[{"date_created":"2023-01-04T14:51:51Z","status":"public","publication_status":"published","publication_identifier":{"issn":["0370-1972","1521-3951"]},"keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"15"}],"publication":"physica status solidi (b)","author":[{"last_name":"Meier","first_name":"Falco","full_name":"Meier, Falco"},{"last_name":"Littmann","first_name":"Mario","full_name":"Littmann, Mario"},{"first_name":"Julius","full_name":"Bürger, Julius","last_name":"Bürger","id":"46952"},{"first_name":"Thomas","full_name":"Riedl, Thomas","last_name":"Riedl","id":"36950"},{"last_name":"Kool","id":"44586","first_name":"Daniel","full_name":"Kool, Daniel"},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"As","id":"14","first_name":"Donat Josef","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565"}],"publisher":"Wiley","user_id":"77496","title":"Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks","language":[{"iso":"eng"}],"year":"2022","type":"journal_article","citation":{"short":"F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).","ieee":"F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no. 2200508, 2022, doi: 10.1002/pssb.202200508.","chicago":"Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool, Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” Physica Status Solidi (b), 2022. https://doi.org/10.1002/pssb.202200508.","ama":"Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b). Published online 2022. doi:10.1002/pssb.202200508","apa":"Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter, D., & As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. Physica Status Solidi (b), Article 2200508. https://doi.org/10.1002/pssb.202200508","mla":"Meier, Falco, et al. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” Physica Status Solidi (b), 2200508, Wiley, 2022, doi:10.1002/pssb.202200508.","bibtex":"@article{Meier_Littmann_Bürger_Riedl_Kool_Lindner_Reuter_As_2022, title={Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}, DOI={10.1002/pssb.202200508}, number={2200508}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Falco and Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner, Jörg and Reuter, Dirk and As, Donat Josef}, year={2022} }"},"doi":"10.1002/pssb.202200508","article_number":"2200508","date_updated":"2023-01-04T14:53:24Z","_id":"35232"},{"user_id":"77496","abstract":[{"text":" A process sequence enabling the large-area fabrication of nanopillar-patterned semiconductor templates for selective-area heteroepitaxy is developed. Herein, the nanopillar tops surrounded by a SiNx mask film serve as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such patterned GaAs[Formula: see text]A templates is investigated by means of electron microscopy. It is found that defect-free nanoscale InAs islands grow selectively on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular dark-field scanning transmission electron microscopy imaging reveals that for a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite phase arms extending along the lateral [Formula: see text] directions from the central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed vapor–liquid–solid growth on [Formula: see text] B facets, which leads to a kinetically induced preference for the nucleation of the wurtzite phase driven by the local, instantaneous V/III ratio, and to a concomitant reduction of surface energy of the nanoscale diameter arms. ","lang":"eng"}],"status":"public","date_created":"2022-11-10T14:19:21Z","volume":132,"author":[{"last_name":"Riedl","id":"36950","first_name":"Thomas","full_name":"Riedl, Thomas"},{"last_name":"Kunnathully","first_name":"Vinay S.","full_name":"Kunnathully, Vinay S."},{"full_name":"Verma, Akshay Kumar","first_name":"Akshay Kumar","id":"72998","last_name":"Verma"},{"first_name":"Timo","full_name":"Langer, Timo","last_name":"Langer"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Büker, Björn","first_name":"Björn","last_name":"Büker"},{"last_name":"Hütten","first_name":"Andreas","full_name":"Hütten, Andreas"},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"issue":"18","article_number":"185701","intvolume":" 132","_id":"34056","year":"2022","citation":{"apa":"Riedl, T., Kunnathully, V. S., Verma, A. K., Langer, T., Reuter, D., Büker, B., Hütten, A., & Lindner, J. (2022). Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics, 132(18), Article 185701. https://doi.org/10.1063/5.0121559","ama":"Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics. 2022;132(18). doi:10.1063/5.0121559","chicago":"Riedl, Thomas, Vinay S. Kunnathully, Akshay Kumar Verma, Timo Langer, Dirk Reuter, Björn Büker, Andreas Hütten, and Jörg Lindner. “Selective Area Heteroepitaxy of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics 132, no. 18 (2022). https://doi.org/10.1063/5.0121559.","mla":"Riedl, Thomas, et al. “Selective Area Heteroepitaxy of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics, vol. 132, no. 18, 185701, AIP Publishing, 2022, doi:10.1063/5.0121559.","bibtex":"@article{Riedl_Kunnathully_Verma_Langer_Reuter_Büker_Hütten_Lindner_2022, title={Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A}, volume={132}, DOI={10.1063/5.0121559}, number={18185701}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Riedl, Thomas and Kunnathully, Vinay S. and Verma, Akshay Kumar and Langer, Timo and Reuter, Dirk and Büker, Björn and Hütten, Andreas and Lindner, Jörg}, year={2022} }","short":"T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A. Hütten, J. Lindner, Journal of Applied Physics 132 (2022).","ieee":"T. Riedl et al., “Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A,” Journal of Applied Physics, vol. 132, no. 18, Art. no. 185701, 2022, doi: 10.1063/5.0121559."},"type":"journal_article","title":"Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"doi":"10.1063/5.0121559","date_updated":"2023-01-10T12:08:26Z","language":[{"iso":"eng"}]},{"type":"journal_article","year":"2022","citation":{"chicago":"Riedl, Thomas, Vinay Kunnathully, Alexander Trapp, Timo Langer, Dirk Reuter, and Jörg Lindner. “Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars.” Advanced Materials Interfaces 9, no. 11 (2022). https://doi.org/10.1002/admi.202102159.","ama":"Riedl T, Kunnathully V, Trapp A, Langer T, Reuter D, Lindner J. Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars. Advanced Materials Interfaces. 2022;9(11). doi:10.1002/admi.202102159","apa":"Riedl, T., Kunnathully, V., Trapp, A., Langer, T., Reuter, D., & Lindner, J. (2022). Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars. Advanced Materials Interfaces, 9(11), Article 2102159. https://doi.org/10.1002/admi.202102159","mla":"Riedl, Thomas, et al. “Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars.” Advanced Materials Interfaces, vol. 9, no. 11, 2102159, Wiley, 2022, doi:10.1002/admi.202102159.","bibtex":"@article{Riedl_Kunnathully_Trapp_Langer_Reuter_Lindner_2022, title={Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars}, volume={9}, DOI={10.1002/admi.202102159}, number={112102159}, journal={Advanced Materials Interfaces}, publisher={Wiley}, author={Riedl, Thomas and Kunnathully, Vinay and Trapp, Alexander and Langer, Timo and Reuter, Dirk and Lindner, Jörg}, year={2022} }","short":"T. Riedl, V. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Advanced Materials Interfaces 9 (2022).","ieee":"T. Riedl, V. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars,” Advanced Materials Interfaces, vol. 9, no. 11, Art. no. 2102159, 2022, doi: 10.1002/admi.202102159."},"article_number":"2102159","issue":"11","_id":"34053","intvolume":" 9","volume":9,"date_created":"2022-11-10T14:11:18Z","status":"public","keyword":["Mechanical Engineering","Mechanics of Materials"],"publication":"Advanced Materials Interfaces","author":[{"id":"36950","last_name":"Riedl","full_name":"Riedl, Thomas","first_name":"Thomas"},{"first_name":"Vinay","full_name":"Kunnathully, Vinay","last_name":"Kunnathully"},{"first_name":"Alexander","full_name":"Trapp, Alexander","last_name":"Trapp"},{"last_name":"Langer","full_name":"Langer, Timo","first_name":"Timo"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797","last_name":"Lindner"}],"publisher":"Wiley","user_id":"77496","language":[{"iso":"eng"}],"doi":"10.1002/admi.202102159","date_updated":"2023-01-10T12:09:09Z","publication_status":"published","publication_identifier":{"issn":["2196-7350","2196-7350"]},"department":[{"_id":"15"},{"_id":"230"}],"title":"Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars"},{"title":"Automated SEM Image Analysis of the Sphere Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere Lithography Masks","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["1431-9276","1435-8115"]},"date_updated":"2023-01-10T12:11:24Z","doi":"10.1017/s1431927621013866","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"AbstractColloidal nanosphere monolayers—used as a lithography mask for site-controlled material deposition or removal—offer the possibility of cost-effective patterning of large surface areas. In the