@article{35232,
  author       = {{Meier, Falco and Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner, Jörg and Reuter, Dirk and As, Donat Josef}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}},
  publisher    = {{Wiley}},
  title        = {{{Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}}},
  doi          = {{10.1002/pssb.202200508}},
  year         = {{2022}},
}

@article{34056,
  abstract     = {{<jats:p> A process sequence enabling the large-area fabrication of nanopillar-patterned semiconductor templates for selective-area heteroepitaxy is developed. Herein, the nanopillar tops surrounded by a SiN<jats:sub>x</jats:sub> mask film serve as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such patterned GaAs[Formula: see text]A templates is investigated by means of electron microscopy. It is found that defect-free nanoscale InAs islands grow selectively on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular dark-field scanning transmission electron microscopy imaging reveals that for a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite phase arms extending along the lateral [Formula: see text] directions from the central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed vapor–liquid–solid growth on [Formula: see text] B facets, which leads to a kinetically induced preference for the nucleation of the wurtzite phase driven by the local, instantaneous V/III ratio, and to a concomitant reduction of surface energy of the nanoscale diameter arms. </jats:p>}},
  author       = {{Riedl, Thomas and Kunnathully, Vinay S. and Verma, Akshay Kumar and Langer, Timo and Reuter, Dirk and Büker, Björn and Hütten, Andreas and Lindner, Jörg}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{18}},
  publisher    = {{AIP Publishing}},
  title        = {{{Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A}}},
  doi          = {{10.1063/5.0121559}},
  volume       = {{132}},
  year         = {{2022}},
}

@article{34053,
  author       = {{Riedl, Thomas and Kunnathully, Vinay and Trapp, Alexander and Langer, Timo and Reuter, Dirk and Lindner, Jörg}},
  issn         = {{2196-7350}},
  journal      = {{Advanced Materials Interfaces}},
  keywords     = {{Mechanical Engineering, Mechanics of Materials}},
  number       = {{11}},
  publisher    = {{Wiley}},
  title        = {{{Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars}}},
  doi          = {{10.1002/admi.202102159}},
  volume       = {{9}},
  year         = {{2022}},
}

@article{34054,
  abstract     = {{<jats:title>Abstract</jats:title><jats:p>Colloidal nanosphere monolayers—used as a lithography mask for site-controlled material deposition or removal—offer the possibility of cost-effective patterning of large surface areas. In the present study, an automated analysis of scanning electron microscopy (SEM) images is described, which enables the recognition of the individual nanospheres in densely packed monolayers in order to perform a statistical quantification of the sphere size, mask opening size, and sphere-sphere separation distributions. Search algorithms based on Fourier transformation, cross-correlation, multiple-angle intensity profiling, and sphere edge point detection techniques allow for a sphere detection efficiency of at least 99.8%, even in the case of considerable sphere size variations. While the sphere positions and diameters are determined by fitting circles to the spheres edge points, the openings between sphere triples are detected by intensity thresholding. For the analyzed polystyrene sphere monolayers with sphere sizes between 220 and 600 nm and a diameter spread of around 3% coefficients of variation of 6.8–8.1% for the opening size are found. By correlating the mentioned size distributions, it is shown that, in this case, the dominant contribution to the opening size variation stems from nanometer-scale positional variations of the spheres.</jats:p>}},
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  issn         = {{1431-9276}},
  journal      = {{Microscopy and Microanalysis}},
  keywords     = {{Instrumentation}},
  number       = {{1}},
  pages        = {{185--195}},
  publisher    = {{Cambridge University Press (CUP)}},
  title        = {{{Automated SEM Image Analysis of the Sphere Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere Lithography Masks}}},
  doi          = {{10.1017/s1431927621013866}},
  volume       = {{28}},
  year         = {{2021}},
}

@article{34093,
  author       = {{Riedl, Thomas and Kunnathully, V. S. and Trapp, A. and Langer, T. and Reuter, Dirk and Lindner, Jörg}},
  issn         = {{2475-9953}},
  journal      = {{Physical Review Materials}},
  keywords     = {{Physics and Astronomy (miscellaneous), General Materials Science}},
  number       = {{1}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Strain-driven InAs island growth on top of GaAs(111) nanopillars}}},
  doi          = {{10.1103/physrevmaterials.4.014602}},
  volume       = {{4}},
  year         = {{2020}},
}

@article{34088,
  author       = {{Bürger, Julius and Riedl, Thomas and Lindner, Jörg}},
  issn         = {{0304-3991}},
  journal      = {{Ultramicroscopy}},
  keywords     = {{Instrumentation, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  publisher    = {{Elsevier BV}},
  title        = {{{Influence of lens aberrations, specimen thickness and tilt on differential phase contrast STEM images}}},
  doi          = {{10.1016/j.ultramic.2020.113118}},
  volume       = {{219}},
  year         = {{2020}},
}

@article{34091,
  author       = {{Kunnathully, Vinay S. and Riedl, Thomas and Trapp, Alexander and Langer, Timo and Reuter, Dirk and Lindner, Jörg}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  keywords     = {{Materials Chemistry, Inorganic Chemistry, Condensed Matter Physics}},
  publisher    = {{Elsevier BV}},
  title        = {{{InAs heteroepitaxy on nanopillar-patterned GaAs (111)A}}},
  doi          = {{10.1016/j.jcrysgro.2020.125597}},
  volume       = {{537}},
  year         = {{2020}},
}

