---
_id: '65669'
abstract:
- lang: eng
text: Local droplet etching and subsequent refilling enables the fabrication
of highly symmetric quantum dots with low fine structure splitting, suitable for
generating polarization entangled photons. While well established in GaAs/AlxGa1−xAs,
this approach does not yield emission in the telecom bands required for low loss
fiber-based quantum communication. To achieve emission at 1.55 μm, local droplet
etching must be adapted to alternative material platforms such as InP. Here, we
systematically investigate how the etching material deposition rate and etching
time influence nanohole morphology in In0.52Al0.48As layers lattice-matched to
InP. In the first experiment, InAl was deposited at fluxes of 0.2–4.0 Å s−1 at
Tetch = 350 °C and 460 °C. Lower fluxes produced nanoholes with lower density
and larger ring diameters, indicating fewer and larger initial droplets, consistent
with scaling theory. The average nanohole diameter decreased monotonically with
increasing flux, whereas the average depth showed no clear dependence on flux.
In the second experiment, etching times of 30–600 s were tested for InAl, In,
and Al droplets. Average nanohole diameters remained constant for Al across all
etching times, but decreased for In and InAl with increasing etching time, suggesting
sidewall redeposition during etching. For all droplet types, depths peaked at
intermediate times and decreased for prolonged etching, consistent with material
diffusion into the nanohole after droplet consumption.
article_number: '913'
author:
- first_name: Dennis
full_name: Deutsch, Dennis
id: '23489'
last_name: Deutsch
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Deutsch D, Reuter D. Influence of the Etching Material Deposition Rate and
Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via
Local Droplet Epitaxy. Crystals. 2025;15(11). doi:10.3390/cryst15110913
apa: Deutsch, D., & Reuter, D. (2025). Influence of the Etching Material Deposition
Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As
Layers via Local Droplet Epitaxy. Crystals, 15(11), Article 913.
https://doi.org/10.3390/cryst15110913
bibtex: '@article{Deutsch_Reuter_2025, title={Influence of the Etching Material
Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As
Layers via Local Droplet Epitaxy}, volume={15}, DOI={10.3390/cryst15110913},
number={11913}, journal={Crystals}, publisher={MDPI AG}, author={Deutsch, Dennis
and Reuter, Dirk}, year={2025} }'
chicago: Deutsch, Dennis, and Dirk Reuter. “Influence of the Etching Material Deposition
Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As
Layers via Local Droplet Epitaxy.” Crystals 15, no. 11 (2025). https://doi.org/10.3390/cryst15110913.
ieee: 'D. Deutsch and D. Reuter, “Influence of the Etching Material Deposition Rate
and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers
via Local Droplet Epitaxy,” Crystals, vol. 15, no. 11, Art. no. 913, 2025,
doi: 10.3390/cryst15110913.'
mla: Deutsch, Dennis, and Dirk Reuter. “Influence of the Etching Material Deposition
Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As
Layers via Local Droplet Epitaxy.” Crystals, vol. 15, no. 11, 913, MDPI
AG, 2025, doi:10.3390/cryst15110913.
short: D. Deutsch, D. Reuter, Crystals 15 (2025).
date_created: 2026-05-21T06:35:35Z
date_updated: 2026-05-21T06:36:29Z
department:
- _id: '15'
- _id: '230'
doi: 10.3390/cryst15110913
intvolume: ' 15'
issue: '11'
language:
- iso: eng
publication: Crystals
publication_identifier:
issn:
- 2073-4352
publication_status: published
publisher: MDPI AG
status: public
title: Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole
Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet Epitaxy
type: journal_article
user_id: '42514'
volume: 15
year: '2025'
...
---
_id: '57677'
abstract:
- lang: eng
text: We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system
lattice matched to InP, as future sources for single and entangled photons for
long-haul fiber-based quantum communication in the optical C-band. We achieved
these quantum dots by local droplet etching via InAl droplets in an In0.52Al0.48As
layer and subsequent filling of the holes with In0.53Ga0.47As. Here, we present
detailed investigations of the hole morphologies measured by atomic force microscopy.
Statistical analysis of a set of nanoholes reveals a high degree of symmetry for
nearly half of them when etched at optimized temperatures. Overgrowth with 50–150 nm
In0.52Al0.48As increases their diameter and elongates the holes along the [01̄1]-direction.
By systematically scanning the parameter space, we were able to fill the holes
with In0.53Ga0.47As, and by capping the filled holes and performing photoluminescence
measurements, we observe photoluminescence emission in the O-band up into the
C-band depending on the filling height of the nanoholes.
author:
- first_name: Dennis
full_name: Deutsch, Dennis
id: '23489'
last_name: Deutsch
- first_name: C.
full_name: Buchholz, C.
last_name: Buchholz
- first_name: V.
full_name: Zolatanosha, V.
last_name: Zolatanosha
- first_name: K. D.
full_name: Jöns, K. D.
last_name: Jöns
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Deutsch D, Buchholz C, Zolatanosha V, Jöns KD, Reuter D. Telecom C-band photon
emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As
layers. AIP Advances. 2023;13(5). doi:10.1063/5.0147281
apa: Deutsch, D., Buchholz, C., Zolatanosha, V., Jöns, K. D., & Reuter, D. (2023).
Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling
nanoholes in In0.52Al0.48As layers. AIP Advances, 13(5). https://doi.org/10.1063/5.0147281
bibtex: '@article{Deutsch_Buchholz_Zolatanosha_Jöns_Reuter_2023, title={Telecom
C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes
in In0.52Al0.48As layers}, volume={13}, DOI={10.1063/5.0147281},
number={5}, journal={AIP Advances}, publisher={AIP Publishing}, author={Deutsch,
Dennis and Buchholz, C. and Zolatanosha, V. and Jöns, K. D. and Reuter, Dirk},
year={2023} }'
chicago: Deutsch, Dennis, C. Buchholz, V. Zolatanosha, K. D. Jöns, and Dirk Reuter.
“Telecom C-Band Photon Emission from (In,Ga)As Quantum Dots Generated by Filling
Nanoholes in In0.52Al0.48As Layers.” AIP Advances 13, no. 5 (2023). https://doi.org/10.1063/5.0147281.
ieee: 'D. Deutsch, C. Buchholz, V. Zolatanosha, K. D. Jöns, and D. Reuter, “Telecom
C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes
in In0.52Al0.48As layers,” AIP Advances, vol. 13, no. 5, 2023, doi: 10.1063/5.0147281.'
mla: Deutsch, Dennis, et al. “Telecom C-Band Photon Emission from (In,Ga)As Quantum
Dots Generated by Filling Nanoholes in In0.52Al0.48As Layers.” AIP Advances,
vol. 13, no. 5, AIP Publishing, 2023, doi:10.1063/5.0147281.
short: D. Deutsch, C. Buchholz, V. Zolatanosha, K.D. Jöns, D. Reuter, AIP Advances
13 (2023).
date_created: 2024-12-10T07:31:41Z
date_updated: 2024-12-10T07:32:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0147281
intvolume: ' 13'
issue: '5'
language:
- iso: eng
publication: AIP Advances
publication_identifier:
issn:
- 2158-3226
publication_status: published
publisher: AIP Publishing
status: public
title: Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling
nanoholes in In0.52Al0.48As layers
type: journal_article
user_id: '42514'
volume: 13
year: '2023'
...