---
_id: '27099'
abstract:
- lang: eng
text: In our work, we have engineered low capacitance single quantum dot photodiodes
as sensor devices for the optoelectronic sampling of ultrafast electric signals.
By the Stark effect, a time-dependent electric signal is converted into a time-dependent
shift of the transition energy. This shift is measured accurately by resonant
ps laser spectroscopy with photocurrent detection. In our experiments, we sample
the laser synchronous output pulse of an ultrafast CMOS circuit with high resolution.
With our quantum dot sensor device, we were able to sample transients below 20
ps with a voltage resolution in the mV-range.
author:
- first_name: Alex
full_name: Widhalm, Alex
last_name: Widhalm
- first_name: Sebastian
full_name: Krehs, Sebastian
last_name: Krehs
- first_name: Dustin
full_name: Siebert, Dustin
last_name: Siebert
- first_name: Nand Lal
full_name: Sharma, Nand Lal
last_name: Sharma
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Björn
full_name: Jonas, Björn
last_name: Jonas
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Widhalm A, Krehs S, Siebert D, et al. Optoelectronic sampling of ultrafast
electric transients with single quantum dots. Applied Physics Letters.
2021;119:181109. doi:10.1063/5.0061358
apa: Widhalm, A., Krehs, S., Siebert, D., Sharma, N. L., Langer, T., Jonas, B.,
Reuter, D., Thiede, A., Förstner, J., & Zrenner, A. (2021). Optoelectronic
sampling of ultrafast electric transients with single quantum dots. Applied
Physics Letters, 119, 181109. https://doi.org/10.1063/5.0061358
bibtex: '@article{Widhalm_Krehs_Siebert_Sharma_Langer_Jonas_Reuter_Thiede_Förstner_Zrenner_2021,
title={Optoelectronic sampling of ultrafast electric transients with single quantum
dots}, volume={119}, DOI={10.1063/5.0061358},
journal={Applied Physics Letters}, author={Widhalm, Alex and Krehs, Sebastian
and Siebert, Dustin and Sharma, Nand Lal and Langer, Timo and Jonas, Björn and
Reuter, Dirk and Thiede, Andreas and Förstner, Jens and Zrenner, Artur}, year={2021},
pages={181109} }'
chicago: 'Widhalm, Alex, Sebastian Krehs, Dustin Siebert, Nand Lal Sharma, Timo
Langer, Björn Jonas, Dirk Reuter, Andreas Thiede, Jens Förstner, and Artur Zrenner.
“Optoelectronic Sampling of Ultrafast Electric Transients with Single Quantum
Dots.” Applied Physics Letters 119 (2021): 181109. https://doi.org/10.1063/5.0061358.'
ieee: 'A. Widhalm et al., “Optoelectronic sampling of ultrafast electric
transients with single quantum dots,” Applied Physics Letters, vol. 119,
p. 181109, 2021, doi: 10.1063/5.0061358.'
mla: Widhalm, Alex, et al. “Optoelectronic Sampling of Ultrafast Electric Transients
with Single Quantum Dots.” Applied Physics Letters, vol. 119, 2021, p.
181109, doi:10.1063/5.0061358.
short: A. Widhalm, S. Krehs, D. Siebert, N.L. Sharma, T. Langer, B. Jonas, D. Reuter,
A. Thiede, J. Förstner, A. Zrenner, Applied Physics Letters 119 (2021) 181109.
date_created: 2021-11-03T10:32:03Z
date_updated: 2023-01-24T11:11:54Z
ddc:
- '530'
department:
- _id: '15'
- _id: '230'
- _id: '61'
- _id: '51'
doi: 10.1063/5.0061358
file:
- access_level: local
content_type: application/pdf
creator: fossie
date_created: 2021-11-04T13:46:27Z
date_updated: 2021-11-04T13:46:27Z
embargo: 2022-11-04
embargo_to: open_access
file_id: '27157'
file_name: 2021-11 Widhalm - APL - Optoelectronic sampling of ultrafast electric
transients with single quantum dots (published version).pdf
file_size: 1999652
relation: main_file
file_date_updated: 2021-11-04T13:46:27Z
has_accepted_license: '1'
intvolume: ' 119'
keyword:
- tet_topic_qd
language:
- iso: eng
page: '181109'
project:
- _id: '74'
name: TRR 142 - Subproject C4
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
- _id: '60'
name: TRR 142 - Subproject A3
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Optoelectronic sampling of ultrafast electric transients with single quantum
dots
type: journal_article
user_id: '158'
volume: 119
year: '2021'
...
---
_id: '17322'
author:
- first_name: Amlan
full_name: Mukherjee, Amlan
last_name: Mukherjee
- first_name: Alex
full_name: Widhalm, Alex
last_name: Widhalm
- first_name: Dustin
full_name: Siebert, Dustin
last_name: Siebert
- first_name: Sebastian
full_name: Krehs, Sebastian
last_name: Krehs
- first_name: Nandlal
full_name: Sharma, Nandlal
last_name: Sharma
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Mukherjee A, Widhalm A, Siebert D, et al. Electrically controlled rapid adiabatic
passage in a single quantum dot. Applied Physics Letters. 2020;116:251103.
doi:10.1063/5.0012257
apa: Mukherjee, A., Widhalm, A., Siebert, D., Krehs, S., Sharma, N., Thiede, A.,
Reuter, D., Förstner, J., & Zrenner, A. (2020). Electrically controlled rapid
adiabatic passage in a single quantum dot. Applied Physics Letters, 116,
251103. https://doi.org/10.1063/5.0012257
bibtex: '@article{Mukherjee_Widhalm_Siebert_Krehs_Sharma_Thiede_Reuter_Förstner_Zrenner_2020,
title={Electrically controlled rapid adiabatic passage in a single quantum dot},
volume={116}, DOI={10.1063/5.0012257},
journal={Applied Physics Letters}, author={Mukherjee, Amlan and Widhalm, Alex
and Siebert, Dustin and Krehs, Sebastian and Sharma, Nandlal and Thiede, Andreas
and Reuter, Dirk and Förstner, Jens and Zrenner, Artur}, year={2020}, pages={251103}
}'
chicago: 'Mukherjee, Amlan, Alex Widhalm, Dustin Siebert, Sebastian Krehs, Nandlal
Sharma, Andreas Thiede, Dirk Reuter, Jens Förstner, and Artur Zrenner. “Electrically
Controlled Rapid Adiabatic Passage in a Single Quantum Dot.” Applied Physics
Letters 116 (2020): 251103. https://doi.org/10.1063/5.0012257.'
ieee: 'A. Mukherjee et al., “Electrically controlled rapid adiabatic passage
in a single quantum dot,” Applied Physics Letters, vol. 116, p. 251103,
2020, doi: 10.1063/5.0012257.'
mla: Mukherjee, Amlan, et al. “Electrically Controlled Rapid Adiabatic Passage in
a Single Quantum Dot.” Applied Physics Letters, vol. 116, 2020, p. 251103,
doi:10.1063/5.0012257.
short: A. Mukherjee, A. Widhalm, D. Siebert, S. Krehs, N. Sharma, A. Thiede, D.
Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 116 (2020) 251103.
date_created: 2020-06-25T12:31:42Z
date_updated: 2023-01-24T11:12:09Z
ddc:
- '530'
department:
- _id: '61'
- _id: '230'
- _id: '429'
- _id: '51'
doi: 10.1063/5.0012257
file:
- access_level: request
content_type: application/pdf
creator: fossie
date_created: 2020-06-25T12:45:04Z
date_updated: 2022-01-06T06:53:07Z
embargo: 2021-06-25
embargo_to: open_access
file_id: '17325'
file_name: 2020-06 Widhalm - APL - Electrically controlled RAP in single QD (official).pdf
file_size: 1359326
relation: main_file
file_date_updated: 2022-01-06T06:53:07Z
has_accepted_license: '1'
intvolume: ' 116'
keyword:
- tet_topic_qd
language:
- iso: eng
page: '251103'
project:
- _id: '56'
name: TRR 142 - Project Area C
- _id: '74'
name: TRR 142 - Subproject C4
- _id: '53'
name: TRR 142
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Electrically controlled rapid adiabatic passage in a single quantum dot
type: journal_article
user_id: '158'
volume: 116
year: '2020'
...
---
_id: '39966'
author:
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: A.
full_name: Widhalm, A.
last_name: Widhalm
- first_name: A.
full_name: Mukherjee, A.
last_name: Mukherjee
- first_name: S.
full_name: Krehs, S.
last_name: Krehs
- first_name: B.
full_name: Jonas, B.
last_name: Jonas
- first_name: K.
full_name: Spychala, K.
last_name: Spychala
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: 'Förstner J, Widhalm A, Mukherjee A, et al. Ultrafast electric control of a
single QD exciton. In: 11th International Conference on Quantum Dots. ;
2020.'
apa: Förstner, J., Widhalm, A., Mukherjee, A., Krehs, S., Jonas, B., Spychala, K.,
Förstner, J., Thiede, A., Reuter, D., & Zrenner, A. (2020). Ultrafast electric
control of a single QD exciton. 11th International Conference on Quantum Dots.
bibtex: '@inproceedings{Förstner_Widhalm_Mukherjee_Krehs_Jonas_Spychala_Förstner_Thiede_Reuter_Zrenner_2020,
place={Munich/Germany}, title={Ultrafast electric control of a single QD exciton},
booktitle={11th International Conference on Quantum Dots}, author={Förstner, Jens
and Widhalm, A. and Mukherjee, A. and Krehs, S. and Jonas, B. and Spychala, K.
and Förstner, Jens and Thiede, Andreas and Reuter, Dirk and Zrenner, Artur}, year={2020}
}'
chicago: Förstner, Jens, A. Widhalm, A. Mukherjee, S. Krehs, B. Jonas, K. Spychala,
Jens Förstner, Andreas Thiede, Dirk Reuter, and Artur Zrenner. “Ultrafast Electric
Control of a Single QD Exciton.” In 11th International Conference on Quantum
Dots. Munich/Germany, 2020.
ieee: J. Förstner et al., “Ultrafast electric control of a single QD exciton,”
2020.
mla: Förstner, Jens, et al. “Ultrafast Electric Control of a Single QD Exciton.”
11th International Conference on Quantum Dots, 2020.
short: 'J. Förstner, A. Widhalm, A. Mukherjee, S. Krehs, B. Jonas, K. Spychala,
J. Förstner, A. Thiede, D. Reuter, A. Zrenner, in: 11th International Conference
on Quantum Dots, Munich/Germany, 2020.'
date_created: 2023-01-25T11:11:42Z
date_updated: 2025-02-12T07:53:06Z
department:
- _id: '61'
- _id: '230'
- _id: '429'
- _id: '51'
language:
- iso: eng
place: Munich/Germany
publication: 11th International Conference on Quantum Dots
status: public
title: Ultrafast electric control of a single QD exciton
type: conference_abstract
user_id: '42514'
year: '2020'
...
---
_id: '39649'
abstract:
- lang: eng
text: Metal-semiconductor and junction n-channel field-effect transistors (MESFETs
and JFETs) have been fabricated on glass substrates using room temperature deposited
amorphous zinc-tin oxide (ZTO) channel layers. Characteristics of transistors
and inverter circuits are compared. Best FET devices exhibit ON-to- OFF current
ratios over eight orders of magnitude, subthreshold swings as low as 250 mV/dec
and field-effect mobilities of 5 cm 2 /Vs. Furthermore, all devices show long-term
stability over a period of more than 200 days. Inverters fabricated using either
MESFETs or JFETs exhibit remarkable peak gain magnitude values of 350 and voltage
uncertainty levels as low as 260 mV for an operating voltage of 5 V. A Schottky
diode FET logic (SDFL) approach is applied to shift the switching voltage which
is a requirement for cascading of inverters for realization of ring oscillators.
author:
- first_name: Oliver
full_name: Lahr, Oliver
last_name: Lahr
- first_name: Zhipeng
full_name: Zhang, Zhipeng
last_name: Zhang
- first_name: Frank
full_name: Grotjahn, Frank
last_name: Grotjahn
- first_name: Peter
full_name: Schlupp, Peter
last_name: Schlupp
- first_name: Sofie
full_name: Vogt, Sofie
last_name: Vogt
- first_name: Holger
full_name: von Wenckstern, Holger
last_name: von Wenckstern
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
- first_name: Marius
full_name: Grundmann, Marius
last_name: Grundmann
citation:
ama: Lahr O, Zhang Z, Grotjahn F, et al. Full-Swing, High-Gain Inverters Based on
ZnSnO JFETs and MESFETs. IEEE Transactions on Electron Devices. 2019;66(8):3376-3381.
