[{"year":"2026","title":"Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection","publication_identifier":{"issn":["1094-4087"]},"author":[{"last_name":"Spedt","first_name":"Vladimir","full_name":"Spedt, Vladimir"},{"last_name":"Meier","first_name":"Falco","full_name":"Meier, Falco"},{"full_name":"Geromel, René","last_name":"Geromel","first_name":"René"},{"first_name":"Pascal","last_name":"Mahler","full_name":"Mahler, Pascal"},{"full_name":"Henksmeier, Tobias","first_name":"Tobias","last_name":"Henksmeier","id":"42539"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"id":"30525","full_name":"Zentgraf, Thomas","first_name":"Thomas","orcid":"0000-0002-8662-1101","last_name":"Zentgraf"},{"id":"20798","first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik"}],"publication_status":"published","date_updated":"2026-08-06T12:18:58Z","article_type":"original","intvolume":"        34","article_number":"30335","language":[{"iso":"eng"}],"doi":"10.1364/oe.601288","issue":"16","publication":"Optics Express","abstract":[{"lang":"eng","text":"<jats:p>Efficient detection of near-infrared light at telecommunication wavelengths remains a central challenge for GaAs-based photonic and optoelectronic devices due to the absence of linear absorption below the bandgap. Here, we demonstrate a hybrid nonlinear optoelectronic device that enhances the detection efficiency of a (001)-oriented GaAs PIN photodiode under telecommunication-wavelength illumination, where absorption is intrinsically limited to two-photon absorption (2PA). Our approach relies on the integration of a transferred, nanopatterned 385 nm-thick (111)-oriented GaAs nanofilm acting as an on-chip nonlinear frequency-conversion layer. Elliptical GaAs nanoresonators are employed to enhance second-harmonic generation (SHG) resonantly, converting incident 1550 nm radiation into above-bandgap photons efficiently absorbed by the underlying diode. Spatially resolved current–voltage measurements reveal a pronounced enhancement of the detector response in regions covered by the nanoantennas. The device exhibits a low dark current, while the metasurface-covered regions show the largest current response under 1560 nm excitation compared to the bare GaAs(100) diode and the unstructured GaAs(111) film. These results establish a direct functional link between dielectric metasurface–based nonlinear frequency conversion and electrical photodetection, providing a viable route toward integrated sub-bandgap detection schemes.</jats:p>"}],"file":[{"file_id":"66675","content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2026-08-06T12:18:22Z","file_name":"oe-34-16-30335.pdf","access_level":"closed","file_size":2894783,"date_created":"2026-08-06T12:18:22Z","creator":"cedrikm"}],"date_created":"2026-08-06T12:15:59Z","type":"journal_article","department":[{"_id":"15"}],"status":"public","has_accepted_license":"1","publisher":"Optica Publishing Group","_id":"66674","user_id":"20798","ddc":["530"],"volume":34,"file_date_updated":"2026-08-06T12:18:22Z","citation":{"apa":"Spedt, V., Meier, F., Geromel, R., Mahler, P., Henksmeier, T., Reuter, D., Zentgraf, T., &#38; Meier, C. (2026). Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection. <i>Optics Express</i>, <i>34</i>(16), Article 30335. <a href=\"https://doi.org/10.1364/oe.601288\">https://doi.org/10.1364/oe.601288</a>","ieee":"V. Spedt <i>et al.</i>, “Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection,” <i>Optics Express</i>, vol. 34, no. 16, Art. no. 30335, 2026, doi: <a href=\"https://doi.org/10.1364/oe.601288\">10.1364/oe.601288</a>.","short":"V. Spedt, F. Meier, R. Geromel, P. Mahler, T. Henksmeier, D. Reuter, T. Zentgraf, C. Meier, Optics Express 34 (2026).","chicago":"Spedt, Vladimir, Falco Meier, René Geromel, Pascal Mahler, Tobias Henksmeier, Dirk Reuter, Thomas Zentgraf, and Cedrik Meier. “Hybrid GaAs (111)/GaAs (100) PIN Photodiodes for Metasurface-Assisted Nonlinear Upconversion Detection.” <i>Optics Express</i> 34, no. 16 (2026). <a href=\"https://doi.org/10.1364/oe.601288\">https://doi.org/10.1364/oe.601288</a>.","mla":"Spedt, Vladimir, et al. “Hybrid GaAs (111)/GaAs (100) PIN Photodiodes for Metasurface-Assisted Nonlinear Upconversion Detection.” <i>Optics Express</i>, vol. 34, no. 16, 30335, Optica Publishing Group, 2026, doi:<a href=\"https://doi.org/10.1364/oe.601288\">10.1364/oe.601288</a>.","ama":"Spedt V, Meier F, Geromel R, et al. Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection. <i>Optics Express</i>. 2026;34(16). doi:<a href=\"https://doi.org/10.1364/oe.601288\">10.1364/oe.601288</a>","bibtex":"@article{Spedt_Meier_Geromel_Mahler_Henksmeier_Reuter_Zentgraf_Meier_2026, title={Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection}, volume={34}, DOI={<a href=\"https://doi.org/10.1364/oe.601288\">10.1364/oe.601288</a>}, number={1630335}, journal={Optics Express}, publisher={Optica Publishing Group}, author={Spedt, Vladimir and Meier, Falco and Geromel, René and Mahler, Pascal and Henksmeier, Tobias and Reuter, Dirk and Zentgraf, Thomas and Meier, Cedrik}, year={2026} }"},"quality_controlled":"1","project":[{"name":"TRR 142 - Project Area B","_id":"55"},{"name":"TRR 142; TP B09: Effiziente Erzeugung mit maßgeschneiderter optischer Phaselage der zweiten Harmonischen mittels Quasi-gebundener Zustände in GaAs