---
_id: '35232'
article_number: '2200508'
author:
- first_name: Falco
full_name: Meier, Falco
last_name: Meier
- first_name: Mario
full_name: Littmann, Mario
last_name: Littmann
- first_name: Julius
full_name: Bürger, Julius
id: '46952'
last_name: Bürger
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Daniel
full_name: Kool, Daniel
id: '44586'
last_name: Kool
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium
Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b).
Published online 2022. doi:10.1002/pssb.202200508
apa: Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter,
D., & As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in
Nanoscopic Silicon Dioxide Masks. Physica Status Solidi (b), Article 2200508.
https://doi.org/10.1002/pssb.202200508
bibtex: '@article{Meier_Littmann_Bürger_Riedl_Kool_Lindner_Reuter_As_2022, title={Selective
Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}, DOI={10.1002/pssb.202200508}, number={2200508},
journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Falco and
Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner,
Jörg and Reuter, Dirk and As, Donat Josef}, year={2022} }'
chicago: Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool,
Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic
Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” Physica Status Solidi
(b), 2022. https://doi.org/10.1002/pssb.202200508.
ieee: 'F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in
Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no.
2200508, 2022, doi: 10.1002/pssb.202200508.'
mla: Meier, Falco, et al. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic
Silicon Dioxide Masks.” Physica Status Solidi (b), 2200508, Wiley, 2022,
doi:10.1002/pssb.202200508.
short: F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter,
D.J. As, Physica Status Solidi (b) (2022).
date_created: 2023-01-04T14:51:51Z
date_updated: 2023-01-04T14:53:24Z
department:
- _id: '15'
doi: 10.1002/pssb.202200508
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide
Masks
type: journal_article
user_id: '77496'
year: '2022'
...
---
_id: '34056'
abstract:
- lang: eng
text: ' A process sequence enabling the large-area fabrication of nanopillar-patterned
semiconductor templates for selective-area heteroepitaxy is developed. Herein,
the nanopillar tops surrounded by a SiNx mask film serve
as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such
patterned GaAs[Formula: see text]A templates is investigated by means of electron
microscopy. It is found that defect-free nanoscale InAs islands grow selectively
on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular
dark-field scanning transmission electron microscopy imaging reveals that for
a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite
phase arms extending along the lateral [Formula: see text] directions from the
central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed
vapor–liquid–solid growth on [Formula: see text] B facets, which leads to a kinetically
induced preference for the nucleation of the wurtzite phase driven by the local,
instantaneous V/III ratio, and to a concomitant reduction of surface energy of
the nanoscale diameter arms. '
article_number: '185701'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Vinay S.
full_name: Kunnathully, Vinay S.
last_name: Kunnathully
- first_name: Akshay Kumar
full_name: Verma, Akshay Kumar
id: '72998'
last_name: Verma
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Björn
full_name: Büker, Björn
last_name: Büker
- first_name: Andreas
full_name: Hütten, Andreas
last_name: Hütten
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs
nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics.
2022;132(18). doi:10.1063/5.0121559
apa: Riedl, T., Kunnathully, V. S., Verma, A. K., Langer, T., Reuter, D., Büker,
B., Hütten, A., & Lindner, J. (2022). Selective area heteroepitaxy of InAs
nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics,
132(18), Article 185701. https://doi.org/10.1063/5.0121559
bibtex: '@article{Riedl_Kunnathully_Verma_Langer_Reuter_Büker_Hütten_Lindner_2022,
title={Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned
GaAs(111)A}, volume={132}, DOI={10.1063/5.0121559},
number={18185701}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Riedl, Thomas and Kunnathully, Vinay S. and Verma, Akshay Kumar and Langer,
Timo and Reuter, Dirk and Büker, Björn and Hütten, Andreas and Lindner, Jörg},
year={2022} }'
chicago: Riedl, Thomas, Vinay S. Kunnathully, Akshay Kumar Verma, Timo Langer, Dirk
Reuter, Björn Büker, Andreas Hütten, and Jörg Lindner. “Selective Area Heteroepitaxy
of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied
Physics 132, no. 18 (2022). https://doi.org/10.1063/5.0121559.
ieee: 'T. Riedl et al., “Selective area heteroepitaxy of InAs nanostructures
on nanopillar-patterned GaAs(111)A,” Journal of Applied Physics, vol. 132,
no. 18, Art. no. 185701, 2022, doi: 10.1063/5.0121559.'
mla: Riedl, Thomas, et al. “Selective Area Heteroepitaxy of InAs Nanostructures
on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics, vol. 132,
no. 18, 185701, AIP Publishing, 2022, doi:10.1063/5.0121559.
short: T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A.
Hütten, J. Lindner, Journal of Applied Physics 132 (2022).
date_created: 2022-11-10T14:19:21Z
date_updated: 2023-01-10T12:08:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0121559
intvolume: ' 132'
issue: '18'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned
GaAs(111)A
type: journal_article
user_id: '77496'
volume: 132
year: '2022'
...
---
_id: '34053'
article_number: '2102159'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Vinay
full_name: Kunnathully, Vinay
last_name: Kunnathully
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Kunnathully V, Trapp A, Langer T, Reuter D, Lindner J. Size‐Dependent
Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars. Advanced
Materials Interfaces. 2022;9(11). doi:10.1002/admi.202102159
apa: Riedl, T., Kunnathully, V., Trapp, A., Langer, T., Reuter, D., & Lindner,
J. (2022). Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A
Nanopillars. Advanced Materials Interfaces, 9(11), Article 2102159.
https://doi.org/10.1002/admi.202102159
bibtex: '@article{Riedl_Kunnathully_Trapp_Langer_Reuter_Lindner_2022, title={Size‐Dependent
Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars}, volume={9},
DOI={10.1002/admi.202102159},
number={112102159}, journal={Advanced Materials Interfaces}, publisher={Wiley},
author={Riedl, Thomas and Kunnathully, Vinay and Trapp, Alexander and Langer,
Timo and Reuter, Dirk and Lindner, Jörg}, year={2022} }'
chicago: Riedl, Thomas, Vinay Kunnathully, Alexander Trapp, Timo Langer, Dirk Reuter,
and Jörg Lindner. “Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top
of GaAs(111)A Nanopillars.” Advanced Materials Interfaces 9, no. 11 (2022).
https://doi.org/10.1002/admi.202102159.
ieee: 'T. Riedl, V. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. Lindner,
“Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars,”
Advanced Materials Interfaces, vol. 9, no. 11, Art. no. 2102159, 2022,
doi: 10.1002/admi.202102159.'
mla: Riedl, Thomas, et al. “Size‐Dependent Strain Relaxation in InAs Quantum Dots
on Top of GaAs(111)A Nanopillars.” Advanced Materials Interfaces, vol.