@article{34090,
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  keywords     = {{Materials Chemistry, Condensed Matter Physics, General Chemistry}},
  publisher    = {{Elsevier BV}},
  title        = {{{Applicability of molecular statics simulation to partial dislocations in GaAs}}},
  doi          = {{10.1016/j.ssc.2020.113927}},
  volume       = {{314-315}},
  year         = {{2020}},
}

@article{34089,
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  keywords     = {{Materials Chemistry, Condensed Matter Physics, General Chemistry}},
  publisher    = {{Elsevier BV}},
  title        = {{{Applicability of molecular statics simulation to partial dislocations in GaAs}}},
  doi          = {{10.1016/j.ssc.2020.113927}},
  volume       = {{314-315}},
  year         = {{2020}},
}

@inproceedings{4412,
  author       = {{Kismann, Michael and Riedl, Thomas and Wu, Xia  and Wagner, Thorsten  and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Photonic crystal properties of Si and SiO2 nanopillar arrays fabricated by nanosphere lithography and metal-assisted wet-chemical etching}}},
  year         = {{2018}},
}

@inproceedings{4413,
  author       = {{Riedl, Thomas and Kunnathully, Vinay and Trapp, Alexander and Reuter, Dirk and Lindner, Jörg}},
  location     = {{Sendai (Japan)}},
  title        = {{{Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars}}},
  year         = {{2018}},
}

@inproceedings{4414,
  author       = {{Riedl, Thomas and Kunnathully, Vinay and Trapp, Alexander and Reuter, Dirk and Lindner, Jörg}},
  location     = {{Sendai (Japan)}},
  title        = {{{MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A }}},
  year         = {{2018}},
}

@article{4415,
  author       = {{Achtstein, Alexander W. and Marquardt, Oliver  and Scott, Riccardo  and Ibrahim, Mohamed  and Riedl, Thomas and Prudnikau, Anatol V. and Antanovich, Artsiom  and Owschimikow, Nina and Lindner, Jörg and Artemyev, Mikhail  and Woggon, Ulrike}},
  journal      = {{accepted 05.09.2018}},
  publisher    = {{ACS Nano}},
  title        = {{{Impact of shell growth on recombination dynamics and exciton-phonon interaction in CdSe-CdS core-shell nanoplatelets}}},
  year         = {{2018}},
}

@inproceedings{4416,
  author       = {{Brassat, Katharina and Riedl, Thomas and Lindner, Jörg}},
  location     = {{Heraklion (Greece)}},
  title        = {{{Self-assembled Surface Patterns for Controlled Nanoparticle Placement and Improved Semiconductor Heteroepitaxy}}},
  year         = {{2018}},
}

@article{4417,
  author       = {{Scott, Riccardo and Prudnikau, Anatol and Antanovich, Artsiom and Christodoulou, Soririos  and Riedl, Thomas and Bertrand, Guilaume and Owschimikow, Nina and Lindner, Jörg and Hens, Zeger and Moreels, Iwan and Artemyev, Mikhail and Woggon, Ulrike and Achtstein, Alexander }},
  journal      = {{submitted to Nano Letters}},
  title        = {{{Exciton-Phonon Interaction in Core-Only, Core-Shell Nanoplatelets and Quantum Dots }}},
  year         = {{2018}},
}

@article{4442,
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  journal      = {{submitted to Phys. Rev. Mat.}},
  title        = {{{Stability of Heteroepitaxial Coherent Growth Modes on Nanowire Radial Surfaces}}},
  year         = {{2018}},
}

@inproceedings{4447,
  author       = {{Riedl, Thomas and Bürger, Julius and Kunnathully, Vinay  and Wiegand, Marie and Duschik, K. and Ramermann, D.  and Ennen, I.  and Hertle, Y.  and Schaper, Mirko and Hellweg, T.  and Hütten, A. and Lindner, Jörg}},
  location     = {{Dortmund (Germany)}},
  title        = {{{Nanostructure Research using Transmission Electron Microscopy at the new OWL Analytic Centre}}},
  year         = {{2018}},
}

@inbook{3950,
  abstract     = {{In the last decade, zinc blende structure III–V semiconductors have been increasingly utilized for the realization of high‐performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III–V devices on the Si platform commonly used for CMOS electronic 
circuits still poses a challenge, due to the large densities of mismatch‐related defects in heteroepitaxial III–V layers grown on planar Si substrates. A promising method to obtain thin III–V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three 
dimensions or confined close to the substrate interface by using aspect‐ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10^5 cm^−2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III–V layers}},
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  booktitle    = {{Nanoscaled Films and Layers}},
  editor       = {{Nanai, L.}},
  isbn         = {{9789535131434}},
  publisher    = {{InTech}},
  title        = {{{Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates}}},
  doi          = {{10.5772/67572}},
  year         = {{2017}},
}

@inproceedings{3954,
  author       = {{Kismann, Michael and Riedl, Thomas and Lindner, Jörg}},
  location     = {{Straßburg (France)}},
  title        = {{{Morphological properties of nanopillar patterned Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical etching}}},
  year         = {{2017}},
}

@inproceedings{3955,
  author       = {{Kunnathully, Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{InAs heteroepitaxy on GaAs patterned by nanosphere lithography}}},
  year         = {{2017}},
}