present study, an automated analysis of scanning electron microscopy (SEM) images is described, which enables the recognition of the individual nanospheres in densely packed monolayers in order to perform a statistical quantification of the sphere size, mask opening size, and sphere-sphere separation distributions. Search algorithms based on Fourier transformation, cross-correlation, multiple-angle intensity profiling, and sphere edge point detection techniques allow for a sphere detection efficiency of at least 99.8%, even in the case of considerable sphere size variations. While the sphere positions and diameters are determined by fitting circles to the spheres edge points, the openings between sphere triples are detected by intensity thresholding. For the analyzed polystyrene sphere monolayers with sphere sizes between 220 and 600 nm and a diameter spread of around 3% coefficients of variation of 6.8–8.1% for the opening size are found. By correlating the mentioned size distributions, it is shown that, in this case, the dominant contribution to the opening size variation stems from nanometer-scale positional variations of the spheres."}],"user_id":"77496","keyword":["Instrumentation"],"publication":"Microscopy and Microanalysis","author":[{"first_name":"Thomas","full_name":"Riedl, Thomas","last_name":"Riedl","id":"36950"},{"last_name":"Lindner","id":"20797","first_name":"Jörg","full_name":"Lindner, Jörg"}],"publisher":"Cambridge University Press (CUP)","date_created":"2022-11-10T14:13:19Z","status":"public","volume":28,"_id":"34054","intvolume":" 28","issue":"1","page":"185-195","year":"2021","type":"journal_article","citation":{"mla":"Riedl, Thomas, and Jörg Lindner. “Automated SEM Image Analysis of the Sphere Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere Lithography Masks.” Microscopy and Microanalysis, vol. 28, no. 1, Cambridge University Press (CUP), 2021, pp. 185–95, doi:10.1017/s1431927621013866.","bibtex":"@article{Riedl_Lindner_2021, title={Automated SEM Image Analysis of the Sphere Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere Lithography Masks}, volume={28}, DOI={10.1017/s1431927621013866}, number={1}, journal={Microscopy and Microanalysis}, publisher={Cambridge University Press (CUP)}, author={Riedl, Thomas and Lindner, Jörg}, year={2021}, pages={185–195} }","apa":"Riedl, T., & Lindner, J. (2021). Automated SEM Image Analysis of the Sphere Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere Lithography Masks. Microscopy and Microanalysis, 28(1), 185–195. https://doi.org/10.1017/s1431927621013866","ama":"Riedl T, Lindner J. Automated SEM Image Analysis of the Sphere Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere Lithography Masks. Microscopy and Microanalysis. 2021;28(1):185-195. doi:10.1017/s1431927621013866","chicago":"Riedl, Thomas, and Jörg Lindner. “Automated SEM Image Analysis of the Sphere Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere Lithography Masks.” Microscopy and Microanalysis 28, no. 1 (2021): 185–95. https://doi.org/10.1017/s1431927621013866.","ieee":"T. Riedl and J. Lindner, “Automated SEM Image Analysis of the Sphere Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere Lithography Masks,” Microscopy and Microanalysis, vol. 28, no. 1, pp. 185–195, 2021, doi: 10.1017/s1431927621013866.","short":"T. Riedl, J. Lindner, Microscopy and Microanalysis 28 (2021) 185–195."}},{"department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["2475-9953"]},"publication_status":"published","title":"Strain-driven InAs island growth on top of GaAs(111) nanopillars","language":[{"iso":"eng"}],"date_updated":"2023-01-10T12:12:13Z","doi":"10.1103/physrevmaterials.4.014602","publication":"Physical Review Materials","keyword":["Physics and Astronomy (miscellaneous)","General Materials Science"],"author":[{"last_name":"Riedl","id":"36950","first_name":"Thomas","full_name":"Riedl, Thomas"},{"full_name":"Kunnathully, V. S.","first_name":"V. S.","last_name":"Kunnathully"},{"full_name":"Trapp, A.","first_name":"A.","last_name":"Trapp"},{"first_name":"T.","full_name":"Langer, T.","last_name":"Langer"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"id":"20797","last_name":"Lindner","full_name":"Lindner, Jörg","first_name":"Jörg"}],"publisher":"American Physical Society (APS)","volume":4,"date_created":"2022-11-15T14:21:41Z","status":"public","user_id":"77496","type":"journal_article","citation":{"ama":"Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner J. Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials. 2020;4(1). doi:10.1103/physrevmaterials.4.014602","apa":"Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., & Lindner, J. (2020). Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials, 4(1), Article 014602. https://doi.org/10.1103/physrevmaterials.4.014602","chicago":"Riedl, Thomas, V. S. Kunnathully, A. Trapp, T. Langer, Dirk Reuter, and Jörg Lindner. “Strain-Driven InAs Island Growth on Top of GaAs(111) Nanopillars.” Physical Review Materials 4, no. 1 (2020). https://doi.org/10.1103/physrevmaterials.4.014602.","mla":"Riedl, Thomas, et al. “Strain-Driven InAs Island Growth on Top of GaAs(111) Nanopillars.” Physical Review Materials, vol. 4, no. 1, 014602, American Physical Society (APS), 2020, doi:10.1103/physrevmaterials.4.014602.","bibtex":"@article{Riedl_Kunnathully_Trapp_Langer_Reuter_Lindner_2020, title={Strain-driven InAs island growth on top of GaAs(111) nanopillars}, volume={4}, DOI={10.1103/physrevmaterials.4.014602}, number={1014602}, journal={Physical Review Materials}, publisher={American Physical Society (APS)}, author={Riedl, Thomas and Kunnathully, V. S. and Trapp, A. and Langer, T. and Reuter, Dirk and Lindner, Jörg}, year={2020} }","short":"T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Physical Review Materials 4 (2020).","ieee":"T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “Strain-driven InAs island growth on top of GaAs(111) nanopillars,” Physical Review Materials, vol. 4, no. 1, Art. no. 014602, 2020, doi: 10.1103/physrevmaterials.4.014602."},"year":"2020","_id":"34093","intvolume":" 4","article_number":"014602","issue":"1"},{"_id":"34088","intvolume":" 219","article_number":"113118","year":"2020","type":"journal_article","citation":{"short":"J. Bürger, T. Riedl, J. Lindner, Ultramicroscopy 219 (2020).","ieee":"J. Bürger, T. Riedl, and J. Lindner, “Influence of lens aberrations, specimen thickness and tilt on differential phase contrast STEM images,” Ultramicroscopy, vol. 219, Art. no. 113118, 2020, doi: 10.1016/j.ultramic.2020.113118.","apa":"Bürger, J., Riedl, T., & Lindner, J. (2020). Influence of lens aberrations, specimen thickness and tilt on differential phase contrast STEM images. Ultramicroscopy, 219, Article 113118. https://doi.org/10.1016/j.ultramic.2020.113118","ama":"Bürger J, Riedl T, Lindner J. Influence of lens aberrations, specimen thickness and tilt on differential phase contrast STEM images. Ultramicroscopy. 2020;219. doi:10.1016/j.ultramic.2020.113118","chicago":"Bürger, Julius, Thomas Riedl, and Jörg Lindner. “Influence of Lens Aberrations, Specimen Thickness and Tilt on Differential Phase Contrast STEM Images.” Ultramicroscopy 219 (2020). https://doi.org/10.1016/j.ultramic.2020.113118.","mla":"Bürger, Julius, et al. “Influence of Lens Aberrations, Specimen Thickness and Tilt on Differential Phase Contrast STEM Images.” Ultramicroscopy, vol. 219, 113118, Elsevier BV, 2020, doi:10.1016/j.ultramic.2020.113118.","bibtex":"@article{Bürger_Riedl_Lindner_2020, title={Influence of lens aberrations, specimen thickness and tilt on differential phase contrast STEM images}, volume={219}, DOI={10.1016/j.ultramic.2020.113118}, number={113118}, journal={Ultramicroscopy}, publisher={Elsevier BV}, author={Bürger, Julius and Riedl, Thomas and Lindner, Jörg}, year={2020} }"},"user_id":"77496","publication":"Ultramicroscopy","keyword":["Instrumentation","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"author":[{"full_name":"Bürger, Julius","first_name":"Julius","id":"46952","last_name":"Bürger"},{"last_name":"Riedl","id":"36950","first_name":"Thomas","full_name":"Riedl, Thomas"},{"full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797","last_name":"Lindner"}],"publisher":"Elsevier BV","volume":219,"date_created":"2022-11-15T14:15:16Z","status":"public","date_updated":"2023-01-10T12:12:40Z","doi":"10.1016/j.ultramic.2020.113118","language":[{"iso":"eng"}],"title":"Influence of lens aberrations, specimen thickness and tilt on differential phase contrast STEM images","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0304-3991"]},"publication_status":"published"},{"date_updated":"2023-01-10T12:13:05Z","doi":"10.1016/j.jcrysgro.2020.125597","language":[{"iso":"eng"}],"title":"InAs heteroepitaxy on nanopillar-patterned GaAs (111)A","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0022-0248"]},"publication_status":"published","intvolume":" 537","_id":"34091","article_number":"125597","type":"journal_article","year":"2020","citation":{"short":"V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J. Lindner, Journal of Crystal Growth 537 (2020).","ieee":"V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal of Crystal Growth, vol. 537, Art. no. 125597, 2020, doi: 10.1016/j.jcrysgro.2020.125597.","apa":"Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., & Lindner, J. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth, 537, Article 125597. https://doi.org/10.1016/j.jcrysgro.2020.125597","ama":"Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner J. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020;537. doi:10.1016/j.jcrysgro.2020.125597","chicago":"Kunnathully, Vinay S., Thomas Riedl, Alexander Trapp, Timo Langer, Dirk Reuter, and Jörg Lindner. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.” Journal of Crystal Growth 537 (2020). https://doi.org/10.1016/j.jcrysgro.2020.125597.","mla":"Kunnathully, Vinay S., et al. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.” Journal of Crystal Growth, vol. 537, 125597, Elsevier BV, 2020, doi:10.1016/j.jcrysgro.2020.125597.","bibtex":"@article{Kunnathully_Riedl_Trapp_Langer_Reuter_Lindner_2020, title={InAs heteroepitaxy on nanopillar-patterned GaAs (111)A}, volume={537}, DOI={10.1016/j.jcrysgro.2020.125597}, number={125597}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kunnathully, Vinay S. and Riedl, Thomas and Trapp, Alexander and Langer, Timo and Reuter, Dirk and Lindner, Jörg}, year={2020} }"},"user_id":"77496","author":[{"last_name":"Kunnathully","first_name":"Vinay S.","full_name":"Kunnathully, Vinay S."},{"id":"36950","last_name":"Riedl","full_name":"Riedl, Thomas","first_name":"Thomas"},{"full_name":"Trapp, Alexander","first_name":"Alexander","last_name":"Trapp"},{"last_name":"Langer","full_name":"Langer, Timo","first_name":"Timo"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797","last_name":"Lindner"}],"publisher":"Elsevier BV","keyword":["Materials Chemistry","Inorganic Chemistry","Condensed Matter Physics"],"publication":"Journal of Crystal Growth","volume":537,"status":"public","date_created":"2022-11-15T14:19:31Z"},{"article_number":"113927","doi":"10.1016/j.ssc.2020.113927","date_updated":"2023-01-10T12:13:46Z","_id":"34090","language":[{"iso":"eng"}],"type":"journal_article","citation":{"bibtex":"@article{Riedl_Lindner_2020, title={Applicability of molecular statics simulation to partial dislocations in GaAs}, volume={314–315}, DOI={10.1016/j.ssc.2020.113927}, number={113927}, journal={Solid State Communications}, publisher={Elsevier BV}, author={Riedl, Thomas and Lindner, Jörg}, year={2020} }","mla":"Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” Solid State Communications, vol. 314–315, 113927, Elsevier BV, 2020, doi:10.1016/j.ssc.2020.113927.","chicago":"Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” Solid State Communications 314–315 (2020). https://doi.org/10.1016/j.ssc.2020.113927.","ama":"Riedl T, Lindner J. 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InTech, 2017. https://doi.org/10.5772/67572.","mla":"Riedl, Thomas, and Jörg Lindner. “Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates.” Nanoscaled Films and Layers, edited by L. Nanai, InTech, 2017, doi:10.5772/67572.","bibtex":"@inbook{Riedl_Lindner_2017, title={Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates}, DOI={10.5772/67572}, booktitle={Nanoscaled Films and Layers}, publisher={InTech}, author={Riedl, Thomas and Lindner, Jörg}, editor={Nanai, L.Editor}, year={2017} }","short":"T. Riedl, J. Lindner, in: L. Nanai (Ed.), Nanoscaled Films and Layers, InTech, 2017.","ieee":"T. Riedl and J. Lindner, “Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates,” in Nanoscaled Films and Layers, L. Nanai, Ed. InTech, 2017."},"language":[{"iso":"eng"}],"title":"Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates","user_id":"55706","abstract":[{"text":"In the last decade, zinc blende structure III–V semiconductors have been increasingly utilized for the realization of high‐performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III–V devices on the Si platform commonly used for CMOS electronic \r\ncircuits still poses a challenge, due to the large densities of mismatch‐related defects in heteroepitaxial III–V layers grown on planar Si substrates. A promising method to obtain thin III–V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three \r\ndimensions or confined close to the substrate interface by using aspect‐ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10^5 cm^−2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III–V