---
_id: '65611'
abstract:
- lang: eng
text: "\r\n Spins confined in optically active quantum
dot molecules (QDMs) can be used for the deterministic generation of photonic
graph states with tailored entanglement structures. Their usefulness for the generation
of such nonclassical states of light is determined by orbital and spin decoherence
mechanisms, particularly phonon-mediated processes dominant at energy scales up
to a few millielectronvolts. Here, we directly measure the spectral function of
orbital phonon relaxation between the energy states of the neutral exciton in
a QDM and benchmark our findings against microscopic\r\n \r\n \r\n
\ k\r\n ·\r\n
\ p\r\n \r\n \r\n \r\n
\ theory. Our results reveal pronounced resonances and antiresonances
in the phonon-relaxation rates, ranging from tens of\r\n \r\n \r\n
\ µ\r\n \r\n
\ \r\n s\r\n
\ \r\n \r\n
\ −\r\n 1\r\n
\ \r\n \r\n \r\n
\ \r\n up to tens of\r\n \r\n \r\n
\ \r\n ns\r\n
\ \r\n \r\n −\r\n
\ 1\r\n \r\n
\ \r\n \r\n .
Comparison with a kinetic model reveals the voltage (energy) dependent phonon
coupling strength and fully explains the interplay between phonon-assisted relaxation
and radiative recombination. The resonances and antiresonances enable further
tunability of the exciton lifetime which can be leveraged to increase the lifetime
of energetically unfavorable charge configurations needed for realizing efficient
spin-photon interfaces and multidimensional cluster states.\r\n "
article_number: '235305'
author:
- first_name: Michelle
full_name: Lienhart, Michelle
last_name: Lienhart
- first_name: Krzysztof
full_name: Gawarecki, Krzysztof
last_name: Gawarecki
- first_name: Markus
full_name: Stöcker, Markus
last_name: Stöcker
- first_name: Frederik
full_name: Bopp, Frederik
last_name: Bopp
- first_name: Charlotte
full_name: Cullip, Charlotte
last_name: Cullip
- first_name: Nadeem
full_name: Akhlaq, Nadeem
last_name: Akhlaq
- first_name: Christopher
full_name: Thalacker, Christopher
last_name: Thalacker
- first_name: Johannes
full_name: Schall, Johannes
last_name: Schall
- first_name: Sven
full_name: Rodt, Sven
last_name: Rodt
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Stephan
full_name: Reitzenstein, Stephan
last_name: Reitzenstein
- first_name: Kai
full_name: Müller, Kai
last_name: Müller
- first_name: Paweł
full_name: Machnikowski, Paweł
last_name: Machnikowski
- first_name: Jonathan J.
full_name: Finley, Jonathan J.
last_name: Finley
citation:
ama: Lienhart M, Gawarecki K, Stöcker M, et al. Resonant and antiresonant exciton-phonon
coupling in quantum dot molecules. Physical Review B. 2025;112(23). doi:10.1103/xc25-1tph
apa: Lienhart, M., Gawarecki, K., Stöcker, M., Bopp, F., Cullip, C., Akhlaq, N.,
Thalacker, C., Schall, J., Rodt, S., Ludwig, A., Reuter, D., Reitzenstein, S.,
Müller, K., Machnikowski, P., & Finley, J. J. (2025). Resonant and antiresonant
exciton-phonon coupling in quantum dot molecules. Physical Review B, 112(23),
Article 235305. https://doi.org/10.1103/xc25-1tph
bibtex: '@article{Lienhart_Gawarecki_Stöcker_Bopp_Cullip_Akhlaq_Thalacker_Schall_Rodt_Ludwig_et
al._2025, title={Resonant and antiresonant exciton-phonon coupling in quantum
dot molecules}, volume={112}, DOI={10.1103/xc25-1tph},
number={23235305}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Lienhart, Michelle and Gawarecki, Krzysztof and Stöcker, Markus
and Bopp, Frederik and Cullip, Charlotte and Akhlaq, Nadeem and Thalacker, Christopher
and Schall, Johannes and Rodt, Sven and Ludwig, Arne and et al.}, year={2025}
}'
chicago: Lienhart, Michelle, Krzysztof Gawarecki, Markus Stöcker, Frederik Bopp,
Charlotte Cullip, Nadeem Akhlaq, Christopher Thalacker, et al. “Resonant and Antiresonant
Exciton-Phonon Coupling in Quantum Dot Molecules.” Physical Review B 112,
no. 23 (2025). https://doi.org/10.1103/xc25-1tph.
ieee: 'M. Lienhart et al., “Resonant and antiresonant exciton-phonon coupling
in quantum dot molecules,” Physical Review B, vol. 112, no. 23, Art. no.
235305, 2025, doi: 10.1103/xc25-1tph.'
mla: Lienhart, Michelle, et al. “Resonant and Antiresonant Exciton-Phonon Coupling
in Quantum Dot Molecules.” Physical Review B, vol. 112, no. 23, 235305,
American Physical Society (APS), 2025, doi:10.1103/xc25-1tph.
short: M. Lienhart, K. Gawarecki, M. Stöcker, F. Bopp, C. Cullip, N. Akhlaq, C.
Thalacker, J. Schall, S. Rodt, A. Ludwig, D. Reuter, S. Reitzenstein, K. Müller,
P. Machnikowski, J.J. Finley, Physical Review B 112 (2025).
date_created: 2026-05-13T06:24:29Z
date_updated: 2026-05-15T06:13:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/xc25-1tph
intvolume: ' 112'
issue: '23'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 2469-9950
- 2469-9969
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Resonant and antiresonant exciton-phonon coupling in quantum dot molecules
type: journal_article
user_id: '42514'
volume: 112
year: '2025'
...
---
_id: '65669'
abstract:
- lang: eng
text: Local droplet etching and subsequent refilling enables the fabrication
of highly symmetric quantum dots with low fine structure splitting, suitable for
generating polarization entangled photons. While well established in GaAs/AlxGa1−xAs,
this approach does not yield emission in the telecom bands required for low loss
fiber-based quantum communication. To achieve emission at 1.55 μm, local droplet
etching must be adapted to alternative material platforms such as InP. Here, we
systematically investigate how the etching material deposition rate and etching
time influence nanohole morphology in In0.52Al0.48As layers lattice-matched to
InP. In the first experiment, InAl was deposited at fluxes of 0.2–4.0 Å s−1 at
Tetch = 350 °C and 460 °C. Lower fluxes produced nanoholes with lower density
and larger ring diameters, indicating fewer and larger initial droplets, consistent
with scaling theory. The average nanohole diameter decreased monotonically with
increasing flux, whereas the average depth showed no clear dependence on flux.
In the second experiment, etching times of 30–600 s were tested for InAl, In,
and Al droplets. Average nanohole diameters remained constant for Al across all
etching times, but decreased for In and InAl with increasing etching time, suggesting
sidewall redeposition during etching. For all droplet types, depths peaked at
intermediate times and decreased for prolonged etching, consistent with material
diffusion into the nanohole after droplet consumption.
article_number: '913'
author:
- first_name: Dennis
full_name: Deutsch, Dennis
id: '23489'
last_name: Deutsch
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Deutsch D, Reuter D. Influence of the Etching Material Deposition Rate and
Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via
Local Droplet Epitaxy. Crystals. 2025;15(11). doi:10.3390/cryst15110913
apa: Deutsch, D., & Reuter, D. (2025). Influence of the Etching Material Deposition
Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As
Layers via Local Droplet Epitaxy. Crystals, 15(11), Article 913.
https://doi.org/10.3390/cryst15110913
bibtex: '@article{Deutsch_Reuter_2025, title={Influence of the Etching Material
Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As
Layers via Local Droplet Epitaxy}, volume={15}, DOI={10.3390/cryst15110913},
number={11913}, journal={Crystals}, publisher={MDPI AG}, author={Deutsch, Dennis
and Reuter, Dirk}, year={2025} }'
chicago: Deutsch, Dennis, and Dirk Reuter. “Influence of the Etching Material Deposition
Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As
Layers via Local Droplet Epitaxy.” Crystals 15, no. 11 (2025). https://doi.org/10.3390/cryst15110913.
ieee: 'D. Deutsch and D. Reuter, “Influence of the Etching Material Deposition Rate
and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers
via Local Droplet Epitaxy,” Crystals, vol. 15, no. 11, Art. no. 913, 2025,
doi: 10.3390/cryst15110913.'
mla: Deutsch, Dennis, and Dirk Reuter. “Influence of the Etching Material Deposition
Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As
Layers via Local Droplet Epitaxy.” Crystals, vol. 15, no. 11, 913, MDPI
AG, 2025, doi:10.3390/cryst15110913.
short: D. Deutsch, D. Reuter, Crystals 15 (2025).
date_created: 2026-05-21T06:35:35Z
date_updated: 2026-05-21T06:36:29Z
department:
- _id: '15'
- _id: '230'
doi: 10.3390/cryst15110913
intvolume: ' 15'
issue: '11'
language:
- iso: eng
publication: Crystals
publication_identifier:
issn:
- 2073-4352
publication_status: published
publisher: MDPI AG
status: public
title: Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole
Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet Epitaxy
type: journal_article
user_id: '42514'
volume: 15
year: '2025'
...