9, no. 11, 2102159, Wiley, 2022, doi:10.1002/admi.202102159.
short: T. Riedl, V. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Advanced
Materials Interfaces 9 (2022).
date_created: 2022-11-10T14:11:18Z
date_updated: 2023-01-10T12:09:09Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/admi.202102159
intvolume: ' 9'
issue: '11'
keyword:
- Mechanical Engineering
- Mechanics of Materials
language:
- iso: eng
publication: Advanced Materials Interfaces
publication_identifier:
issn:
- 2196-7350
- 2196-7350
publication_status: published
publisher: Wiley
status: public
title: Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A
Nanopillars
type: journal_article
user_id: '77496'
volume: 9
year: '2022'
...
---
_id: '34054'
abstract:
- lang: eng
text: AbstractColloidal nanosphere monolayers—used
as a lithography mask for site-controlled material deposition or removal—offer
the possibility of cost-effective patterning of large surface areas. In the present
study, an automated analysis of scanning electron microscopy (SEM) images is described,
which enables the recognition of the individual nanospheres in densely packed
monolayers in order to perform a statistical quantification of the sphere size,
mask opening size, and sphere-sphere separation distributions. Search algorithms
based on Fourier transformation, cross-correlation, multiple-angle intensity profiling,
and sphere edge point detection techniques allow for a sphere detection efficiency
of at least 99.8%, even in the case of considerable sphere size variations. While
the sphere positions and diameters are determined by fitting circles to the spheres
edge points, the openings between sphere triples are detected by intensity thresholding.
For the analyzed polystyrene sphere monolayers with sphere sizes between 220 and
600 nm and a diameter spread of around 3% coefficients of variation of 6.8–8.1%
for the opening size are found. By correlating the mentioned size distributions,
it is shown that, in this case, the dominant contribution to the opening size
variation stems from nanometer-scale positional variations of the spheres.
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Lindner J. Automated SEM Image Analysis of the Sphere Diameter, Sphere-Sphere
Separation, and Opening Size Distributions of Nanosphere Lithography Masks. Microscopy
and Microanalysis. 2021;28(1):185-195. doi:10.1017/s1431927621013866
apa: Riedl, T., & Lindner, J. (2021). Automated SEM Image Analysis of the Sphere
Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere
Lithography Masks. Microscopy and Microanalysis, 28(1), 185–195.
https://doi.org/10.1017/s1431927621013866
bibtex: '@article{Riedl_Lindner_2021, title={Automated SEM Image Analysis of the
Sphere Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere
Lithography Masks}, volume={28}, DOI={10.1017/s1431927621013866},
number={1}, journal={Microscopy and Microanalysis}, publisher={Cambridge University
Press (CUP)}, author={Riedl, Thomas and Lindner, Jörg}, year={2021}, pages={185–195}
}'
chicago: 'Riedl, Thomas, and Jörg Lindner. “Automated SEM Image Analysis of the
Sphere Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere
Lithography Masks.” Microscopy and Microanalysis 28, no. 1 (2021): 185–95.
https://doi.org/10.1017/s1431927621013866.'
ieee: 'T. Riedl and J. Lindner, “Automated SEM Image Analysis of the Sphere Diameter,
Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere Lithography
Masks,” Microscopy and Microanalysis, vol. 28, no. 1, pp. 185–195, 2021,
doi: 10.1017/s1431927621013866.'
mla: Riedl, Thomas, and Jörg Lindner. “Automated SEM Image Analysis of the Sphere
Diameter, Sphere-Sphere Separation, and Opening Size Distributions of Nanosphere
Lithography Masks.” Microscopy and Microanalysis, vol. 28, no. 1, Cambridge
University Press (CUP), 2021, pp. 185–95, doi:10.1017/s1431927621013866.
short: T. Riedl, J. Lindner, Microscopy and Microanalysis 28 (2021) 185–195.
date_created: 2022-11-10T14:13:19Z
date_updated: 2023-01-10T12:11:24Z
department:
- _id: '15'
- _id: '230'
doi: 10.1017/s1431927621013866
intvolume: ' 28'
issue: '1'
keyword:
- Instrumentation
language:
- iso: eng
page: 185-195
publication: Microscopy and Microanalysis
publication_identifier:
issn:
- 1431-9276
- 1435-8115
publication_status: published
publisher: Cambridge University Press (CUP)
status: public
title: Automated SEM Image Analysis of the Sphere Diameter, Sphere-Sphere Separation,
and Opening Size Distributions of Nanosphere Lithography Masks
type: journal_article
user_id: '77496'
volume: 28
year: '2021'
...
---
_id: '34093'
article_number: '014602'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: V. S.
full_name: Kunnathully, V. S.
last_name: Kunnathully
- first_name: A.
full_name: Trapp, A.
last_name: Trapp
- first_name: T.
full_name: Langer, T.
last_name: Langer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner J. Strain-driven
InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials.
2020;4(1). doi:10.1103/physrevmaterials.4.014602
apa: Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., & Lindner,
J. (2020). Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical
Review Materials, 4(1), Article 014602. https://doi.org/10.1103/physrevmaterials.4.014602
bibtex: '@article{Riedl_Kunnathully_Trapp_Langer_Reuter_Lindner_2020, title={Strain-driven
InAs island growth on top of GaAs(111) nanopillars}, volume={4}, DOI={10.1103/physrevmaterials.4.014602},
number={1014602}, journal={Physical Review Materials}, publisher={American Physical
Society (APS)}, author={Riedl, Thomas and Kunnathully, V. S. and Trapp, A. and
Langer, T. and Reuter, Dirk and Lindner, Jörg}, year={2020} }'
chicago: Riedl, Thomas, V. S. Kunnathully, A. Trapp, T. Langer, Dirk Reuter, and
Jörg Lindner. “Strain-Driven InAs Island Growth on Top of GaAs(111) Nanopillars.”
