@article{27099, abstract = {{In our work, we have engineered low capacitance single quantum dot photodiodes as sensor devices for the optoelectronic sampling of ultrafast electric signals. By the Stark effect, a time-dependent electric signal is converted into a time-dependent shift of the transition energy. This shift is measured accurately by resonant ps laser spectroscopy with photocurrent detection. In our experiments, we sample the laser synchronous output pulse of an ultrafast CMOS circuit with high resolution. With our quantum dot sensor device, we were able to sample transients below 20 ps with a voltage resolution in the mV-range.}}, author = {{Widhalm, Alex and Krehs, Sebastian and Siebert, Dustin and Sharma, Nand Lal and Langer, Timo and Jonas, Björn and Reuter, Dirk and Thiede, Andreas and Förstner, Jens and Zrenner, Artur}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{tet_topic_qd}}, pages = {{181109}}, title = {{{Optoelectronic sampling of ultrafast electric transients with single quantum dots}}}, doi = {{10.1063/5.0061358}}, volume = {{119}}, year = {{2021}}, } @article{17322, author = {{Mukherjee, Amlan and Widhalm, Alex and Siebert, Dustin and Krehs, Sebastian and Sharma, Nandlal and Thiede, Andreas and Reuter, Dirk and Förstner, Jens and Zrenner, Artur}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{tet_topic_qd}}, pages = {{251103}}, title = {{{Electrically controlled rapid adiabatic passage in a single quantum dot}}}, doi = {{10.1063/5.0012257}}, volume = {{116}}, year = {{2020}}, } @inproceedings{39966, author = {{Förstner, Jens and Widhalm, A. and Mukherjee, A. and Krehs, S. and Jonas, B. and Spychala, K. and Förstner, Jens and Thiede, Andreas and Reuter, Dirk and Zrenner, Artur}}, booktitle = {{11th International Conference on Quantum Dots}}, title = {{{Ultrafast electric control of a single QD exciton}}}, year = {{2020}}, } @article{39649, abstract = {{Metal-semiconductor and junction n-channel field-effect transistors (MESFETs and JFETs) have been fabricated on glass substrates using room temperature deposited amorphous zinc-tin oxide (ZTO) channel layers. Characteristics of transistors and inverter circuits are compared. Best FET devices exhibit ON-to- OFF current ratios over eight orders of magnitude, subthreshold swings as low as 250 mV/dec and field-effect mobilities of 5 cm 2 /Vs. Furthermore, all devices show long-term stability over a period of more than 200 days. Inverters fabricated using either MESFETs or JFETs exhibit remarkable peak gain magnitude values of 350 and voltage uncertainty levels as low as 260 mV for an operating voltage of 5 V. A Schottky diode FET logic (SDFL) approach is applied to shift the switching voltage which is a requirement for cascading of inverters for realization of ring oscillators.}}, author = {{Lahr, Oliver and Zhang, Zhipeng and Grotjahn, Frank and Schlupp, Peter and Vogt, Sofie and von Wenckstern, Holger and Thiede, Andreas and Grundmann, Marius}}, issn = {{0018-9383}}, journal = {{IEEE Transactions on Electron Devices}}, keywords = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}}, number = {{8}}, pages = {{3376--3381}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs}}}, doi = {{10.1109/ted.2019.2922696}}, volume = {{66}}, year = {{2019}}, } @article{3427, abstract = {{We report on the coherent phase manipulation of quantum dot excitons by electric means. For our experiments, we use a low capacitance single quantum dot photodiode which is electrically controlled by a custom designed SiGe:C BiCMOS chip. The phase manipulation is performed and quantified in a Ramsey experiment, where ultrafast transient detuning of the exciton energy is performed synchronous to double pulse p/2 ps laser excitation. We are able to demonstrate electrically controlled phase manipulations with magnitudes up to 3p within 100 ps which is below the dephasing time of the quantum dot exciton.}}, author = {{Widhalm, Alex and Mukherjee, Amlan and Krehs, Sebastian and Sharma, Nandlal and Kölling, Peter and Thiede, Andreas and Reuter, Dirk and Förstner, Jens and Zrenner, Artur}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{tet_topic_qd}}, number = {{11}}, pages = {{111105}}, title = {{{Ultrafast electric phase control of a single exciton qubit}}}, doi = {{10.1063/1.5020364}}, volume = {{112}}, year = {{2018}}, } @inproceedings{39651, author = {{Meister, Tilo and Ellinger, Frank and Bartha, Johann W. and Berroth, Manfred and Burghartz, Joachim and Claus, Martin and Frey, Lothar and Gagliardi, Alessio and Grundmann, Marius and Hesselbarth, Jan and Klauk, Hagen and Leo, Karl and Lugli, Paolo and Mannsfeld, Stefan and Manoli, Yiannos and Negra, Renato and Neumaier, Daniel and Pfeiffer, Ullrich and Riedl, Thomas and Scheinert, Susanne and Scherf, Ullrich and Thiede, Andreas and Troster, Gerhard and