---
_id: '57553'
author:
- first_name: Setthanat
full_name: Wijitpatima, Setthanat
last_name: Wijitpatima
- first_name: Normen
full_name: Auler, Normen
last_name: Auler
- first_name: Priyabrata
full_name: Mudi, Priyabrata
last_name: Mudi
- first_name: Timon
full_name: Funk, Timon
last_name: Funk
- first_name: Avijit
full_name: Barua, Avijit
last_name: Barua
- first_name: Binamra
full_name: Shrestha, Binamra
last_name: Shrestha
- first_name: Johannes
full_name: Schall, Johannes
last_name: Schall
- first_name: Imad
full_name: Limame, Imad
last_name: Limame
- first_name: Sven
full_name: Rodt, Sven
last_name: Rodt
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Stephan
full_name: Reitzenstein, Stephan
last_name: Reitzenstein
citation:
ama: Wijitpatima S, Auler N, Mudi P, et al. Bright Electrically Contacted Circular
Bragg Grating Resonators with Deterministically Integrated Quantum Dots. ACS
Nano. 2024;18(46):31834-31845. doi:10.1021/acsnano.4c07820
apa: Wijitpatima, S., Auler, N., Mudi, P., Funk, T., Barua, A., Shrestha, B., Schall,
J., Limame, I., Rodt, S., Reuter, D., & Reitzenstein, S. (2024). Bright Electrically
Contacted Circular Bragg Grating Resonators with Deterministically Integrated
Quantum Dots. ACS Nano, 18(46), 31834–31845. https://doi.org/10.1021/acsnano.4c07820
bibtex: '@article{Wijitpatima_Auler_Mudi_Funk_Barua_Shrestha_Schall_Limame_Rodt_Reuter_et
al._2024, title={Bright Electrically Contacted Circular Bragg Grating Resonators
with Deterministically Integrated Quantum Dots}, volume={18}, DOI={10.1021/acsnano.4c07820},
number={46}, journal={ACS Nano}, publisher={American Chemical Society (ACS)},
author={Wijitpatima, Setthanat and Auler, Normen and Mudi, Priyabrata and Funk,
Timon and Barua, Avijit and Shrestha, Binamra and Schall, Johannes and Limame,
Imad and Rodt, Sven and Reuter, Dirk and et al.}, year={2024}, pages={31834–31845}
}'
chicago: 'Wijitpatima, Setthanat, Normen Auler, Priyabrata Mudi, Timon Funk, Avijit
Barua, Binamra Shrestha, Johannes Schall, et al. “Bright Electrically Contacted
Circular Bragg Grating Resonators with Deterministically Integrated Quantum Dots.”
ACS Nano 18, no. 46 (2024): 31834–45. https://doi.org/10.1021/acsnano.4c07820.'
ieee: 'S. Wijitpatima et al., “Bright Electrically Contacted Circular Bragg
Grating Resonators with Deterministically Integrated Quantum Dots,” ACS Nano,
vol. 18, no. 46, pp. 31834–31845, 2024, doi: 10.1021/acsnano.4c07820.'
mla: Wijitpatima, Setthanat, et al. “Bright Electrically Contacted Circular Bragg
Grating Resonators with Deterministically Integrated Quantum Dots.” ACS Nano,
vol. 18, no. 46, American Chemical Society (ACS), 2024, pp. 31834–45, doi:10.1021/acsnano.4c07820.
short: S. Wijitpatima, N. Auler, P. Mudi, T. Funk, A. Barua, B. Shrestha, J. Schall,
I. Limame, S. Rodt, D. Reuter, S. Reitzenstein, ACS Nano 18 (2024) 31834–31845.
date_created: 2024-12-03T08:39:35Z
date_updated: 2024-12-10T08:20:38Z
department:
- _id: '15'
- _id: '230'
doi: 10.1021/acsnano.4c07820
intvolume: ' 18'
issue: '46'
language:
- iso: eng
page: 31834-31845
publication: ACS Nano
publication_identifier:
issn:
- 1936-0851
- 1936-086X
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: Bright Electrically Contacted Circular Bragg Grating Resonators with Deterministically
Integrated Quantum Dots
type: journal_article
user_id: '42514'
volume: 18
year: '2024'
...
---
_id: '57678'
author:
- first_name: Tobias
full_name: Henksmeier, Tobias
id: '42539'
last_name: Henksmeier
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Henksmeier T, Reuter D. Low-temperature fabrication of amorphous carbon films
as a universal template for remote epitaxy. Communications materials. Published
online 2024. doi:10.48550/ARXIV.2410.15487
apa: Henksmeier, T., & Reuter, D. (2024). Low-temperature fabrication of amorphous
carbon films as a universal template for remote epitaxy. Communications Materials.
https://doi.org/10.48550/ARXIV.2410.15487
bibtex: '@article{Henksmeier_Reuter_2024, title={Low-temperature fabrication of
amorphous carbon films as a universal template for remote epitaxy}, DOI={10.48550/ARXIV.2410.15487},
journal={Communications materials}, author={Henksmeier, Tobias and Reuter, Dirk},
year={2024} }'
chicago: Henksmeier, Tobias, and Dirk Reuter. “Low-Temperature Fabrication of Amorphous
Carbon Films as a Universal Template for Remote Epitaxy.” Communications Materials,
2024. https://doi.org/10.48550/ARXIV.2410.15487.
ieee: 'T. Henksmeier and D. Reuter, “Low-temperature fabrication of amorphous carbon
films as a universal template for remote epitaxy,” Communications materials,
2024, doi: 10.48550/ARXIV.2410.15487.'
mla: Henksmeier, Tobias, and Dirk Reuter. “Low-Temperature Fabrication of Amorphous
Carbon Films as a Universal Template for Remote Epitaxy.” Communications Materials,
2024, doi:10.48550/ARXIV.2410.15487.
short: T. Henksmeier, D. Reuter, Communications Materials (2024).
date_created: 2024-12-10T07:42:57Z
date_updated: 2024-12-10T07:45:56Z
department:
- _id: '15'
- _id: '230'
doi: 10.48550/ARXIV.2410.15487
language:
- iso: eng
publication: Communications materials
status: public
title: Low-temperature fabrication of amorphous carbon films as a universal template
for remote epitaxy
type: journal_article
user_id: '42514'
year: '2024'
...
---
_id: '57815'
author:
- first_name: Marek
full_name: Karzel, Marek
last_name: Karzel
- first_name: Anton K.
full_name: Samusev, Anton K.
last_name: Samusev
- first_name: Tetiana L.
full_name: Linnik, Tetiana L.
last_name: Linnik
- first_name: Mario
full_name: Littmann, Mario
last_name: Littmann
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Manfred
full_name: Bayer, Manfred
last_name: Bayer
- first_name: Alexey V.
full_name: Scherbakov, Alexey V.
last_name: Scherbakov
- first_name: Andrey V.
full_name: Akimov, Andrey V.
last_name: Akimov
citation:
ama: Karzel M, Samusev AK, Linnik TL, et al. Polariton-Induced Transparency in Multiple
Quantum Wells Probed by Time Domain Brillouin Scattering. ACS Photonics.
Published online 2024. doi:10.1021/acsphotonics.4c01357
apa: Karzel, M., Samusev, A. K., Linnik, T. L., Littmann, M., Reuter, D., Bayer,
M., Scherbakov, A. V., & Akimov, A. V. (2024). Polariton-Induced Transparency
in Multiple Quantum Wells Probed by Time Domain Brillouin Scattering. ACS Photonics.
https://doi.org/10.1021/acsphotonics.4c01357
bibtex: '@article{Karzel_Samusev_Linnik_Littmann_Reuter_Bayer_Scherbakov_Akimov_2024,
title={Polariton-Induced Transparency in Multiple Quantum Wells Probed by Time
Domain Brillouin Scattering}, DOI={10.1021/acsphotonics.4c01357},
journal={ACS Photonics}, publisher={American Chemical Society (ACS)}, author={Karzel,
Marek and Samusev, Anton K. and Linnik, Tetiana L. and Littmann, Mario and Reuter,
Dirk and Bayer, Manfred and Scherbakov, Alexey V. and Akimov, Andrey V.}, year={2024}
}'
chicago: Karzel, Marek, Anton K. Samusev, Tetiana L. Linnik, Mario Littmann, Dirk
Reuter, Manfred Bayer, Alexey V. Scherbakov, and Andrey V. Akimov. “Polariton-Induced
Transparency in Multiple Quantum Wells Probed by Time Domain Brillouin Scattering.”