Physical Review Materials 4, no. 1 (2020). https://doi.org/10.1103/physrevmaterials.4.014602.
ieee: 'T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. Lindner,
“Strain-driven InAs island growth on top of GaAs(111) nanopillars,” Physical
Review Materials, vol. 4, no. 1, Art. no. 014602, 2020, doi: 10.1103/physrevmaterials.4.014602.'
mla: Riedl, Thomas, et al. “Strain-Driven InAs Island Growth on Top of GaAs(111)
Nanopillars.” Physical Review Materials, vol. 4, no. 1, 014602, American
Physical Society (APS), 2020, doi:10.1103/physrevmaterials.4.014602.
short: T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Physical
Review Materials 4 (2020).
date_created: 2022-11-15T14:21:41Z
date_updated: 2023-01-10T12:12:13Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevmaterials.4.014602
intvolume: ' 4'
issue: '1'
keyword:
- Physics and Astronomy (miscellaneous)
- General Materials Science
language:
- iso: eng
publication: Physical Review Materials
publication_identifier:
issn:
- 2475-9953
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Strain-driven InAs island growth on top of GaAs(111) nanopillars
type: journal_article
user_id: '77496'
volume: 4
year: '2020'
...
---
_id: '34088'
article_number: '113118'
author:
- first_name: Julius
full_name: Bürger, Julius
id: '46952'
last_name: Bürger
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Bürger J, Riedl T, Lindner J. Influence of lens aberrations, specimen thickness
and tilt on differential phase contrast STEM images. Ultramicroscopy. 2020;219.
doi:10.1016/j.ultramic.2020.113118
apa: Bürger, J., Riedl, T., & Lindner, J. (2020). Influence of lens aberrations,
specimen thickness and tilt on differential phase contrast STEM images. Ultramicroscopy,
219, Article 113118. https://doi.org/10.1016/j.ultramic.2020.113118
bibtex: '@article{Bürger_Riedl_Lindner_2020, title={Influence of lens aberrations,
specimen thickness and tilt on differential phase contrast STEM images}, volume={219},
DOI={10.1016/j.ultramic.2020.113118},
number={113118}, journal={Ultramicroscopy}, publisher={Elsevier BV}, author={Bürger,
Julius and Riedl, Thomas and Lindner, Jörg}, year={2020} }'
chicago: Bürger, Julius, Thomas Riedl, and Jörg Lindner. “Influence of Lens Aberrations,
Specimen Thickness and Tilt on Differential Phase Contrast STEM Images.” Ultramicroscopy
219 (2020). https://doi.org/10.1016/j.ultramic.2020.113118.
ieee: 'J. Bürger, T. Riedl, and J. Lindner, “Influence of lens aberrations, specimen
thickness and tilt on differential phase contrast STEM images,” Ultramicroscopy,
vol. 219, Art. no. 113118, 2020, doi: 10.1016/j.ultramic.2020.113118.'
mla: Bürger, Julius, et al. “Influence of Lens Aberrations, Specimen Thickness and
Tilt on Differential Phase Contrast STEM Images.” Ultramicroscopy, vol.
219, 113118, Elsevier BV, 2020, doi:10.1016/j.ultramic.2020.113118.
short: J. Bürger, T. Riedl, J. Lindner, Ultramicroscopy 219 (2020).
date_created: 2022-11-15T14:15:16Z
date_updated: 2023-01-10T12:12:40Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.ultramic.2020.113118
intvolume: ' 219'
keyword:
- Instrumentation
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: Ultramicroscopy
publication_identifier:
issn:
- 0304-3991
publication_status: published
publisher: Elsevier BV
status: public
title: Influence of lens aberrations, specimen thickness and tilt on differential
phase contrast STEM images
type: journal_article
user_id: '77496'
volume: 219
year: '2020'
...
---
_id: '34091'
article_number: '125597'
author:
- first_name: Vinay S.
full_name: Kunnathully, Vinay S.
last_name: Kunnathully
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner J. InAs heteroepitaxy
on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020;537.
doi:10.1016/j.jcrysgro.2020.125597
apa: Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., & Lindner,
J. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal
of Crystal Growth, 537, Article 125597. https://doi.org/10.1016/j.jcrysgro.2020.125597
bibtex: '@article{Kunnathully_Riedl_Trapp_Langer_Reuter_Lindner_2020, title={InAs
heteroepitaxy on nanopillar-patterned GaAs (111)A}, volume={537}, DOI={10.1016/j.jcrysgro.2020.125597},
number={125597}, journal={Journal of Crystal Growth}, publisher={Elsevier BV},
author={Kunnathully, Vinay S. and Riedl, Thomas and Trapp, Alexander and Langer,
Timo and Reuter, Dirk and Lindner, Jörg}, year={2020} }'
chicago: Kunnathully, Vinay S., Thomas Riedl, Alexander Trapp, Timo Langer, Dirk
Reuter, and Jörg Lindner. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.”
Journal of Crystal Growth 537 (2020). https://doi.org/10.1016/j.jcrysgro.2020.125597.
ieee: 'V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. Lindner,
“InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal of Crystal
Growth, vol. 537, Art. no. 125597, 2020, doi: 10.1016/j.jcrysgro.2020.125597.'
mla: Kunnathully, Vinay S., et al. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs
(111)A.” Journal of Crystal Growth, vol. 537, 125597, Elsevier BV, 2020,
doi:10.1016/j.jcrysgro.2020.125597.
short: V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J. Lindner, Journal
of Crystal Growth 537 (2020).
date_created: 2022-11-15T14:19:31Z
date_updated: 2023-01-10T12:13:05Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2020.125597
intvolume: ' 537'
keyword:
- Materials Chemistry
- Inorganic Chemistry
- Condensed Matter Physics
language:
- iso: eng
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
type: journal_article
user_id: '77496'
volume: 537
year: '2020'
...
