[{"publication":"Applied Physics Letters","abstract":[{"text":"In our work, we have engineered low capacitance single quantum dot photodiodes as sensor devices for the optoelectronic sampling of ultrafast electric signals. By the Stark effect, a time-dependent electric signal is converted into a time-dependent shift of the transition energy. This shift is measured accurately by resonant ps laser spectroscopy with photocurrent detection. In our experiments, we sample the laser synchronous output pulse of an ultrafast CMOS circuit with high resolution. With our quantum dot sensor device, we were able to sample transients below 20 ps with a voltage resolution in the mV-range.","lang":"eng"}],"file":[{"embargo_to":"open_access","content_type":"application/pdf","relation":"main_file","date_updated":"2021-11-04T13:46:27Z","creator":"fossie","date_created":"2021-11-04T13:46:27Z","file_size":1999652,"file_id":"27157","embargo":"2022-11-04","file_name":"2021-11 Widhalm - APL - Optoelectronic sampling of ultrafast electric transients with single quantum dots (published version).pdf","access_level":"local"}],"keyword":["tet_topic_qd"],"ddc":["530"],"language":[{"iso":"eng"}],"year":"2021","date_created":"2021-11-03T10:32:03Z","title":"Optoelectronic sampling of ultrafast electric transients with single quantum dots","type":"journal_article","status":"public","_id":"27099","project":[{"_id":"74","name":"TRR 142 - Subproject C4"},{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"},{"_id":"60","name":"TRR 142 - Subproject A3"}],"department":[{"_id":"15"},{"_id":"230"},{"_id":"61"},{"_id":"51"}],"user_id":"158","file_date_updated":"2021-11-04T13:46:27Z","has_accepted_license":"1","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","intvolume":"       119","page":"181109","citation":{"ieee":"A. Widhalm <i>et al.</i>, “Optoelectronic sampling of ultrafast electric transients with single quantum dots,” <i>Applied Physics Letters</i>, vol. 119, p. 181109, 2021, doi: <a href=\"https://doi.org/10.1063/5.0061358\">10.1063/5.0061358</a>.","chicago":"Widhalm, Alex, Sebastian Krehs, Dustin Siebert, Nand Lal Sharma, Timo Langer, Björn Jonas, Dirk Reuter, Andreas Thiede, Jens Förstner, and Artur Zrenner. “Optoelectronic Sampling of Ultrafast Electric Transients with Single Quantum Dots.” <i>Applied Physics Letters</i> 119 (2021): 181109. <a href=\"https://doi.org/10.1063/5.0061358\">https://doi.org/10.1063/5.0061358</a>.","ama":"Widhalm A, Krehs S, Siebert D, et al. Optoelectronic sampling of ultrafast electric transients with single quantum dots. <i>Applied Physics Letters</i>. 2021;119:181109. doi:<a href=\"https://doi.org/10.1063/5.0061358\">10.1063/5.0061358</a>","bibtex":"@article{Widhalm_Krehs_Siebert_Sharma_Langer_Jonas_Reuter_Thiede_Förstner_Zrenner_2021, title={Optoelectronic sampling of ultrafast electric transients with single quantum dots}, volume={119}, DOI={<a href=\"https://doi.org/10.1063/5.0061358\">10.1063/5.0061358</a>}, journal={Applied Physics Letters}, author={Widhalm, Alex and Krehs, Sebastian and Siebert, Dustin and Sharma, Nand Lal and Langer, Timo and Jonas, Björn and Reuter, Dirk and Thiede, Andreas and Förstner, Jens and Zrenner, Artur}, year={2021}, pages={181109} }","mla":"Widhalm, Alex, et al. “Optoelectronic Sampling of Ultrafast Electric Transients with Single Quantum Dots.” <i>Applied Physics Letters</i>, vol. 119, 2021, p. 181109, doi:<a href=\"https://doi.org/10.1063/5.0061358\">10.1063/5.0061358</a>.","short":"A. Widhalm, S. Krehs, D. Siebert, N.L. Sharma, T. Langer, B. Jonas, D. Reuter, A. Thiede, J. Förstner, A. Zrenner, Applied Physics Letters 119 (2021) 181109.","apa":"Widhalm, A., Krehs, S., Siebert, D., Sharma, N. L., Langer, T., Jonas, B., Reuter, D., Thiede, A., Förstner, J., &#38; Zrenner, A. (2021). Optoelectronic sampling of ultrafast electric transients with single quantum dots. <i>Applied Physics Letters</i>, <i>119</i>, 181109. <a href=\"https://doi.org/10.1063/5.0061358\">https://doi.org/10.1063/5.0061358</a>"},"date_updated":"2023-01-24T11:11:54Z","volume":119,"author":[{"full_name":"Widhalm, Alex","last_name":"Widhalm","first_name":"Alex"},{"first_name":"Sebastian","full_name":"Krehs, Sebastian","last_name":"Krehs"},{"full_name":"Siebert, Dustin","last_name":"Siebert","first_name":"Dustin"},{"full_name":"Sharma, Nand Lal","last_name":"Sharma","first_name":"Nand