ACS Photonics, 2024. https://doi.org/10.1021/acsphotonics.4c01357.
ieee: 'M. Karzel et al., “Polariton-Induced Transparency in Multiple Quantum
Wells Probed by Time Domain Brillouin Scattering,” ACS Photonics, 2024,
doi: 10.1021/acsphotonics.4c01357.'
mla: Karzel, Marek, et al. “Polariton-Induced Transparency in Multiple Quantum Wells
Probed by Time Domain Brillouin Scattering.” ACS Photonics, American Chemical
Society (ACS), 2024, doi:10.1021/acsphotonics.4c01357.
short: M. Karzel, A.K. Samusev, T.L. Linnik, M. Littmann, D. Reuter, M. Bayer, A.V.
Scherbakov, A.V. Akimov, ACS Photonics (2024).
date_created: 2024-12-16T11:55:09Z
date_updated: 2024-12-16T11:55:38Z
department:
- _id: '15'
- _id: '230'
doi: 10.1021/acsphotonics.4c01357
language:
- iso: eng
publication: ACS Photonics
publication_identifier:
issn:
- 2330-4022
- 2330-4022
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: Polariton-Induced Transparency in Multiple Quantum Wells Probed by Time Domain
Brillouin Scattering
type: journal_article
user_id: '42514'
year: '2024'
...
---
_id: '46133'
article_number: '165426'
author:
- first_name: Frederik
full_name: Bopp, Frederik
last_name: Bopp
- first_name: Johannes
full_name: Schall, Johannes
last_name: Schall
- first_name: Nikolai
full_name: Bart, Nikolai
last_name: Bart
- first_name: Florian
full_name: Vögl, Florian
last_name: Vögl
- first_name: Charlotte
full_name: Cullip, Charlotte
last_name: Cullip
- first_name: Friedrich
full_name: Sbresny, Friedrich
last_name: Sbresny
- first_name: Katarina
full_name: Boos, Katarina
last_name: Boos
- first_name: Christopher
full_name: Thalacker, Christopher
last_name: Thalacker
- first_name: Michelle
full_name: Lienhart, Michelle
last_name: Lienhart
- first_name: Sven
full_name: Rodt, Sven
last_name: Rodt
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Stephan
full_name: Reitzenstein, Stephan
last_name: Reitzenstein
- first_name: Kai
full_name: Müller, Kai
last_name: Müller
- first_name: Jonathan J.
full_name: Finley, Jonathan J.
last_name: Finley
citation:
ama: Bopp F, Schall J, Bart N, et al. Coherent driving of direct and indirect excitons
in a quantum dot molecule. Physical Review B. 2023;107(16). doi:10.1103/physrevb.107.165426
apa: Bopp, F., Schall, J., Bart, N., Vögl, F., Cullip, C., Sbresny, F., Boos, K.,
Thalacker, C., Lienhart, M., Rodt, S., Reuter, D., Ludwig, A., Wieck, A. D., Reitzenstein,
S., Müller, K., & Finley, J. J. (2023). Coherent driving of direct and indirect
excitons in a quantum dot molecule. Physical Review B, 107(16),
Article 165426. https://doi.org/10.1103/physrevb.107.165426
bibtex: '@article{Bopp_Schall_Bart_Vögl_Cullip_Sbresny_Boos_Thalacker_Lienhart_Rodt_et
al._2023, title={Coherent driving of direct and indirect excitons in a quantum
dot molecule}, volume={107}, DOI={10.1103/physrevb.107.165426},
number={16165426}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Bopp, Frederik and Schall, Johannes and Bart, Nikolai and Vögl,
Florian and Cullip, Charlotte and Sbresny, Friedrich and Boos, Katarina and Thalacker,
Christopher and Lienhart, Michelle and Rodt, Sven and et al.}, year={2023} }'
chicago: Bopp, Frederik, Johannes Schall, Nikolai Bart, Florian Vögl, Charlotte
Cullip, Friedrich Sbresny, Katarina Boos, et al. “Coherent Driving of Direct and
Indirect Excitons in a Quantum Dot Molecule.” Physical Review B 107, no.
16 (2023). https://doi.org/10.1103/physrevb.107.165426.
ieee: 'F. Bopp et al., “Coherent driving of direct and indirect excitons
in a quantum dot molecule,” Physical Review B, vol. 107, no. 16, Art. no.
165426, 2023, doi: 10.1103/physrevb.107.165426.'
mla: Bopp, Frederik, et al. “Coherent Driving of Direct and Indirect Excitons in
a Quantum Dot Molecule.” Physical Review B, vol. 107, no. 16, 165426, American
Physical Society (APS), 2023, doi:10.1103/physrevb.107.165426.
short: F. Bopp, J. Schall, N. Bart, F. Vögl, C. Cullip, F. Sbresny, K. Boos, C.
Thalacker, M. Lienhart, S. Rodt, D. Reuter, A. Ludwig, A.D. Wieck, S. Reitzenstein,
K. Müller, J.J. Finley, Physical Review B 107 (2023).
date_created: 2023-07-25T08:20:20Z
date_updated: 2023-07-25T08:21:13Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.107.165426
intvolume: ' 107'
issue: '16'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 2469-9950
- 2469-9969
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Coherent driving of direct and indirect excitons in a quantum dot molecule
type: journal_article
user_id: '42514'
volume: 107
year: '2023'
...
---
_id: '46132'
author:
- first_name: Mario
full_name: Littmann, Mario
last_name: Littmann
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered
3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. physica status
solidi (b). 2023;260(7). doi:10.1002/pssb.202300034
apa: Littmann, M., Reuter, D., & As, D. J. (2023). Remote Epitaxy of Cubic Gallium
Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam
Epitaxy. Physica Status Solidi (b), 260(7). https://doi.org/10.1002/pssb.202300034
bibtex: '@article{Littmann_Reuter_As_2023, title={Remote Epitaxy of Cubic Gallium
Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam
Epitaxy}, volume={260}, DOI={10.1002/pssb.202300034},
number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Littmann,
Mario and Reuter, Dirk and As, Donat Josef}, year={2023} }'
chicago: Littmann, Mario, Dirk Reuter, and Donat Josef As. “Remote Epitaxy of Cubic
Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular
Beam Epitaxy.” Physica Status Solidi (b) 260, no. 7 (2023). https://doi.org/10.1002/pssb.202300034.
ieee: 'M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride
on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,”
physica status solidi (b), vol. 260, no. 7, 2023, doi: 10.1002/pssb.202300034.'
mla: Littmann, Mario, et al. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered
3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” Physica Status
Solidi (b), vol. 260, no. 7, Wiley, 2023, doi:10.1002/pssb.202300034.
short: M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).
date_created: 2023-07-25T08:06:13Z
date_updated: 2023-07-25T08:07:20Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.202300034
intvolume: ' 260'
issue: '7'
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates
by Plasma‐Assisted Molecular Beam Epitaxy
type: journal_article
user_id: '42514'
volume: 260
year: '2023'
...
---
_id: '46278'
abstract:
- lang: eng
text: 'Site-controlled Ga droplets on AlGaAs substrates are fabricated using
area-selective deposition of Ga through apertures in a mask during molecular beam
epitaxy (MBE). The Ga droplets can be crystallized into GaAs quantum dots using
a crystallization step under As flux. In order to model the complex process, including
the masked deposition of the droplets and a reduction of their number during a
thermal annealing step, a multiscale kinetic Monte Carlo (mkMC) simulation of
self-assembled Ga droplet formation on AlGaAs is expanded for area-selective deposition.
The simulation has only two free model parameters: the activation energy for surface
diffusion and the activation energy for thermal escape of adatoms from a droplet.
Simulated droplet numbers within the opening of the aperture agree quantitatively
with the experimental results down to the perfect site-control, with one droplet
per aperture. However, the model parameters are different compared to those of
the self-assembled droplet growth. We attribute this to the presence of the mask
in close proximity to the surface, which modifies the local process temperature
and the As background. This approach also explains the dependence of the model
parameters on the size of the aperture.'
article_number: '466'
author:
- first_name: Stefan
full_name: Feddersen, Stefan
last_name: Feddersen
- first_name: Viktoryia
full_name: Zolatanosha, Viktoryia
last_name: Zolatanosha
- first_name: Ahmed
full_name: Alshaikh, Ahmed
last_name: Alshaikh
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Christian
full_name: Heyn, Christian
last_name: Heyn
citation:
ama: Feddersen S, Zolatanosha V, Alshaikh A, Reuter D, Heyn C. Modeling of Masked
Droplet Deposition for Site-Controlled Ga Droplets. Nanomaterials. 2023;13(3).
doi:10.3390/nano13030466
apa: Feddersen, S., Zolatanosha, V., Alshaikh, A., Reuter, D., & Heyn, C. (2023).
Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets. Nanomaterials,
13(3), Article 466. https://doi.org/10.3390/nano13030466
bibtex: '@article{Feddersen_Zolatanosha_Alshaikh_Reuter_Heyn_2023, title={Modeling
of Masked Droplet Deposition for Site-Controlled Ga Droplets}, volume={13}, DOI={10.3390/nano13030466}, number={3466},
journal={Nanomaterials}, publisher={MDPI AG}, author={Feddersen, Stefan and Zolatanosha,
Viktoryia and Alshaikh, Ahmed and Reuter, Dirk and Heyn, Christian}, year={2023}
}'
chicago: Feddersen, Stefan, Viktoryia Zolatanosha, Ahmed Alshaikh, Dirk Reuter,
and Christian Heyn. “Modeling of Masked Droplet Deposition for Site-Controlled
Ga Droplets.” Nanomaterials 13, no. 3 (2023). https://doi.org/10.3390/nano13030466.
ieee: 'S. Feddersen, V. Zolatanosha, A. Alshaikh, D. Reuter, and C. Heyn, “Modeling
of Masked Droplet Deposition for Site-Controlled Ga Droplets,” Nanomaterials,
vol. 13, no. 3, Art. no. 466, 2023, doi: 10.3390/nano13030466.'
mla: Feddersen, Stefan, et al. “Modeling of Masked Droplet Deposition for Site-Controlled
Ga Droplets.” Nanomaterials, vol. 13, no. 3, 466, MDPI AG, 2023, doi:10.3390/nano13030466.
short: S. Feddersen, V. Zolatanosha, A. Alshaikh, D. Reuter, C. Heyn, Nanomaterials
13 (2023).
date_created: 2023-08-03T11:13:28Z
date_updated: 2023-08-03T11:14:10Z
department:
- _id: '15'
- _id: '230'
doi: 10.3390/nano13030466
intvolume: ' 13'
issue: '3'
keyword:
- General Materials Science
- General Chemical Engineering
language:
- iso: eng
publication: Nanomaterials
publication_identifier:
issn:
- 2079-4991
publication_status: published
publisher: MDPI AG
status: public
title: Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets
type: journal_article
user_id: '42514'
volume: 13
year: '2023'
...
---
_id: '57677'
abstract:
- lang: eng
text: We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system
lattice matched to InP, as future sources for single and entangled photons for
long-haul fiber-based quantum communication in the optical C-band. We achieved
these quantum dots by local droplet etching via InAl droplets in an In0.52Al0.48As
layer and subsequent filling of the holes with In0.53Ga0.47As. Here, we present
detailed investigations of the hole morphologies measured by atomic force microscopy.
Statistical analysis of a set of nanoholes reveals a high degree of symmetry for
nearly half of them when etched at optimized temperatures. Overgrowth with 50–150 nm
In0.52Al0.48As increases their diameter and elongates the holes along the [01̄1]-direction.
By systematically scanning the parameter space, we were able to fill the holes
with In0.53Ga0.47As, and by capping the filled holes and performing photoluminescence
measurements, we observe photoluminescence emission in the O-band up into the
C-band depending on the filling height of the nanoholes.
author:
- first_name: Dennis
full_name: Deutsch, Dennis
id: '23489'
last_name: Deutsch
- first_name: C.
full_name: Buchholz, C.
last_name: Buchholz
- first_name: V.
full_name: Zolatanosha, V.
last_name: Zolatanosha
- first_name: K. D.
full_name: Jöns, K. D.
last_name: Jöns
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Deutsch D, Buchholz C, Zolatanosha V, Jöns KD, Reuter D. Telecom C-band photon
emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As
layers. AIP Advances. 2023;13(5). doi:10.1063/5.0147281
apa: Deutsch, D., Buchholz, C., Zolatanosha, V., Jöns, K. D., & Reuter, D. (2023).
Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling
nanoholes in In0.52Al0.48As layers. AIP Advances, 13(5). https://doi.org/10.1063/5.0147281
bibtex: '@article{Deutsch_Buchholz_Zolatanosha_Jöns_Reuter_2023, title={Telecom
C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes
in In0.52Al0.48As layers}, volume={13}, DOI={10.1063/5.0147281},
number={5}, journal={AIP Advances}, publisher={AIP Publishing}, author={Deutsch,
Dennis and Buchholz, C. and Zolatanosha, V. and Jöns, K. D. and Reuter, Dirk},
year={2023} }'
chicago: Deutsch, Dennis, C. Buchholz, V. Zolatanosha, K. D. Jöns, and Dirk Reuter.
“Telecom C-Band Photon Emission from (In,Ga)As Quantum Dots Generated by Filling
Nanoholes in In0.52Al0.48As Layers.” AIP Advances 13, no. 5 (2023). https://doi.org/10.1063/5.0147281.
ieee: 'D. Deutsch, C. Buchholz, V. Zolatanosha, K. D. Jöns, and D. Reuter, “Telecom
C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes
in In0.52Al0.48As layers,” AIP Advances, vol. 13, no. 5, 2023, doi: 10.1063/5.0147281.'
mla: Deutsch, Dennis, et al. “Telecom C-Band Photon Emission from (In,Ga)As Quantum
Dots Generated by Filling Nanoholes in In0.52Al0.48As Layers.” AIP Advances,
vol. 13, no. 5, AIP Publishing, 2023, doi:10.1063/5.0147281.
short: D. Deutsch, C. Buchholz, V. Zolatanosha, K.D. Jöns, D. Reuter, AIP Advances
13 (2023).
date_created: 2024-12-10T07:31:41Z
date_updated: 2024-12-10T07:32:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0147281
intvolume: ' 13'
issue: '5'
language:
- iso: eng
publication: AIP Advances
publication_identifier:
issn:
- 2158-3226
publication_status: published
publisher: AIP Publishing
status: public
title: Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling
nanoholes in In0.52Al0.48As layers
type: journal_article
user_id: '42514'
volume: 13
year: '2023'
...
---
_id: '29789'
abstract:
- lang: ger
text: "Die Studieneingangsphase Physik stellt für die Studienanfänger Innen einen
komplexen Lernprozess mit vielfältigen Anforderungen auf fachlicher, Metakognitions-
und Sozialisations-Ebene dar, der ihre akademische Identitätsbildung beeinflusst
und prägt.\r\n\r\nZiel des Projektes Paderborner Studieneingangsphase Physik (PSΦ)
ist die evidenzbasierte Gestaltung eines strukturierten Studieneinstiegs und einer
in sich kohärent abgestimmten Studieneingangsphase „aus einem Guss“. Die Implementation
eines neuen Übungsformats (Präsenzübungen) in den Fachvorlesungen sowie die Unterstützung
der Studierenden im Bereich des selbstregulierten Lernens zeigen positive Effekte
in einer erhöhten Teilnahmequote sowie Zufriedenheit der Studierenden mit der
Veranstaltung, in einem aktiveren Arbeitsverhalten sowie einer höheren Bestehensquote
der Klausur. Ein messbar größerer Fachwissenserwerb konnte nicht nachgewiesen
werden. Auf Basis der Evidenzen konnten Stellschrauben für die Weiterentwicklung
sowie für die Unterstützung der Lehrenden abgeleitet werden.\r\n\r\nIn dem Beitrag
werden die Gelingensbedingungen und Strukturen für eine wirksame Zusammenarbeit
von Fachdidaktik und Fachwissenschaft am Beispiel der Überarbeitung der Studieneingangsphase
im Rahmen einer community of practice sowie der Wirksamkeit der Implementierung
diskutiert."
author:
- first_name: Anna
full_name: Bauer, Anna
id: '24755'
last_name: Bauer
orcid: 0000-0002-1742-3099
- first_name: David
full_name: Woitkowski, David
last_name: Woitkowski
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Peter
full_name: Reinhold, Peter
last_name: Reinhold
citation:
ama: 'Bauer A, Woitkowski D, Reuter D, Reinhold P. Fachliche und überfachliche Herausforderungen
in der Studieneingangsphase Physik. In: Fahr U, Kenner A, Angenent H, Eßer-Lüghausen
A, eds. Hochschullehre erforschen. . Diversität und Bildung im digitalen
Zeitalter. Springer Fachmedien; 2022:339-362. doi:10.1007/978-3-658-34185-5_19'
apa: Bauer, A., Woitkowski, D., Reuter, D., & Reinhold, P. (2022). Fachliche
und überfachliche Herausforderungen in der Studieneingangsphase Physik. In U.