layers","lang":"eng"}],"publication_status":"published","publication_identifier":{"isbn":["9789535131434","9789535131441"]},"editor":[{"full_name":"Nanai, L.","first_name":"L.","last_name":"Nanai"}],"date_created":"2018-08-20T13:09:20Z","status":"public","publication":"Nanoscaled Films and Layers","department":[{"_id":"286"},{"_id":"15"}],"publisher":"InTech","author":[{"full_name":"Riedl, Thomas","first_name":"Thomas","id":"36950","last_name":"Riedl"},{"id":"20797","last_name":"Lindner","full_name":"Lindner, Jörg","first_name":"Jörg"}]},{"title":"Morphological properties of nanopillar patterned Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical etching","user_id":"55706","department":[{"_id":"286"},{"_id":"15"}],"author":[{"last_name":"Kismann","full_name":"Kismann, Michael","first_name":"Michael"},{"last_name":"Riedl","id":"36950","first_name":"Thomas","full_name":"Riedl, Thomas"},{"full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797","last_name":"Lindner"}],"date_created":"2018-08-20T13:28:53Z","status":"public","conference":{"location":"Straßburg (France)","name":"E-MRS Spring Meeting 2017","start_date":"2017-05-22","end_date":"2017-05-26"},"_id":"3954","date_updated":"2022-01-06T06:59:59Z","series_title":"Poster P.9.1","type":"conference","year":"2017","citation":{"chicago":"Kismann, Michael, Thomas Riedl, and Jörg Lindner. “Morphological Properties of Nanopillar Patterned Si Surfaces Obtained by Nanosphere Lithography and Metal-Assisted Wet-Chemical Etching.” Poster P.9.1, 2017.","ama":"Kismann M, Riedl T, Lindner J. Morphological properties of nanopillar patterned Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical etching. 2017.","apa":"Kismann, M., Riedl, T., & Lindner, J. (2017). Morphological properties of nanopillar patterned Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical etching. Presented at the E-MRS Spring Meeting 2017, Straßburg (France).","bibtex":"@article{Kismann_Riedl_Lindner_2017, series={Poster P.9.1}, title={Morphological properties of nanopillar patterned Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical etching}, author={Kismann, Michael and Riedl, Thomas and Lindner, Jörg}, year={2017}, collection={Poster P.9.1} }","mla":"Kismann, Michael, et al. Morphological Properties of Nanopillar Patterned Si Surfaces Obtained by Nanosphere Lithography and Metal-Assisted Wet-Chemical Etching. 2017.","short":"M. Kismann, T. Riedl, J. Lindner, (2017).","ieee":"M. Kismann, T. Riedl, and J. Lindner, “Morphological properties of nanopillar patterned Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical etching.” 2017."}},{"user_id":"55706","title":"InAs heteroepitaxy on GaAs patterned by nanosphere lithography","status":"public","date_created":"2018-08-20T13:31:50Z","author":[{"last_name":"Kunnathully","first_name":"Vinay","full_name":"Kunnathully, Vinay"},{"full_name":"Riedl, Thomas","first_name":"Thomas","id":"36950","last_name":"Riedl"},{"full_name":"Karlisch, A.","first_name":"A.","last_name":"Karlisch"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"id":"20797","last_name":"Lindner","full_name":"Lindner, Jörg","first_name":"Jörg"}],"department":[{"_id":"286"},{"_id":"292"},{"_id":"15"}],"date_updated":"2022-01-06T06:59:59Z","_id":"3955","conference":{"location":"Warsaw (Poland)","start_date":"2017-09-18","name":"E-MRS Fall Meeting 2017","end_date":"2017-09-21"},"citation":{"short":"V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, J. Lindner, in: 2017.","ieee":"V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, and J. Lindner, “InAs heteroepitaxy on GaAs patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaw (Poland), 2017.","chicago":"Kunnathully, Vinay, Thomas Riedl, A. Karlisch, Dirk Reuter, and Jörg Lindner. “InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography,” 2017.","apa":"Kunnathully, V., Riedl, T., Karlisch, A., Reuter, D., & Lindner, J. (2017). InAs heteroepitaxy on GaAs patterned by nanosphere lithography. Presented at the E-MRS Fall Meeting 2017, Warsaw (Poland).","ama":"Kunnathully V, Riedl T, Karlisch A, Reuter D, Lindner J. InAs heteroepitaxy on GaAs patterned by nanosphere lithography. In: ; 2017.","bibtex":"@inproceedings{Kunnathully_Riedl_Karlisch_Reuter_Lindner_2017, title={InAs heteroepitaxy on GaAs patterned by nanosphere lithography}, author={Kunnathully, Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}, year={2017} }","mla":"Kunnathully, Vinay, et al. InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography. 2017."},"year":"2017","type":"conference"}]