Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter, D., & As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. https://doi.org/10.1063/1.5066095 bibtex: '@article{Deppe_Gerlach_Shvarkov_Rogalla_Becker_Reuter_As_2019, title={Germanium doping of cubic GaN grown by molecular beam epitaxy}, DOI={10.1063/1.5066095}, number={095703}, journal={Journal of Applied Physics}, author={Deppe, M. and Gerlach, J. W. and Shvarkov, S. and Rogalla, D. and Becker, H.-W. and Reuter, Dirk and As, Donat Josef}, year={2019} }' chicago: Deppe, M., J. W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, Dirk Reuter, and Donat Josef As. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” Journal of Applied Physics, 2019. https://doi.org/10.1063/1.5066095. ieee: M. Deppe et al., “Germanium doping of cubic GaN grown by molecular beam epitaxy,” Journal of Applied Physics, 2019. mla: Deppe, M., et al. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” Journal of Applied Physics, 095703, 2019, doi:10.1063/1.5066095. short: M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019). date_created: 2019-03-26T12:48:57Z date_updated: 2022-01-06T07:03:58Z department: - _id: '230' - _id: '429' doi: 10.1063/1.5066095 language: - iso: eng project: - _id: '67' name: TRR 142 - Subproject B2 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Germanium doping of cubic GaN grown by molecular beam epitaxy type: journal_article user_id: '14' year: '2019' ... --- _id: '13965' article_number: '153901' author: - first_name: J. H. full_name: Buß, J. H. last_name: Buß - first_name: T. full_name: Schupp, T. last_name: Schupp - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: D. full_name: Hägele, D. last_name: Hägele - first_name: J. full_name: Rudolph, J. last_name: Rudolph citation: ama: Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2019. doi:10.1063/1.5123914 apa: Buß, J. H., Schupp, T., As, D. J., Hägele, D., & Rudolph, J. (2019). Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics. https://doi.org/10.1063/1.5123914 bibtex: '@article{Buß_Schupp_As_Hägele_Rudolph_2019, title={Optical excitation density dependence of spin dynamics in bulk cubic GaN}, DOI={10.1063/1.5123914}, number={153901}, journal={Journal of Applied Physics}, author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2019} }' chicago: Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” Journal of Applied Physics, 2019. https://doi.org/10.1063/1.5123914. ieee: J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation density dependence of spin dynamics in bulk cubic GaN,” Journal of Applied Physics, 2019. mla: Buß, J. H., et al. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” Journal of Applied Physics, 153901, 2019, doi:10.1063/1.5123914. short: J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics (2019). date_created: 2019-10-22T12:26:02Z date_updated: 2022-01-06T06:51:48Z department: - _id: '230' - _id: '429' doi: 10.1063/1.5123914 language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Optical excitation density dependence of spin dynamics in bulk cubic GaN type: journal_article user_id: '14' year: '2019' ... --- _id: '13966' author: - first_name: Elias full_name: Baron, Elias last_name: Baron - first_name: Rüdiger full_name: Goldhahn, Rüdiger last_name: Goldhahn - first_name: Michael full_name: Deppe, Michael last_name: Deppe - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: Martin full_name: Feneberg, Martin last_name: Feneberg citation: ama: Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. Physical Review Materials. 2019. doi:10.1103/physrevmaterials.3.104603 apa: Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2019). Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. Physical Review Materials. https://doi.org/10.1103/physrevmaterials.3.104603 bibtex: '@article{Baron_Goldhahn_Deppe_As_Feneberg_2019, title={Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3}, DOI={10.1103/physrevmaterials.3.104603}, journal={Physical Review Materials}, author={Baron, Elias and Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2019} }' chicago: Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm−3.” Physical Review Materials, 2019. https://doi.org/10.1103/physrevmaterials.3.104603. ieee: E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3,” Physical Review Materials, 2019. mla: Baron, Elias, et al. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm−3.” Physical Review Materials, 2019, doi:10.1103/physrevmaterials.3.104603. short: E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019). date_created: 2019-10-22T12:27:30Z date_updated: 2022-01-06T06:51:48Z department: - _id: '230' - _id: '429' doi: 10.1103/physrevmaterials.3.104603 language: - iso: eng publication: Physical Review Materials publication_identifier: issn: - 2475-9953 publication_status: published status: public title: Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3 type: journal_article user_id: '14' year: '2019' ... --- _id: '15444' article_number: '1900532' author: - first_name: Michael full_name: Deppe, Michael last_name: Deppe - first_name: Tobias full_name: Henksmeier, Tobias last_name: Henksmeier - first_name: Jürgen W. full_name: Gerlach, Jürgen W. last_name: Gerlach - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Donat J. full_name: As, Donat J. id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. physica status solidi (b). Published online 2019. doi:10.1002/pssb.201900532 apa: Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2019). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. Physica Status Solidi (b), Article 1900532. https://doi.org/10.1002/pssb.201900532 bibtex: '@article{Deppe_Henksmeier_Gerlach_Reuter_As_2019, title={Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N}, DOI={10.1002/pssb.201900532}, number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat J.}, year={2019} }' chicago: Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and Donat J. As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” Physica Status Solidi (b), 2019. https://doi.org/10.1002/pssb.201900532. ieee: 'M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), Art. no. 1900532, 2019, doi: 10.1002/pssb.201900532.' mla: Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” Physica Status Solidi (b), 1900532, 2019, doi:10.1002/pssb.201900532. short: M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019). date_created: 2020-01-07T10:09:27Z date_updated: 2023-10-09T09:03:47Z department: - _id: '15' - _id: '230' doi: 10.1002/pssb.201900532 language: - iso: eng main_file_link: - open_access: '1' oa: '1' publication: physica status solidi (b) publication_identifier: issn: - 0370-1972 - 1521-3951 publication_status: published status: public title: Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N type: journal_article user_id: '14931' year: '2019' ... --- _id: '4809' author: - first_name: Leonilson K.S. full_name: Herval, Leonilson K.S. last_name: Herval - first_name: Marcio P.F. full_name: de Godoy, Marcio P.F. last_name: de Godoy - first_name: Tobias full_name: Wecker, Tobias last_name: Wecker - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Herval LKS, de Godoy MPF, Wecker T, As DJ. Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. Journal of Luminescence. 2018;198:309-313. doi:10.1016/j.jlumin.2018.02.051 apa: Herval, L. K. S., de Godoy, M. P. F., Wecker, T., & As, D. J. (2018). Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. Journal of Luminescence, 198, 309–313. https://doi.org/10.1016/j.jlumin.2018.02.051 bibtex: '@article{Herval_de Godoy_Wecker_As_2018, title={Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures}, volume={198}, DOI={10.1016/j.jlumin.2018.02.051}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herval, Leonilson K.S. and de Godoy, Marcio P.F. and Wecker, Tobias and As, Donat Josef}, year={2018}, pages={309–313} }' chicago: 'Herval, Leonilson K.S., Marcio P.F. de Godoy, Tobias Wecker, and Donat Josef As. “Investigation on Interface-Related Defects by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.” Journal of Luminescence 198 (2018): 309–13. https://doi.org/10.1016/j.jlumin.2018.02.051.' ieee: L. K. S. Herval, M. P. F. de Godoy, T. Wecker, and D. J. As, “Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures,” Journal of Luminescence, vol. 198, pp. 309–313, 2018. mla: Herval, Leonilson K. S., et al. “Investigation on Interface-Related Defects by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.” Journal of Luminescence, vol. 198, Elsevier BV, 2018, pp. 309–13, doi:10.1016/j.jlumin.2018.02.051. short: L.K.S. Herval, M.P.F. de Godoy, T. Wecker, D.J. As, Journal of Luminescence 198 (2018) 309–313. date_created: 2018-10-24T08:00:01Z date_updated: 2022-01-06T07:01:24Z doi: 10.1016/j.jlumin.2018.02.051 intvolume: ' 198' page: 309-313 publication: Journal of Luminescence publication_identifier: issn: - 0022-2313 publication_status: published publisher: Elsevier BV status: public title: Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures type: journal_article user_id: '14' volume: 198 year: '2018' ... --- _id: '7022' article_number: '1700457' author: - first_name: Sarah full_name: Blumenthal, Sarah last_name: Blumenthal - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(5). doi:10.1002/pssb.201700457 apa: Blumenthal, S., Reuter, D., & As, D. J. (2018). Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (B), 255(5). https://doi.org/10.1002/pssb.201700457 bibtex: '@article{Blumenthal_Reuter_As_2018, title={Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255}, DOI={10.1002/pssb.201700457}, number={51700457}, journal={physica status solidi (b)}, publisher={Wiley}, author={Blumenthal, Sarah and Reuter, Dirk and As, Donat Josef}, year={2018} }' chicago: Blumenthal, Sarah, Dirk Reuter, and Donat Josef As. “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status Solidi (B) 255, no. 5 (2018). https://doi.org/10.1002/pssb.201700457. ieee: S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 5, 2018. mla: Blumenthal, Sarah, et al. “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status Solidi (B), vol. 255, no. 5, 1700457, Wiley, 2018, doi:10.1002/pssb.201700457. short: S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018). date_created: 2019-01-28T09:40:01Z date_updated: 2022-01-06T07:03:26Z department: - _id: '15' - _id: '230' doi: 10.1002/pssb.201700457 intvolume: ' 255' issue: '5' language: - iso: eng publication: physica status solidi (b) publication_identifier: issn: - 0370-1972 publication_status: published publisher: Wiley status: public title: Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy type: journal_article user_id: '42514' volume: 255 year: '2018' ... --- _id: '4350' author: - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: Klaus full_name: Lischka, Klaus last_name: Lischka citation: ama: 'As DJ, Lischka K. Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications. In: Molecular Beam Epitaxy. Elsevier; 2018:95-114. doi:10.1016/b978-0-12-812136-8.00006-2' apa: 'As, D. J., & Lischka, K. (2018). Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications. In Molecular Beam Epitaxy (pp. 95–114). Elsevier. https://doi.org/10.1016/b978-0-12-812136-8.00006-2' bibtex: '@inbook{As_Lischka_2018, title={Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications}, DOI={10.1016/b978-0-12-812136-8.00006-2}, booktitle={Molecular Beam Epitaxy}, publisher={Elsevier}, author={As, Donat Josef and Lischka, Klaus}, year={2018}, pages={95–114} }' chicago: 'As, Donat Josef, and Klaus Lischka. “Nonpolar Cubic III-Nitrides: From the Basics of Growth to Device Applications.” In Molecular Beam Epitaxy, 95–114. Elsevier, 2018. https://doi.org/10.1016/b978-0-12-812136-8.00006-2.' ieee: 'D. J. As and K. Lischka, “Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications,” in Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.' mla: 'As, Donat Josef, and Klaus Lischka. “Nonpolar Cubic III-Nitrides: From the Basics of Growth to Device Applications.” Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114, doi:10.1016/b978-0-12-812136-8.00006-2.' short: 'D.J. As, K. Lischka, in: Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.' date_created: 2018-09-04T13:11:48Z date_updated: 2022-01-06T07:00:58Z doi: 10.1016/b978-0-12-812136-8.00006-2 page: 95-114 publication: Molecular Beam Epitaxy publication_identifier: isbn: - '9780128121368' publication_status: published publisher: Elsevier status: public title: 'Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications' type: book_chapter user_id: '14' year: '2018' ... --- _id: '20588' abstract: - lang: eng text: We have investigated the stacking of self-assembled cubic GaN quantum dots (QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers is varied to compare their optical properties. The growth is in situ controlled by reflection high energy electron diffraction to prove the SK QD growth. Atomic force and transmission electron microscopy show the existence of wetting layer and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence measurements show an increase of the intensity with increasing number of stacked QD layers. Furthermore, a systematic blue-shift of 120 meV is observed with