---
_id: '34090'
article_number: '113927'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Lindner J. Applicability of molecular statics simulation to partial
dislocations in GaAs. Solid State Communications. 2020;314-315. doi:10.1016/j.ssc.2020.113927
apa: Riedl, T., & Lindner, J. (2020). Applicability of molecular statics simulation
to partial dislocations in GaAs. Solid State Communications, 314–315,
Article 113927. https://doi.org/10.1016/j.ssc.2020.113927
bibtex: '@article{Riedl_Lindner_2020, title={Applicability of molecular statics
simulation to partial dislocations in GaAs}, volume={314–315}, DOI={10.1016/j.ssc.2020.113927},
number={113927}, journal={Solid State Communications}, publisher={Elsevier BV},
author={Riedl, Thomas and Lindner, Jörg}, year={2020} }'
chicago: Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation
to Partial Dislocations in GaAs.” Solid State Communications 314–315 (2020).
https://doi.org/10.1016/j.ssc.2020.113927.
ieee: 'T. Riedl and J. Lindner, “Applicability of molecular statics simulation to
partial dislocations in GaAs,” Solid State Communications, vol. 314–315,
Art. no. 113927, 2020, doi: 10.1016/j.ssc.2020.113927.'
mla: Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation
to Partial Dislocations in GaAs.” Solid State Communications, vol. 314–315,
113927, Elsevier BV, 2020, doi:10.1016/j.ssc.2020.113927.
short: T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).
date_created: 2022-11-15T14:18:42Z
date_updated: 2023-01-10T12:13:46Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.ssc.2020.113927
keyword:
- Materials Chemistry
- Condensed Matter Physics
- General Chemistry
language:
- iso: eng
publication: Solid State Communications
publication_identifier:
issn:
- 0038-1098
publication_status: published
publisher: Elsevier BV
status: public
title: Applicability of molecular statics simulation to partial dislocations in GaAs
type: journal_article
user_id: '77496'
volume: 314-315
year: '2020'
...
---
_id: '34089'
article_number: '113927'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Lindner J. Applicability of molecular statics simulation to partial
dislocations in GaAs. Solid State Communications. 2020;314-315. doi:10.1016/j.ssc.2020.113927
apa: Riedl, T., & Lindner, J. (2020). Applicability of molecular statics simulation
to partial dislocations in GaAs. Solid State Communications, 314–315,
Article 113927. https://doi.org/10.1016/j.ssc.2020.113927
bibtex: '@article{Riedl_Lindner_2020, title={Applicability of molecular statics
simulation to partial dislocations in GaAs}, volume={314–315}, DOI={10.1016/j.ssc.2020.113927},
number={113927}, journal={Solid State Communications}, publisher={Elsevier BV},
author={Riedl, Thomas and Lindner, Jörg}, year={2020} }'
chicago: Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation
to Partial Dislocations in GaAs.” Solid State Communications 314–315 (2020).
https://doi.org/10.1016/j.ssc.2020.113927.
ieee: 'T. Riedl and J. Lindner, “Applicability of molecular statics simulation to
partial dislocations in GaAs,” Solid State Communications, vol. 314–315,
Art. no. 113927, 2020, doi: 10.1016/j.ssc.2020.113927.'
mla: Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation
to Partial Dislocations in GaAs.” Solid State Communications, vol. 314–315,
113927, Elsevier BV, 2020, doi:10.1016/j.ssc.2020.113927.
short: T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).
date_created: 2022-11-15T14:17:36Z
date_updated: 2023-01-10T12:13:23Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.ssc.2020.113927
keyword:
- Materials Chemistry
- Condensed Matter Physics
- General Chemistry
language:
- iso: eng
publication: Solid State Communications
publication_identifier:
issn:
- 0038-1098
publication_status: published
publisher: Elsevier BV
status: public
title: Applicability of molecular statics simulation to partial dislocations in GaAs
type: journal_article
user_id: '77496'
volume: 314-315
year: '2020'
...
---
_id: '4412'
author:
- first_name: Michael
full_name: Kismann, Michael
last_name: Kismann
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: 'Xia '
full_name: 'Wu, Xia '
last_name: Wu
- first_name: 'Thorsten '
full_name: 'Wagner, Thorsten '
last_name: Wagner
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Kismann M, Riedl T, Wu X, Wagner T, Lindner J. Photonic crystal properties
of Si and SiO2 nanopillar arrays fabricated by nanosphere lithography and metal-assisted
wet-chemical etching. In: ; 2018.'
apa: Kismann, M., Riedl, T., Wu, X., Wagner, T., & Lindner, J. (2018). Photonic
crystal properties of Si and SiO2 nanopillar arrays fabricated by nanosphere lithography
and metal-assisted wet-chemical etching. Presented at the EMRS-Fall Meeting 2018,
Warsaw (Poland).
bibtex: '@inproceedings{Kismann_Riedl_Wu_Wagner_Lindner_2018, title={Photonic crystal
properties of Si and SiO2 nanopillar arrays fabricated by nanosphere lithography
and metal-assisted wet-chemical etching}, author={Kismann, Michael and Riedl,
Thomas and Wu, Xia and Wagner, Thorsten and Lindner, Jörg}, year={2018} }'
chicago: Kismann, Michael, Thomas Riedl, Xia Wu, Thorsten Wagner, and Jörg Lindner.
“Photonic Crystal Properties of Si and SiO2 Nanopillar Arrays Fabricated by Nanosphere
Lithography and Metal-Assisted Wet-Chemical Etching,” 2018.
ieee: M. Kismann, T. Riedl, X. Wu, T. Wagner, and J. Lindner, “Photonic crystal
properties of Si and SiO2 nanopillar arrays fabricated by nanosphere lithography
and metal-assisted wet-chemical etching,” presented at the EMRS-Fall Meeting 2018,
Warsaw (Poland), 2018.
mla: Kismann, Michael, et al. Photonic Crystal Properties of Si and SiO2 Nanopillar
Arrays Fabricated by Nanosphere Lithography and Metal-Assisted Wet-Chemical Etching.
2018.
short: 'M. Kismann, T. Riedl, X. Wu, T. Wagner, J. Lindner, in: 2018.'
conference:
end_date: 2018-09-20
location: Warsaw (Poland)
name: EMRS-Fall Meeting 2018
start_date: 2018-09-17
date_created: 2018-09-17T13:12:03Z
date_updated: 2022-01-06T07:01:02Z
department:
- _id: '286'
language:
- iso: eng
status: public
title: Photonic crystal properties of Si and SiO2 nanopillar arrays fabricated by
nanosphere lithography and metal-assisted wet-chemical etching
type: conference
user_id: '55706'
year: '2018'
...
---
_id: '4413'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Vinay
full_name: Kunnathully, Vinay
last_name: Kunnathully
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Riedl T, Kunnathully V, Trapp A, Reuter D, Lindner J. Strain Relaxation in
InAs Nanoislands on top of GaAs (111) A Nanopillars. In: ; 2018.'
apa: Riedl, T., Kunnathully, V., Trapp, A., Reuter, D., & Lindner, J. (2018).
Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars. Presented
at the 14th International Conference on Atomically Controlles Surfaces, Interfaces
and Nanostructures (ACSIN-14), Sendai (Japan).
bibtex: '@inproceedings{Riedl_Kunnathully_Trapp_Reuter_Lindner_2018, title={Strain
Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars}, author={Riedl,
Thomas and Kunnathully, Vinay and Trapp, Alexander and Reuter, Dirk and Lindner,
Jörg}, year={2018} }'
chicago: Riedl, Thomas, Vinay Kunnathully, Alexander Trapp, Dirk Reuter, and Jörg
Lindner. “Strain Relaxation in InAs Nanoislands on Top of GaAs (111) A Nanopillars,”
2018.
ieee: T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “Strain Relaxation
in InAs Nanoislands on top of GaAs (111) A Nanopillars,” presented at the 14th
International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures
(ACSIN-14), Sendai (Japan), 2018.
mla: Riedl, Thomas, et al. Strain Relaxation in InAs Nanoislands on Top of GaAs
(111) A Nanopillars. 2018.
short: 'T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.'
conference:
end_date: 2018-10-25
location: Sendai (Japan)
name: 14th International Conference on Atomically Controlles Surfaces, Interfaces
and Nanostructures (ACSIN-14)
start_date: 2018-10-21
date_created: 2018-09-17T13:15:55Z
date_updated: 2022-01-06T07:01:02Z
department:
- _id: '286'
- _id: '292'
language:
- iso: eng
status: public
title: Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars
type: conference
user_id: '55706'
year: '2018'
...
---
_id: '4414'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Vinay
full_name: Kunnathully, Vinay
last_name: Kunnathully
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Riedl T, Kunnathully V, Trapp A, Reuter D, Lindner J. MBE Growth of InAs on
Nanopillar-Patterned GaAs (111) A . In: ; 2018.'
apa: Riedl, T., Kunnathully, V., Trapp, A., Reuter, D., & Lindner, J. (2018).
MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A . Presented at the 14th
International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures
(ACSIN-14), Sendai (Japan).
bibtex: '@inproceedings{Riedl_Kunnathully_Trapp_Reuter_Lindner_2018, title={MBE
Growth of InAs on Nanopillar-Patterned GaAs (111) A }, author={Riedl, Thomas and
Kunnathully, Vinay and Trapp, Alexander and Reuter, Dirk and Lindner, Jörg}, year={2018}
}'
chicago: Riedl, Thomas, Vinay Kunnathully, Alexander Trapp, Dirk Reuter, and Jörg
Lindner. “MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A ,” 2018.
ieee: T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “MBE Growth
of InAs on Nanopillar-Patterned GaAs (111) A ,” presented at the 14th International
Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14),
Sendai (Japan), 2018.
mla: Riedl, Thomas, et al. MBE Growth of InAs on Nanopillar-Patterned GaAs (111)
A . 2018.
short: 'T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.'
conference:
end_date: 2018-10-25
location: Sendai (Japan)
name: 14th International Conference on Atomically Controlles Surfaces, Interfaces
and Nanostructures (ACSIN-14)
start_date: 2018-10-21
date_created: 2018-09-17T13:20:48Z
date_updated: 2022-01-06T07:01:02Z
department:
- _id: '286'
- _id: '292'
language:
- iso: eng
status: public
title: 'MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A '
type: conference
user_id: '55706'
year: '2018'
...
---
_id: '4415'
author:
- first_name: Alexander W.
full_name: Achtstein, Alexander W.
last_name: Achtstein
- first_name: 'Oliver '
full_name: 'Marquardt, Oliver '
last_name: Marquardt
- first_name: 'Riccardo '
full_name: 'Scott, Riccardo '
last_name: Scott
- first_name: 'Mohamed '
full_name: 'Ibrahim, Mohamed '
last_name: Ibrahim
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Anatol V.
full_name: Prudnikau, Anatol V.
last_name: Prudnikau
- first_name: 'Artsiom '
full_name: 'Antanovich, Artsiom '
last_name: Antanovich
- first_name: Nina
full_name: Owschimikow, Nina
last_name: Owschimikow
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: 'Mikhail '
full_name: 'Artemyev, Mikhail '
last_name: Artemyev
- first_name: Ulrike
full_name: Woggon, Ulrike
last_name: Woggon
citation:
ama: Achtstein AW, Marquardt O, Scott R, et al. Impact of shell growth on recombination
dynamics and exciton-phonon interaction in CdSe-CdS core-shell nanoplatelets.
accepted 05092018.
apa: Achtstein, A. W., Marquardt, O., Scott, R., Ibrahim, M., Riedl, T., Prudnikau,
A. V., … Woggon, U. (n.d.). Impact of shell growth on recombination dynamics and
exciton-phonon interaction in CdSe-CdS core-shell nanoplatelets. Accepted 05.09.2018.
bibtex: '@article{Achtstein_Marquardt_Scott_Ibrahim_Riedl_Prudnikau_Antanovich_Owschimikow_Lindner_Artemyev_et
al., title={Impact of shell growth on recombination dynamics and exciton-phonon
interaction in CdSe-CdS core-shell nanoplatelets}, journal={accepted 05.09.2018},
publisher={ACS Nano}, author={Achtstein, Alexander W. and Marquardt, Oliver and
Scott, Riccardo and Ibrahim, Mohamed and Riedl, Thomas and Prudnikau, Anatol
V. and Antanovich, Artsiom and Owschimikow, Nina and Lindner, Jörg and Artemyev,
Mikhail and et al.} }'
chicago: Achtstein, Alexander W., Oliver Marquardt, Riccardo Scott, Mohamed Ibrahim,
Thomas Riedl, Anatol V. Prudnikau, Artsiom Antanovich, et al. “Impact of Shell
Growth on Recombination Dynamics and Exciton-Phonon Interaction in CdSe-CdS Core-Shell
Nanoplatelets.” Accepted 05.09.2018, n.d.
ieee: A. W. Achtstein et al., “Impact of shell growth on recombination dynamics
and exciton-phonon interaction in CdSe-CdS core-shell nanoplatelets,” accepted
05.09.2018.
mla: Achtstein, Alexander W., et al. “Impact of Shell Growth on Recombination Dynamics
and Exciton-Phonon Interaction in CdSe-CdS Core-Shell Nanoplatelets.” Accepted
05.09.2018, ACS Nano.
short: A.W. Achtstein, O. Marquardt, R. Scott, M. Ibrahim, T. Riedl, A.V. Prudnikau,
A. Antanovich, N. Owschimikow, J. Lindner, M. Artemyev, U. Woggon, Accepted 05.09.2018
(n.d.).
date_created: 2018-09-17T13:26:33Z
date_updated: 2022-01-06T07:01:02Z
department:
- _id: '286'
language:
- iso: eng
publication: accepted 05.09.2018
publication_status: accepted
publisher: ACS Nano
status: public
title: Impact of shell growth on recombination dynamics and exciton-phonon interaction
in CdSe-CdS core-shell nanoplatelets
type: journal_article
user_id: '55706'
year: '2018'
...