Fahr, A. Kenner, H. Angenent, & A. Eßer-Lüghausen (Eds.), Hochschullehre
erforschen. (pp. 339–362). Springer Fachmedien. https://doi.org/10.1007/978-3-658-34185-5_19
bibtex: '@inbook{Bauer_Woitkowski_Reuter_Reinhold_2022, place={Wiesbaden}, series={Diversität
und Bildung im digitalen Zeitalter}, title={Fachliche und überfachliche Herausforderungen
in der Studieneingangsphase Physik}, DOI={10.1007/978-3-658-34185-5_19},
booktitle={Hochschullehre erforschen. }, publisher={Springer Fachmedien}, author={Bauer,
Anna and Woitkowski, David and Reuter, Dirk and Reinhold, Peter}, editor={Fahr,
Uwe and Kenner, Alessandra and Angenent, Holger and Eßer-Lüghausen, Alexandra},
year={2022}, pages={339–362}, collection={Diversität und Bildung im digitalen
Zeitalter} }'
chicago: 'Bauer, Anna, David Woitkowski, Dirk Reuter, and Peter Reinhold. “Fachliche
und überfachliche Herausforderungen in der Studieneingangsphase Physik.” In Hochschullehre
erforschen. , edited by Uwe Fahr, Alessandra Kenner, Holger Angenent, and
Alexandra Eßer-Lüghausen, 339–62. Diversität und Bildung im digitalen Zeitalter.
Wiesbaden: Springer Fachmedien, 2022. https://doi.org/10.1007/978-3-658-34185-5_19.'
ieee: 'A. Bauer, D. Woitkowski, D. Reuter, and P. Reinhold, “Fachliche und überfachliche
Herausforderungen in der Studieneingangsphase Physik,” in Hochschullehre erforschen.
, U. Fahr, A. Kenner, H. Angenent, and A. Eßer-Lüghausen, Eds. Wiesbaden:
Springer Fachmedien, 2022, pp. 339–362.'
mla: Bauer, Anna, et al. “Fachliche und überfachliche Herausforderungen in der Studieneingangsphase
Physik.” Hochschullehre erforschen. , edited by Uwe Fahr et al., Springer
Fachmedien, 2022, pp. 339–62, doi:10.1007/978-3-658-34185-5_19.
short: 'A. Bauer, D. Woitkowski, D. Reuter, P. Reinhold, in: U. Fahr, A. Kenner,
H. Angenent, A. Eßer-Lüghausen (Eds.), Hochschullehre erforschen. , Springer Fachmedien,
Wiesbaden, 2022, pp. 339–362.'
date_created: 2022-02-08T13:41:08Z
date_updated: 2022-02-09T07:24:35Z
department:
- _id: '299'
- _id: '651'
doi: 10.1007/978-3-658-34185-5_19
editor:
- first_name: 'Uwe '
full_name: 'Fahr, Uwe '
last_name: Fahr
- first_name: Alessandra
full_name: Kenner, Alessandra
last_name: Kenner
- first_name: Holger
full_name: Angenent, Holger
last_name: Angenent
- first_name: Alexandra
full_name: Eßer-Lüghausen, Alexandra
last_name: Eßer-Lüghausen
language:
- iso: ger
main_file_link:
- url: https://link.springer.com/chapter/10.1007/978-3-658-34185-5_19
page: 339-362
place: Wiesbaden
publication: 'Hochschullehre erforschen. '
publication_status: published
publisher: Springer Fachmedien
quality_controlled: '1'
series_title: Diversität und Bildung im digitalen Zeitalter
status: public
title: Fachliche und überfachliche Herausforderungen in der Studieneingangsphase Physik
type: book_chapter
user_id: '42514'
year: '2022'
...
---
_id: '30743'
article_number: '2102159'
author:
- first_name: Thomas
full_name: Riedl, Thomas
last_name: Riedl
- first_name: Vinay S.
full_name: Kunnathully, Vinay S.
last_name: Kunnathully
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg K. N.
full_name: Lindner, Jörg K. N.
last_name: Lindner
citation:
ama: Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner JKN. Size‐Dependent
Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars. Advanced
Materials Interfaces. Published online 2022. doi:10.1002/admi.202102159
apa: Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., & Lindner,
J. K. N. (2022). Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top
of GaAs(111)A Nanopillars. Advanced Materials Interfaces, Article 2102159.
https://doi.org/10.1002/admi.202102159
bibtex: '@article{Riedl_Kunnathully_Trapp_Langer_Reuter_Lindner_2022, title={Size‐Dependent
Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars}, DOI={10.1002/admi.202102159}, number={2102159},
journal={Advanced Materials Interfaces}, publisher={Wiley}, author={Riedl, Thomas
and Kunnathully, Vinay S. and Trapp, Alexander and Langer, Timo and Reuter, Dirk
and Lindner, Jörg K. N.}, year={2022} }'
chicago: Riedl, Thomas, Vinay S. Kunnathully, Alexander Trapp, Timo Langer, Dirk
Reuter, and Jörg K. N. Lindner. “Size‐Dependent Strain Relaxation in InAs Quantum
Dots on Top of GaAs(111)A Nanopillars.” Advanced Materials Interfaces,
2022. https://doi.org/10.1002/admi.202102159.
ieee: 'T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. K. N.
Lindner, “Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A
Nanopillars,” Advanced Materials Interfaces, Art. no. 2102159, 2022, doi:
10.1002/admi.202102159.'
mla: Riedl, Thomas, et al. “Size‐Dependent Strain Relaxation in InAs Quantum Dots
on Top of GaAs(111)A Nanopillars.” Advanced Materials Interfaces, 2102159,
Wiley, 2022, doi:10.1002/admi.202102159.
short: T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner,
Advanced Materials Interfaces (2022).
date_created: 2022-04-05T07:32:17Z
date_updated: 2022-04-05T07:34:11Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/admi.202102159
keyword:
- Mechanical Engineering
- Mechanics of Materials
language:
- iso: eng
publication: Advanced Materials Interfaces
publication_identifier:
issn:
- 2196-7350
- 2196-7350
publication_status: published
publisher: Wiley
status: public
title: Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A
Nanopillars
type: journal_article
user_id: '42514'
year: '2022'
...
---
_id: '30880'
article_number: '157401'
author:
- first_name: Michal
full_name: Kobecki, Michal
last_name: Kobecki
- first_name: Alexey V.
full_name: Scherbakov, Alexey V.
last_name: Scherbakov
- first_name: Serhii M.
full_name: Kukhtaruk, Serhii M.
last_name: Kukhtaruk
- first_name: Dmytro D.
full_name: Yaremkevich, Dmytro D.
last_name: Yaremkevich
- first_name: Tobias
full_name: Henksmeier, Tobias
last_name: Henksmeier
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Vitalyi E.
full_name: Gusev, Vitalyi E.
last_name: Gusev
- first_name: Andrey V.
full_name: Akimov, Andrey V.
last_name: Akimov
- first_name: Manfred
full_name: Bayer, Manfred
last_name: Bayer
citation:
ama: Kobecki M, Scherbakov AV, Kukhtaruk SM, et al. Giant Photoelasticity of Polaritons
for Detection of Coherent Phonons in a Superlattice with Quantum Sensitivity.
Physical Review Letters. 2022;128(15). doi:10.1103/physrevlett.128.157401
apa: Kobecki, M., Scherbakov, A. V., Kukhtaruk, S. M., Yaremkevich, D. D., Henksmeier,
T., Trapp, A., Reuter, D., Gusev, V. E., Akimov, A. V., & Bayer, M. (2022).
Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in a Superlattice
with Quantum Sensitivity. Physical Review Letters, 128(15), Article
157401. https://doi.org/10.1103/physrevlett.128.157401
bibtex: '@article{Kobecki_Scherbakov_Kukhtaruk_Yaremkevich_Henksmeier_Trapp_Reuter_Gusev_Akimov_Bayer_2022,
title={Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in
a Superlattice with Quantum Sensitivity}, volume={128}, DOI={10.1103/physrevlett.128.157401},
number={15157401}, journal={Physical Review Letters}, publisher={American Physical
Society (APS)}, author={Kobecki, Michal and Scherbakov, Alexey V. and Kukhtaruk,
Serhii M. and Yaremkevich, Dmytro D. and Henksmeier, Tobias and Trapp, Alexander
and Reuter, Dirk and Gusev, Vitalyi E. and Akimov, Andrey V. and Bayer, Manfred},
year={2022} }'
chicago: Kobecki, Michal, Alexey V. Scherbakov, Serhii M. Kukhtaruk, Dmytro D. Yaremkevich,
Tobias Henksmeier, Alexander Trapp, Dirk Reuter, Vitalyi E. Gusev, Andrey V. Akimov,
and Manfred Bayer. “Giant Photoelasticity of Polaritons for Detection of Coherent
Phonons in a Superlattice with Quantum Sensitivity.” Physical Review Letters
128, no. 15 (2022). https://doi.org/10.1103/physrevlett.128.157401.
ieee: 'M. Kobecki et al., “Giant Photoelasticity of Polaritons for Detection
of Coherent Phonons in a Superlattice with Quantum Sensitivity,” Physical Review
Letters, vol. 128, no. 15, Art. no. 157401, 2022, doi: 10.1103/physrevlett.128.157401.'
mla: Kobecki, Michal, et al. “Giant Photoelasticity of Polaritons for Detection
of Coherent Phonons in a Superlattice with Quantum Sensitivity.” Physical Review
Letters, vol. 128, no. 15, 157401, American Physical Society (APS), 2022,
doi:10.1103/physrevlett.128.157401.
short: M. Kobecki, A.V. Scherbakov, S.M. Kukhtaruk, D.D. Yaremkevich, T. Henksmeier,
A. Trapp, D. Reuter, V.E. Gusev, A.V. Akimov, M. Bayer, Physical Review Letters
128 (2022).
date_created: 2022-04-13T06:08:22Z
date_updated: 2022-04-13T06:08:53Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevlett.128.157401
intvolume: ' 128'
issue: '15'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in a
Superlattice with Quantum Sensitivity
type: journal_article
user_id: '42514'
volume: 128
year: '2022'
...