Lal"},{"first_name":"Timo","last_name":"Langer","full_name":"Langer, Timo"},{"full_name":"Jonas, Björn","last_name":"Jonas","first_name":"Björn"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"last_name":"Thiede","full_name":"Thiede, Andreas","id":"538","first_name":"Andreas"},{"first_name":"Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","full_name":"Förstner, Jens","id":"158"},{"full_name":"Zrenner, Artur","id":"606","last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur"}],"doi":"10.1063/5.0061358"},{"status":"public","type":"journal_article","file_date_updated":"2022-01-06T06:53:07Z","user_id":"158","department":[{"_id":"61"},{"_id":"230"},{"_id":"429"},{"_id":"51"}],"project":[{"_id":"56","name":"TRR 142 - Project Area C"},{"name":"TRR 142 - Subproject C4","_id":"74"},{"_id":"53","name":"TRR 142"},{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"_id":"17322","citation":{"ieee":"A. Mukherjee <i>et al.</i>, “Electrically controlled rapid adiabatic passage in a single quantum dot,” <i>Applied Physics Letters</i>, vol. 116, p. 251103, 2020, doi: <a href=\"https://doi.org/10.1063/5.0012257\">10.1063/5.0012257</a>.","chicago":"Mukherjee, Amlan, Alex Widhalm, Dustin Siebert, Sebastian Krehs, Nandlal Sharma, Andreas Thiede, Dirk Reuter, Jens Förstner, and Artur Zrenner. “Electrically Controlled Rapid Adiabatic Passage in a Single Quantum Dot.” <i>Applied Physics Letters</i> 116 (2020): 251103. <a href=\"https://doi.org/10.1063/5.0012257\">https://doi.org/10.1063/5.0012257</a>.","ama":"Mukherjee A, Widhalm A, Siebert D, et al. Electrically controlled rapid adiabatic passage in a single quantum dot. <i>Applied Physics Letters</i>. 2020;116:251103. doi:<a href=\"https://doi.org/10.1063/5.0012257\">10.1063/5.0012257</a>","mla":"Mukherjee, Amlan, et al. “Electrically Controlled Rapid Adiabatic Passage in a Single Quantum Dot.” <i>Applied Physics Letters</i>, vol. 116, 2020, p. 251103, doi:<a href=\"https://doi.org/10.1063/5.0012257\">10.1063/5.0012257</a>.","short":"A. Mukherjee, A. Widhalm, D. Siebert, S. Krehs, N. Sharma, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 116 (2020) 251103.","bibtex":"@article{Mukherjee_Widhalm_Siebert_Krehs_Sharma_Thiede_Reuter_Förstner_Zrenner_2020, title={Electrically controlled rapid adiabatic passage in a single quantum dot}, volume={116}, DOI={<a href=\"https://doi.org/10.1063/5.0012257\">10.1063/5.0012257</a>}, journal={Applied Physics Letters}, author={Mukherjee, Amlan and Widhalm, Alex and Siebert, Dustin and Krehs, Sebastian and Sharma, Nandlal and Thiede, Andreas and Reuter, Dirk and Förstner, Jens and Zrenner, Artur}, year={2020}, pages={251103} }","apa":"Mukherjee, A., Widhalm, A., Siebert, D., Krehs, S., Sharma, N., Thiede, A., Reuter, D., Förstner, J., &#38; Zrenner, A. (2020). Electrically controlled rapid adiabatic passage in a single quantum dot. <i>Applied Physics Letters</i>, <i>116</i>, 251103. <a href=\"https://doi.org/10.1063/5.0012257\">https://doi.org/10.1063/5.0012257</a>"},"intvolume":"       116","page":"251103","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"has_accepted_license":"1","doi":"10.1063/5.0012257","author":[{"full_name":"Mukherjee, Amlan","last_name":"Mukherjee","first_name":"Amlan"},{"first_name":"Alex","last_name":"Widhalm","full_name":"Widhalm, Alex"},{"first_name":"Dustin","full_name":"Siebert, Dustin","last_name":"Siebert"},{"full_name":"Krehs, Sebastian","last_name":"Krehs","first_name":"Sebastian"},{"full_name":"Sharma, Nandlal","last_name":"Sharma","first_name":"Nandlal"},{"first_name":"Andreas","id":"538","full_name":"Thiede, Andreas","last_name":"Thiede"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"first_name":"Jens","full_name":"Förstner, Jens","id":"158","orcid":"0000-0001-7059-9862","last_name":"Förstner"},{"orcid":"0000-0002-5190-0944","last_name":"Zrenner","id":"606","full_name":"Zrenner, Artur","first_name":"Artur"}],"volume":116,"date_updated":"2023-01-24T11:12:09Z","file":[{"creator":"fossie","embargo":"2021-06-25","file_name":"2020-06 Widhalm - APL - Electrically controlled RAP in single QD (official).pdf","file_size":1359326,"content_type":"application/pdf","date_created":"2020-06-25T12:45:04Z","date_updated":"2022-01-06T06:53:07Z","access_level":"request","file_id":"17325","embargo_to":"open_access","relation":"main_file"}],"publication":"Applied Physics Letters","language":[{"iso":"eng"}],"ddc":["530"],"keyword":["tet_topic_qd"],"year":"2020","title":"Electrically controlled rapid adiabatic passage in a single quantum dot","date_created":"2020-06-25T12:31:42Z"},{"author":[{"id":"158","full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens"},{"first_name":"A.","last_name":"Widhalm","full_name":"Widhalm, A."