Metaoberflächen","_id":"170"}]},{"status":"public","year":"2024","title":"Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy","author":[{"id":"42539","last_name":"Henksmeier","first_name":"Tobias","full_name":"Henksmeier, Tobias"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"}],"date_updated":"2024-12-10T07:45:56Z","_id":"57678","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.48550/ARXIV.2410.15487","publication":"Communications materials","citation":{"short":"T. Henksmeier, D. Reuter, Communications Materials (2024).","chicago":"Henksmeier, Tobias, and Dirk Reuter. “Low-Temperature Fabrication of Amorphous Carbon Films as a Universal Template for Remote Epitaxy.” <i>Communications Materials</i>, 2024. <a href=\"https://doi.org/10.48550/ARXIV.2410.15487\">https://doi.org/10.48550/ARXIV.2410.15487</a>.","ieee":"T. Henksmeier and D. Reuter, “Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy,” <i>Communications materials</i>, 2024, doi: <a href=\"https://doi.org/10.48550/ARXIV.2410.15487\">10.48550/ARXIV.2410.15487</a>.","apa":"Henksmeier, T., &#38; Reuter, D. (2024). Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy. <i>Communications Materials</i>. <a href=\"https://doi.org/10.48550/ARXIV.2410.15487\">https://doi.org/10.48550/ARXIV.2410.15487</a>","bibtex":"@article{Henksmeier_Reuter_2024, title={Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy}, DOI={<a href=\"https://doi.org/10.48550/ARXIV.2410.15487\">10.48550/ARXIV.2410.15487</a>}, journal={Communications materials}, author={Henksmeier, Tobias and Reuter, Dirk}, year={2024} }","ama":"Henksmeier T, Reuter D. Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy. <i>Communications materials</i>. Published online 2024. doi:<a href=\"https://doi.org/10.48550/ARXIV.2410.15487\">10.48550/ARXIV.2410.15487</a>","mla":"Henksmeier, Tobias, and Dirk Reuter. “Low-Temperature Fabrication of Amorphous Carbon Films as a Universal Template for Remote Epitaxy.” <i>Communications Materials</i>, 2024, doi:<a href=\"https://doi.org/10.48550/ARXIV.2410.15487\">10.48550/ARXIV.2410.15487</a>."},"date_created":"2024-12-10T07:42:57Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"volume":593,"doi":"10.1016/j.jcrysgro.2022.126756","user_id":"42539","language":[{"iso":"eng"}],"_id":"36804","publisher":"Elsevier","article_number":"126756","intvolume":"       593","date_updated":"2023-01-13T16:02:06Z","publication_status":"published","author":[{"full_name":"Henksmeier, Tobias","first_name":"Tobias","last_name":"Henksmeier","id":"42539"},{"full_name":"Schulz, Johann Friedemann","last_name":"Schulz","first_name":"Johann Friedemann"},{"first_name":"Elias","last_name":"Kluth","full_name":"Kluth, Elias"},{"full_name":"Feneberg, Martin","last_name":"Feneberg","first_name":"Martin"},{"first_name":"Rüdiger","last_name":"Goldhahn","full_name":"Goldhahn, Rüdiger"},{"last_name":"Sanchez","first_name":"Ana M.","full_name":"Sanchez, Ana M."},{"id":"15182","first_name":"Markus","last_name":"Voigt","full_name":"Voigt, Markus"},{"id":"194","full_name":"Grundmeier, Guido","last_name":"Grundmeier","first_name":"Guido"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"}],"year":"2022","status":"public","title":"Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates","department":[{"_id":"15"},{"_id":"2"},{"_id":"292"},{"_id":"230"}],"type":"journal_article","date_created":"2023-01-13T15:40:17Z","project":[{"name":"TRR 142 - A6: TRR 142 - Subproject A6","_id":"63"}],"citation":{"mla":"Henksmeier, Tobias, et al. “Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene Covered GaAs(001) Substrates.” <i>Journal of Crystal Growth</i>, vol. 593, 126756, Elsevier, 2022, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>.","apa":"Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sanchez, A. M., Voigt, M., Grundmeier, G., &#38; Reuter, D. (2022). Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates. <i>Journal of Crystal Growth</i>, <i>593</i>, Article 126756. <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>","ieee":"T. Henksmeier <i>et al.</i>, “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates,” <i>Journal of Crystal Growth</i>, vol. 593, Art. no. 126756, 2022, doi: <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>.","chicago":"Henksmeier, Tobias, Johann Friedemann Schulz, Elias Kluth, Martin Feneberg, Rüdiger Goldhahn, Ana M. Sanchez, Markus Voigt, Guido Grundmeier, and Dirk Reuter. “Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene Covered GaAs(001) Substrates.” <i>Journal of Crystal Growth</i> 593 (2022). <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>.","ama":"Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates. <i>Journal of Crystal Growth</i>. 2022;593. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>","short":"T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).","bibtex":"@article{Henksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022, title={Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates}, volume={593}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>}, number={126756}, journal={Journal of Crystal Growth}, publisher={Elsevier}, author={Henksmeier, Tobias and Schulz, Johann Friedemann and Kluth, Elias and Feneberg, Martin and Goldhahn, Rüdiger and Sanchez, Ana M. and Voigt, Markus and Grundmeier, Guido and Reuter, Dirk}, year={2022} }"},"publication":"Journal of Crystal Growth"}]