doi:10.1109/ted.2019.2922696
apa: Lahr, O., Zhang, Z., Grotjahn, F., Schlupp, P., Vogt, S., von Wenckstern, H.,
Thiede, A., & Grundmann, M. (2019). Full-Swing, High-Gain Inverters Based
on ZnSnO JFETs and MESFETs. IEEE Transactions on Electron Devices, 66(8),
3376–3381. https://doi.org/10.1109/ted.2019.2922696
bibtex: '@article{Lahr_Zhang_Grotjahn_Schlupp_Vogt_von Wenckstern_Thiede_Grundmann_2019,
title={Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs}, volume={66},
DOI={10.1109/ted.2019.2922696},
number={8}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
of Electrical and Electronics Engineers (IEEE)}, author={Lahr, Oliver and Zhang,
Zhipeng and Grotjahn, Frank and Schlupp, Peter and Vogt, Sofie and von Wenckstern,
Holger and Thiede, Andreas and Grundmann, Marius}, year={2019}, pages={3376–3381}
}'
chicago: 'Lahr, Oliver, Zhipeng Zhang, Frank Grotjahn, Peter Schlupp, Sofie Vogt,
Holger von Wenckstern, Andreas Thiede, and Marius Grundmann. “Full-Swing, High-Gain
Inverters Based on ZnSnO JFETs and MESFETs.” IEEE Transactions on Electron
Devices 66, no. 8 (2019): 3376–81. https://doi.org/10.1109/ted.2019.2922696.'
ieee: 'O. Lahr et al., “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs
and MESFETs,” IEEE Transactions on Electron Devices, vol. 66, no. 8, pp.
3376–3381, 2019, doi: 10.1109/ted.2019.2922696.'
mla: Lahr, Oliver, et al. “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs
and MESFETs.” IEEE Transactions on Electron Devices, vol. 66, no. 8, Institute
of Electrical and Electronics Engineers (IEEE), 2019, pp. 3376–81, doi:10.1109/ted.2019.2922696.
short: O. Lahr, Z. Zhang, F. Grotjahn, P. Schlupp, S. Vogt, H. von Wenckstern, A.
Thiede, M. Grundmann, IEEE Transactions on Electron Devices 66 (2019) 3376–3381.
date_created: 2023-01-24T17:20:18Z
date_updated: 2023-01-24T17:21:37Z
department:
- _id: '51'
doi: 10.1109/ted.2019.2922696
intvolume: ' 66'
issue: '8'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 3376-3381
publication: IEEE Transactions on Electron Devices
publication_identifier:
issn:
- 0018-9383
- 1557-9646
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs
type: journal_article
user_id: '158'
volume: 66
year: '2019'
...
---
_id: '3427'
abstract:
- lang: eng
text: "We report on the coherent phase manipulation of quantum dot excitons by electric
means. For our\r\nexperiments, we use a low capacitance single quantum dot photodiode
which is electrically\r\ncontrolled by a custom designed SiGe:C BiCMOS chip. The
phase manipulation is performed and\r\nquantified in a Ramsey experiment, where
ultrafast transient detuning of the exciton energy is\r\nperformed synchronous
to double pulse p/2 ps laser excitation. We are able to demonstrate\r\nelectrically
controlled phase manipulations with magnitudes up to 3p within 100 ps which is
below\r\nthe dephasing time of the quantum dot exciton."
article_type: original
author:
- first_name: Alex
full_name: Widhalm, Alex
last_name: Widhalm
- first_name: Amlan
full_name: Mukherjee, Amlan
last_name: Mukherjee
- first_name: Sebastian
full_name: Krehs, Sebastian
last_name: Krehs
- first_name: Nandlal
full_name: Sharma, Nandlal
last_name: Sharma
- first_name: Peter
full_name: Kölling, Peter
last_name: Kölling
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Widhalm A, Mukherjee A, Krehs S, et al. Ultrafast electric phase control of
a single exciton qubit. Applied Physics Letters. 2018;112(11):111105. doi:10.1063/1.5020364
apa: Widhalm, A., Mukherjee, A., Krehs, S., Sharma, N., Kölling, P., Thiede, A.,
Reuter, D., Förstner, J., & Zrenner, A. (2018). Ultrafast electric phase control
of a single exciton qubit. Applied Physics Letters, 112(11), 111105.
https://doi.org/10.1063/1.5020364
bibtex: '@article{Widhalm_Mukherjee_Krehs_Sharma_Kölling_Thiede_Reuter_Förstner_Zrenner_2018,
title={Ultrafast electric phase control of a single exciton qubit}, volume={112},
DOI={10.1063/1.5020364}, number={11},
journal={Applied Physics Letters}, author={Widhalm, Alex and Mukherjee, Amlan
and Krehs, Sebastian and Sharma, Nandlal and Kölling, Peter and Thiede, Andreas
and Reuter, Dirk and Förstner, Jens and Zrenner, Artur}, year={2018}, pages={111105}
}'
chicago: 'Widhalm, Alex, Amlan Mukherjee, Sebastian Krehs, Nandlal Sharma, Peter
Kölling, Andreas Thiede, Dirk Reuter, Jens Förstner, and Artur Zrenner. “Ultrafast
Electric Phase Control of a Single Exciton Qubit.” Applied Physics Letters
112, no. 11 (2018): 111105. https://doi.org/10.1063/1.5020364.'
ieee: 'A. Widhalm et al., “Ultrafast electric phase control of a single exciton
qubit,” Applied Physics Letters, vol. 112, no. 11, p. 111105, 2018, doi:
10.1063/1.5020364.'
mla: Widhalm, Alex, et al. “Ultrafast Electric Phase Control of a Single Exciton
Qubit.” Applied Physics Letters, vol. 112, no. 11, 2018, p. 111105, doi:10.1063/1.5020364.
short: A. Widhalm, A. Mukherjee, S. Krehs, N. Sharma, P. Kölling, A. Thiede, D.
Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 112 (2018) 111105.
date_created: 2018-07-05T09:47:26Z
date_updated: 2023-01-24T11:00:08Z
ddc:
- '530'
department:
- _id: '15'
- _id: '230'
- _id: '61'
- _id: '51'
doi: 10.1063/1.5020364
file:
- access_level: request
content_type: application/pdf
creator: fossie
date_created: 2018-08-16T07:42:38Z
date_updated: 2022-01-06T06:59:16Z
embargo: 2019-03-01
embargo_to: open_access
file_id: '3914'
file_name: 2018-03 Widhalm APL Ultrafast electric phase control of a single exciton
qubit.pdf
file_size: 923692
relation: main_file
file_date_updated: 2022-01-06T06:59:16Z
has_accepted_license: '1'
intvolume: ' 112'
issue: '11'
keyword:
- tet_topic_qd
language:
- iso: eng
page: '111105'
project:
- _id: '53'
name: TRR 142
- _id: '56'
name: TRR 142 - Project Area C
- _id: '74'
name: TRR 142 - Subproject C4
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
publication_status: published
status: public
title: Ultrafast electric phase control of a single exciton qubit
type: journal_article
user_id: '158'
volume: 112
year: '2018'
...