---
_id: '32108'
article_number: '126756'
author:
- first_name: T.
full_name: Henksmeier, T.
last_name: Henksmeier
- first_name: J.F.
full_name: Schulz, J.F.
last_name: Schulz
- first_name: E.
full_name: Kluth, E.
last_name: Kluth
- first_name: M.
full_name: Feneberg, M.
last_name: Feneberg
- first_name: R.
full_name: Goldhahn, R.
last_name: Goldhahn
- first_name: A.M.
full_name: Sanchez, A.M.
last_name: Sanchez
- first_name: M.
full_name: Voigt, M.
last_name: Voigt
- first_name: Guido
full_name: Grundmeier, Guido
id: '194'
last_name: Grundmeier
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of InxGa1-xAs (0 0
1) on graphene covered GaAs(0 0 1) substrates. Journal of Crystal Growth.
2022;593. doi:10.1016/j.jcrysgro.2022.126756
apa: Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sanchez,
A. M., Voigt, M., Grundmeier, G., & Reuter, D. (2022). Remote epitaxy of InxGa1-xAs
(0 0 1) on graphene covered GaAs(0 0 1) substrates. Journal of Crystal Growth,
593, Article 126756. https://doi.org/10.1016/j.jcrysgro.2022.126756
bibtex: '@article{Henksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022,
title={Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates},
volume={593}, DOI={10.1016/j.jcrysgro.2022.126756},
number={126756}, journal={Journal of Crystal Growth}, publisher={Elsevier BV},
author={Henksmeier, T. and Schulz, J.F. and Kluth, E. and Feneberg, M. and Goldhahn,
R. and Sanchez, A.M. and Voigt, M. and Grundmeier, Guido and Reuter, Dirk}, year={2022}
}'
chicago: Henksmeier, T., J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez,
M. Voigt, Guido Grundmeier, and Dirk Reuter. “Remote Epitaxy of InxGa1-XAs (0
0 1) on Graphene Covered GaAs(0 0 1) Substrates.” Journal of Crystal Growth
593 (2022). https://doi.org/10.1016/j.jcrysgro.2022.126756.
ieee: 'T. Henksmeier et al., “Remote epitaxy of InxGa1-xAs (0 0 1) on graphene
covered GaAs(0 0 1) substrates,” Journal of Crystal Growth, vol. 593, Art.
no. 126756, 2022, doi: 10.1016/j.jcrysgro.2022.126756.'
mla: Henksmeier, T., et al. “Remote Epitaxy of InxGa1-XAs (0 0 1) on Graphene Covered
GaAs(0 0 1) Substrates.” Journal of Crystal Growth, vol. 593, 126756, Elsevier
BV, 2022, doi:10.1016/j.jcrysgro.2022.126756.
short: T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez,
M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).
date_created: 2022-06-23T06:17:32Z
date_updated: 2022-06-23T06:18:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2022.126756
intvolume: ' 593'
keyword:
- Materials Chemistry
- Inorganic Chemistry
- Condensed Matter Physics
language:
- iso: eng
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates
type: journal_article
user_id: '42514'
volume: 593
year: '2022'
...
---
_id: '31241'
article_number: '126715'
author:
- first_name: A.K.
full_name: Verma, A.K.
last_name: Verma
- first_name: F.
full_name: Bopp, F.
last_name: Bopp
- first_name: J.J.
full_name: Finley, J.J.
last_name: Finley
- first_name: B.
full_name: Jonas, B.
last_name: Jonas
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Verma AK, Bopp F, Finley JJ, Jonas B, Zrenner A, Reuter D. Low Areal Densities
of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy. Journal
of Crystal Growth. Published online 2022. doi:10.1016/j.jcrysgro.2022.126715
apa: Verma, A. K., Bopp, F., Finley, J. J., Jonas, B., Zrenner, A., & Reuter,
D. (2022). Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular
Beam Epitaxy. Journal of Crystal Growth, Article 126715. https://doi.org/10.1016/j.jcrysgro.2022.126715
bibtex: '@article{Verma_Bopp_Finley_Jonas_Zrenner_Reuter_2022, title={Low Areal
Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy},
DOI={10.1016/j.jcrysgro.2022.126715},
number={126715}, journal={Journal of Crystal Growth}, publisher={Elsevier BV},
author={Verma, A.K. and Bopp, F. and Finley, J.J. and Jonas, B. and Zrenner, A.
and Reuter, Dirk}, year={2022} }'
chicago: Verma, A.K., F. Bopp, J.J. Finley, B. Jonas, A. Zrenner, and Dirk Reuter.
“Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam
Epitaxy.” Journal of Crystal Growth, 2022. https://doi.org/10.1016/j.jcrysgro.2022.126715.
ieee: 'A. K. Verma, F. Bopp, J. J. Finley, B. Jonas, A. Zrenner, and D. Reuter,
“Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam
Epitaxy,” Journal of Crystal Growth, Art. no. 126715, 2022, doi: 10.1016/j.jcrysgro.2022.126715.'
mla: Verma, A. K., et al. “Low Areal Densities of InAs Quantum Dots on GaAs(100)
Prepared by Molecular Beam Epitaxy.” Journal of Crystal Growth, 126715,
Elsevier BV, 2022, doi:10.1016/j.jcrysgro.2022.126715.
short: A.K. Verma, F. Bopp, J.J. Finley, B. Jonas, A. Zrenner, D. Reuter, Journal
of Crystal Growth (2022).
date_created: 2022-05-13T06:11:50Z
date_updated: 2022-05-13T06:12:40Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2022.126715
keyword:
- Materials Chemistry
- Inorganic Chemistry
- Condensed Matter Physics
language:
- iso: eng
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular
Beam Epitaxy
type: journal_article
user_id: '42514'
year: '2022'
...
---
_id: '31541'
article_number: '157401'
author:
- first_name: Michal
full_name: Kobecki, Michal
last_name: Kobecki
- first_name: Alexey V.
full_name: Scherbakov, Alexey V.
last_name: Scherbakov
- first_name: Serhii M.
full_name: Kukhtaruk, Serhii M.
last_name: Kukhtaruk
- first_name: Dmytro D.
full_name: Yaremkevich, Dmytro D.
last_name: Yaremkevich
- first_name: Tobias
full_name: Henksmeier, Tobias
last_name: Henksmeier
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Vitalyi E.
full_name: Gusev, Vitalyi E.
last_name: Gusev
- first_name: Andrey V.
full_name: Akimov, Andrey V.
last_name: Akimov
- first_name: Manfred
full_name: Bayer, Manfred
last_name: Bayer
citation:
ama: Kobecki M, Scherbakov AV, Kukhtaruk SM, et al. Giant Photoelasticity of Polaritons
for Detection of Coherent Phonons in a Superlattice with Quantum Sensitivity.
Physical Review Letters. 2022;128(15). doi:10.1103/physrevlett.128.157401
apa: Kobecki, M., Scherbakov, A. V., Kukhtaruk, S. M., Yaremkevich, D. D., Henksmeier,
T., Trapp, A., Reuter, D., Gusev, V. E., Akimov, A. V., & Bayer, M. (2022).
Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in a Superlattice
with Quantum Sensitivity. Physical Review Letters, 128(15), Article
157401. https://doi.org/10.1103/physrevlett.128.157401
bibtex: '@article{Kobecki_Scherbakov_Kukhtaruk_Yaremkevich_Henksmeier_Trapp_Reuter_Gusev_Akimov_Bayer_2022,
title={Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in
a Superlattice with Quantum Sensitivity}, volume={128}, DOI={10.1103/physrevlett.128.157401},
number={15157401}, journal={Physical Review Letters}, publisher={American Physical
Society (APS)}, author={Kobecki, Michal and Scherbakov, Alexey V. and Kukhtaruk,
Serhii M. and Yaremkevich, Dmytro D. and Henksmeier, Tobias and Trapp, Alexander
and Reuter, Dirk and Gusev, Vitalyi E. and Akimov, Andrey V. and Bayer, Manfred},
year={2022} }'
chicago: Kobecki, Michal, Alexey V. Scherbakov, Serhii M. Kukhtaruk, Dmytro D. Yaremkevich,
Tobias Henksmeier, Alexander Trapp, Dirk Reuter, Vitalyi E. Gusev, Andrey V. Akimov,
and Manfred Bayer. “Giant Photoelasticity of Polaritons for Detection of Coherent
Phonons in a Superlattice with Quantum Sensitivity.” Physical Review Letters
128, no. 15 (2022). https://doi.org/10.1103/physrevlett.128.157401.
ieee: 'M. Kobecki et al., “Giant Photoelasticity of Polaritons for Detection
of Coherent Phonons in a Superlattice with Quantum Sensitivity,” Physical Review
Letters, vol. 128, no. 15, Art. no. 157401, 2022, doi: 10.1103/physrevlett.128.157401.'
mla: Kobecki, Michal, et al. “Giant Photoelasticity of Polaritons for Detection
of Coherent Phonons in a Superlattice with Quantum Sensitivity.” Physical Review
Letters, vol. 128, no. 15, 157401, American Physical Society (APS), 2022,
doi:10.1103/physrevlett.128.157401.
short: M. Kobecki, A.V. Scherbakov, S.M. Kukhtaruk, D.D. Yaremkevich, T. Henksmeier,
A. Trapp, D. Reuter, V.E. Gusev, A.V. Akimov, M. Bayer, Physical Review Letters
128 (2022).
date_created: 2022-05-31T05:46:35Z
date_updated: 2022-05-31T05:47:21Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevlett.128.157401
intvolume: ' 128'
issue: '15'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Physical Review Letters
publication_identifier:
issn:
- 0031-9007
- 1079-7114
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in a
Superlattice with Quantum Sensitivity
type: journal_article
user_id: '42514'
volume: 128
year: '2022'
...
---
_id: '33332'
article_number: '2200049'
author:
- first_name: Frederik
full_name: Bopp, Frederik
last_name: Bopp
- first_name: Jonathan
full_name: Rojas, Jonathan
last_name: Rojas
- first_name: Natalia
full_name: Revenga, Natalia
last_name: Revenga
- first_name: Hubert
full_name: Riedl, Hubert
last_name: Riedl
- first_name: Friedrich
full_name: Sbresny, Friedrich
last_name: Sbresny
- first_name: Katarina
full_name: Boos, Katarina
last_name: Boos
- first_name: Tobias
full_name: Simmet, Tobias
last_name: Simmet
- first_name: Arash
full_name: Ahmadi, Arash
last_name: Ahmadi
- first_name: David
full_name: Gershoni, David
last_name: Gershoni
- first_name: Jacek
full_name: Kasprzak, Jacek
last_name: Kasprzak
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Stephan
full_name: Reitzenstein, Stephan
last_name: Reitzenstein
- first_name: Andreas
full_name: Wieck, Andreas
last_name: Wieck
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Kai
full_name: Müller, Kai
last_name: Müller
- first_name: Jonathan J.
full_name: Finley, Jonathan J.
last_name: Finley
citation:
ama: Bopp F, Rojas J, Revenga N, et al. Quantum Dot Molecule Devices with Optical
Control of Charge Status and Electronic Control of Coupling. Advanced Quantum
Technologies. Published online 2022. doi:10.1002/qute.202200049
apa: Bopp, F., Rojas, J., Revenga, N., Riedl, H., Sbresny, F., Boos, K., Simmet,
T., Ahmadi, A., Gershoni, D., Kasprzak, J., Ludwig, A., Reitzenstein, S., Wieck,
A., Reuter, D., Müller, K., & Finley, J. J. (2022). Quantum Dot Molecule Devices
with Optical Control of Charge Status and Electronic Control of Coupling. Advanced
Quantum Technologies, Article 2200049. https://doi.org/10.1002/qute.202200049
bibtex: '@article{Bopp_Rojas_Revenga_Riedl_Sbresny_Boos_Simmet_Ahmadi_Gershoni_Kasprzak_et
al._2022, title={Quantum Dot Molecule Devices with Optical Control of Charge Status
and Electronic Control of Coupling}, DOI={10.1002/qute.202200049},
number={2200049}, journal={Advanced Quantum Technologies}, publisher={Wiley},
author={Bopp, Frederik and Rojas, Jonathan and Revenga, Natalia and Riedl, Hubert
and Sbresny, Friedrich and Boos, Katarina and Simmet, Tobias and Ahmadi, Arash
and Gershoni, David and Kasprzak, Jacek and et al.}, year={2022} }'
chicago: Bopp, Frederik, Jonathan Rojas, Natalia Revenga, Hubert Riedl, Friedrich
Sbresny, Katarina Boos, Tobias Simmet, et al. “Quantum Dot Molecule Devices with
Optical Control of Charge Status and Electronic Control of Coupling.” Advanced
Quantum Technologies, 2022. https://doi.org/10.1002/qute.202200049.
ieee: 'F. Bopp et al., “Quantum Dot Molecule Devices with Optical Control
of Charge Status and Electronic Control of Coupling,” Advanced Quantum Technologies,
Art. no. 2200049, 2022, doi: 10.1002/qute.202200049.'
mla: Bopp, Frederik, et al. “Quantum Dot Molecule Devices with Optical Control of
Charge Status and Electronic Control of Coupling.” Advanced Quantum Technologies,
2200049, Wiley, 2022, doi:10.1002/qute.202200049.
short: F. Bopp, J. Rojas, N. Revenga, H. Riedl, F. Sbresny, K. Boos, T. Simmet,
A. Ahmadi, D. Gershoni, J. Kasprzak, A. Ludwig, S. Reitzenstein, A. Wieck, D.
Reuter, K. Müller, J.J. Finley, Advanced Quantum Technologies (2022).
date_created: 2022-09-12T07:17:26Z
date_updated: 2022-09-12T07:18:06Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/qute.202200049
keyword:
- Electrical and Electronic Engineering
- Computational Theory and Mathematics
- Condensed Matter Physics
- Mathematical Physics
- Nuclear and High Energy Physics
- Electronic
- Optical and Magnetic Materials
- Statistical and Nonlinear Physics
language:
- iso: eng
publication: Advanced Quantum Technologies
publication_identifier:
issn:
- 2511-9044
- 2511-9044
publication_status: published
publisher: Wiley
status: public
title: Quantum Dot Molecule Devices with Optical Control of Charge Status and Electronic
Control of Coupling
type: journal_article
user_id: '42514'
year: '2022'
...
---
_id: '35232'
article_number: '2200508'
author:
- first_name: Falco
full_name: Meier, Falco
last_name: Meier
- first_name: Mario
full_name: Littmann, Mario
last_name: Littmann
- first_name: Julius
full_name: Bürger, Julius
id: '46952'
last_name: Bürger
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Daniel
full_name: Kool, Daniel
id: '44586'
last_name: Kool
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium
Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b).
Published online 2022. doi:10.1002/pssb.202200508
apa: Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter,
D., & As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in
Nanoscopic Silicon Dioxide Masks. Physica Status Solidi (b), Article 2200508.
https://doi.org/10.1002/pssb.202200508
bibtex: '@article{Meier_Littmann_Bürger_Riedl_Kool_Lindner_Reuter_As_2022, title={Selective
Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}, DOI={10.1002/pssb.202200508}, number={2200508},
journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Falco and
Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner,
Jörg and Reuter, Dirk and As, Donat Josef}, year={2022} }'
chicago: Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool,
Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic
Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” Physica Status Solidi
(b), 2022. https://doi.org/10.1002/pssb.202200508.
ieee: 'F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in
Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no.
2200508, 2022, doi: 10.1002/pssb.202200508.'
mla: Meier, Falco, et al. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic
Silicon Dioxide Masks.” Physica Status Solidi (b), 2200508, Wiley, 2022,
doi:10.1002/pssb.202200508.
short: F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter,
D.J. As, Physica Status Solidi (b) (2022).
date_created: 2023-01-04T14:51:51Z
date_updated: 2023-01-04T14:53:24Z
department:
- _id: '15'
doi: 10.1002/pssb.202200508
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide
Masks
type: journal_article
user_id: '77496'
year: '2022'
...