increasing number of stacked QD layers. This blueshift derives from a decrease in the QD height, because the QD height has also been the main confining dimension in our QDs. article_type: original author: - first_name: Sarah full_name: Blumenthal, Sarah last_name: Blumenthal - first_name: Torsten full_name: Rieger, Torsten last_name: Rieger - first_name: Doris full_name: Meertens, Doris last_name: Meertens - first_name: Alexander full_name: Pawlis, Alexander last_name: Pawlis - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(3):1600729. doi:https://doi.org/10.1002/pssb.201600729 apa: Blumenthal, S., Rieger, T., Meertens, D., Pawlis, A., Reuter, D., & As, D. J. (2018). Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (b), 255(3), 1600729. https://doi.org/10.1002/pssb.201600729 bibtex: '@article{Blumenthal_Rieger_Meertens_Pawlis_Reuter_As_2018, title={Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255}, DOI={https://doi.org/10.1002/pssb.201600729}, number={3}, journal={physica status solidi (b)}, author={Blumenthal, Sarah and Rieger, Torsten and Meertens, Doris and Pawlis, Alexander and Reuter, Dirk and As, Donat Josef}, year={2018}, pages={1600729} }' chicago: 'Blumenthal, Sarah, Torsten Rieger, Doris Meertens, Alexander Pawlis, Dirk Reuter, and Donat Josef As. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status Solidi (b) 255, no. 3 (2018): 1600729. https://doi.org/10.1002/pssb.201600729.' ieee: 'S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As, “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 3, p. 1600729, 2018, doi: https://doi.org/10.1002/pssb.201600729.' mla: Blumenthal, Sarah, et al. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status Solidi (b), vol. 255, no. 3, 2018, p. 1600729, doi:https://doi.org/10.1002/pssb.201600729. short: S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729. date_created: 2020-12-02T09:38:00Z date_updated: 2023-10-09T09:19:40Z department: - _id: '230' - _id: '429' doi: https://doi.org/10.1002/pssb.201600729 intvolume: ' 255' issue: '3' keyword: - cubic crystals - GaN - molecular beam epitaxy - quantum dots language: - iso: eng page: '1600729' project: - _id: '53' grant_number: '231447078' name: TRR 142 - _id: '54' name: TRR 142 - Project Area A - _id: '63' grant_number: '231447078' name: TRR 142 - Subproject A6 publication: physica status solidi (b) publication_identifier: issn: - 0370-1972 publication_status: published status: public title: Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy type: journal_article user_id: '14931' volume: 255 year: '2018' ... --- _id: '4808' article_number: '1700373' author: - first_name: Tobias full_name: Wecker, Tobias last_name: Wecker - first_name: Gordon full_name: Callsen, Gordon last_name: Callsen - first_name: Axel full_name: Hoffmann, Axel last_name: Hoffmann - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. physica status solidi (b). 2017;255(5). doi:10.1002/pssb.201700373 apa: Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., & As, D. J. (2017). Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. Physica Status Solidi (B), 255(5). https://doi.org/10.1002/pssb.201700373 bibtex: '@article{Wecker_Callsen_Hoffmann_Reuter_As_2017, title={Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells}, volume={255}, DOI={10.1002/pssb.201700373}, number={51700373}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker, Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef}, year={2017} }' chicago: Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef As. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status Solidi (B) 255, no. 5 (2017). https://doi.org/10.1002/pssb.201700373. ieee: T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells,” physica status solidi (b), vol. 255, no. 5, 2017. mla: Wecker, Tobias, et al. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status Solidi (B), vol. 255, no. 5, 1700373, Wiley, 2017, doi:10.1002/pssb.201700373. short: T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017). date_created: 2018-10-24T07:59:23Z date_updated: 2022-01-06T07:01:24Z doi: 10.1002/pssb.201700373 intvolume: ' 255' issue: '5' publication: physica status solidi (b) publication_identifier: issn: - 0370-1972 publication_status: published publisher: Wiley status: public title: Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells type: journal_article user_id: '14' volume: 255 year: '2017' ...