---
_id: '39651'
author:
- first_name: Tilo
full_name: Meister, Tilo
last_name: Meister
- first_name: Frank
full_name: Ellinger, Frank
last_name: Ellinger
- first_name: Johann W.
full_name: Bartha, Johann W.
last_name: Bartha
- first_name: Manfred
full_name: Berroth, Manfred
last_name: Berroth
- first_name: Joachim
full_name: Burghartz, Joachim
last_name: Burghartz
- first_name: Martin
full_name: Claus, Martin
last_name: Claus
- first_name: Lothar
full_name: Frey, Lothar
last_name: Frey
- first_name: Alessio
full_name: Gagliardi, Alessio
last_name: Gagliardi
- first_name: Marius
full_name: Grundmann, Marius
last_name: Grundmann
- first_name: Jan
full_name: Hesselbarth, Jan
last_name: Hesselbarth
- first_name: Hagen
full_name: Klauk, Hagen
last_name: Klauk
- first_name: Karl
full_name: Leo, Karl
last_name: Leo
- first_name: Paolo
full_name: Lugli, Paolo
last_name: Lugli
- first_name: Stefan
full_name: Mannsfeld, Stefan
last_name: Mannsfeld
- first_name: Yiannos
full_name: Manoli, Yiannos
last_name: Manoli
- first_name: Renato
full_name: Negra, Renato
last_name: Negra
- first_name: Daniel
full_name: Neumaier, Daniel
last_name: Neumaier
- first_name: Ullrich
full_name: Pfeiffer, Ullrich
last_name: Pfeiffer
- first_name: Thomas
full_name: Riedl, Thomas
last_name: Riedl
- first_name: Susanne
full_name: Scheinert, Susanne
last_name: Scheinert
- first_name: Ullrich
full_name: Scherf, Ullrich
last_name: Scherf
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
- first_name: Gerhard
full_name: Troster, Gerhard
last_name: Troster
- first_name: Martin
full_name: Vossiek, Martin
last_name: Vossiek
- first_name: Robert
full_name: Weigel, Robert
last_name: Weigel
- first_name: Christian
full_name: Wenger, Christian
last_name: Wenger
- first_name: Golzar
full_name: Alavi, Golzar
last_name: Alavi
- first_name: Markus
full_name: Becherer, Markus
last_name: Becherer
- first_name: Carlos Alvarado
full_name: Chavarin, Carlos Alvarado
last_name: Chavarin
- first_name: Mohammed
full_name: Darwish, Mohammed
last_name: Darwish
- first_name: Martin
full_name: Ellinger, Martin
last_name: Ellinger
- first_name: Chun-Yu
full_name: Fan, Chun-Yu
last_name: Fan
- first_name: Martin
full_name: Fritsch, Martin
last_name: Fritsch
- first_name: Frank
full_name: Grotjahn, Frank
last_name: Grotjahn
- first_name: Marco
full_name: Gunia, Marco
last_name: Gunia
- first_name: Katherina
full_name: Haase, Katherina
last_name: Haase
- first_name: Philipp
full_name: Hillger, Philipp
last_name: Hillger
- first_name: Koichi
full_name: Ishida, Koichi
last_name: Ishida
- first_name: Michael
full_name: Jank, Michael
last_name: Jank
- first_name: Stefan
full_name: Knobelspies, Stefan
last_name: Knobelspies
- first_name: Matthias
full_name: Kuhl, Matthias
last_name: Kuhl
- first_name: Grzegorz
full_name: Lupina, Grzegorz
last_name: Lupina
- first_name: Shabnam Mohammadi
full_name: Naghadeh, Shabnam Mohammadi
last_name: Naghadeh
- first_name: Niko
full_name: Munzenrieder, Niko
last_name: Munzenrieder
- first_name: Sefa
full_name: Ozbek, Sefa
last_name: Ozbek
- first_name: Mahsa
full_name: Rasteh, Mahsa
last_name: Rasteh
- first_name: Giovanni A.
full_name: Salvatore, Giovanni A.
last_name: Salvatore
- first_name: Daniel
full_name: Schrufer, Daniel
last_name: Schrufer
- first_name: Carsten
full_name: Strobel, Carsten
last_name: Strobel
- first_name: Manuel
full_name: Theisen, Manuel
last_name: Theisen
- first_name: Christian
full_name: Tuckmantel, Christian
last_name: Tuckmantel
- first_name: Holger
full_name: von Wenckstern, Holger
last_name: von Wenckstern
- first_name: Zhenxing
full_name: Wang, Zhenxing
last_name: Wang
- first_name: Zhipeng
full_name: Zhang, Zhipeng
last_name: Zhang
citation:
ama: 'Meister T, Ellinger F, Bartha JW, et al. Program FFlexCom — High frequency
flexible bendable electronics for wireless communication systems. In: 2017
IEEE International Conference on Microwaves, Antennas, Communications and Electronic
Systems (COMCAS). IEEE; 2018. doi:10.1109/comcas.2017.8244733'
apa: Meister, T., Ellinger, F., Bartha, J. W., Berroth, M., Burghartz, J., Claus,
M., Frey, L., Gagliardi, A., Grundmann, M., Hesselbarth, J., Klauk, H., Leo, K.,
Lugli, P., Mannsfeld, S., Manoli, Y., Negra, R., Neumaier, D., Pfeiffer, U., Riedl,
T., … Zhang, Z. (2018). Program FFlexCom — High frequency flexible bendable electronics
for wireless communication systems. 2017 IEEE International Conference on Microwaves,
Antennas, Communications and Electronic Systems (COMCAS). https://doi.org/10.1109/comcas.2017.8244733
bibtex: '@inproceedings{Meister_Ellinger_Bartha_Berroth_Burghartz_Claus_Frey_Gagliardi_Grundmann_Hesselbarth_et
al._2018, title={Program FFlexCom — High frequency flexible bendable electronics
for wireless communication systems}, DOI={10.1109/comcas.2017.8244733},
booktitle={2017 IEEE International Conference on Microwaves, Antennas, Communications
and Electronic Systems (COMCAS)}, publisher={IEEE}, author={Meister, Tilo and
Ellinger, Frank and Bartha, Johann W. and Berroth, Manfred and Burghartz, Joachim
and Claus, Martin and Frey, Lothar and Gagliardi, Alessio and Grundmann, Marius
and Hesselbarth, Jan and et al.}, year={2018} }'
chicago: Meister, Tilo, Frank Ellinger, Johann W. Bartha, Manfred Berroth, Joachim
Burghartz, Martin Claus, Lothar Frey, et al. “Program FFlexCom — High Frequency
Flexible Bendable Electronics for Wireless Communication Systems.” In 2017
IEEE International Conference on Microwaves, Antennas, Communications and Electronic
Systems (COMCAS). IEEE, 2018. https://doi.org/10.1109/comcas.2017.8244733.
