---
_id: '66674'
abstract:
- lang: eng
  text: <jats:p>Efficient detection of near-infrared light at telecommunication wavelengths
    remains a central challenge for GaAs-based photonic and optoelectronic devices
    due to the absence of linear absorption below the bandgap. Here, we demonstrate
    a hybrid nonlinear optoelectronic device that enhances the detection efficiency
    of a (001)-oriented GaAs PIN photodiode under telecommunication-wavelength illumination,
    where absorption is intrinsically limited to two-photon absorption (2PA). Our
    approach relies on the integration of a transferred, nanopatterned 385 nm-thick
    (111)-oriented GaAs nanofilm acting as an on-chip nonlinear frequency-conversion
    layer. Elliptical GaAs nanoresonators are employed to enhance second-harmonic
    generation (SHG) resonantly, converting incident 1550 nm radiation into above-bandgap
    photons efficiently absorbed by the underlying diode. Spatially resolved current–voltage
    measurements reveal a pronounced enhancement of the detector response in regions
    covered by the nanoantennas. The device exhibits a low dark current, while the
    metasurface-covered regions show the largest current response under 1560 nm excitation
    compared to the bare GaAs(100) diode and the unstructured GaAs(111) film. These
    results establish a direct functional link between dielectric metasurface–based
    nonlinear frequency conversion and electrical photodetection, providing a viable
    route toward integrated sub-bandgap detection schemes.</jats:p>
article_number: '30335'
article_type: original
author:
- first_name: Vladimir
  full_name: Spedt, Vladimir
  last_name: Spedt
- first_name: Falco
  full_name: Meier, Falco
  last_name: Meier
- first_name: René
  full_name: Geromel, René
  last_name: Geromel
- first_name: Pascal
  full_name: Mahler, Pascal
  last_name: Mahler
- first_name: Tobias
  full_name: Henksmeier, Tobias
  id: '42539'
  last_name: Henksmeier
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Thomas
  full_name: Zentgraf, Thomas
  id: '30525'
  last_name: Zentgraf
  orcid: 0000-0002-8662-1101
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
citation:
  ama: Spedt V, Meier F, Geromel R, et al. Hybrid GaAs (111)/GaAs (100) PIN photodiodes
    for metasurface-assisted nonlinear upconversion detection. <i>Optics Express</i>.
    2026;34(16). doi:<a href="https://doi.org/10.1364/oe.601288">10.1364/oe.601288</a>
  apa: Spedt, V., Meier, F., Geromel, R., Mahler, P., Henksmeier, T., Reuter, D.,
    Zentgraf, T., &#38; Meier, C. (2026). Hybrid GaAs (111)/GaAs (100) PIN photodiodes
    for metasurface-assisted nonlinear upconversion detection. <i>Optics Express</i>,
    <i>34</i>(16), Article 30335. <a href="https://doi.org/10.1364/oe.601288">https://doi.org/10.1364/oe.601288</a>
  bibtex: '@article{Spedt_Meier_Geromel_Mahler_Henksmeier_Reuter_Zentgraf_Meier_2026,
    title={Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear
    upconversion detection}, volume={34}, DOI={<a href="https://doi.org/10.1364/oe.601288">10.1364/oe.601288</a>},
    number={1630335}, journal={Optics Express}, publisher={Optica Publishing Group},
    author={Spedt, Vladimir and Meier, Falco and Geromel, René and Mahler, Pascal
    and Henksmeier, Tobias and Reuter, Dirk and Zentgraf, Thomas and Meier, Cedrik},
    year={2026} }'
  chicago: Spedt, Vladimir, Falco Meier, René Geromel, Pascal Mahler, Tobias Henksmeier,
    Dirk Reuter, Thomas Zentgraf, and Cedrik Meier. “Hybrid GaAs (111)/GaAs (100)
    PIN Photodiodes for Metasurface-Assisted Nonlinear Upconversion Detection.” <i>Optics
    Express</i> 34, no. 16 (2026). <a href="https://doi.org/10.1364/oe.601288">https://doi.org/10.1364/oe.601288</a>.
