[{"doi":"10.3390/cryst15110913","article_number":"913","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2026-05-21T06:36:29Z","intvolume":"        15","year":"2025","title":"Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet Epitaxy","publication_identifier":{"issn":["2073-4352"]},"author":[{"first_name":"Dennis","last_name":"Deutsch","full_name":"Deutsch, Dennis","id":"23489"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"}],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2026-05-21T06:35:35Z","abstract":[{"lang":"eng","text":"<jats:p>Local droplet etching and subsequent refilling enables the fabrication of highly symmetric quantum dots with low fine structure splitting, suitable for generating polarization entangled photons. While well established in GaAs/AlxGa1−xAs, this approach does not yield emission in the telecom bands required for low loss fiber-based quantum communication. To achieve emission at 1.55 μm, local droplet etching must be adapted to alternative material platforms such as InP. Here, we systematically investigate how the etching material deposition rate and etching time influence nanohole morphology in In0.52Al0.48As layers lattice-matched to InP. In the first experiment, InAl was deposited at fluxes of 0.2–4.0 Å s−1 at Tetch = 350 °C and 460 °C. Lower fluxes produced nanoholes with lower density and larger ring diameters, indicating fewer and larger initial droplets, consistent with scaling theory. The average nanohole diameter decreased monotonically with increasing flux, whereas the average depth showed no clear dependence on flux. In the second experiment, etching times of 30–600 s were tested for InAl, In, and Al droplets. Average nanohole diameters remained constant for Al across all etching times, but decreased for In and InAl with increasing etching time, suggesting sidewall redeposition during etching. For all droplet types, depths peaked at intermediate times and decreased for prolonged etching, consistent with material diffusion into the nanohole after droplet consumption.</jats:p>"}],"publication":"Crystals","issue":"11","user_id":"42514","volume":15,"_id":"65669","publisher":"MDPI AG","status":"public","citation":{"short":"D. Deutsch, D. Reuter, Crystals 15 (2025).","chicago":"Deutsch, Dennis, and Dirk Reuter. “Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet Epitaxy.” <i>Crystals</i> 15, no. 11 (2025). <a href=\"https://doi.org/10.3390/cryst15110913\">https://doi.org/10.3390/cryst15110913</a>.","apa":"Deutsch, D., &#38; Reuter, D. (2025). Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet Epitaxy. <i>Crystals</i>, <i>15</i>(11), Article 913. <a href=\"https://doi.org/10.3390/cryst15110913\">https://doi.org/10.3390/cryst15110913</a>","ieee":"D. Deutsch and D. Reuter, “Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet Epitaxy,” <i>Crystals</i>, vol. 15, no. 11, Art. no. 913, 2025, doi: <a href=\"https://doi.org/10.3390/cryst15110913\">10.3390/cryst15110913</a>.","ama":"Deutsch D, Reuter D. Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet Epitaxy. <i>Crystals</i>. 2025;15(11). doi:<a href=\"https://doi.org/10.3390/cryst15110913\">10.3390/cryst15110913</a>","bibtex":"@article{Deutsch_Reuter_2025, title={Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet Epitaxy}, volume={15}, DOI={<a href=\"https://doi.org/10.3390/cryst15110913\">10.3390/cryst15110913</a>}, number={11913}, journal={Crystals}, publisher={MDPI AG}, author={Deutsch, Dennis and Reuter, Dirk}, year={2025} }","mla":"Deutsch, Dennis, and Dirk Reuter. “Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet Epitaxy.” <i>Crystals</i>, vol. 15, no. 11, 913, MDPI AG, 2025, doi:<a href=\"https://doi.org/10.3390/cryst15110913\">10.3390/cryst15110913</a>."