---
_id: '4416'
author:
- first_name: Katharina
full_name: Brassat, Katharina
id: '11305'
last_name: Brassat
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Brassat K, Riedl T, Lindner J. Self-assembled Surface Patterns for Controlled
Nanoparticle Placement and Improved Semiconductor Heteroepitaxy. In: ; 2018.'
apa: Brassat, K., Riedl, T., & Lindner, J. (2018). Self-assembled Surface Patterns
for Controlled Nanoparticle Placement and Improved Semiconductor Heteroepitaxy.
Presented at the 12th International 12th International Conference on Physics of
Advanced Materials (ICPAM-12), Heraklion (Greece).
bibtex: '@inproceedings{Brassat_Riedl_Lindner_2018, title={Self-assembled Surface
Patterns for Controlled Nanoparticle Placement and Improved Semiconductor Heteroepitaxy},
author={Brassat, Katharina and Riedl, Thomas and Lindner, Jörg}, year={2018} }'
chicago: Brassat, Katharina, Thomas Riedl, and Jörg Lindner. “Self-Assembled Surface
Patterns for Controlled Nanoparticle Placement and Improved Semiconductor Heteroepitaxy,”
2018.
ieee: K. Brassat, T. Riedl, and J. Lindner, “Self-assembled Surface Patterns for
Controlled Nanoparticle Placement and Improved Semiconductor Heteroepitaxy,” presented
at the 12th International 12th International Conference on Physics of Advanced
Materials (ICPAM-12), Heraklion (Greece), 2018.
mla: Brassat, Katharina, et al. Self-Assembled Surface Patterns for Controlled
Nanoparticle Placement and Improved Semiconductor Heteroepitaxy. 2018.
short: 'K. Brassat, T. Riedl, J. Lindner, in: 2018.'
conference:
end_date: 2018-09-28
location: Heraklion (Greece)
name: 12th International 12th International Conference on Physics of Advanced Materials
(ICPAM-12)
start_date: 2018-09-22
date_created: 2018-09-17T13:33:18Z
date_updated: 2022-01-06T07:01:03Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
status: public
title: Self-assembled Surface Patterns for Controlled Nanoparticle Placement and Improved
Semiconductor Heteroepitaxy
type: conference
user_id: '55706'
year: '2018'
...
---
_id: '4417'
article_number: nl-2018-028138
author:
- first_name: Riccardo
full_name: Scott, Riccardo
last_name: Scott
- first_name: Anatol
full_name: Prudnikau, Anatol
last_name: Prudnikau
- first_name: Artsiom
full_name: Antanovich, Artsiom
last_name: Antanovich
- first_name: 'Soririos '
full_name: 'Christodoulou, Soririos '
last_name: Christodoulou
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Guilaume
full_name: Bertrand, Guilaume
last_name: Bertrand
- first_name: Nina
full_name: Owschimikow, Nina
last_name: Owschimikow
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Zeger
full_name: Hens, Zeger
last_name: Hens
- first_name: Iwan
full_name: Moreels, Iwan
last_name: Moreels
- first_name: Mikhail
full_name: Artemyev, Mikhail
last_name: Artemyev
- first_name: Ulrike
full_name: Woggon, Ulrike
last_name: Woggon
- first_name: 'Alexander '
full_name: 'Achtstein, Alexander '
last_name: Achtstein
citation:
ama: Scott R, Prudnikau A, Antanovich A, et al. Exciton-Phonon Interaction in Core-Only,
Core-Shell Nanoplatelets and Quantum Dots . submitted to Nano Letters.
apa: Scott, R., Prudnikau, A., Antanovich, A., Christodoulou, S., Riedl, T., Bertrand,
G., … Achtstein, A. (n.d.). Exciton-Phonon Interaction in Core-Only, Core-Shell
Nanoplatelets and Quantum Dots . Submitted to Nano Letters.
bibtex: '@article{Scott_Prudnikau_Antanovich_Christodoulou_Riedl_Bertrand_Owschimikow_Lindner_Hens_Moreels_et
al., title={Exciton-Phonon Interaction in Core-Only, Core-Shell Nanoplatelets
and Quantum Dots }, number={nl-2018-028138}, journal={submitted to Nano Letters},
author={Scott, Riccardo and Prudnikau, Anatol and Antanovich, Artsiom and Christodoulou,
Soririos and Riedl, Thomas and Bertrand, Guilaume and Owschimikow, Nina and Lindner,
Jörg and Hens, Zeger and Moreels, Iwan and et al.} }'
chicago: Scott, Riccardo, Anatol Prudnikau, Artsiom Antanovich, Soririos Christodoulou,
Thomas Riedl, Guilaume Bertrand, Nina Owschimikow, et al. “Exciton-Phonon Interaction
in Core-Only, Core-Shell Nanoplatelets and Quantum Dots .” Submitted to Nano
Letters, n.d.
ieee: R. Scott et al., “Exciton-Phonon Interaction in Core-Only, Core-Shell
Nanoplatelets and Quantum Dots ,” submitted to Nano Letters.
mla: Scott, Riccardo, et al. “Exciton-Phonon Interaction in Core-Only, Core-Shell
Nanoplatelets and Quantum Dots .” Submitted to Nano Letters, nl-2018-028138.
short: R. Scott, A. Prudnikau, A. Antanovich, S. Christodoulou, T. Riedl, G. Bertrand,
N. Owschimikow, J. Lindner, Z. Hens, I. Moreels, M. Artemyev, U. Woggon, A. Achtstein,
Submitted to Nano Letters (n.d.).
date_created: 2018-09-17T13:40:22Z
date_updated: 2022-01-06T07:01:03Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
publication: submitted to Nano Letters
publication_status: submitted
status: public
title: 'Exciton-Phonon Interaction in Core-Only, Core-Shell Nanoplatelets and Quantum
Dots '
type: journal_article
user_id: '55706'
year: '2018'
...