ieee: 'T. Meister et al., “Program FFlexCom — High frequency flexible bendable
electronics for wireless communication systems,” 2018, doi: 10.1109/comcas.2017.8244733.'
mla: Meister, Tilo, et al. “Program FFlexCom — High Frequency Flexible Bendable
Electronics for Wireless Communication Systems.” 2017 IEEE International Conference
on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), IEEE,
2018, doi:10.1109/comcas.2017.8244733.
short: 'T. Meister, F. Ellinger, J.W. Bartha, M. Berroth, J. Burghartz, M. Claus,
L. Frey, A. Gagliardi, M. Grundmann, J. Hesselbarth, H. Klauk, K. Leo, P. Lugli,
S. Mannsfeld, Y. Manoli, R. Negra, D. Neumaier, U. Pfeiffer, T. Riedl, S. Scheinert,
U. Scherf, A. Thiede, G. Troster, M. Vossiek, R. Weigel, C. Wenger, G. Alavi,
M. Becherer, C.A. Chavarin, M. Darwish, M. Ellinger, C.-Y. Fan, M. Fritsch, F.
Grotjahn, M. Gunia, K. Haase, P. Hillger, K. Ishida, M. Jank, S. Knobelspies,
M. Kuhl, G. Lupina, S.M. Naghadeh, N. Munzenrieder, S. Ozbek, M. Rasteh, G.A.
Salvatore, D. Schrufer, C. Strobel, M. Theisen, C. Tuckmantel, H. von Wenckstern,
Z. Wang, Z. Zhang, in: 2017 IEEE International Conference on Microwaves, Antennas,
Communications and Electronic Systems (COMCAS), IEEE, 2018.'
date_created: 2023-01-24T17:24:05Z
date_updated: 2023-01-24T17:24:33Z
department:
- _id: '51'
doi: 10.1109/comcas.2017.8244733
language:
- iso: eng
publication: 2017 IEEE International Conference on Microwaves, Antennas, Communications
and Electronic Systems (COMCAS)
publication_status: published
publisher: IEEE
status: public
title: Program FFlexCom — High frequency flexible bendable electronics for wireless
communication systems
type: conference
user_id: '158'
year: '2018'
...
---
_id: '39654'
author:
- first_name: U.
full_name: Ali, U.
last_name: Ali
- first_name: M.
full_name: Bober, M.
last_name: Bober
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
citation:
ama: 'Ali U, Bober M, Thiede A. Design of voltage controlled oscillators (VCOs)
in D-band and their phase noise measurements using frequency down-conversion.
In: 2016 11th European Microwave Integrated Circuits Conference (EuMIC).
IEEE; 2016. doi:10.1109/eumic.2016.7777554'
apa: Ali, U., Bober, M., & Thiede, A. (2016). Design of voltage controlled oscillators
(VCOs) in D-band and their phase noise measurements using frequency down-conversion.
2016 11th European Microwave Integrated Circuits Conference (EuMIC). https://doi.org/10.1109/eumic.2016.7777554
bibtex: '@inproceedings{Ali_Bober_Thiede_2016, title={Design of voltage controlled
oscillators (VCOs) in D-band and their phase noise measurements using frequency
down-conversion}, DOI={10.1109/eumic.2016.7777554},
booktitle={2016 11th European Microwave Integrated Circuits Conference (EuMIC)},
publisher={IEEE}, author={Ali, U. and Bober, M. and Thiede, Andreas}, year={2016}
}'
chicago: Ali, U., M. Bober, and Andreas Thiede. “Design of Voltage Controlled Oscillators
(VCOs) in D-Band and Their Phase Noise Measurements Using Frequency down-Conversion.”
In 2016 11th European Microwave Integrated Circuits Conference (EuMIC).
IEEE, 2016. https://doi.org/10.1109/eumic.2016.7777554.
ieee: 'U. Ali, M. Bober, and A. Thiede, “Design of voltage controlled oscillators
(VCOs) in D-band and their phase noise measurements using frequency down-conversion,”
2016, doi: 10.1109/eumic.2016.7777554.'
mla: Ali, U., et al. “Design of Voltage Controlled Oscillators (VCOs) in D-Band
and Their Phase Noise Measurements Using Frequency down-Conversion.” 2016 11th
European Microwave Integrated Circuits Conference (EuMIC), IEEE, 2016, doi:10.1109/eumic.2016.7777554.
short: 'U. Ali, M. Bober, A. Thiede, in: 2016 11th European Microwave Integrated
Circuits Conference (EuMIC), IEEE, 2016.'
date_created: 2023-01-24T17:26:23Z
date_updated: 2023-01-24T17:27:19Z
department:
- _id: '51'
doi: 10.1109/eumic.2016.7777554
language:
- iso: eng
publication: 2016 11th European Microwave Integrated Circuits Conference (EuMIC)
publication_status: published
publisher: IEEE
status: public
title: Design of voltage controlled oscillators (VCOs) in D-band and their phase noise
measurements using frequency down-conversion
type: conference
user_id: '158'
year: '2016'
...
---
_id: '41915'
author:
- first_name: U.
full_name: Ali, U.
last_name: Ali
- first_name: M.
full_name: Bober, M.
last_name: Bober
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
citation:
ama: 'Ali U, Bober M, Thiede A. An integrated 118.4 to122 GHz low noise phase-locked
loop (PLL) in 0.13 µm SiGe BiCMOS technology. In: 2016 German Microwave Conference
(GeMiC). IEEE; 2016. doi:10.1109/gemic.2016.7461611'
apa: Ali, U., Bober, M., & Thiede, A. (2016). An integrated 118.4 to122 GHz
low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology. 2016 German
Microwave Conference (GeMiC). https://doi.org/10.1109/gemic.2016.7461611
bibtex: '@inproceedings{Ali_Bober_Thiede_2016, title={An integrated 118.4 to122
GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology}, DOI={10.1109/gemic.2016.7461611},
booktitle={2016 German Microwave Conference (GeMiC)}, publisher={IEEE}, author={Ali,
U. and Bober, M. and Thiede, Andreas}, year={2016} }'
chicago: Ali, U., M. Bober, and Andreas Thiede. “An Integrated 118.4 To122 GHz Low
Noise Phase-Locked Loop (PLL) in 0.13 Μm SiGe BiCMOS Technology.” In 2016 German
Microwave Conference (GeMiC). IEEE, 2016. https://doi.org/10.1109/gemic.2016.7461611.