},{"first_name":"A.","full_name":"Mukherjee, A.","last_name":"Mukherjee"},{"full_name":"Krehs, S.","last_name":"Krehs","first_name":"S."},{"full_name":"Jonas, B.","last_name":"Jonas","first_name":"B."},{"first_name":"K.","last_name":"Spychala","full_name":"Spychala, K."},{"id":"158","full_name":"Förstner, Jens","last_name":"Förstner","orcid":"0000-0001-7059-9862","first_name":"Jens"},{"last_name":"Thiede","id":"538","full_name":"Thiede, Andreas","first_name":"Andreas"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Zrenner","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","id":"606","first_name":"Artur"}],"date_created":"2023-01-25T11:11:42Z","date_updated":"2025-02-12T07:53:06Z","title":"Ultrafast electric control of a single QD exciton","citation":{"ieee":"J. Förstner <i>et al.</i>, “Ultrafast electric control of a single QD exciton,” 2020.","chicago":"Förstner, Jens, A. Widhalm, A. Mukherjee, S. Krehs, B. Jonas, K. Spychala, Jens Förstner, Andreas Thiede, Dirk Reuter, and Artur Zrenner. “Ultrafast Electric Control of a Single QD Exciton.” In <i>11th International Conference on Quantum Dots</i>. Munich/Germany, 2020.","ama":"Förstner J, Widhalm A, Mukherjee A, et al. Ultrafast electric control of a single QD exciton. In: <i>11th International Conference on Quantum Dots</i>. ; 2020.","bibtex":"@inproceedings{Förstner_Widhalm_Mukherjee_Krehs_Jonas_Spychala_Förstner_Thiede_Reuter_Zrenner_2020, place={Munich/Germany}, title={Ultrafast electric control of a single QD exciton}, booktitle={11th International Conference on Quantum Dots}, author={Förstner, Jens and Widhalm, A. and Mukherjee, A. and Krehs, S. and Jonas, B. and Spychala, K. and Förstner, Jens and Thiede, Andreas and Reuter, Dirk and Zrenner, Artur}, year={2020} }","short":"J. Förstner, A. Widhalm, A. Mukherjee, S. Krehs, B. Jonas, K. Spychala, J. Förstner, A. Thiede, D. Reuter, A. Zrenner, in: 11th International Conference on Quantum Dots, Munich/Germany, 2020.","mla":"Förstner, Jens, et al. “Ultrafast Electric Control of a Single QD Exciton.” <i>11th International Conference on Quantum Dots</i>, 2020.","apa":"Förstner, J., Widhalm, A., Mukherjee, A., Krehs, S., Jonas, B., Spychala, K., Förstner, J., Thiede, A., Reuter, D., &#38; Zrenner, A. (2020). Ultrafast electric control of a single QD exciton. <i>11th International Conference on Quantum Dots</i>."},"year":"2020","place":"Munich/Germany","user_id":"42514","department":[{"_id":"61"},{"_id":"230"},{"_id":"429"},{"_id":"51"}],"_id":"39966","language":[{"iso":"eng"}],"type":"conference_abstract","publication":"11th International Conference on Quantum Dots","status":"public"},{"_id":"39649","department":[{"_id":"51"}],"user_id":"158","keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication":"IEEE Transactions on Electron Devices","type":"journal_article","abstract":[{"lang":"eng","text":"Metal-semiconductor and junction n-channel field-effect transistors (MESFETs and JFETs) have been fabricated on glass substrates using room temperature deposited amorphous zinc-tin oxide (ZTO) channel layers. Characteristics of transistors and inverter circuits are compared. Best FET devices exhibit ON-to- OFF current ratios over eight orders of magnitude, subthreshold swings as low as 250 mV/dec and field-effect mobilities of 5 cm 2 /Vs. Furthermore, all devices show long-term stability over a period of more than 200 days. Inverters fabricated using either MESFETs or JFETs exhibit remarkable peak gain magnitude values of 350 and voltage uncertainty levels as low as 260 mV for an operating voltage of 5 V. A Schottky diode FET logic (SDFL) approach is applied to shift the switching voltage which is a requirement for cascading of inverters for realization of ring oscillators."