---
_id: '4442'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Lindner J. Stability of Heteroepitaxial Coherent Growth Modes on Nanowire
Radial Surfaces. submitted to Phys Rev Mat.
apa: Riedl, T., & Lindner, J. (n.d.). Stability of Heteroepitaxial Coherent
Growth Modes on Nanowire Radial Surfaces. Submitted to Phys. Rev. Mat.
bibtex: '@article{Riedl_Lindner, title={Stability of Heteroepitaxial Coherent Growth
Modes on Nanowire Radial Surfaces}, journal={submitted to Phys. Rev. Mat.}, author={Riedl,
Thomas and Lindner, Jörg} }'
chicago: Riedl, Thomas, and Jörg Lindner. “Stability of Heteroepitaxial Coherent
Growth Modes on Nanowire Radial Surfaces.” Submitted to Phys. Rev. Mat.,
n.d.
ieee: T. Riedl and J. Lindner, “Stability of Heteroepitaxial Coherent Growth Modes
on Nanowire Radial Surfaces,” submitted to Phys. Rev. Mat.
mla: Riedl, Thomas, and Jörg Lindner. “Stability of Heteroepitaxial Coherent Growth
Modes on Nanowire Radial Surfaces.” Submitted to Phys. Rev. Mat.
short: T. Riedl, J. Lindner, Submitted to Phys. Rev. Mat. (n.d.).
date_created: 2018-09-18T11:38:52Z
date_updated: 2022-01-06T07:01:04Z
department:
- _id: '15'
- _id: '286'
language:
- iso: eng
publication: submitted to Phys. Rev. Mat.
publication_status: submitted
status: public
title: Stability of Heteroepitaxial Coherent Growth Modes on Nanowire Radial Surfaces
type: journal_article
user_id: '55706'
year: '2018'
...
---
_id: '4447'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Julius
full_name: Bürger, Julius
id: '46952'
last_name: Bürger
- first_name: 'Vinay '
full_name: 'Kunnathully, Vinay '
last_name: Kunnathully
- first_name: Marie
full_name: Wiegand, Marie
last_name: Wiegand
- first_name: K.
full_name: Duschik, K.
last_name: Duschik
- first_name: 'D. '
full_name: 'Ramermann, D. '
last_name: Ramermann
- first_name: 'I. '
full_name: 'Ennen, I. '
last_name: Ennen
- first_name: 'Y. '
full_name: 'Hertle, Y. '
last_name: Hertle
- first_name: Mirko
full_name: Schaper, Mirko
last_name: Schaper
- first_name: 'T. '
full_name: 'Hellweg, T. '
last_name: Hellweg
- first_name: A.
full_name: Hütten, A.
last_name: Hütten
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Riedl T, Bürger J, Kunnathully V, et al. Nanostructure Research using Transmission
Electron Microscopy at the new OWL Analytic Centre. In: ; 2018.'
apa: Riedl, T., Bürger, J., Kunnathully, V., Wiegand, M., Duschik, K., Ramermann,
D., … Lindner, J. (2018). Nanostructure Research using Transmission Electron Microscopy
at the new OWL Analytic Centre. Presented at the 8th NRW Nano Conference, Dortmund
(Germany).
bibtex: '@inproceedings{Riedl_Bürger_Kunnathully_Wiegand_Duschik_Ramermann_Ennen_Hertle_Schaper_Hellweg_et
al._2018, title={Nanostructure Research using Transmission Electron Microscopy
at the new OWL Analytic Centre}, author={Riedl, Thomas and Bürger, Julius and
Kunnathully, Vinay and Wiegand, Marie and Duschik, K. and Ramermann, D. and
Ennen, I. and Hertle, Y. and Schaper, Mirko and Hellweg, T. and et al.}, year={2018}
}'
chicago: Riedl, Thomas, Julius Bürger, Vinay Kunnathully, Marie Wiegand, K. Duschik,
D. Ramermann, I. Ennen, et al. “Nanostructure Research Using Transmission Electron
Microscopy at the New OWL Analytic Centre,” 2018.
ieee: T. Riedl et al., “Nanostructure Research using Transmission Electron
Microscopy at the new OWL Analytic Centre,” presented at the 8th NRW Nano Conference,
Dortmund (Germany), 2018.
mla: Riedl, Thomas, et al. Nanostructure Research Using Transmission Electron
Microscopy at the New OWL Analytic Centre. 2018.
short: 'T. Riedl, J. Bürger, V. Kunnathully, M. Wiegand, K. Duschik, D. Ramermann,
I. Ennen, Y. Hertle, M. Schaper, T. Hellweg, A. Hütten, J. Lindner, in: 2018.'
conference:
end_date: 2018-11-22
location: Dortmund (Germany)
name: 8th NRW Nano Conference
start_date: 2018-11-21
date_created: 2018-09-18T11:53:03Z
date_updated: 2022-01-06T07:01:04Z
department:
- _id: '15'
- _id: '286'
status: public
title: Nanostructure Research using Transmission Electron Microscopy at the new OWL
Analytic Centre
type: conference
user_id: '55706'
year: '2018'
...
---
_id: '3950'
abstract:
- lang: eng
text: "In the last decade, zinc blende structure III–V semiconductors have been
increasingly utilized for the realization of high‐performance optoelectronic applications
because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric
fields. However, the integration of III–V devices on the Si platform commonly
used for CMOS electronic \r\ncircuits still poses a challenge, due to the large
densities of mismatch‐related defects in heteroepitaxial III–V layers grown on
planar Si substrates. A promising method to obtain thin III–V layers of high crystalline
quality is the growth on nanopatterned substrates. In this approach, defects can
be effectively eliminated by elastic lattice relaxation in three \r\ndimensions
or confined close to the substrate interface by using aspect‐ratio trapping masks.