ieee: 'U. Ali, M. Bober, and A. Thiede, “An integrated 118.4 to122 GHz low noise
phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology,” 2016, doi: 10.1109/gemic.2016.7461611.'
mla: Ali, U., et al. “An Integrated 118.4 To122 GHz Low Noise Phase-Locked Loop
(PLL) in 0.13 Μm SiGe BiCMOS Technology.” 2016 German Microwave Conference
(GeMiC), IEEE, 2016, doi:10.1109/gemic.2016.7461611.
short: 'U. Ali, M. Bober, A. Thiede, in: 2016 German Microwave Conference (GeMiC),
IEEE, 2016.'
date_created: 2023-02-08T13:19:15Z
date_updated: 2023-02-08T13:19:37Z
department:
- _id: '51'
doi: 10.1109/gemic.2016.7461611
language:
- iso: eng
publication: 2016 German Microwave Conference (GeMiC)
publication_status: published
publisher: IEEE
status: public
title: An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm
SiGe BiCMOS technology
type: conference
user_id: '77496'
year: '2016'
...
---
_id: '41866'
author:
- first_name: Johannes A.
full_name: Russer, Johannes A.
last_name: Russer
- first_name: Nasir
full_name: Uddin, Nasir
last_name: Uddin
- first_name: Ahmed Sanaa
full_name: Awny, Ahmed Sanaa
last_name: Awny
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
- first_name: Peter
full_name: Russer, Peter
last_name: Russer
citation:
ama: Russer JA, Uddin N, Awny AS, Thiede A, Russer P. Near-field measurement of
stochastic electromagnetic fields. IEEE Electromagnetic Compatibility Magazine.
2015;4(3):79-85. doi:10.1109/memc.2015.7336761
apa: Russer, J. A., Uddin, N., Awny, A. S., Thiede, A., & Russer, P. (2015).
Near-field measurement of stochastic electromagnetic fields. IEEE Electromagnetic
Compatibility Magazine, 4(3), 79–85. https://doi.org/10.1109/memc.2015.7336761
bibtex: '@article{Russer_Uddin_Awny_Thiede_Russer_2015, title={Near-field measurement
of stochastic electromagnetic fields}, volume={4}, DOI={10.1109/memc.2015.7336761},
number={3}, journal={IEEE Electromagnetic Compatibility Magazine}, publisher={Institute
of Electrical and Electronics Engineers (IEEE)}, author={Russer, Johannes A. and
Uddin, Nasir and Awny, Ahmed Sanaa and Thiede, Andreas and Russer, Peter}, year={2015},
pages={79–85} }'
chicago: 'Russer, Johannes A., Nasir Uddin, Ahmed Sanaa Awny, Andreas Thiede, and
Peter Russer. “Near-Field Measurement of Stochastic Electromagnetic Fields.” IEEE
Electromagnetic Compatibility Magazine 4, no. 3 (2015): 79–85. https://doi.org/10.1109/memc.2015.7336761.'
ieee: 'J. A. Russer, N. Uddin, A. S. Awny, A. Thiede, and P. Russer, “Near-field
measurement of stochastic electromagnetic fields,” IEEE Electromagnetic Compatibility
Magazine, vol. 4, no. 3, pp. 79–85, 2015, doi: 10.1109/memc.2015.7336761.'
mla: Russer, Johannes A., et al. “Near-Field Measurement of Stochastic Electromagnetic
Fields.” IEEE Electromagnetic Compatibility Magazine, vol. 4, no. 3, Institute
of Electrical and Electronics Engineers (IEEE), 2015, pp. 79–85, doi:10.1109/memc.2015.7336761.
short: J.A. Russer, N. Uddin, A.S. Awny, A. Thiede, P. Russer, IEEE Electromagnetic
Compatibility Magazine 4 (2015) 79–85.
date_created: 2023-02-07T10:59:53Z
date_updated: 2023-02-07T11:00:56Z
department:
- _id: '51'
doi: 10.1109/memc.2015.7336761
intvolume: ' 4'
issue: '3'
keyword:
- Electrical and Electronic Engineering
- Computer Networks and Communications
- Instrumentation
- Signal Processing
- Software
language:
- iso: eng
page: 79-85
publication: IEEE Electromagnetic Compatibility Magazine
publication_identifier:
issn:
- 2162-2264
- 2162-2272
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Near-field measurement of stochastic electromagnetic fields
type: journal_article
user_id: '77496'
volume: 4
year: '2015'
...
---
_id: '41918'
author:
- first_name: U.
full_name: Ali, U.
last_name: Ali
- first_name: M.
full_name: Bober, M.
last_name: Bober
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
- first_name: A.
full_name: Awny, A.
last_name: Awny
- first_name: G.
full_name: Fischer, G.
last_name: Fischer
citation:
ama: 'Ali U, Bober M, Thiede A, Awny A, Fischer G. High speed static frequency divider
design with 111.6 GHz self-oscillation frequency (SOF) in 0.13 µm
SiGe BiCMOS technology. In: 2015 German Microwave Conference. IEEE; 2015.
doi:10.1109/gemic.2015.7107798'
apa: Ali, U., Bober, M., Thiede, A., Awny, A., & Fischer, G. (2015). High speed
static frequency divider design with 111.6 GHz self-oscillation frequency (SOF)
in 0.13 µm SiGe BiCMOS technology. 2015 German Microwave Conference.
https://doi.org/10.1109/gemic.2015.7107798
bibtex: '@inproceedings{Ali_Bober_Thiede_Awny_Fischer_2015, title={High speed static
frequency divider design with 111.6 GHz self-oscillation frequency (SOF) in 0.13
µm SiGe BiCMOS technology}, DOI={10.1109/gemic.2015.7107798},
booktitle={2015 German Microwave Conference}, publisher={IEEE}, author={Ali, U.
and Bober, M. and Thiede, Andreas and Awny, A. and Fischer, G.}, year={2015} }'
chicago: Ali, U., M. Bober, Andreas Thiede, A. Awny, and G. Fischer. “High Speed
Static Frequency Divider Design with 111.6 GHz Self-Oscillation Frequency (SOF)
in 0.13 µm SiGe BiCMOS Technology.” In 2015 German Microwave
Conference. IEEE, 2015. https://doi.org/10.1109/gemic.2015.7107798.
ieee: 'U. Ali, M. Bober, A. Thiede, A. Awny, and G. Fischer, “High speed static
frequency divider design with 111.6 GHz self-oscillation frequency (SOF) in 0.13
µm SiGe BiCMOS technology,” 2015, doi: 10.1109/gemic.2015.7107798.'
mla: Ali, U., et al. “High Speed Static Frequency Divider Design with 111.6 GHz
Self-Oscillation Frequency (SOF) in 0.13 µm SiGe BiCMOS Technology.”