}],"status":"public","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-01-24T17:21:37Z","volume":66,"author":[{"first_name":"Oliver","full_name":"Lahr, Oliver","last_name":"Lahr"},{"full_name":"Zhang, Zhipeng","last_name":"Zhang","first_name":"Zhipeng"},{"last_name":"Grotjahn","full_name":"Grotjahn, Frank","first_name":"Frank"},{"last_name":"Schlupp","full_name":"Schlupp, Peter","first_name":"Peter"},{"first_name":"Sofie","last_name":"Vogt","full_name":"Vogt, Sofie"},{"first_name":"Holger","last_name":"von Wenckstern","full_name":"von Wenckstern, Holger"},{"first_name":"Andreas","full_name":"Thiede, Andreas","id":"538","last_name":"Thiede"},{"first_name":"Marius","full_name":"Grundmann, Marius","last_name":"Grundmann"}],"date_created":"2023-01-24T17:20:18Z","title":"Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs","doi":"10.1109/ted.2019.2922696","publication_identifier":{"issn":["0018-9383","1557-9646"]},"publication_status":"published","issue":"8","year":"2019","page":"3376-3381","intvolume":"        66","citation":{"ama":"Lahr O, Zhang Z, Grotjahn F, et al. Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs. <i>IEEE Transactions on Electron Devices</i>. 2019;66(8):3376-3381. doi:<a href=\"https://doi.org/10.1109/ted.2019.2922696\">10.1109/ted.2019.2922696</a>","ieee":"O. Lahr <i>et al.</i>, “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs,” <i>IEEE Transactions on Electron Devices</i>, vol. 66, no. 8, pp. 3376–3381, 2019, doi: <a href=\"https://doi.org/10.1109/ted.2019.2922696\">10.1109/ted.2019.2922696</a>.","chicago":"Lahr, Oliver, Zhipeng Zhang, Frank Grotjahn, Peter Schlupp, Sofie Vogt, Holger von Wenckstern, Andreas Thiede, and Marius Grundmann. “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs.” <i>IEEE Transactions on Electron Devices</i> 66, no. 8 (2019): 3376–81. <a href=\"https://doi.org/10.1109/ted.2019.2922696\">https://doi.org/10.1109/ted.2019.2922696</a>.","bibtex":"@article{Lahr_Zhang_Grotjahn_Schlupp_Vogt_von Wenckstern_Thiede_Grundmann_2019, title={Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs}, volume={66}, DOI={<a href=\"https://doi.org/10.1109/ted.2019.2922696\">10.1109/ted.2019.2922696</a>}, number={8}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Lahr, Oliver and Zhang, Zhipeng and Grotjahn, Frank and Schlupp, Peter and Vogt, Sofie and von Wenckstern, Holger and Thiede, Andreas and Grundmann, Marius}, year={2019}, pages={3376–3381} }","mla":"Lahr, Oliver, et al. “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs.” <i>IEEE Transactions on Electron Devices</i>, vol. 66, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2019, pp. 3376–81, doi:<a href=\"https://doi.org/10.1109/ted.2019.2922696\">10.1109/ted.2019.2922696</a>.","short":"O. Lahr, Z. Zhang, F. Grotjahn, P. Schlupp, S. Vogt, H. von Wenckstern, A. Thiede, M. Grundmann, IEEE Transactions on Electron Devices 66 (2019) 3376–3381.","apa":"Lahr, O., Zhang, Z., Grotjahn, F., Schlupp, P., Vogt, S., von Wenckstern, H., Thiede, A., &#38; Grundmann, M. (2019). Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs. <i>IEEE Transactions on Electron Devices</i>, <i>66</i>(8), 3376–3381. <a href=\"https://doi.org/10.1109/ted.2019.2922696\">https://doi.org/10.1109/ted.2019.2922696</a>"}},{"abstract":[{"lang":"eng","text":"We report on the coherent phase manipulation of quantum dot excitons by electric means. For our\r\nexperiments, we use a low capacitance single quantum dot photodiode which is electrically\r\ncontrolled by a custom designed SiGe:C BiCMOS chip. The phase manipulation is performed and\r\nquantified in a Ramsey experiment, where ultrafast transient detuning of the exciton energy is\r\nperformed synchronous to double pulse p/2 ps laser excitation. We are able to demonstrate\r\nelectrically controlled phase manipulations with magnitudes up to 3p within 100 ps which is below\r\nthe dephasing time of the quantum dot exciton."}],"file":[{"embargo_to":"open_access","content_type":"application/pdf","relation":"main_file","date_updated":"2022-01-06T06:59:16Z","creator":"fossie","date_created":"2018-08-16T07:42:38Z","file_size":923692,"access_level":"request","embargo":"2019-03-01","file_id":"3914","file_name":"2018-03 Widhalm APL Ultrafast electric phase control of a single exciton qubit.pdf"}],"publication":"Applied Physics Letters","ddc":["530"],"keyword":["tet_topic_qd"],"language":[{"iso":"eng"}],"year":"2018","issue":"11","title":"Ultrafast electric phase control of a single exciton qubit","date_created":"2018-07-05T09:47:26Z","status":"public","type":"journal_article","article_type":"original","file_date_updated":"2022-01-06T06:59:16Z","project":[{"name":"TRR 142","_id":"53"},{"name":"TRR 142 - Project Area C","_id":"56"},{"name":"TRR 142 - Subproject C4","_id":"74"}],"_id":"3427","user_id":"158","department":[{"_id":"15"},{"_id":"230"},{"_id":"61"},{"_id":"51"}],"citation":{"ama":"Widhalm A, Mukherjee A, Krehs S, et al. Ultrafast electric phase control of a single exciton qubit. <i>Applied Physics Letters</i>. 