---
_id: '34056'
abstract:
- lang: eng
text: ' A process sequence enabling the large-area fabrication of nanopillar-patterned
semiconductor templates for selective-area heteroepitaxy is developed. Herein,
the nanopillar tops surrounded by a SiNx mask film serve
as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such
patterned GaAs[Formula: see text]A templates is investigated by means of electron
microscopy. It is found that defect-free nanoscale InAs islands grow selectively
on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular
dark-field scanning transmission electron microscopy imaging reveals that for
a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite
phase arms extending along the lateral [Formula: see text] directions from the
central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed
vapor–liquid–solid growth on [Formula: see text] B facets, which leads to a kinetically
induced preference for the nucleation of the wurtzite phase driven by the local,
instantaneous V/III ratio, and to a concomitant reduction of surface energy of
the nanoscale diameter arms. '
article_number: '185701'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Vinay S.
full_name: Kunnathully, Vinay S.
last_name: Kunnathully
- first_name: Akshay Kumar
full_name: Verma, Akshay Kumar
id: '72998'
last_name: Verma
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Björn
full_name: Büker, Björn
last_name: Büker
- first_name: Andreas
full_name: Hütten, Andreas
last_name: Hütten
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs
nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics.
2022;132(18). doi:10.1063/5.0121559
apa: Riedl, T., Kunnathully, V. S., Verma, A. K., Langer, T., Reuter, D., Büker,
B., Hütten, A., & Lindner, J. (2022). Selective area heteroepitaxy of InAs
nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics,
132(18), Article 185701. https://doi.org/10.1063/5.0121559
bibtex: '@article{Riedl_Kunnathully_Verma_Langer_Reuter_Büker_Hütten_Lindner_2022,
title={Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned
GaAs(111)A}, volume={132}, DOI={10.1063/5.0121559},
number={18185701}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Riedl, Thomas and Kunnathully, Vinay S. and Verma, Akshay Kumar and Langer,
Timo and Reuter, Dirk and Büker, Björn and Hütten, Andreas and Lindner, Jörg},
year={2022} }'
chicago: Riedl, Thomas, Vinay S. Kunnathully, Akshay Kumar Verma, Timo Langer, Dirk
Reuter, Björn Büker, Andreas Hütten, and Jörg Lindner. “Selective Area Heteroepitaxy
of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied
Physics 132, no. 18 (2022). https://doi.org/10.1063/5.0121559.
ieee: 'T. Riedl et al., “Selective area heteroepitaxy of InAs nanostructures
on nanopillar-patterned GaAs(111)A,” Journal of Applied Physics, vol. 132,
no. 18, Art. no. 185701, 2022, doi: 10.1063/5.0121559.'
mla: Riedl, Thomas, et al. “Selective Area Heteroepitaxy of InAs Nanostructures
on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics, vol. 132,
no. 18, 185701, AIP Publishing, 2022, doi:10.1063/5.0121559.
short: T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A.
Hütten, J. Lindner, Journal of Applied Physics 132 (2022).
date_created: 2022-11-10T14:19:21Z
date_updated: 2023-01-10T12:08:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0121559
intvolume: ' 132'
issue: '18'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned
GaAs(111)A
type: journal_article
user_id: '77496'
volume: 132
year: '2022'
...
---
_id: '34053'
article_number: '2102159'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Vinay
full_name: Kunnathully, Vinay
last_name: Kunnathully
- first_name: Alexander
full_name: Trapp, Alexander
last_name: Trapp
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Kunnathully V, Trapp A, Langer T, Reuter D, Lindner J. Size‐Dependent
Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars. Advanced
Materials Interfaces. 2022;9(11). doi:10.1002/admi.202102159
apa: Riedl, T., Kunnathully, V., Trapp, A., Langer, T., Reuter, D., & Lindner,
J. (2022). Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A
Nanopillars. Advanced Materials Interfaces, 9(11), Article 2102159.
https://doi.org/10.1002/admi.202102159
bibtex: '@article{Riedl_Kunnathully_Trapp_Langer_Reuter_Lindner_2022, title={Size‐Dependent
Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars}, volume={9},
DOI={10.1002/admi.202102159},
number={112102159}, journal={Advanced Materials Interfaces}, publisher={Wiley},
author={Riedl, Thomas and Kunnathully, Vinay and Trapp, Alexander and Langer,
Timo and Reuter, Dirk and Lindner, Jörg}, year={2022} }'
chicago: Riedl, Thomas, Vinay Kunnathully, Alexander Trapp, Timo Langer, Dirk Reuter,
and Jörg Lindner. “Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top
of GaAs(111)A Nanopillars.” Advanced Materials Interfaces 9, no. 11 (2022).
https://doi.org/10.1002/admi.202102159.
ieee: 'T. Riedl, V. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. Lindner,
“Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars,”
Advanced Materials Interfaces, vol. 9, no. 11, Art. no. 2102159, 2022,
doi: 10.1002/admi.202102159.'
mla: Riedl, Thomas, et al. “Size‐Dependent Strain Relaxation in InAs Quantum Dots
on Top of GaAs(111)A Nanopillars.” Advanced Materials Interfaces, vol.
9, no. 11, 2102159, Wiley, 2022, doi:10.1002/admi.202102159.
short: T. Riedl, V. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Advanced
Materials Interfaces 9 (2022).
date_created: 2022-11-10T14:11:18Z
date_updated: 2023-01-10T12:09:09Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/admi.202102159
intvolume: ' 9'
issue: '11'
keyword:
- Mechanical Engineering
- Mechanics of Materials
language:
- iso: eng
publication: Advanced Materials Interfaces
publication_identifier:
issn:
- 2196-7350
- 2196-7350
publication_status: published
publisher: Wiley
status: public
title: Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A
Nanopillars
type: journal_article
user_id: '77496'
volume: 9
year: '2022'
...
---
_id: '36804'
article_number: '126756'
author:
- first_name: Tobias
full_name: Henksmeier, Tobias
id: '42539'
last_name: Henksmeier
- first_name: Johann Friedemann
full_name: Schulz, Johann Friedemann
last_name: Schulz
- first_name: Elias
full_name: Kluth, Elias
last_name: Kluth
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
- first_name: Ana M.
full_name: Sanchez, Ana M.
last_name: Sanchez
- first_name: Markus
full_name: Voigt, Markus
id: '15182'
last_name: Voigt
- first_name: Guido
full_name: Grundmeier, Guido
id: '194'
last_name: Grundmeier
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of In(x)Ga(1-x)As(001)
on graphene covered GaAs(001) substrates. Journal of Crystal Growth. 2022;593.
doi:10.1016/j.jcrysgro.2022.126756
apa: Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sanchez,
A. M., Voigt, M., Grundmeier, G., & Reuter, D. (2022). Remote epitaxy of In(x)Ga(1-x)As(001)
on graphene covered GaAs(001) substrates. Journal of Crystal Growth, 593,
Article 126756. https://doi.org/10.1016/j.jcrysgro.2022.126756
bibtex: '@article{Henksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022,
title={Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates},
volume={593}, DOI={10.1016/j.jcrysgro.2022.126756},
number={126756}, journal={Journal of Crystal Growth}, publisher={Elsevier}, author={Henksmeier,
Tobias and Schulz, Johann Friedemann and Kluth, Elias and Feneberg, Martin and
Goldhahn, Rüdiger and Sanchez, Ana M. and Voigt, Markus and Grundmeier, Guido
and Reuter, Dirk}, year={2022} }'
chicago: Henksmeier, Tobias, Johann Friedemann Schulz, Elias Kluth, Martin Feneberg,
Rüdiger Goldhahn, Ana M. Sanchez, Markus Voigt, Guido Grundmeier, and Dirk Reuter.
“Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene Covered GaAs(001) Substrates.”
Journal of Crystal Growth 593 (2022). https://doi.org/10.1016/j.jcrysgro.2022.126756.
ieee: 'T. Henksmeier et al., “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene
covered GaAs(001) substrates,” Journal of Crystal Growth, vol. 593, Art.
no. 126756, 2022, doi: 10.1016/j.jcrysgro.2022.126756.'
mla: Henksmeier, Tobias, et al. “Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene
Covered GaAs(001) Substrates.” Journal of Crystal Growth, vol. 593, 126756,
Elsevier, 2022, doi:10.1016/j.jcrysgro.2022.126756.
short: T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez,
M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).
date_created: 2023-01-13T15:40:17Z
date_updated: 2023-01-13T16:02:06Z
department:
- _id: '15'
- _id: '2'
- _id: '292'
- _id: '230'
doi: 10.1016/j.jcrysgro.2022.126756
intvolume: ' 593'
language:
- iso: eng
project:
- _id: '63'
name: 'TRR 142 - A6: TRR 142 - Subproject A6'
publication: Journal of Crystal Growth
publication_status: published
publisher: Elsevier
status: public
title: Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates
type: journal_article
user_id: '42539'
volume: 593
year: '2022'
...