  ieee: 'V. Spedt <i>et al.</i>, “Hybrid GaAs (111)/GaAs (100) PIN photodiodes for
    metasurface-assisted nonlinear upconversion detection,” <i>Optics Express</i>,
    vol. 34, no. 16, Art. no. 30335, 2026, doi: <a href="https://doi.org/10.1364/oe.601288">10.1364/oe.601288</a>.'
  mla: Spedt, Vladimir, et al. “Hybrid GaAs (111)/GaAs (100) PIN Photodiodes for Metasurface-Assisted
    Nonlinear Upconversion Detection.” <i>Optics Express</i>, vol. 34, no. 16, 30335,
    Optica Publishing Group, 2026, doi:<a href="https://doi.org/10.1364/oe.601288">10.1364/oe.601288</a>.
  short: V. Spedt, F. Meier, R. Geromel, P. Mahler, T. Henksmeier, D. Reuter, T. Zentgraf,
    C. Meier, Optics Express 34 (2026).
date_created: 2026-08-06T12:15:59Z
date_updated: 2026-08-06T12:18:58Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1364/oe.601288
file:
- access_level: closed
  content_type: application/pdf
  creator: cedrikm
  date_created: 2026-08-06T12:18:22Z
  date_updated: 2026-08-06T12:18:22Z
  file_id: '66675'
  file_name: oe-34-16-30335.pdf
  file_size: 2894783
  relation: main_file
  success: 1
file_date_updated: 2026-08-06T12:18:22Z
has_accepted_license: '1'
intvolume: '        34'
issue: '16'
language:
- iso: eng
project:
- _id: '55'
  name: TRR 142 - Project Area B
- _id: '170'
  name: 'TRR 142; TP B09: Effiziente Erzeugung mit maßgeschneiderter optischer Phaselage
    der zweiten Harmonischen mittels Quasi-gebundener Zustände in GaAs Metaoberflächen'
publication: Optics Express
publication_identifier:
  issn:
  - 1094-4087
publication_status: published
publisher: Optica Publishing Group
quality_controlled: '1'
status: public
title: Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear
  upconversion detection
type: journal_article
user_id: '20798'
volume: 34
year: '2026'
...
---
_id: '57678'
author:
- first_name: Tobias
  full_name: Henksmeier, Tobias
  id: '42539'
  last_name: Henksmeier
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
citation:
  ama: Henksmeier T, Reuter D. Low-temperature fabrication of amorphous carbon films
    as a universal template for remote epitaxy. <i>Communications materials</i>. Published
    online 2024. doi:<a href="https://doi.org/10.48550/ARXIV.2410.15487">10.48550/ARXIV.2410.15487</a>
  apa: Henksmeier, T., &#38; Reuter, D. (2024). Low-temperature fabrication of amorphous
    carbon films as a universal template for remote epitaxy. <i>Communications Materials</i>.
    <a href="https://doi.org/10.48550/ARXIV.2410.15487">https://doi.org/10.48550/ARXIV.2410.15487</a>
  bibtex: '@article{Henksmeier_Reuter_2024, title={Low-temperature fabrication of
    amorphous carbon films as a universal template for remote epitaxy}, DOI={<a href="https://doi.org/10.48550/ARXIV.2410.15487">10.48550/ARXIV.2410.15487</a>},
    journal={Communications materials}, author={Henksmeier, Tobias and Reuter, Dirk},
    year={2024} }'
  chicago: Henksmeier, Tobias, and Dirk Reuter. “Low-Temperature Fabrication of Amorphous
    Carbon Films as a Universal Template for Remote Epitaxy.” <i>Communications Materials</i>,
    2024. <a href="https://doi.org/10.48550/ARXIV.2410.15487">https://doi.org/10.48550/ARXIV.2410.15487</a>.
  ieee: 'T. Henksmeier and D. Reuter, “Low-temperature fabrication of amorphous carbon
    films as a universal template for remote epitaxy,” <i>Communications materials</i>,
    2024, doi: <a href="https://doi.org/10.48550/ARXIV.2410.15487">10.48550/ARXIV.2410.15487</a>.'
  mla: Henksmeier, Tobias, and Dirk Reuter. “Low-Temperature Fabrication of Amorphous
    Carbon Films as a Universal Template for Remote Epitaxy.” <i>Communications Materials</i>,
    2024, doi:<a href="https://doi.org/10.48550/ARXIV.2410.15487">10.48550/ARXIV.2410.15487</a>.