2018;112(11):111105. doi:<a href=\"https://doi.org/10.1063/1.5020364\">10.1063/1.5020364</a>","chicago":"Widhalm, Alex, Amlan Mukherjee, Sebastian Krehs, Nandlal Sharma, Peter Kölling, Andreas Thiede, Dirk Reuter, Jens Förstner, and Artur Zrenner. “Ultrafast Electric Phase Control of a Single Exciton Qubit.” <i>Applied Physics Letters</i> 112, no. 11 (2018): 111105. <a href=\"https://doi.org/10.1063/1.5020364\">https://doi.org/10.1063/1.5020364</a>.","ieee":"A. Widhalm <i>et al.</i>, “Ultrafast electric phase control of a single exciton qubit,” <i>Applied Physics Letters</i>, vol. 112, no. 11, p. 111105, 2018, doi: <a href=\"https://doi.org/10.1063/1.5020364\">10.1063/1.5020364</a>.","apa":"Widhalm, A., Mukherjee, A., Krehs, S., Sharma, N., Kölling, P., Thiede, A., Reuter, D., Förstner, J., &#38; Zrenner, A. (2018). Ultrafast electric phase control of a single exciton qubit. <i>Applied Physics Letters</i>, <i>112</i>(11), 111105. <a href=\"https://doi.org/10.1063/1.5020364\">https://doi.org/10.1063/1.5020364</a>","bibtex":"@article{Widhalm_Mukherjee_Krehs_Sharma_Kölling_Thiede_Reuter_Förstner_Zrenner_2018, title={Ultrafast electric phase control of a single exciton qubit}, volume={112}, DOI={<a href=\"https://doi.org/10.1063/1.5020364\">10.1063/1.5020364</a>}, number={11}, journal={Applied Physics Letters}, author={Widhalm, Alex and Mukherjee, Amlan and Krehs, Sebastian and Sharma, Nandlal and Kölling, Peter and Thiede, Andreas and Reuter, Dirk and Förstner, Jens and Zrenner, Artur}, year={2018}, pages={111105} }","mla":"Widhalm, Alex, et al. “Ultrafast Electric Phase Control of a Single Exciton Qubit.” <i>Applied Physics Letters</i>, vol. 112, no. 11, 2018, p. 111105, doi:<a href=\"https://doi.org/10.1063/1.5020364\">10.1063/1.5020364</a>.","short":"A. Widhalm, A. Mukherjee, S. Krehs, N. Sharma, P. Kölling, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 112 (2018) 111105."},"intvolume":"       112","page":"111105","publication_status":"published","publication_identifier":{"issn":["0003-6951"]},"has_accepted_license":"1","doi":"10.1063/1.5020364","date_updated":"2023-01-24T11:00:08Z","author":[{"first_name":"Alex","last_name":"Widhalm","full_name":"Widhalm, Alex"},{"first_name":"Amlan","last_name":"Mukherjee","full_name":"Mukherjee, Amlan"},{"first_name":"Sebastian","full_name":"Krehs, Sebastian","last_name":"Krehs"},{"first_name":"Nandlal","full_name":"Sharma, Nandlal","last_name":"Sharma"},{"last_name":"Kölling","full_name":"Kölling, Peter","first_name":"Peter"},{"first_name":"Andreas","last_name":"Thiede","full_name":"Thiede, Andreas","id":"538"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"first_name":"Jens","last_name":"Förstner","orcid":"0000-0001-7059-9862","id":"158","full_name":"Förstner, Jens"},{"orcid":"0000-0002-5190-0944","last_name":"Zrenner","full_name":"Zrenner, Artur","id":"606","first_name":"Artur"}],"volume":112},{"language":[{"iso":"eng"}],"_id":"39651","user_id":"158","department":[{"_id":"51"}],"status":"public","type":"conference","publication":"2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)","title":"Program FFlexCom — High frequency flexible bendable electronics for wireless communication systems","doi":"10.1109/comcas.2017.8244733","date_updated":"2023-01-24T17:24:33Z","publisher":"IEEE","author":[{"first_name":"Tilo","last_name":"Meister","full_name":"Meister, Tilo"},{"last_name":"Ellinger","full_name":"Ellinger, Frank","first_name":"Frank"},{"full_name":"Bartha, Johann W.","last_name":"Bartha","first_name":"Johann W."