Vossiek, Martin and Weigel, Robert and Wenger, Christian and Alavi, Golzar and Becherer, Markus and Chavarin, Carlos Alvarado and Darwish, Mohammed and Ellinger, Martin and Fan, Chun-Yu and Fritsch, Martin and Grotjahn, Frank and Gunia, Marco and Haase, Katherina and Hillger, Philipp and Ishida, Koichi and Jank, Michael and Knobelspies, Stefan and Kuhl, Matthias and Lupina, Grzegorz and Naghadeh, Shabnam Mohammadi and Munzenrieder, Niko and Ozbek, Sefa and Rasteh, Mahsa and Salvatore, Giovanni A. and Schrufer, Daniel and Strobel, Carsten and Theisen, Manuel and Tuckmantel, Christian and von Wenckstern, Holger and Wang, Zhenxing and Zhang, Zhipeng}}, booktitle = {{2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)}}, publisher = {{IEEE}}, title = {{{Program FFlexCom — High frequency flexible bendable electronics for wireless communication systems}}}, doi = {{10.1109/comcas.2017.8244733}}, year = {{2018}}, } @inproceedings{39654, author = {{Ali, U. and Bober, M. and Thiede, Andreas}}, booktitle = {{2016 11th European Microwave Integrated Circuits Conference (EuMIC)}}, publisher = {{IEEE}}, title = {{{Design of voltage controlled oscillators (VCOs) in D-band and their phase noise measurements using frequency down-conversion}}}, doi = {{10.1109/eumic.2016.7777554}}, year = {{2016}}, } @inproceedings{41915, author = {{Ali, U. and Bober, M. and Thiede, Andreas}}, booktitle = {{2016 German Microwave Conference (GeMiC)}}, publisher = {{IEEE}}, title = {{{An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology}}}, doi = {{10.1109/gemic.2016.7461611}}, year = {{2016}}, } @article{41866, author = {{Russer, Johannes A. and Uddin, Nasir and Awny, Ahmed Sanaa and Thiede, Andreas and Russer, Peter}}, issn = {{2162-2264}}, journal = {{IEEE Electromagnetic Compatibility Magazine}}, keywords = {{Electrical and Electronic Engineering, Computer Networks and Communications, Instrumentation, Signal Processing, Software}}, number = {{3}}, pages = {{79--85}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Near-field measurement of stochastic electromagnetic fields}}}, doi = {{10.1109/memc.2015.7336761}}, volume = {{4}}, year = {{2015}}, } @inproceedings{41918, author = {{Ali, U. and Bober, M. and Thiede, Andreas and Awny, A. and Fischer, G.}}, booktitle = {{2015 German Microwave Conference}}, publisher = {{IEEE}}, title = {{{High speed static frequency divider design with 111.6 GHz self-oscillation frequency (SOF) in 0.13 µm SiGe BiCMOS technology}}}, doi = {{10.1109/gemic.2015.7107798}}, year = {{2015}}, } @inproceedings{41917, author = {{Ali, U. and Fischer, G. and Thiede, Andreas}}, booktitle = {{2015 German Microwave Conference}}, publisher = {{IEEE}}, title = {{{Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology}}}, doi = {{10.1109/gemic.2015.7107827}}, year = {{2015}}, } @article{24310, abstract = {{A millimeter wave frequency mixed-signal design of a 1-tap half-rate look-ahead decision feedback equalizer for 80 Gb/s short-reach optical communication systems is presented. On-wafer tests are developed to determine the maximum operating bit rate of the equalizer. Results are also presented for intersymbol interference mitigation at 80 Gb/s for a 20 GHz bandwidth-limited channel. Further improvements on the architecture of the 80 Gb/s equalizer are discussed and used in the design and on-wafer measurement of a 110 Gb/s equalizer. The equalizers are designed in a 0.13 μm SiGe:C BiCMOS technology. The 80 and 110 Gb/s versions dissipate 4 and 5.75 W, respectively and occupy 2 and 2.56 mm 2 , respectively.}}, author = {{Awny, Ahmed and Möller, Lothar and Junio, Josef and Scheytt, Christoph and Thiede, Andreas}}, issn = {{1558-173X}}, journal = {{IEEE JOURNAL OF SOLID-STATE CIRCUITS}}, number = {{No.2}}, pages = {{452--470}}, title = {{{Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer}}}, doi = {{10.1109/JSSC.2013.2285385}}, volume = {{Vol.49}}, year = {{2014}}, } @inproceedings{24351, abstract = {{We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology, enables error-free data recovery of heavily distorted signals transmitted at a bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer reported yet utilizes a novel 1-tap look-ahead architecture.}}, author = {{Möller, Lothar and Awny, Ahmed and Junio, Josef and Scheytt, Christoph and Thiede, Andreas}}, booktitle = {{Optical Fiber Communication Conference}}, title = {{{80 Gb/s Decision Feedback Equalizer for Intersymbol Interference}}}, doi = {{10.1364/OFC.2013.OW4B.2 }}, year = {{2013}}, } @inproceedings{41919, author = {{Ali, U. and Thiede, Andreas}}, booktitle = {{2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)}}, publisher = {{IEEE}}, title = {{{A millimeter wave quad-phase ring oscillator using 0.13 µm SiGe BiCMOS HBT technology}}}, doi = {{10.1109/iscdg.2013.6656297}}, year = {{2013}}, }