2015 German Microwave Conference, IEEE, 2015, doi:10.1109/gemic.2015.7107798.
short: 'U. Ali, M. Bober, A. Thiede, A. Awny, G. Fischer, in: 2015 German Microwave
Conference, IEEE, 2015.'
date_created: 2023-02-08T13:23:16Z
date_updated: 2023-02-08T13:23:28Z
department:
- _id: '51'
doi: 10.1109/gemic.2015.7107798
language:
- iso: eng
publication: 2015 German Microwave Conference
publication_status: published
publisher: IEEE
status: public
title: High speed static frequency divider design with 111.6 GHz self-oscillation
frequency (SOF) in 0.13 µm SiGe BiCMOS technology
type: conference
user_id: '77496'
year: '2015'
...
---
_id: '41917'
author:
- first_name: U.
full_name: Ali, U.
last_name: Ali
- first_name: G.
full_name: Fischer, G.
last_name: Fischer
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
citation:
ama: 'Ali U, Fischer G, Thiede A. Low power fundamental VCO design in D-band using
0.13 µm SiGe BiCMOS technology. In: 2015 German Microwave Conference.
IEEE; 2015. doi:10.1109/gemic.2015.7107827'
apa: Ali, U., Fischer, G., & Thiede, A. (2015). Low power fundamental VCO design
in D-band using 0.13 µm SiGe BiCMOS technology. 2015 German
Microwave Conference. https://doi.org/10.1109/gemic.2015.7107827
bibtex: '@inproceedings{Ali_Fischer_Thiede_2015, title={Low power fundamental VCO
design in D-band using 0.13 µm SiGe BiCMOS technology}, DOI={10.1109/gemic.2015.7107827},
booktitle={2015 German Microwave Conference}, publisher={IEEE}, author={Ali, U.
and Fischer, G. and Thiede, Andreas}, year={2015} }'
chicago: Ali, U., G. Fischer, and Andreas Thiede. “Low Power Fundamental VCO Design
in D-Band Using 0.13 µm SiGe BiCMOS Technology.” In 2015 German
Microwave Conference. IEEE, 2015. https://doi.org/10.1109/gemic.2015.7107827.
ieee: 'U. Ali, G. Fischer, and A. Thiede, “Low power fundamental VCO design in D-band
using 0.13 µm SiGe BiCMOS technology,” 2015, doi: 10.1109/gemic.2015.7107827.'
mla: Ali, U., et al. “Low Power Fundamental VCO Design in D-Band Using 0.13 µm
SiGe BiCMOS Technology.” 2015 German Microwave Conference, IEEE, 2015,
doi:10.1109/gemic.2015.7107827.
short: 'U. Ali, G. Fischer, A. Thiede, in: 2015 German Microwave Conference, IEEE,
2015.'
date_created: 2023-02-08T13:21:52Z
date_updated: 2023-02-08T13:22:09Z
department:
- _id: '51'
doi: 10.1109/gemic.2015.7107827
language:
- iso: eng
publication: 2015 German Microwave Conference
publication_status: published
publisher: IEEE
status: public
title: Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS
technology
type: conference
user_id: '77496'
year: '2015'
...
---
_id: '24310'
abstract:
- lang: eng
text: A millimeter wave frequency mixed-signal design of a 1-tap half-rate look-ahead
decision feedback equalizer for 80 Gb/s short-reach optical communication systems
is presented. On-wafer tests are developed to determine the maximum operating
bit rate of the equalizer. Results are also presented for intersymbol interference
mitigation at 80 Gb/s for a 20 GHz bandwidth-limited channel. Further improvements
on the architecture of the 80 Gb/s equalizer are discussed and used in the design
and on-wafer measurement of a 110 Gb/s equalizer. The equalizers are designed
in a 0.13 μm SiGe:C BiCMOS technology. The 80 and 110 Gb/s versions dissipate
4 and 5.75 W, respectively and occupy 2 and 2.56 mm 2 , respectively.
author:
- first_name: Ahmed
full_name: Awny, Ahmed
last_name: Awny
- first_name: Lothar
full_name: Möller, Lothar
last_name: Möller
- first_name: Josef
full_name: Junio, Josef
last_name: Junio
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
orcid: https://orcid.org/0000-0002-5950-6618
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
citation:
ama: Awny A, Möller L, Junio J, Scheytt C, Thiede A. Design and Measurement Techniques
for an 80 Gb/s 1-Tap Decision Feedback Equalizer. IEEE JOURNAL OF SOLID-STATE
CIRCUITS. 2014;Vol.49(No.2):452-470. doi:10.1109/JSSC.2013.2285385
apa: Awny, A., Möller, L., Junio, J., Scheytt, C., & Thiede, A. (2014). Design
and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer. IEEE
JOURNAL OF SOLID-STATE CIRCUITS, Vol.49(No.2), 452–470. https://doi.org/10.1109/JSSC.2013.2285385
bibtex: '@article{Awny_Möller_Junio_Scheytt_Thiede_2014, title={Design and Measurement
Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer}, volume={Vol.49},
DOI={10.1109/JSSC.2013.2285385},
number={No.2}, journal={IEEE JOURNAL OF SOLID-STATE CIRCUITS}, author={Awny, Ahmed
and Möller, Lothar and Junio, Josef and Scheytt, Christoph and Thiede, Andreas},
year={2014}, pages={452–470} }'
chicago: 'Awny, Ahmed, Lothar Möller, Josef Junio, Christoph Scheytt, and Andreas
Thiede. “Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback
Equalizer.” IEEE JOURNAL OF SOLID-STATE CIRCUITS Vol.49, no. No.2 (2014):
452–70. https://doi.org/10.1109/JSSC.2013.2285385.'
ieee: 'A. Awny, L. Möller, J. Junio, C. Scheytt, and A. Thiede, “Design and Measurement
Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer,” IEEE JOURNAL
OF SOLID-STATE CIRCUITS, vol. Vol.49, no. No.2, pp. 452–470, 2014, doi: 10.1109/JSSC.2013.2285385.'
mla: Awny, Ahmed, et al. “Design and Measurement Techniques for an 80 Gb/s 1-Tap
Decision Feedback Equalizer.” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol.