},{"last_name":"Berroth","full_name":"Berroth, Manfred","first_name":"Manfred"},{"last_name":"Burghartz","full_name":"Burghartz, Joachim","first_name":"Joachim"},{"first_name":"Martin","last_name":"Claus","full_name":"Claus, Martin"},{"first_name":"Lothar","last_name":"Frey","full_name":"Frey, Lothar"},{"full_name":"Gagliardi, Alessio","last_name":"Gagliardi","first_name":"Alessio"},{"last_name":"Grundmann","full_name":"Grundmann, Marius","first_name":"Marius"},{"first_name":"Jan","last_name":"Hesselbarth","full_name":"Hesselbarth, Jan"},{"full_name":"Klauk, Hagen","last_name":"Klauk","first_name":"Hagen"},{"first_name":"Karl","full_name":"Leo, Karl","last_name":"Leo"},{"first_name":"Paolo","last_name":"Lugli","full_name":"Lugli, Paolo"},{"last_name":"Mannsfeld","full_name":"Mannsfeld, Stefan","first_name":"Stefan"},{"last_name":"Manoli","full_name":"Manoli, Yiannos","first_name":"Yiannos"},{"full_name":"Negra, Renato","last_name":"Negra","first_name":"Renato"},{"first_name":"Daniel","last_name":"Neumaier","full_name":"Neumaier, Daniel"},{"first_name":"Ullrich","full_name":"Pfeiffer, 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Zhang, in: 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), IEEE, 2018.","mla":"Meister, Tilo, et al. “Program FFlexCom — High Frequency Flexible Bendable Electronics for Wireless Communication Systems.” <i>2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)</i>, IEEE, 2018, doi:<a href=\"https://doi.org/10.1109/comcas.2017.8244733\">10.1109/comcas.2017.8244733</a>.","bibtex":"@inproceedings{Meister_Ellinger_Bartha_Berroth_Burghartz_Claus_Frey_Gagliardi_Grundmann_Hesselbarth_et al._2018, title={Program FFlexCom — High frequency flexible bendable electronics for wireless communication systems}, DOI={<a href=\"https://doi.org/10.1109/comcas.2017.8244733\">10.1109/comcas.2017.8244733</a>}, booktitle={2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)}, publisher={IEEE}, author={Meister, Tilo and Ellinger, Frank and Bartha, Johann W. and Berroth, Manfred and Burghartz, Joachim and Claus, Martin and Frey, Lothar and Gagliardi, Alessio and Grundmann, Marius and Hesselbarth, Jan and et al.}, year={2018} }","apa":"Meister, T., Ellinger, F., Bartha, J. 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Thiede, in: 2015 German Microwave Conference, IEEE, 2015.","bibtex":"@inproceedings{Ali_Fischer_Thiede_2015, title={Low power fundamental VCO design in D-band using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS technology}, DOI={<a href=\"https://doi.org/10.1109/gemic.2015.7107827\">10.1109/gemic.2015.7107827</a>}, booktitle={2015 German Microwave Conference}, publisher={IEEE}, author={Ali, U. and Fischer, G. and Thiede, Andreas}, year={2015} }","mla":"Ali, U., et al. “Low Power Fundamental VCO Design in D-Band Using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS Technology.” <i>2015 German Microwave Conference</i>, IEEE, 2015, doi:<a href=\"https://doi.org/10.1109/gemic.2015.7107827\">10.1109/gemic.2015.7107827</a>.","ama":"Ali U, Fischer G, Thiede A. Low power fundamental VCO design in D-band using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS technology. In: <i>2015 German Microwave Conference</i>. IEEE; 2015. doi:<a href=\"https://doi.org/10.1109/gemic.2015.7107827\">10.1109/gemic.2015.7107827</a>","ieee":"U. Ali, G. Fischer, and A. Thiede, “Low power fundamental VCO design in D-band using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS technology,” 2015, doi: <a href=\"https://doi.org/10.1109/gemic.2015.7107827\">10.1109/gemic.2015.7107827</a>.","chicago":"Ali, U., G. Fischer, and Andreas Thiede. “Low Power Fundamental VCO Design in D-Band Using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS Technology.” In <i>2015 German Microwave Conference</i>. IEEE, 2015. <a href=\"https://doi.org/10.1109/gemic.2015.7107827\">https://doi.org/10.1109/gemic.2015.7107827</a>."},"_id":"41917","department":[{"_id":"51"}],"user_id":"77496","language":[{"iso":"eng"}],"publication":"2015 German Microwave Conference","type":"conference","status":"public"},{"_id":"24310","department":[{"_id":"58"},{"_id":"51"}],"user_id":"158","language":[{"iso":"eng"}],"publication":"IEEE JOURNAL OF SOLID-STATE CIRCUITS","type":"journal_article","abstract":[{"text":"A millimeter wave frequency mixed-signal design of a 1-tap half-rate look-ahead decision feedback equalizer for 80 Gb/s short-reach optical communication systems is presented. On-wafer tests are developed to determine the maximum operating bit rate of the equalizer. Results are also presented for intersymbol interference mitigation at 80 Gb/s for a 20 GHz bandwidth-limited channel. Further improvements on the architecture of the 80 Gb/s equalizer are discussed and used in the design and on-wafer measurement of a 110 Gb/s equalizer. The equalizers are designed in a 0.13 μm SiGe:C BiCMOS technology. The 80 and 110 