As a result, an etch pit density as low as 3.3 × 10^5 cm^−2 and a flat surface
of submicron GaAs layers have been accomplished by growth onto a SiO2 nanohole
film patterned Si(001) substrate, where the threading defects are trapped at the
SiO2 mask sidewalls. An open issue that remains to be resolved is to gain a better
understanding of the interplay between mask shape, growth conditions and formation
of coalescence defects during mask overgrowth in order to achieve thin device
quality III–V layers"
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Riedl T, Lindner J. Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned
Substrates. In: Nanai L, ed. Nanoscaled Films and Layers. InTech; 2017.
doi:10.5772/67572'
apa: Riedl, T., & Lindner, J. (2017). Heteroepitaxy of III–V Zinc Blende Semiconductors
on Nanopatterned Substrates. In L. Nanai (Ed.), Nanoscaled Films and Layers.
InTech. https://doi.org/10.5772/67572
bibtex: '@inbook{Riedl_Lindner_2017, title={Heteroepitaxy of III–V Zinc Blende Semiconductors
on Nanopatterned Substrates}, DOI={10.5772/67572},
booktitle={Nanoscaled Films and Layers}, publisher={InTech}, author={Riedl, Thomas
and Lindner, Jörg}, editor={Nanai, L.Editor}, year={2017} }'
chicago: Riedl, Thomas, and Jörg Lindner. “Heteroepitaxy of III–V Zinc Blende Semiconductors
on Nanopatterned Substrates.” In Nanoscaled Films and Layers, edited by
L. Nanai. InTech, 2017. https://doi.org/10.5772/67572.
ieee: T. Riedl and J. Lindner, “Heteroepitaxy of III–V Zinc Blende Semiconductors
on Nanopatterned Substrates,” in Nanoscaled Films and Layers, L. Nanai,
Ed. InTech, 2017.
mla: Riedl, Thomas, and Jörg Lindner. “Heteroepitaxy of III–V Zinc Blende Semiconductors
on Nanopatterned Substrates.” Nanoscaled Films and Layers, edited by L.
Nanai, InTech, 2017, doi:10.5772/67572.
short: 'T. Riedl, J. Lindner, in: L. Nanai (Ed.), Nanoscaled Films and Layers, InTech,
2017.'
date_created: 2018-08-20T13:09:20Z
date_updated: 2022-01-06T06:59:59Z
department:
- _id: '286'
- _id: '15'
doi: 10.5772/67572
editor:
- first_name: L.
full_name: Nanai, L.
last_name: Nanai
language:
- iso: eng
publication: Nanoscaled Films and Layers
publication_identifier:
isbn:
- '9789535131434'
- '9789535131441'
publication_status: published
publisher: InTech
status: public
title: Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates
type: book_chapter
user_id: '55706'
year: '2017'
...
---
_id: '3954'
author:
- first_name: Michael
full_name: Kismann, Michael
last_name: Kismann
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Kismann M, Riedl T, Lindner J. Morphological properties of nanopillar patterned
Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical
etching. 2017.
apa: Kismann, M., Riedl, T., & Lindner, J. (2017). Morphological properties
of nanopillar patterned Si surfaces obtained by nanosphere lithography and metal-assisted
wet-chemical etching. Presented at the E-MRS Spring Meeting 2017, Straßburg (France).
bibtex: '@article{Kismann_Riedl_Lindner_2017, series={Poster P.9.1}, title={Morphological
properties of nanopillar patterned Si surfaces obtained by nanosphere lithography
and metal-assisted wet-chemical etching}, author={Kismann, Michael and Riedl,
Thomas and Lindner, Jörg}, year={2017}, collection={Poster P.9.1} }'
chicago: Kismann, Michael, Thomas Riedl, and Jörg Lindner. “Morphological Properties
of Nanopillar Patterned Si Surfaces Obtained by Nanosphere Lithography and Metal-Assisted
Wet-Chemical Etching.” Poster P.9.1, 2017.
ieee: M. Kismann, T. Riedl, and J. Lindner, “Morphological properties of nanopillar
patterned Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical
etching.” 2017.
mla: Kismann, Michael, et al. Morphological Properties of Nanopillar Patterned
Si Surfaces Obtained by Nanosphere Lithography and Metal-Assisted Wet-Chemical
Etching. 2017.
short: M. Kismann, T. Riedl, J. Lindner, (2017).
conference:
end_date: 2017-05-26
location: Straßburg (France)
name: E-MRS Spring Meeting 2017
start_date: 2017-05-22
date_created: 2018-08-20T13:28:53Z
date_updated: 2022-01-06T06:59:59Z
department:
- _id: '286'
- _id: '15'
series_title: Poster P.9.1
status: public
title: Morphological properties of nanopillar patterned Si surfaces obtained by nanosphere
lithography and metal-assisted wet-chemical etching
type: conference
user_id: '55706'
year: '2017'
...
---
_id: '3955'
author:
- first_name: Vinay
full_name: Kunnathully, Vinay
last_name: Kunnathully
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: A.
full_name: Karlisch, A.
last_name: Karlisch
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Kunnathully V, Riedl T, Karlisch A, Reuter D, Lindner J. InAs heteroepitaxy
on GaAs patterned by nanosphere lithography. In: ; 2017.'
apa: Kunnathully, V., Riedl, T., Karlisch, A., Reuter, D., & Lindner, J. (2017).
InAs heteroepitaxy on GaAs patterned by nanosphere lithography. Presented at the
E-MRS Fall Meeting 2017, Warsaw (Poland).
bibtex: '@inproceedings{Kunnathully_Riedl_Karlisch_Reuter_Lindner_2017, title={InAs
heteroepitaxy on GaAs patterned by nanosphere lithography}, author={Kunnathully,
Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg},
year={2017} }'
chicago: Kunnathully, Vinay, Thomas Riedl, A. Karlisch, Dirk Reuter, and Jörg Lindner.
“InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography,” 2017.
ieee: V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, and J. Lindner, “InAs heteroepitaxy
on GaAs patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting
2017, Warsaw (Poland), 2017.
mla: Kunnathully, Vinay, et al. InAs Heteroepitaxy on GaAs Patterned by Nanosphere
Lithography. 2017.
short: 'V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, J. Lindner, in: 2017.'
conference:
end_date: 2017-09-21
location: Warsaw (Poland)
name: E-MRS Fall Meeting 2017
start_date: 2017-09-18
date_created: 2018-08-20T13:31:50Z
date_updated: 2022-01-06T06:59:59Z
department:
- _id: '286'
- _id: '292'
- _id: '15'
status: public
title: InAs heteroepitaxy on GaAs patterned by nanosphere lithography
type: conference
user_id: '55706'
year: '2017'
...