Vol.49, no. No.2, 2014, pp. 452–70, doi:10.1109/JSSC.2013.2285385.
short: A. Awny, L. Möller, J. Junio, C. Scheytt, A. Thiede, IEEE JOURNAL OF SOLID-STATE
CIRCUITS Vol.49 (2014) 452–470.
date_created: 2021-09-14T07:06:58Z
date_updated: 2023-01-25T11:03:36Z
department:
- _id: '58'
- _id: '51'
doi: 10.1109/JSSC.2013.2285385
issue: No.2
language:
- iso: eng
page: 452-470
publication: IEEE JOURNAL OF SOLID-STATE CIRCUITS
publication_identifier:
eissn:
- 1558-173X
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6648461
status: public
title: Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer
type: journal_article
user_id: '158'
volume: Vol.49
year: '2014'
...
---
_id: '24351'
abstract:
- lang: eng
text: We demonstrate the first 80 Gb/s decision feedback equalizer in various electrical
and optical applications. The device, designed in SiGe:C BiCMOS 0.13 μm technology,
enables error-free data recovery of heavily distorted signals transmitted at a
bandwidth less than 30% of their bit rate. The fastest nonlinear electrical equalizer
reported yet utilizes a novel 1-tap look-ahead architecture.
author:
- first_name: Lothar
full_name: Möller, Lothar
last_name: Möller
- first_name: Ahmed
full_name: Awny, Ahmed
last_name: Awny
- first_name: Josef
full_name: Junio, Josef
last_name: Junio
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
orcid: https://orcid.org/0000-0002-5950-6618
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
citation:
ama: 'Möller L, Awny A, Junio J, Scheytt C, Thiede A. 80 Gb/s Decision Feedback
Equalizer for Intersymbol Interference. In: Optical Fiber Communication Conference.
; 2013. doi:10.1364/OFC.2013.OW4B.2
'
apa: Möller, L., Awny, A., Junio, J., Scheytt, C., & Thiede, A. (2013). 80 Gb/s
Decision Feedback Equalizer for Intersymbol Interference. Optical Fiber Communication
Conference. https://doi.org/10.1364/OFC.2013.OW4B.2
bibtex: '@inproceedings{Möller_Awny_Junio_Scheytt_Thiede_2013, place={Anaheim, California
United States}, title={80 Gb/s Decision Feedback Equalizer for Intersymbol Interference},
DOI={10.1364/OFC.2013.OW4B.2
}, booktitle={Optical Fiber Communication Conference}, author={Möller, Lothar
and Awny, Ahmed and Junio, Josef and Scheytt, Christoph and Thiede, Andreas},
year={2013} }'
chicago: Möller, Lothar, Ahmed Awny, Josef Junio, Christoph Scheytt, and Andreas
Thiede. “80 Gb/s Decision Feedback Equalizer for Intersymbol Interference.” In
Optical Fiber Communication Conference. Anaheim, California United States,
2013. https://doi.org/10.1364/OFC.2013.OW4B.2
.
ieee: 'L. Möller, A. Awny, J. Junio, C. Scheytt, and A. Thiede, “80 Gb/s Decision
Feedback Equalizer for Intersymbol Interference,” 2013, doi: 10.1364/OFC.2013.OW4B.2 .'
mla: Möller, Lothar, et al. “80 Gb/s Decision Feedback Equalizer for Intersymbol
Interference.” Optical Fiber Communication Conference, 2013, doi:10.1364/OFC.2013.OW4B.2 .
short: 'L. Möller, A. Awny, J. Junio, C. Scheytt, A. Thiede, in: Optical Fiber Communication
Conference, Anaheim, California United States, 2013.'
date_created: 2021-09-14T09:22:28Z
date_updated: 2023-01-25T11:03:26Z
department:
- _id: '58'
- _id: '51'
doi: '10.1364/OFC.2013.OW4B.2 '
language:
- iso: eng
place: Anaheim, California United States
publication: Optical Fiber Communication Conference
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6533180
status: public
title: 80 Gb/s Decision Feedback Equalizer for Intersymbol Interference
type: conference
user_id: '158'
year: '2013'
...
---
_id: '41919'
author:
- first_name: U.
full_name: Ali, U.
last_name: Ali
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
citation:
ama: 'Ali U, Thiede A. A millimeter wave quad-phase ring oscillator using 0.13 µm
SiGe BiCMOS HBT technology. In: 2013 International Semiconductor Conference
Dresden - Grenoble (ISCDG). IEEE; 2013. doi:10.1109/iscdg.2013.6656297'
apa: Ali, U., & Thiede, A. (2013). A millimeter wave quad-phase ring oscillator
using 0.13 µm SiGe BiCMOS HBT technology. 2013 International
Semiconductor Conference Dresden - Grenoble (ISCDG). https://doi.org/10.1109/iscdg.2013.6656297
bibtex: '@inproceedings{Ali_Thiede_2013, title={A millimeter wave quad-phase ring
oscillator using 0.13 µm SiGe BiCMOS HBT technology}, DOI={10.1109/iscdg.2013.6656297},
booktitle={2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)},
publisher={IEEE}, author={Ali, U. and Thiede, Andreas}, year={2013} }'
chicago: Ali, U., and Andreas Thiede. “A Millimeter Wave Quad-Phase Ring Oscillator
Using 0.13 µm SiGe BiCMOS HBT Technology.” In 2013 International
Semiconductor Conference Dresden - Grenoble (ISCDG). IEEE, 2013. https://doi.org/10.1109/iscdg.2013.6656297.
ieee: 'U. Ali and A. Thiede, “A millimeter wave quad-phase ring oscillator using
0.13 µm SiGe BiCMOS HBT technology,” 2013, doi: 10.1109/iscdg.2013.6656297.'
mla: Ali, U., and Andreas Thiede. “A Millimeter Wave Quad-Phase Ring Oscillator
Using 0.13 µm SiGe BiCMOS HBT Technology.” 2013 International
Semiconductor Conference Dresden - Grenoble (ISCDG), IEEE, 2013, doi:10.1109/iscdg.2013.6656297.
short: 'U. Ali, A. Thiede, in: 2013 International Semiconductor Conference Dresden
- Grenoble (ISCDG), IEEE, 2013.'
date_created: 2023-02-08T13:24:46Z
date_updated: 2023-02-08T13:24:57Z
department:
- _id: '51'
doi: 10.1109/iscdg.2013.6656297
language:
- iso: eng
publication: 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
publication_status: published
publisher: IEEE
status: public
title: A millimeter wave quad-phase ring oscillator using 0.13 µm SiGe
BiCMOS HBT technology
type: conference
user_id: '77496'
year: '2013'
...