Gb/s versions dissipate 4 and 5.75 W, respectively and occupy 2 and 2.56 mm 2 , respectively.","lang":"eng"}],"status":"public","date_updated":"2023-01-25T11:03:36Z","volume":"Vol.49","date_created":"2021-09-14T07:06:58Z","author":[{"full_name":"Awny, Ahmed","last_name":"Awny","first_name":"Ahmed"},{"last_name":"Möller","full_name":"Möller, Lothar","first_name":"Lothar"},{"first_name":"Josef","last_name":"Junio","full_name":"Junio, Josef"},{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","orcid":"https://orcid.org/0000-0002-5950-6618","last_name":"Scheytt"},{"first_name":"Andreas","last_name":"Thiede","full_name":"Thiede, Andreas","id":"538"}],"title":"Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer","doi":"10.1109/JSSC.2013.2285385","publication_identifier":{"eissn":["1558-173X"]},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6648461"}]},"issue":"No.2","year":"2014","page":"452-470","citation":{"mla":"Awny, Ahmed, et al. “Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer.” <i>IEEE JOURNAL OF SOLID-STATE CIRCUITS</i>, vol. Vol.49, no. No.2, 2014, pp. 452–70, doi:<a href=\"https://doi.org/10.1109/JSSC.2013.2285385\">10.1109/JSSC.2013.2285385</a>.","bibtex":"@article{Awny_Möller_Junio_Scheytt_Thiede_2014, title={Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer}, volume={Vol.49}, DOI={<a href=\"https://doi.org/10.1109/JSSC.2013.2285385\">10.1109/JSSC.2013.2285385</a>}, number={No.2}, journal={IEEE JOURNAL OF SOLID-STATE CIRCUITS}, author={Awny, Ahmed and Möller, Lothar and Junio, Josef and Scheytt, Christoph and Thiede, Andreas}, year={2014}, pages={452–470} }","short":"A. Awny, L. Möller, J. Junio, C. Scheytt, A. Thiede, IEEE JOURNAL OF SOLID-STATE CIRCUITS Vol.49 (2014) 452–470.","apa":"Awny, A., Möller, L., Junio, J., Scheytt, C., &#38; Thiede, A. (2014). Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer. <i>IEEE JOURNAL OF SOLID-STATE CIRCUITS</i>, <i>Vol.49</i>(No.2), 452–470. <a href=\"https://doi.org/10.1109/JSSC.2013.2285385\">https://doi.org/10.1109/JSSC.2013.2285385</a>","ieee":"A. Awny, L. Möller, J. Junio, C. Scheytt, and A. Thiede, “Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer,” <i>IEEE JOURNAL OF SOLID-STATE CIRCUITS</i>, vol. Vol.49, no. No.2, pp. 452–470, 2014, doi: <a href=\"https://doi.org/10.1109/JSSC.2013.2285385\">10.1109/JSSC.2013.2285385</a>.","chicago":"Awny, Ahmed, Lothar Möller, Josef Junio, Christoph Scheytt, and Andreas Thiede. “Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer.” <i>IEEE JOURNAL OF SOLID-STATE CIRCUITS</i> Vol.49, no. No.2 (2014): 452–70. <a href=\"https://doi.org/10.1109/JSSC.2013.2285385\">https://doi.org/10.1109/JSSC.2013.2285385</a>.","ama":"Awny A, Möller L, Junio J, Scheytt C, Thiede A. Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer. <i>IEEE JOURNAL OF SOLID-STATE CIRCUITS</i>. 2014;Vol.49(No.2):452-470. doi:<a href=\"https://doi.org/10.1109/JSSC.2013.2285385\">10.1109/JSSC.2013.2285385</a>"}},{"title":"80 Gb/s Decision Feedback Equalizer for Intersymbol Interference","doi":"10.1364/OFC.2013.OW4B.2 ","date_updated":"2023-01-25T11:03:26Z","date_created":"2021-09-14T09:22:28Z","author":[{"first_name":"Lothar","last_name":"Möller","full_name":"Möller, Lothar"},{"first_name":"Ahmed","last_name":"Awny","full_name":"Awny, Ahmed"},{"last_name":"Junio","full_name":"Junio, Josef","first_name":"Josef"},{"first_name":"Christoph","id":"37144","full_name":"Scheytt, Christoph","orcid":"https://orcid.org/0000-0002-5950-6618","last_name":"Scheytt"},{"first_name":"Andreas","last_name":"Thiede","id":"538","full_name":"Thiede, Andreas"}],"year":"2013","place":"Anaheim, California United States","citation":{"ama":"Möller L, Awny A, Junio J, Scheytt C, Thiede A. 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference. In: <i>Optical Fiber Communication Conference</i>. ; 2013. doi:<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>","ieee":"L. Möller, A. Awny, J. Junio, C. Scheytt, and A. Thiede, “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference,” 2013, doi: <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>.","chicago":"Möller, Lothar, Ahmed Awny, Josef Junio, Christoph Scheytt, and Andreas Thiede. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” In <i>Optical Fiber Communication Conference</i>. Anaheim, California United States, 2013. <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">https://doi.org/10.1364/OFC.2013.OW4B.2 </a>.","apa":"Möller, L., Awny, A., Junio, J., Scheytt, C., &#38; Thiede, A. (2013). 