}},{"language":[{"iso":"eng"}],"doi":"10.1063/5.0147281","title":"Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers","year":"2023","publication_identifier":{"issn":["2158-3226"]},"author":[{"id":"23489","first_name":"Dennis","last_name":"Deutsch","full_name":"Deutsch, Dennis"},{"full_name":"Buchholz, C.","first_name":"C.","last_name":"Buchholz"},{"first_name":"V.","last_name":"Zolatanosha","full_name":"Zolatanosha, V."},{"full_name":"Jöns, K. D.","first_name":"K. D.","last_name":"Jöns"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"}],"date_updated":"2024-12-10T07:32:35Z","publication_status":"published","intvolume":"        13","date_created":"2024-12-10T07:31:41Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"issue":"5","publication":"AIP Advances","abstract":[{"text":"<jats:p>We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system lattice matched to InP, as future sources for single and entangled photons for long-haul fiber-based quantum communication in the optical C-band. We achieved these quantum dots by local droplet etching via InAl droplets in an In0.52Al0.48As layer and subsequent filling of the holes with In0.53Ga0.47As. Here, we present detailed investigations of the hole morphologies measured by atomic force microscopy. Statistical analysis of a set of nanoholes reveals a high degree of symmetry for nearly half of them when etched at optimized temperatures. Overgrowth with 50–150 nm In0.52Al0.48As increases their diameter and elongates the holes along the [01̄1]-direction. By systematically scanning the parameter space, we were able to fill the holes with In0.53Ga0.47As, and by capping the filled holes and performing photoluminescence measurements, we observe photoluminescence emission in the O-band up into the C-band depending on the filling height of the nanoholes.</jats:p>","lang":"eng"}],"_id":"57677","publisher":"AIP Publishing","user_id":"42514","volume":13,"status":"public","citation":{"mla":"Deutsch, Dennis, et al. “Telecom C-Band Photon Emission from (In,Ga)As Quantum Dots Generated by Filling Nanoholes in In0.52Al0.48As Layers.” <i>AIP Advances</i>, vol. 13, no. 5, AIP Publishing, 2023, doi:<a href=\"https://doi.org/10.1063/5.0147281\">10.1063/5.0147281</a>.","ama":"Deutsch D, Buchholz C, Zolatanosha V, Jöns KD, Reuter D. Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers. <i>AIP Advances</i>. 2023;13(5). doi:<a href=\"https://doi.org/10.1063/5.0147281\">10.1063/5.0147281</a>","bibtex":"@article{Deutsch_Buchholz_Zolatanosha_Jöns_Reuter_2023, title={Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers}, volume={13}, DOI={<a href=\"https://doi.org/10.1063/5.0147281\">10.1063/5.0147281</a>}, number={5}, journal={AIP Advances}, publisher={AIP Publishing}, author={Deutsch, Dennis and Buchholz, C. and Zolatanosha, V. and Jöns, K. D. and Reuter, Dirk}, year={2023} }","apa":"Deutsch, D., Buchholz, C., Zolatanosha, V., Jöns, K. D., &#38; Reuter, D. (2023). Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers. <i>AIP Advances</i>, <i>13</i>(5). <a href=\"https://doi.org/10.1063/5.0147281\">https://doi.org/10.1063/5.0147281</a>","ieee":"D. Deutsch, C. Buchholz, V. Zolatanosha, K. D. Jöns, and D. Reuter, “Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers,” <i>AIP Advances</i>, vol. 13, no. 5, 2023, doi: <a href=\"https://doi.org/10.1063/5.0147281\">10.1063/5.0147281</a>.","short":"D. Deutsch, C. Buchholz, V. Zolatanosha, K.D. Jöns, D. Reuter, AIP Advances 13 (2023).","chicago":"Deutsch, Dennis, C. Buchholz, V. Zolatanosha, K. D. Jöns, and Dirk Reuter. “Telecom C-Band Photon Emission from (In,Ga)As Quantum Dots Generated by Filling Nanoholes in In0.52Al0.48As Layers.” <i>AIP Advances</i> 13, no. 5 (2023). <a href=\"https://doi.org/10.1063/5.0147281\">https://doi.org/10.1063/5.0147281</a>."}}]