  short: T. Henksmeier, D. Reuter, Communications Materials (2024).
date_created: 2024-12-10T07:42:57Z
date_updated: 2024-12-10T07:45:56Z
department:
- _id: '15'
- _id: '230'
doi: 10.48550/ARXIV.2410.15487
language:
- iso: eng
publication: Communications materials
status: public
title: Low-temperature fabrication of amorphous carbon films as a universal template
  for remote epitaxy
type: journal_article
user_id: '42514'
year: '2024'
...
---
_id: '36804'
article_number: '126756'
author:
- first_name: Tobias
  full_name: Henksmeier, Tobias
  id: '42539'
  last_name: Henksmeier
- first_name: Johann Friedemann
  full_name: Schulz, Johann Friedemann
  last_name: Schulz
- first_name: Elias
  full_name: Kluth, Elias
  last_name: Kluth
- first_name: Martin
  full_name: Feneberg, Martin
  last_name: Feneberg
- first_name: Rüdiger
  full_name: Goldhahn, Rüdiger
  last_name: Goldhahn
- first_name: Ana M.
  full_name: Sanchez, Ana M.
  last_name: Sanchez
- first_name: Markus
  full_name: Voigt, Markus
  id: '15182'
  last_name: Voigt
- first_name: Guido
  full_name: Grundmeier, Guido
  id: '194'
  last_name: Grundmeier
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
citation:
  ama: Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of In(x)Ga(1-x)As(001)
    on graphene covered GaAs(001) substrates. <i>Journal of Crystal Growth</i>. 2022;593.
    doi:<a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">10.1016/j.jcrysgro.2022.126756</a>
  apa: Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sanchez,
    A. M., Voigt, M., Grundmeier, G., &#38; Reuter, D. (2022). Remote epitaxy of In(x)Ga(1-x)As(001)
    on graphene covered GaAs(001) substrates. <i>Journal of Crystal Growth</i>, <i>593</i>,
    Article 126756. <a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>
  bibtex: '@article{Henksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022,
    title={Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates},
    volume={593}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">10.1016/j.jcrysgro.2022.126756</a>},
    number={126756}, journal={Journal of Crystal Growth}, publisher={Elsevier}, author={Henksmeier,
    Tobias and Schulz, Johann Friedemann and Kluth, Elias and Feneberg, Martin and
    Goldhahn, Rüdiger and Sanchez, Ana M. and Voigt, Markus and Grundmeier, Guido
    and Reuter, Dirk}, year={2022} }'
  chicago: Henksmeier, Tobias, Johann Friedemann Schulz, Elias Kluth, Martin Feneberg,
    Rüdiger Goldhahn, Ana M. Sanchez, Markus Voigt, Guido Grundmeier, and Dirk Reuter.
    “Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene Covered GaAs(001) Substrates.”
    <i>Journal of Crystal Growth</i> 593 (2022). <a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>.
  ieee: 'T. Henksmeier <i>et al.</i>, “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene
    covered GaAs(001) substrates,” <i>Journal of Crystal Growth</i>, vol. 593, Art.
    no. 126756, 2022, doi: <a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">10.1016/j.jcrysgro.2022.126756</a>.'
  mla: Henksmeier, Tobias, et al. “Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene
    Covered GaAs(001) Substrates.” <i>Journal of Crystal Growth</i>, vol. 593, 126756,
    Elsevier, 2022, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">10.1016/j.jcrysgro.2022.126756</a>.
  short: T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez,
    M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).
date_created: 2023-01-13T15:40:17Z
date_updated: 2023-01-13T16:02:06Z
department:
- _id: '15'
- _id: '2'
- _id: '292'
- _id: '230'
doi: 10.1016/j.jcrysgro.2022.126756
intvolume: '       593'
language:
- iso: eng
project:
- _id: '63'
  name: 'TRR 142 - A6: TRR 142 - Subproject A6'
publication: Journal of Crystal Growth
publication_status: published
publisher: Elsevier
status: public
title: Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates
type: journal_article
user_id: '42539'
volume: 593
year: '2022'
...