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference. <i>Optical Fiber Communication Conference</i>. <a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">https://doi.org/10.1364/OFC.2013.OW4B.2 </a>","mla":"Möller, Lothar, et al. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” <i>Optical Fiber Communication Conference</i>, 2013, doi:<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>.","short":"L. Möller, A. Awny, J. Junio, C. Scheytt, A. Thiede, in: Optical Fiber Communication Conference, Anaheim, California United States, 2013.","bibtex":"@inproceedings{Möller_Awny_Junio_Scheytt_Thiede_2013, place={Anaheim, California United States}, title={80 Gb/s Decision Feedback Equalizer for Intersymbol Interference}, DOI={<a href=\"https://doi.org/10.1364/OFC.2013.OW4B.2 \">10.1364/OFC.2013.OW4B.2 </a>}, booktitle={Optical Fiber Communication Conference}, author={Möller, Lothar and Awny, Ahmed and Junio, Josef and Scheytt, Christoph and Thiede, Andreas}, year={2013} }"},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6533180"}]},"language":[{"iso":"eng"}],"_id":"24351","department":[{"_id":"58"},{"_id":"51"}],"user_id":"158","abstract":[{"lang":"eng","text":"We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology, enables error-free data recovery of heavily distorted signals transmitted at a bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer reported yet utilizes a novel 1-tap look-ahead architecture."}],"status":"public","publication":"Optical Fiber Communication Conference","type":"conference"},{"publisher":"IEEE","date_updated":"2023-02-08T13:24:57Z","author":[{"first_name":"U.","last_name":"Ali","full_name":"Ali, U."},{"full_name":"Thiede, Andreas","id":"538","last_name":"Thiede","first_name":"Andreas"}],"date_created":"2023-02-08T13:24:46Z","title":"A millimeter wave quad-phase ring oscillator using 0.13 &amp;#x00B5;m SiGe BiCMOS HBT technology","doi":"10.1109/iscdg.2013.6656297","publication_status":"published","year":"2013","citation":{"apa":"Ali, U., &#38; Thiede, A. (2013). A millimeter wave quad-phase ring oscillator using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS HBT technology. <i>2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)</i>. <a href=\"https://doi.org/10.1109/iscdg.2013.6656297\">https://doi.org/10.1109/iscdg.2013.6656297</a>","mla":"Ali, U., and Andreas Thiede. “A Millimeter Wave Quad-Phase Ring Oscillator Using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS HBT Technology.” <i>2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)</i>, IEEE, 2013, doi:<a href=\"https://doi.org/10.1109/iscdg.2013.6656297\">10.1109/iscdg.2013.6656297</a>.","short":"U. Ali, A. Thiede, in: 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG), IEEE, 2013.","bibtex":"@inproceedings{Ali_Thiede_2013, title={A millimeter wave quad-phase ring oscillator using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS HBT technology}, DOI={<a href=\"https://doi.org/10.1109/iscdg.2013.6656297\">10.1109/iscdg.2013.6656297</a>}, booktitle={2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)}, publisher={IEEE}, author={Ali, U. and Thiede, Andreas}, year={2013} }","ama":"Ali U, Thiede A. A millimeter wave quad-phase ring oscillator using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS HBT technology. In: <i>2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)</i>. IEEE; 2013. doi:<a href=\"https://doi.org/10.1109/iscdg.2013.6656297\">10.1109/iscdg.2013.6656297</a>","ieee":"U. Ali and A. Thiede, “A millimeter wave quad-phase ring oscillator using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS HBT technology,” 2013, doi: <a href=\"https://doi.org/10.1109/iscdg.2013.6656297\">10.1109/iscdg.2013.6656297</a>.","chicago":"Ali, U., and Andreas Thiede. “A Millimeter Wave Quad-Phase Ring Oscillator Using 0.13 &#38;amp;#x00B5;m SiGe BiCMOS HBT Technology.” In <i>2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)</i>. IEEE, 2013. <a href=\"https://doi.org/10.1109/iscdg.2013.6656297\">https://doi.org/10.1109/iscdg.2013.6656297</a>."},"_id":"41919","user_id":"77496","department":[{"_id":"51"}],"language":[{"iso":"eng"}],"type":"conference","publication":"2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)","status":"public"}]